Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
01/2012
01/24/2012US8102706 Programming a memory with varying bits per cell
01/24/2012US8102705 Structure and method for shuffling data within non-volatile memory devices
01/24/2012US8102704 Method of preventing coupling noises for a non-volatile semiconductor memory device
01/24/2012US8102699 Phase change memory device
01/19/2012WO2012009313A2 3 transistor (n/p/n) non-volatile memory cell without program disturb
01/19/2012WO2012009266A1 Fast random access to non-volatile storage
01/19/2012WO2011113034A3 Ldpc erasure decoding for flash memories
01/19/2012US20120017038 Non-Volatile Memory And Method With Control Data Management
01/19/2012US20120014187 Non-volatile memory device and method of operation therefor
01/19/2012US20120014186 Fast Random Access To Non-Volatile Storage
01/19/2012US20120014185 Circuits, systems and methods for driving high and low voltages on bit lines in non-volatile memory
01/19/2012US20120014184 Programming non-volatile memory with bit line voltage step up
01/19/2012US20120014183 3 transistor (n/p/n) non-volatile memory cell without program disturb
01/19/2012US20120014182 Apparatus for generating a voltage and non-volatile memory device having the same
01/19/2012US20120014181 Nonvolatile Semiconductor Memory
01/19/2012US20120014179 Soft program of a non-volatile memory block
01/19/2012DE112009002444T5 A composite memory having a bridging device for connecting discrete memory devices to a system A composite memory having a bridging device for connecting discrete memory devices to a system
01/19/2012DE102010008632A1 Electronic storage medium e.g. a universal serial bus stick useful as a data carrier, comprises a surface made of elastic material and provided with an opening, and U-shaped or V-shaped running wire or a small plate
01/18/2012EP2407976A2 Non-volatile re-programmable memory device
01/18/2012CN1945836B Bidirectional split gate nand flash memory structure/array, programming, erasing reading and manufacturing
01/18/2012CN1909112B Boosted circuit and semiconductor device with same
01/18/2012CN1898749B Memory device, memory circuit and semiconductor integrated circuit having variable resistance
01/18/2012CN102326206A Memory reading method taking care of resistance drift effects
01/18/2012CN102324429A Novel SONOS (Silicon Oxide Nitride Oxide Semiconductor) flash memory unit structure of double transistor and operation method thereof
01/18/2012CN102324251A Signal line to indicate program-fail in memory
01/18/2012CN101727416B Multichip parallel program burning system
01/18/2012CN101388248B Flash memory device and method of operating the same
01/18/2012CN101088126B Sense amplifiers with high voltage swing
01/17/2012US8099544 Information processing apparatus and nonvolatile semiconductor memory drive
01/17/2012US8098530 Systems and methods for erasing a memory
01/17/2012US8098526 Reverse reading in non-volatile memory with compensation for coupling
01/17/2012US8098525 Pre-charge sensing scheme for non-volatile memory (NVM)
01/17/2012US8098524 Semiconductor memory device capable of increasing writing speed
01/17/2012US8098523 Semiconductor memory device with memory cell having charge accumulation layer and control gate and memory system
01/12/2012US20120011307 Semiconductor storage device
01/12/2012US20120008419 Semiconductor memory device and method of operating the same
01/12/2012US20120008418 Semiconductor memory device
01/12/2012US20120008417 Nonvolatile memory and operation method of the same
01/12/2012US20120008416 Semiconductor memory device and method of operating the same
01/12/2012US20120008415 Semiconductor memory device and method of erasing the same
01/12/2012US20120008414 Systems and methods for storing, retrieving, and adjusting read thresholds in flash memory storage system
01/12/2012US20120008413 Method for operating semiconductor memory device
01/12/2012US20120008412 Nonvolatile memory device and method of erasing the same
01/12/2012US20120008411 Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
01/12/2012US20120008410 Detection of Word-Line Leakage in Memory Arrays: Current Based Approach
01/12/2012US20120008409 Reduction of quick charge loss effect in a memory device
01/12/2012US20120008408 Non-volatile memory device and operating method of the same
01/12/2012US20120008407 Semiconductor memory device and method of programming the same
01/12/2012US20120008406 Nonvolatile memory device and method of operating the same
01/12/2012US20120008405 Detection of Broken Word-Lines in Memory Arrays
01/12/2012US20120008404 System and method for reducing pin-count of memory devices, and memory device testers for same
01/12/2012US20120008403 Semiconductor integrated circuit
01/12/2012US20120008402 Semiconductor memory device and method of operating the same
01/12/2012US20120008401 Systems and methods for storing, retrieving, and adjusting read thresholds in flash memory storage system
01/12/2012US20120008400 Non-volatile semiconductor storage device and method of manufacturing the same
01/12/2012US20120008399 Methods of operating memories including characterizing memory cell signal lines
01/12/2012US20120008398 Nonvolatile memory device
01/12/2012US20120008397 Memory system and method of operating the same
01/12/2012US20120008396 Semiconductor memory device and method of erasing the same
01/12/2012US20120008395 Nonvolatile Memory Device and Method of Operating the Same
01/12/2012US20120008394 Nonvolatile memory system and refresh method
01/12/2012US20120008393 Nonvolatile memory device and operation method thereof
01/12/2012US20120008392 Nonvolatile memory device and method for operating the same
01/12/2012US20120008391 Voltage switch circuit and nonvolatile memory device using the same
01/12/2012US20120008390 Semiconductor memory device and method of operating the same
01/12/2012US20120008389 Nonvolatile memory devices, memory systems and methods of performing read operations
01/12/2012US20120008388 Non-volatile memory and operation method thereof
01/12/2012US20120008387 Method of twice programming a non-volatile flash memory with a sequence
01/12/2012US20120008386 Determining Optimal Reference Voltages For Progressive Reads In Flash Memory Systems
01/12/2012US20120008385 Semiconductor memory device and method of operating the same
01/12/2012US20120008384 Detection of Word-Line Leakage in Memory Arrays
01/12/2012DE112008000968T5 Nicht-flüchtiger Speicher mit erweitertem Betriebstemperaturbereich Non-volatile memory with extended operating temperature range
01/11/2012EP2405442A1 Chip card with two storage devices
01/11/2012EP2404299A1 Nand flash architecture with multi-level row decoding
01/11/2012CN1959846B Random access memory, boosting charge pump and method of generating write driving voltage
01/11/2012CN1945741B Semiconductor memory device and transmission/reception system provided with the same
01/11/2012CN1906756B Pillar cell flash memory technology
01/11/2012CN1832038B Flash memory device with improved pre-program function and method for controlling pre-program operation therein
01/11/2012CN1822227B Multi-level cell memory device and associated read method
01/11/2012CN102318009A Memory device
01/11/2012CN102318007A Nonvolatile memory and method for on-chip pseudo-randomization of data within a page and between pages
01/11/2012CN102314949A Data reading method, control circuit and memory controller
01/11/2012CN102314948A Nonvolatile memory device and method for operating the same
01/11/2012CN102314947A Method of twice programming a non-volatile flash memory with a sequence
01/11/2012CN102314946A Voltage switch circuit and nonvolatile memory device using the same
01/11/2012CN102314945A Nonvolatile memory apparatus and method for processing configuration information thereof
01/11/2012CN102314944A Method for operating semiconductor memory device
01/11/2012CN102314943A Nonvolatile memory and manufacturing method thereof
01/11/2012CN102314942A Nonvolatile memory and operation method thereof
01/11/2012CN102314941A Nonvolatile memory devices, memory systems and methods of performing read operations
01/11/2012CN102314940A Nonvolatile memory device with transistor connected in parallel with resistance value switching device
01/11/2012CN102314036A Anti-ultraviolet electronic device and preparation method thereof
01/11/2012CN101385087B SONOS memory device with reduced short-channel effects
01/11/2012CN101361135B Single level cell programming in a multiple level cell non-volatile memory device
01/11/2012CN101295542B Control circuit of flash memory device and method of operating the flash memory device
01/11/2012CN101278356B Method of block-writing to a memory element
01/11/2012CN101095199B Non-volatile memory system and method for programming non-volatile memory
01/11/2012CN101071641B Non-volatile memory device and method of operation therefor
01/10/2012US8095834 Macro and command execution from memory array
01/10/2012US8094503 Method of programming an array of NMOS EEPROM cells that minimizes bit disturbances and voltage withstand requirements for the memory array and supporting circuits
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