Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
03/2012
03/14/2012CN102376356A Method and apparatus for word line driver with decreased gate resistance
03/14/2012CN101792435B Photochromic thiophene indole combined type asymmetric perfluoro cyclopentene compound as well as synthesizing method and application thereof
03/14/2012CN101004948B Nonvolatile memory device and system , and related method
03/13/2012US8134881 Thermally stable reference voltage generator for MRAM
03/13/2012US8134873 Flash memory device and programming/erasing method of the same
03/13/2012US8134871 Programming memory with reduced pass voltage disturb and floating gate-to-control gate leakage
03/13/2012US8134869 Semiconductor memory having electrically erasable and programmable semiconductor memory cells
03/08/2012WO2012030388A2 Stripe-based non-volatile multilevel memory operation
03/08/2012US20120057410 Method and Apparatus for the Erase Suspend Operation
03/08/2012US20120057409 Nonvolatile memory device and method of reading the same
03/08/2012US20120057408 Analog read and write paths in a solid state memory device
03/08/2012US20120057407 Caching scheme synergy for extent migration between tiers of a storage system and methods thereof
03/08/2012US20120057406 Flash memory apparatus
03/08/2012US20120057405 Semiconductor memory device
03/08/2012US20120057404 Memory device and method having charge level assignments selected to minimize signal coupling
03/08/2012DE102010053557A1 NAND-Programmiertechnik NAND programming technique
03/07/2012EP2426668A1 Flash multi-level threshold distribution scheme
03/07/2012EP1468422B1 Pcram rewrite prevention
03/07/2012CN202159492U 一种用于tsop48的nor flash抄写的烧录座 Burn seat for tsop48 of nor flash scribal
03/07/2012CN102369579A Temperature alert and low rate refresh for a non-volatile memory
03/07/2012CN102368536A Resistive random access memory (RRAM) unit
03/07/2012CN101447227B Flash memory device and programming method thereof
03/06/2012US8130589 Semiconductor memory device using only single-channel transistor to apply voltage to selected word line
03/06/2012US8130555 Nonvolatile semiconductor storage device and method of erase verifying the same
03/06/2012US8130554 Securely erasing flash-based memory
03/06/2012US8130553 Systems and methods for low wear operation of solid state memory
03/06/2012US8130552 Multi-pass programming for memory with reduced data storage requirement
03/06/2012US8130551 Extra dummy erase pulses after shallow erase-verify to avoid sensing deep erased threshold voltage
03/06/2012US8130546 Semiconductor memory device and manufacturing method of semiconductor memory device
03/06/2012US8130545 Nonvolatile semiconductor storage device
03/06/2012US8130543 Method and apparatus for increasing memory programming efficiency through dynamic switching of sense amplifiers
03/06/2012US8130542 Reading non-volatile multilevel memory cells
03/06/2012US8129774 EEPROM with increased reading speed
03/01/2012WO2012003224A3 Memories and their formation
03/01/2012WO2011109599A3 A high-voltage switching circuit
03/01/2012US20120054414 Solid state drive and data control method thereof
03/01/2012US20120051147 Area saving electrically-erasable-programmable read-only memory (eeprom) array
03/01/2012US20120051146 Semiconductor memory device capable of memorizing multivalued data
03/01/2012US20120051145 Semiconductor memory device and method of operating the same
03/01/2012US20120051144 System and method for accelerated sampling
03/01/2012US20120051143 Nonvolatile memory device, operating method thereof and memory system including the same
03/01/2012US20120051142 Soft Program Method and Computer Redable Medium Thereof
03/01/2012US20120051141 Multi-bit flash memory devices and methods of programming and erasing the same
03/01/2012US20120051140 RAM memory device with NAND type interface
03/01/2012US20120051139 Reducing read failure in a memory device
03/01/2012US20120051138 Nonvolatile memory device, operating method thereof and memory system including the same
03/01/2012US20120051137 Memory Architecture of 3D Array With Diode In Memory String
03/01/2012US20120051136 Nonvolatile memory device, operating method thereof and memory system including the same
03/01/2012US20120051135 Flash memory device and operating method thereof
03/01/2012US20120051134 Nonvolatile semiconductor memory device and method testing the same
03/01/2012US20120051133 Nonvolatile semiconductor storage device
03/01/2012US20120051131 Efficient method of replicate memory data with virtual port solution
03/01/2012US20120051130 System and method for detecting disturbed memory cells of a semiconductor memory device
03/01/2012US20120051129 Memory device having three-dimensional gate structure
02/2012
02/29/2012CN1853239B Detecting over programmed memory
02/29/2012CN1781157B Non-volatile memory having a bias on the source electrode for HCI programming and its programming method
02/29/2012CN102364577A Method for destroying data of magnetic medium and demagnetization magnetic field generation circuit
02/29/2012CN101661796B Nonvolatile storage and data protection method thereof
02/29/2012CN101436430B Semiconductor integrated circuit device
02/29/2012CN101405814B Verify operation for non-volatile storage using different voltages
02/29/2012CN101405813B Method for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages
02/29/2012CN101354923B Voltage converter circuit and flash memory device having the same
02/29/2012CN101320594B Physical operation method of flash memory chip
02/29/2012CN101208752B Nonvolatile memory cell comprising a diode and a resistance-switching material
02/29/2012CN101199025B Selective slow programming convergence in a flash memory device
02/29/2012CN101089995B Memory and control device
02/28/2012US8127368 Semiconductor memory card and data reading apparatus, and data reading/reproducing apparatus
02/28/2012US8127073 Memory system, multi-bit flash memory device, and associated methods
02/28/2012US8125836 Verifying an erase threshold in a memory device
02/28/2012US8125835 Memory architecture having two independently controlled voltage pumps
02/28/2012US8125834 Device and method for controlling solid-state memory system
02/28/2012US8125833 Adaptive dynamic reading of flash memories
02/28/2012US8125831 Sensing against a reference cell
02/28/2012US8125829 Biasing system and method
02/28/2012US8125828 Page buffer circuit with reduced size and methods for reading and programming data with the same
02/28/2012US8125826 Fractional bits in memory cells
02/28/2012US8125825 Memory system protected from errors due to read disturbance and reading method thereof
02/28/2012US8125039 One-time programmable, non-volatile field effect devices and methods of making same
02/23/2012WO2012024079A2 Variable resistance memory array architecture
02/23/2012WO2011153000A3 Advanced bitwise operations and apparatus in a multi-level system with nonvolatile memory
02/23/2012WO2011146685A3 Persistent moving read reference
02/23/2012US20120044772 Non-volatile memory device, system, and cell array
02/23/2012US20120044771 Method of programming non-volatile memory device and apparatuses for performing the method
02/23/2012US20120044770 NAND based NMOS NOR flash memory cell, a NAND based NMOS NOR flash memory array, and a method of forming a NAND based NMOS flash memory array
02/23/2012US20120044769 Multi-pass programming in a memory device
02/23/2012US20120044768 Programming to mitigate memory cell performance differences
02/23/2012US20120044766 Semiconductor memory device with a stacked gate including a charge storage layer and a control gate and method of controlling the same
02/23/2012US20120044765 Word line activation in memory devices
02/23/2012US20120044764 Nonvolatile semiconductor memory device which performs improved erase operation
02/23/2012US20120044763 Non-Volatile Memory and Semiconductor Device
02/23/2012US20120044762 Rejuvenation of analog memory cells
02/23/2012US20120044761 Nonvolatile memory device and method of programming the same
02/23/2012DE10361719B4 Drain-Pumpe für Flash-Speicher Drain pump for flash memory
02/22/2012EP2421027A2 Memory device comprising a polycrystalline-silicon floating gate having impurities therein and manufacturing method thereof
02/22/2012EP2088512B1 Memory system
02/22/2012CN202150274U Anti-lost circuit structure for EEPROM (Electrically Erasable Programmable Read Only Memory) data
02/22/2012CN202150273U 多功能存储介质信息消除系统 Multifunctional storage media information Elimination System
02/22/2012CN102362263A SSD controller, and method for operating an SSD controller
02/22/2012CN102360569A Burning method, system and apparatus for nand flash chips
02/22/2012CN102360568A Parallel asynchronous memory and data reading method thereof
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