Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
02/2012
02/22/2012CN102360317A Method to separate and persist static and dynamic portions of a control application
02/22/2012CN101562044B 存储单元的编程方法 The method of programming the memory cell
02/22/2012CN101454840B 半导体器件 Semiconductor devices
02/22/2012CN101447231B 用于执行非易失性存储器件中的擦除操作的方法 The method of the nonvolatile memory device to perform the erase operation for
02/22/2012CN101364440B 块解码器及包括块解码器的半导体存储器件 Block decoder, and a semiconductor memory device comprises a block decoder
02/22/2012CN101322195B 具有存储矩阵的电子电路 An electronic circuit having a memory matrix
02/22/2012CN101013601B 用于控制非易失性存储器检测时间的方法及装置 Method for controlling a nonvolatile memory, and means for detecting time
02/21/2012US8120969 Semi-volatile NAND flash memory
02/21/2012US8120968 High voltage word line driver
02/21/2012US8120967 Semiconductor memory device and related method of programming
02/21/2012US8120965 Data storage device and data read method
02/21/2012US8120964 Nonvolatile memory device and method of operating the same
02/21/2012US8120960 Method and apparatus for accessing a non-volatile memory array comprising unidirectional current flowing multiplexers
02/21/2012US8120959 NAND string based NAND/NOR flash memory cell, array, and memory device having parallel bit lines and source lines, having a programmable select gating transistor, and circuits and methods for operating same
02/21/2012US8120957 Nonvolatile semiconductor storage device, nonvolatile semiconductor storage system and method of managing of defective column in nonvolatile semiconductor storage system
02/21/2012US8120956 Single-transistor EEPROM array and operation methods
02/21/2012US8120954 Method, apparatus, and system for erasing memory
02/21/2012US8120953 Reading method of nonvolatile semiconductor memory device
02/21/2012US8120952 Memory device with a decreasing dynamic pass voltage for reducing read-disturb effect
02/16/2012WO2012021775A2 System and method to initiate a housekeeping operation at a mobile device
02/16/2012WO2012021379A2 Verify before program resume for memory devices
02/16/2012WO2012021237A1 Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of reading to and writing a memory cell, and methods of programming a memory cell
02/16/2012WO2012020278A1 Data coding using divisions of memory cell states
02/16/2012WO2011159070A3 Nonvolatile memory device and method for reading same
02/16/2012US20120042219 States Encoding in Multi-Bit Flash Cells for Optimizing Error Rate
02/16/2012US20120039131 Low-voltage eeprom array
02/16/2012US20120039130 Nonvolatile Memory Devices, Channel Boosting Methods Thereof, Programming Methods Thereof, And Memory Systems Including The Same
02/16/2012US20120039129 Cost saving electrically-erasable-programmable read-only memory (eeprom) array
02/16/2012US20120039128 Three dimensional stacked nonvolatile semiconductor memory
02/16/2012US20120039127 Flash memory device and method of operating the same
02/16/2012US20120039125 Nonvolatile Memory with Correlated Multiple Pass Programming
02/16/2012US20120039124 Non-Volatile Memory and Method With Improved Sensing Having Bit-Line Lockout Control
02/16/2012US20120039123 Multiple level programming in a non-volatile memory device
02/16/2012US20120039122 Multi-bit flash memory device and memory cell array
02/16/2012US20120039121 Programming non-volatile memory with high resolution variable initial programming pulse
02/16/2012US20120039120 Non-volatile memory device and method for programming the device, and memory system
02/16/2012DE10107833B4 Speicheranordnung und Verfahren zum Auslesen einer Speicheranordnung Memory device and method for reading a memory array
02/15/2012EP2417603A2 Analyzing monitor data information from memory devices having finite endurance and/or retention
02/15/2012EP2417602A2 Two pass erase for non-volatile storage
02/15/2012EP2417601A2 Diamond type quad-resistor cells of pram
02/15/2012EP2417600A2 Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines
02/15/2012CN102354694A Self-aligned vertical non-volatile semiconductor memory device
02/15/2012CN102354531A Methods for identifying non-volatile memory elements with poor subthreshold slope or weak transconductance
02/15/2012CN102354530A EEPROM reading device used for passive UHF RFID chip
02/15/2012CN102354529A Semiconductor memory device
02/15/2012CN102354528A Nonvolatile memory cell, and data programming, reading and erasing methods therefor
02/15/2012CN102354527A Method of reducing response time of solid state storage system
02/15/2012CN102354299A Memory card and semiconductor device
02/15/2012CN101692350B 硅-氧化物-氮化物-氧化物-硅型与非门闪存的擦除法 Silicon - oxide - nitride - oxide - silicon erase the NAND flash method
02/15/2012CN101458964B 传输数据流的电路及方法 Circuit and method for transmitting data streams
02/15/2012CN101425334B 一种实现nor flash坏块管理的方法及其控制电路 A method for implementing nor flash bad block management and its control circuit
02/14/2012US8117382 Data writing method for non-volatile memory and controller using the same
02/14/2012US8117380 Management of non-volatile memory systems having large erase blocks
02/14/2012US8117378 Preventing unintended permanent write-protection
02/14/2012US8116143 Method of erasing memory cell
02/14/2012US8116142 Method and circuit for erasing a non-volatile memory cell
02/14/2012US8116140 Saw-shaped multi-pulse programming for program noise reduction in memory
02/14/2012US8116138 Memory device distributed controller system
02/14/2012US8116134 Semiconductor memory device with improved ECC efficiency
02/14/2012US8116128 Semiconductor device
02/14/2012US8115239 Electric device comprising phase change material
02/09/2012WO2012018765A1 Natural threshold voltage distribution compaction in non-volatile memory
02/09/2012US20120036314 Memory devices having programmable elements with accurate operating parameters stored thereon
02/09/2012US20120033504 Erase voltage reduction in a non-volatile memory device
02/09/2012US20120033503 Charge trap flash memory device and an erasing method thereof
02/09/2012US20120033502 Method of reading data in non-volatile memory device, and device thereof
02/09/2012US20120033501 Nonvolatile memory device with 3d memory cell array
02/09/2012US20120033500 Natural threshold voltage distribution compaction in non-volatile memory
02/09/2012US20120033499 Flash memory device and reading method thereof
02/09/2012US20120033498 Semiconductor memory device and method of reading the same
02/09/2012US20120033497 Non-volatile memory device having configurable page size
02/09/2012US20120033495 Semiconductor device
02/09/2012US20120033494 Detecting the completion of programming for non-volatile storage
02/09/2012US20120033493 Erase completion recognition
02/09/2012US20120033492 Data writing method and data storage device
02/09/2012US20120033491 Programming of memory cells in a nonvolatile memory using an active transition control
02/09/2012DE112005001325T5 Lösch-Algorithmus für einen Multilevel-Bit-Flash-Speicher Erase algorithm for a multi-level flash memory bits
02/08/2012EP2416326A1 Semiconductor device and driving method thereof
02/08/2012EP2416325A1 Semiconductor device
02/08/2012EP2416324A1 Semiconductor device and method for driving semiconductor device
02/08/2012EP2416323A1 Semiconductor device and driving method thereof
02/08/2012EP2321826B1 Memory system with sectional data lines
02/08/2012CN102349112A Memory device having improved programming operation
02/08/2012CN102349111A Enhanced addressability for serial non-volatile memory
02/08/2012CN102347079A Device and method using password protection memory
02/08/2012CN102347078A Methods and systems for dynamically controlling operations in a non-volatile memory
02/08/2012CN102347077A Nonvolatile memory cell with extended well
02/08/2012CN102347076A Memory element and injection method for memory selecting hot carriers of NAND gate flash memory
02/08/2012CN102347075A Semiconductor device
02/08/2012CN102347074A Variable-resistance memory device and its driving method
02/08/2012CN102347073A Resistance control method for nonvolatile variable resistive element
02/08/2012CN101877355B Memory devices and methods for manufacturing and methods for operating the device
02/08/2012CN101593547B 感测放大器电路及其数据感测方法 Sense amplifier circuit and data sensing method
02/08/2012CN101471135B 闪存器件及其操作方法 Flash memory device and method of operation
02/08/2012CN101388250B 闪存装置的编程方法 Programming the flash memory device
02/08/2012CN101127240B 降低非易失性存储器存储元件间耦合效应的方法 Reduce inter-volatile memory storage element method for coupling effects
02/07/2012US8111557 Nonvolatile memory device and method of programming the device
02/07/2012US8111555 NAND step voltage switching method
02/07/2012US8111553 Non-volatile semiconductor memory device in which program disturb is reduced and method of programming the same
02/07/2012US8111551 Nonvolatile semiconductor memory device having protection function for each memory block
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