Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
05/2012
05/23/2012CN1983619B Data read/write device
05/23/2012CN1877741B Method for analyzing critical state mutual action of mult-bit memory unit
05/23/2012CN1630911B Semiconductor device for partial page programming of multi level flash
05/23/2012CN102473460A 将数据恢复到闪存器件中 Restoring data to the flash memory device
05/23/2012CN102473448A 具有电阻性感测元件块擦除和单向写入的非易失性存储器阵列 Has a resistive sensing element unidirectional block erase and write nonvolatile memory array
05/23/2012CN102473135A Write-erase endurance lifetime of memory storage devices
05/23/2012CN102468242A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
05/23/2012CN102467969A 为数据存储设备中的辅助电源充电的方法及相关设备 A data storage device for charging the auxiliary power supply method and related equipment
05/23/2012CN102467968A 非易失性存储器设备及其读取方法和存储器系统 Non-volatile memory device and memory system and a method for reading
05/23/2012CN102467967A 用于电可擦写只读存储器的读出电路和读出方法 Electrically erasable read-only memory for a read-out circuit and reading method
05/23/2012CN102467966A Semiconductor memory device and method of operating the same
05/23/2012CN102467965A Nonvolatile memory devices, erasing methods thereof and memory systems including the same
05/23/2012CN102467964A Three-dimensional stacked semiconductor integrated circuit and tsv repair method thereof
05/23/2012CN102467963A 半导体存储装置 The semiconductor memory device
05/23/2012CN101681312B 存储器系统 Memory system
05/23/2012CN101677018B Secrecy system of memory and secrecy method for reading in memory burn mode
05/23/2012CN101587905B Phase change nanometer transistor unit device and manufacturing method thereof
05/23/2012CN101582428B Nonvolatile semiconductor memory cell with electron-trapping erase state and method for operating the same
05/23/2012CN101567218B Method for generating flash memory identification code
05/23/2012CN101388239B 半导体存储器设备 The semiconductor memory device
05/23/2012CN101211252B Memorizer memory devices
05/23/2012CN101194322B non-volatile memory system and its reading method
05/23/2012CN101075643B Nonvolatile memory unit and method for operating the same
05/22/2012US8184488 Systems and methods for controlling integrated circuit operation with below ground pin voltage
05/22/2012US8184486 Tunable current driver and operating method thereof
05/22/2012US8184483 Nonvolatile memory device and method of programming the same
05/22/2012US8184482 Nonvolatile memory device for preventing a source line bouncing phenomenon
05/22/2012US8184480 Multi-level nonvolatile memory device with reduced number of read voltages based on a cell address and method for operating the same
05/22/2012US8184479 Reducing the impact of interference during programming
05/22/2012US8184478 Apparatus with reduced program disturb in non-volatile storage
05/18/2012WO2012062132A1 Self-programming method and device for file system based on nand flash memory
05/17/2012US20120124278 Memory system for portable telephone
05/17/2012US20120120732 Nonvolatile memory device and read method thereof
05/17/2012US20120120731 Semiconductor memory device and related method of programming
05/17/2012US20120120730 Method and apparatus for adjusting maximum verify time in nonvolatile memory device
05/17/2012US20120120729 Word line kicking when sensing non-volatile storage
05/17/2012US20120120727 Method of providing an operating voltage in a memory device and a memory controller for the memory device
05/17/2012US20120120726 Variable initial program voltage magnitude for non-volatile storage
05/17/2012US20120120725 Semiconductor memory device and method of operating the same
05/16/2012CN1698131B Highly compact non-volatile memory and method thereof
05/16/2012CN1540762B Flash memory possessing groove type selection grid and manufacturing method
05/16/2012CN102460584A 在非易失性存储器器件内将以二进制格式存储的数据折叠为多状态格式 In the non-volatile memory device will store binary data format folded into a multi-state format
05/16/2012CN102456745A Flash memory as well as preparation method and operation method thereof
05/16/2012CN102456660A Stacked semiconductor package, semiconductor device including the stacked semiconductor package and method of manufacturing the stacked semiconductor package
05/16/2012CN102456411A 半导体存储器 Semiconductor memory
05/16/2012CN102456410A Semiconductor memory apparatus and method of operating the same
05/16/2012CN102456409A 改善sonos存储器中擦除深度的方法 Improving sonos memory erasing method depth
05/16/2012CN102456408A 多层单元反或型闪存装置 MLC NOR-type flash memory device
05/16/2012CN102456407A Magnetic memory element with multi-domain storage layer
05/16/2012CN102456406A 具有片内终结电路的非易失性存储器件及其控制方法 With non-volatile memory device and control method of on-chip termination circuit
05/16/2012CN102456405A 一种应用于Flash EEPROM的动态参考源电路 Applied to Flash EEPROM dynamic reference source circuit
05/16/2012CN102456404A 非易失性存储器存储装置、存储器控制器与数据存储方法 Non-volatile memory storage device, a memory controller and data storage method
05/16/2012CN102456403A Method for realizing four-bit memory by utilizing split groove gate flash memory
05/16/2012CN102456402A Nonvolatile memory architecture
05/16/2012CN102456401A 区块管理方法、存储器控制器与存储器储存装置 Block management, memory controller and memory storage device
05/16/2012CN102456400A 使用于闪存的控制方法与控制器 The control method used for a flash controller
05/16/2012CN102456397A Read distribution management for phase change memory
05/16/2012CN102456240A 基于can总线的车载记录装置及其存储数据的控制方法 Based on in-vehicle recording device and control method for storing data can bus
05/16/2012CN101728481B Method for manufacturing phase-change semiconductor device and phase-change semiconductor device
05/16/2012CN101213614B Erasing non-volatile memory using individual verification and additional erasing of subsets of memory cells
05/16/2012CN101202105B Multi-bit flash memory device including memory cells storing different numbers of bits
05/16/2012CN101178936B Decoders and decoding methods for nonvolatile semiconductor memory devices
05/16/2012CN101174462B Method for programming multi-layer nonvolatile storage device
05/16/2012CN101165807B Flash memory devices and methods of operating the same
05/16/2012CN101154464B Semiconductor device including a high voltage generation circuit and method of generating a high voltage
05/15/2012US8179734 Semiconductor device
05/15/2012US8179727 NAND flash memory devices and methods of LSB/MSB programming the same
05/15/2012US8179726 Method and apparatus for programming flash memory
05/15/2012US8179725 Programming rate identification and control in a solid state memory
05/15/2012US8179724 Sensing for memory read and program verify operations in a non-volatile memory device
05/15/2012US8179723 Non-volatile memory with boost structures
05/15/2012US8179722 Page buffer circuit and nonvolatile memory device
05/15/2012US8179718 Memory device and memory programming method
05/15/2012US8179717 Maintaining integrity of preloaded content in non-volatile memory during surface mounting
05/10/2012WO2012060858A1 Data signal mirroring
05/10/2012WO2012060857A1 Copyback operations
05/10/2012WO2012009313A3 3 transistor (n/p/n) non-volatile memory cell without program disturb
05/10/2012US20120117663 Semiconductor memory card and data reading apparatus, and data reading/reprodcuing apparatus
05/10/2012US20120117307 Non-volatile memory (nvm) erase operation with brownout recovery technique
05/10/2012US20120113727 Configuration finalization on first valid nand command
05/10/2012US20120113726 Flash memory and fabrication method and operation method for the same
05/10/2012US20120113725 Nonvolatile memory device and method of programming the device
05/10/2012US20120113724 Semiconductor memory
05/10/2012US20120113723 Mitigation of data corruption from back pattern and program disturb in a non-volatile memory device
05/10/2012US20120113722 Selecting programming voltages in response to at least a data latch in communication with a sense amplifier
05/10/2012US20120113721 Flexible memory operations in nand flash devices
05/10/2012US20120113720 Semiconductor memory device and erase method thereof
05/10/2012US20120113719 Nonvolatile semiconductor storage device, nonvolatile semiconductor storage system and method of managing of defective column in nonvolatile semiconductor storage system
05/10/2012US20120113717 Semiconductor memory device with improved ecc efficiency
05/10/2012US20120113716 Structure and Method for Shuffling Data Within Non-Volatile Memory Devices
05/10/2012US20120113715 Non-Volatile Memory With Improved Sensing By Reducing Source Line Current
05/10/2012US20120113714 Method for programming a multi-state non-volatile memory (nvm)
05/10/2012US20120113713 Methods of Operating a Memory Device Having a Buried Boosting Plate
05/10/2012DE102011085781A1 Speichersystem, Verfahren zum Betreiben eines Speichersystems und Steuereinheit Memory system, method of operating a storage system, and control unit
05/10/2012DE102011054333A1 Verfahren zum Laden von Hilfsspannungsversorgungsleitungen in Datenspeichervorrichtungen und damit in Beziehung stehenden Vorrichtungen A method for loading auxiliary voltage supply lines in data storage devices, and thus related devices
05/09/2012EP2450902A2 Apparatus & method for hierarchical decoding of dense memory arrays using multiple levels of multiple-headed decoders
05/09/2012EP2449587A1 Electronic device having a molding compound including a composite material
05/09/2012EP2449556A2 System and method responsive to a rate of change of a performance parameter of a memory
05/09/2012EP1614119B1 Read and erase verify methods and circuits suitable for low voltage non-volatile memories
05/09/2012CN1992080B Semiconductor device
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