G11C 16 - Erasable programmable read-only memories

Patents for G11C 16 - Erasable programmable read-only memories (44,373)
12/2011
12/22/2011	WO2011159705A2 Write and erase scheme for resistive memory device
12/22/2011	WO2011159070A2 Nonvolatile memory device and method for reading same
12/22/2011	WO2011157096A1 Resistive random access memory device and manufacturing method thereof
12/22/2011	US20110310675 Local sensing in a memory device
12/22/2011	US20110310674 System and Method for Bit-Line Control
12/22/2011	US20110310673 Multi-page program method, non-volatile memory device using the same, and data storage system including the same
12/22/2011	US20110310672 Threshold Voltage Digitizer for Array of Programmable Threshold Transistors
12/22/2011	US20110310671 Reducing the impact of interference during programming
12/22/2011	US20110310670 Vertically-integrated nonvolatile memory devices having laterally-integrated ground select transistors
12/22/2011	US20110310669 Logic-Based Multiple Time Programming Memory Cell
12/22/2011	US20110310668 Flash Memory Device and Program Method Thereof
12/22/2011	US20110310667 Semiconductor memory device
12/22/2011	US20110310666 Programming method for nand flash memory device to reduce electrons in channels
12/22/2011	US20110310665 Nonvolatile Memory Device
12/22/2011	US20110310664 Non-volatile memory apparatus and methods
12/22/2011	US20110309878 Boost circuit
12/22/2011	US20110309428 Semiconductor device
12/21/2011	EP2398022A2 Logic-based multiple time programming memory cell
12/21/2011	EP2396791A1 Apparatus and method for enhancing flash endurance by encoding data
12/21/2011	EP2396729A1 Memory system and method of controlling memory system
12/21/2011	EP2291847B1 Reverse order page writing in flash memories
12/21/2011	EP1676203B1 Method for writing memory sectors in a memory deletable by blocks
12/21/2011	CN202084306U 存储器烧录系统 Memory programming system
12/21/2011	CN1902599B 将数据更新到非易失性存储器系统和操作该系统的方法 Update the data to non-volatile memory system and method of operation of the system
12/21/2011	CN102292775A 存储器的适应性擦除和软编程 Adaptability erase and soft programming memory
12/21/2011	CN102290981A 一种电荷泵电路和采用所述电荷泵电路的闪速存储器 One kind of charge pump circuit using the charge pump circuit and a flash memory
12/21/2011	CN102290105A 具有多位存储器件的数据存储系统及其操作方法 Having a data storage system and method of operating multi-bit memory device
12/21/2011	CN102290104A 非易失性存储器件 Non-volatile memory device
12/21/2011	CN102290103A 可达到无穷次疲劳的相变存储器 Fatigue can achieve infinitely phase change memory
12/21/2011	CN102290101A 源线偏置电路及存储器 Source line bias circuit and memory
12/21/2011	CN101499318B 存储器编程方法以及数据存取方法 Memory programming and data access methods
12/21/2011	CN101499317B 存储器装置以及数据读取方法 Memory means and a data reading method
12/21/2011	CN101430932B 存储器中存储单元的写入方法以及利用此方法的存储器装置 Method of writing stored in the memory unit, and a memory device using this method
12/21/2011	CN101373638B 控制对包括多级单元的闪存器件的回拷贝操作的方法 Control means including multi-level flash memory device back to the copy operation method
12/20/2011	US8082456 Data controlled power supply apparatus
12/20/2011	US8082382 Memory device with user configurable density/performance
12/20/2011	US8081520 Over erase correction method of flash memory apparatus
12/20/2011	US8081519 Adaptive erase and soft programming for memory
12/20/2011	US8081518 Semiconductor memory device
12/20/2011	US8081517 Solid state storage system for uniformly using memory area and method controlling the same
12/20/2011	US8081516 Method and apparatus to suppress fringing field interference of charge trapping NAND memory
12/20/2011	US8081515 Trench monos memory cell and array
12/20/2011	US8081514 Partial speed and full speed programming for non-volatile memory using floating bit lines
12/20/2011	US8081511 Flash memory device with redundant columns
12/15/2011	WO2011155120A1 Method for shielding main bit line for reference cell
12/15/2011	WO2011126618A3 4-transistor non-volatile memory cell with pmos-nmos-pmos-nmos structure
12/15/2011	US20110307682 Block management for mass storage
12/15/2011	US20110307649 Multiple level cell memory device with single bit per cell, re-mappable memory block
12/15/2011	US20110305092 Non-volatile memory device with controlled discharge
12/15/2011	US20110305091 Semiconductor memory device and related methods for performing read and verification operations
12/15/2011	US20110305090 Memory controller self-calibration for removing systemic influence
12/15/2011	US20110305089 Threshold detecting method and verify method of memory cells
12/15/2011	US20110305088 Hot carrier programming in nand flash
12/15/2011	US20110305087 Flash memory device and reading method thereof
12/15/2011	US20110305086 Semiconductor memory device
12/15/2011	US20110305082 Methods and apparatus for soft data generation for memory devices
12/15/2011	US20110305081 Method of programming nonvolatile memory device
12/15/2011	US20110305080 Post-Facto Correction for Cross Coupling in a Flash Memory
12/15/2011	US20110305079 Nonvolatile memory device including dummy memory cell and program method thereof
12/15/2011	US20110305076 Phase change memory device
12/15/2011	DE10297198B4 Speicher mit Kohlenstoff enthaltende Zwischenschicht, insbesondere für einen Phasenübergangsspeicher und Verfahren zur Herstellung Memory with carbon-containing intermediate layer, in particular for a phase-change memory and processes for preparing
12/14/2011	EP2394221A2 Multiple plane, non-volatile memory with synchronized control
12/14/2011	EP2393957A1 Method of forming memory cell using gas cluster ion beams
12/14/2011	CN1868068B 完全耗尽型绝缘衬底硅cmos逻辑 Fully depleted silicon insulating substrate cmos logic
12/14/2011	CN102282623A 包括具有相变存储器件的分压器的非易失存储器电路 Include non-volatile memory circuit having a phase change memory element of the voltage divider
12/14/2011	CN102280141A 一种闪速存储器芯片编程方法及装置 One kind of flash memory chip programming method and apparatus
12/14/2011	CN102280140A 双分离栅快闪存储阵列的编程方法 Double separation programming flash memory array grid
12/14/2011	CN102280139A 使用具有可重新编程电阻的纳米管制品的存储器阵列 Resistance can be reprogrammed using a nanotube array memory products
12/14/2011	CN102280138A 具有累积写入特征的存储方法、存储器和存储系统 Storage method has accumulated write features, memory, and storage systems
12/14/2011	CN102280128A 存储器 Memory
12/14/2011	CN101689604B 电子装置及其制造方法 Electronic device and method of manufacturing
12/14/2011	CN101635165B 用低压mos晶体管耐高压的解码电路和实现方法 Mos transistors with low-voltage high voltage decoding circuitry and implementation
12/14/2011	CN101101791B 非易失性存储器及其控制方法 A nonvolatile memory and its control method
12/13/2011	US8078797 Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
12/13/2011	US8077524 Correcting for over programming non-volatile storage
12/13/2011	US8077523 Semiconductor memory device with a stacked gate including a charge storage layer and a control gate and method of controlling the same
12/13/2011	US8077521 Bitline current generator for a non-volatile memory array and a non-volatile memory array
12/13/2011	US8077519 Programming a memory device to increase data reliability
12/13/2011	US8077518 E/P durability by using a sub-range of a full programming range
12/13/2011	US8077516 Method and apparatus for accessing memory with read error by changing comparison
12/13/2011	US8077515 Methods, devices, and systems for dealing with threshold voltage change in memory devices
12/13/2011	US8077512 Flash memory cell and method for operating the same
12/13/2011	US8077511 Hybrid non-volatile memory
12/13/2011	US8076709 Nonvolatile semiconductor memory device
12/08/2011	WO2011153436A1 Vertically stackable dies having chip identifier structures
12/08/2011	WO2011153000A2 Advanced bitwise operations and apparatus in a multi-level system with nonvolatile memory
12/08/2011	WO2011152938A1 Memory device comprising a junctionless thin- film transistor
12/08/2011	WO2011150749A1 Resistive random access memory device, manufacturing method and operation method thereof
12/08/2011	WO2011150748A1 Embedded nonvolatile memory cell and working method thereof, memory array
12/08/2011	US20110302354 Systems and methods for reliable multi-level cell flash storage
12/08/2011	US20110299343 Non-volatile memory device, precharge voltage controlling method thereof, and system including the same
12/08/2011	US20110299342 Flash memory device and systems and reading methods thereof
12/08/2011	US20110299341 Method of programming a semiconductor memory device
12/08/2011	US20110299340 Non-Volatile Memory Having 3d Array of Read/Write Elements and Read/Write Circuits and Method Thereof
12/08/2011	US20110299339 Nonvolatile semiconductor memory, method for reading out thereof, and memory card
12/08/2011	US20110299338 Memory system and method of accessing a semiconductor memory device
12/08/2011	US20110299337 Methods and apparatus for an isfet
12/08/2011	US20110299336 Single-polysilicon layer non-volatile memory and operating method thereof
12/08/2011	US20110299335 Memory system and method of accessing a semiconductor memory device
12/08/2011	US20110299334 Nonvolatile semiconductor memory device

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