Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
11/2011
11/24/2011US20110286284 Multi-transistor non-volatile memory element
11/24/2011US20110286283 3d two-bit-per-cell nand flash memory
11/24/2011US20110286282 Semiconductor memory column decoder device and method
11/24/2011US20110286281 Reference current generator used for programming and erasing of non-volatile memory
11/24/2011US20110286280 Pulse Control For NonVolatile Memory
11/24/2011US20110286279 Erase and Programming Techniques to Reduce the Widening of State Distributions in Non-Volatile Memories
11/24/2011US20110286278 Method of storing e-fuse data in flash memory device
11/24/2011US20110286277 Semiconductor memory device and method for driving semiconductor memory device
11/24/2011US20110286276 Partial local self boosting for nand
11/24/2011US20110286275 Stacked Memory Devices And Method Of Manufacturing The Same
11/24/2011US20110286274 Nonvolatile memory device, programming method thereof and memory system including the same
11/24/2011US20110286273 Semiconductor device and method of controlling the same
11/24/2011US20110286272 Memory devices and their operation with different sets of logical erase blocks
11/24/2011US20110286271 Memory systems and methods for reading data stored in a memory cell of a memory device
11/24/2011US20110286270 Semiconductor memory device and an operating method thereof
11/24/2011US20110286269 Non-Volatile Electronic Memory Device With NAND Structure Being Monolithically Integrated On Semiconductor
11/24/2011US20110286268 Nonvolatile semiconductor memory
11/24/2011US20110286267 Pattern-Sensitive Coding of Data for Storage in Multi-Level Memory Cells
11/24/2011US20110286266 Memory semiconductor device and method of operating the same
11/24/2011US20110286265 Programming non-volatile storage with synchonized coupling
11/24/2011US20110284945 Semiconductor Device and a Method of Manufacturing the Same
11/23/2011EP2150958B1 Multi-level cell access buffer with dual function
11/23/2011EP1542235B1 Composite storage circuit and semiconductor device having the same composite storage circuit
11/23/2011CN202049755U Programmable device
11/23/2011CN1964053B Nanotube based nonvolatile memory device
11/23/2011CN1708812B Improved system for programming a non-volatile memory cell
11/23/2011CN102257568A Semiconductor device with main memory unit and auxiliary memory unit requiring preset operation
11/23/2011CN102254575A Method for realizing onboard programming of flash chip and equipment thereof
11/23/2011CN102254574A Semiconductor memory device and method of operating same
11/23/2011CN102254573A Non-volatile memory, and operation method thereof
11/23/2011CN102254572A Method for writing and simultaneously verifying nonvolatile memory unit
11/23/2011CN102254571A Enhanced multilevel memory
11/23/2011CN102254570A 半导体器件 Semiconductor devices
11/23/2011CN101587744B Multi-level data redundancy method of large scale FLASH memory array
11/23/2011CN101546810B Multilevel resistance conversion storage material containing germanium, antimony and selenium and application thereof
11/23/2011CN101499315B Average abrasion method of flash memory and its controller
11/23/2011CN101295540B Methods for enhancing retention characteristics of memory devices
11/23/2011CN101202112B Flash memory device and program method thereof
11/23/2011CN101067971B Programming method for flash memory capable of compensating reduction of read margin between states
11/22/2011US8065467 Non-volatile, electrically-programmable memory
11/22/2011US8064267 Erase voltage reduction in a non-volatile memory device
11/22/2011US8064264 Ornand flash memory and method for controlling the same
11/22/2011US8064262 Semiconductor device and method using stress information
11/22/2011US8064261 Semiconductor nonvolatile memory device
11/22/2011US8064260 Power supplies in flash memory devices and systems
11/22/2011US8064258 Method apparatus, and system providing adjustable memory page configuration
11/22/2011US8064257 Semiconductor memory device having faulty cells
11/22/2011US8064255 Architecture of a nvDRAM array and its sense regime
11/22/2011US8064253 Multi-valued ROM using carbon-nanotube and nanowire FET
11/22/2011US8064251 Memory device and method having charge level assignments selected to minimize signal coupling
11/22/2011US8064250 Providing a ready-busy signal from a non-volatile memory device to a memory controller
11/17/2011WO2011142799A2 Determining and using soft data in memory devices and systems
11/17/2011US20110283054 Nonvolatile memory
11/17/2011US20110280085 Memory device having improved programming operation
11/17/2011US20110280084 Determining and using soft data in memory devices and systems
11/17/2011US20110280083 Nonvolatile memory device and program method thereof
11/17/2011US20110280082 Non-volatile memory programming
11/17/2011US20110280081 Non-volatile semiconductor memory
11/17/2011US20110280080 Memory with multi-page read
11/17/2011US20110280079 Nand flash memory programming
11/17/2011US20110280078 Charge pump operation in a non-volatile memory device
11/17/2011US20110280077 Multi-semiconductor material vertical memory strings, strings of memory cells having individually biasable channel regions, memory arrays incorporating such strings, and methods of accessing and forming the same
11/17/2011US20110280076 Junctionless tft nand flash memory
11/17/2011US20110280075 Memory device and operating method thereof
11/17/2011US20110280074 Data Writing Method and Data Storage Device
11/17/2011US20110280072 Nonvolatile semiconductor memory device
11/17/2011US20110280071 Card controller controlling semiconductor memory including memory cell having charge accumulation layer and control gate
11/17/2011US20110280070 Nonvolatile memory device, system comprising nonvolatile memory device, and read operation of nonvolatile memory device
11/17/2011US20110280069 Iterative demodulation and decoding for multi-page memory architecture
11/17/2011US20110280068 Joint encoding of logical pages in multi-page memory architecture
11/17/2011US20110280067 Nonvolatile memory device, memory system having the same and programming method thereof
11/16/2011EP2156304B1 Solid state memory utilizing analog communication of data values
11/16/2011CN1652151B Semiconductor device
11/16/2011CN102246241A Data refresh for non-volatile storage
11/16/2011CN102246240A Non-volatile memory device for concurrent and pipelined memory operations
11/16/2011CN102246239A A method for programming and erasing an array of nmos eeprom cells that minimizes bit disturbances and voltage withstand requirements for the memory array and supporting circuits
11/16/2011CN102246238A Reversing a potential polarity for reading phase-change cells to shorten a recovery delay after programming
11/16/2011CN102243894A Wordline driver for memory
11/16/2011CN102243893A Memory circuits having a plurality of keepers
11/16/2011CN102243892A Method and apparatus for storing data
11/16/2011CN102243891A Staggered programming for resistive memories
11/16/2011CN101639692B Method, equipment and system for controlling a plurality of programmable logical components
11/16/2011CN101438350B Memory device
11/16/2011CN101436607B Electric resistance transition memory and manufacturing method thereof
11/16/2011CN101399083B Non-volatile memory device and method of operating the same
11/16/2011CN101330093B Memory element array
11/16/2011CN101273413B Portable data memory using single layer unit and multi-layer unit flash memory
11/16/2011CN101002278B Nonvolatile semiconductor memory
11/15/2011US8059468 Switched bitline VTH sensing for non-volatile memories
11/15/2011US8059467 Memory device and memory programming method
11/15/2011US8059466 Memory system and programming method thereof
11/15/2011US8059464 Nonvolatile memory device, methods of programming the nonvolatile memory device and memory system including the same
11/15/2011US8059463 Method for generating soft bits in flash memories
11/15/2011US8059462 Nonvolatile semiconductor memory device
11/15/2011US8059461 Flash memory device
11/15/2011US8059460 Method of programming nonvolatile memory device
11/15/2011US8059456 Programming a NAND flash memory with reduced program disturb
11/10/2011US20110276733 Memory System And Device With Serialized Data Transfer
11/10/2011US20110273936 Erase process for use in semiconductor memory device
11/10/2011US20110273935 Mitigating channel coupling effects during sensing of non-volatile storage elements
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