Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
07/2012
07/10/2012US8218363 Flash memory device and methods programming/reading flash memory device
07/05/2012WO2012091486A1 Adaptive digital phy for a high speed external memory interface
07/05/2012WO2012089334A2 Method and system for controlling loss of reliability of non-volatile memory
07/05/2012WO2012089011A1 Semiconductor device, chip and method for modifying bit data
07/05/2012US20120170381 Nonvolatile semiconductor memory device
07/05/2012US20120170380 Semiconductor memory device
07/05/2012US20120170379 Semiconductor memory device and method of operating the same
07/05/2012US20120170378 Read methods of semiconductor memory device
07/05/2012US20120170377 Local word line driver and flash memory array device thereof
07/05/2012US20120170376 Semiconductor memory device and operating method thereof
07/05/2012US20120170375 Vertical Nonvolatile Memory Devices and Methods of Operating Same
07/05/2012US20120170374 Nonvolatile memory device and related programming method
07/05/2012US20120170373 Semiconductor memory device and program methods thereof
07/05/2012US20120170372 Memory device biasing method and apparatus
07/05/2012US20120170371 Programming method of non-volatile memory device
07/05/2012US20120170370 Nonvolatile memory device and nonvolatile memory system employing same
07/05/2012US20120170369 Nonvolatile memory devices
07/05/2012US20120170368 Nonvolatile memory device and method for fabricating the same
07/05/2012US20120170367 Semiconductor device and method of generating voltages using the same
07/05/2012US20120170366 Semiconductor memory device and method of operating the same
07/05/2012US20120170365 Non-volatile memory devices and systems including the same, and methods of programming non-volatile memory devices
07/05/2012US20120170364 Method Of Programming A Nonvolatile Memory Device
07/05/2012US20120170363 Method for increasing program speed and control read windows for multi-level cell non-volatile memory
07/05/2012DE102011085988A1 Speicheranweisungen umfassend Parameter zum Beeinflussen eines Betriebszustands eines Speichers Store instructions comprising parameters for influencing an operating state of a memory
07/05/2012DE102011055714A1 Verfahren zum Programmieren einer nicht-flüchtigen Speichervorrichtung A method of programming a non-volatile memory device
07/04/2012EP2471069A1 Methods, devices, and systems for dealing with threshold voltage change in memory devices
07/04/2012EP2471068A1 Restoring data into a flash storage device
07/04/2012EP2471067A2 Interruptible nand flash memory
07/04/2012EP2471066A1 Partial speed and full speed programming for non-volatile memory using floating bit lines
07/04/2012CN202307160U Storage device, main engine device, circuit board, fluid container and system
07/04/2012CN202307159U 一种双存储器电子盘 A dual memory electronic disk
07/04/2012CN102549673A Programming memory with reduced pass voltage disturb and floating gate to-control gate leakage
07/04/2012CN102544022A Hybrid non-volatile flash memory and memory system thereof
07/04/2012CN102544019A Nonvolatile memory device and method for fabricating the same
07/04/2012CN102543198A Programming method of MLC (Multi-Level Cell) storage unit and device thereof
07/04/2012CN102543197A Semiconductor memory device and operating method thereof
07/04/2012CN102543196A Data reading method, memory storing device and controller thereof
07/04/2012CN102543195A Method and device for erasing nonvolatile memory
07/04/2012CN102543194A Erasing method for flash memory
07/04/2012CN102543193A Flash memory recording method as well as recording equipment and system
07/04/2012CN102543192A Method of programming a nonvolatile memory device
07/04/2012CN102543191A Method for writing data in semiconductor storage device and semiconductor storage device
07/04/2012CN102543190A Semiconductor device, chip and bit data modifying method
07/04/2012CN102543189A Semiconductor memory, interface circuit and access method thereof
07/04/2012CN102543188A Erasable reference point voltage setting method for nano crystal nonvolatile memory
07/04/2012CN102543187A High efficiency reading serial Flash buffer control circuit
07/04/2012CN102543186A Negative voltage generator, decoder, nonvolatile memory device and memory system
07/04/2012CN102543185A Integrated circuit high voltage switch and its switching method
07/04/2012CN102543184A Memory storage device, memory controller thereof and data writing method
07/04/2012CN102543183A Data write-in method, storage controller and storage device
07/04/2012CN102543182A Randomization circuit, memory control unit, memory, communicating system and method
07/04/2012CN102543181A Method and system for data storage
07/04/2012CN102543180A Multi-bit magnetic memory with independently programmable free layer domains
07/04/2012CN102543179A Concurrent read and write memory operations in a serial interface memory
07/04/2012CN102543178A Storage device, host device, circuit board, liquid receptacle, and system
07/04/2012CN102543177A Solid-state disk (SSD) static wear balance algorithm
07/04/2012CN102543176A Storage element and memory device
07/04/2012CN102543175A Fixture for burning basic input output system (BIOS) memory chip
07/04/2012CN102543169A Unified multilevel cell memory
07/04/2012CN102543168A Method for restraining impedance state fluctuation of resistance random access memory
07/04/2012CN101783171B Burst write method for phase change memory
07/04/2012CN101667458B Method for erasing solid state disk wholly and equipment thereof
07/04/2012CN101656104B Flash memory storage system and data writing method thereof
07/04/2012CN101635174B Method for modifying OTP memory map into ROM memory map and application thereof
07/04/2012CN101611386B Method of writing data into semiconductor memory and memory controller
07/04/2012CN101593153B Method, device and computer for writing data into nonvolatile storage medium
07/04/2012CN101587751B Method of erasing a nonvolatile memory device
07/04/2012CN101587748B Method of programming nonvolatile memory device
07/04/2012CN101576825B Embedded integrated circuit programmer
07/04/2012CN101540368B Memory cell and method for manufacturing a memory cell
07/04/2012CN101533673B Method of testing a non-volatile memory device
07/04/2012CN101388396B Semiconductor storage device, its manufacturing method and operating method, and portable electronic apparatus
07/04/2012CN101300554B Recovering from a non-volatile memory failure
07/04/2012CN101252168B Phase change memory cell with heater and method for fabricating the same
07/04/2012CN101236780B Circuit design standard and implementation method for 3-D solid structure phase change memory chip
07/04/2012CN101211661B Method of programming multi-level semiconductor memory device and multi-level semiconductor memory device
07/04/2012CN101192649B Storage node including diffusion barrier layer, phase change memory device having the same and methods of manufacturing the same
07/04/2012CN101154455B Memory device and method thereof
07/04/2012CN101149973B Semiconductor components
07/04/2012CN101138048B Decoder for memory device
07/04/2012CN101064359B Non-volatile memory devices including variable resistance material
07/03/2012US8213240 Non-volatile semiconductor memory with page erase
07/03/2012US8213239 Non-volatile memory device
07/03/2012US8213238 Non-volatile memory device having separate transistors for program and erase operations and reading operation and driving method thereof
07/03/2012US8213236 Flash memory
07/03/2012US8213234 Current sink system for source-side sensing
07/03/2012US8213232 Nonvolatile semiconductor memory, method for reading out thereof, and memory card
07/03/2012US8213231 NAND flash memory devices having wiring with integrally-formed contact pads and dummy lines and methods of manufacturing the same
07/03/2012US8213230 Nonvolatile memory device and method for operating the same
07/03/2012US8213229 Error control in a flash memory device
07/03/2012US8213228 Flash memory read performance
07/03/2012US8213227 4-transistor non-volatile memory cell with PMOS-NMOS-PMOS-NMOS structure
07/03/2012US8212305 Semiconductor device with improved insulating film and floating gate arrangement to decrease memory cell size without reduction of capacitance
07/03/2012CA2471041C Compositions and methods for enhancing corticosteriod delivery
06/2012
06/28/2012WO2012087815A1 Non-volatile memory and methods with soft-bit reads while reading hard bits with compensation for coupling
06/28/2012WO2012087805A2 Non-volatile memory and methods with asymmetric soft read points around hard read points
06/28/2012WO2012087586A2 Memory cell using bti effects in high-k metal gate mos
06/28/2012WO2012087569A1 Alternate page by page programming scheme
06/28/2012WO2012087411A1 Manual suspend and resume for non-volatile memory
06/28/2012WO2012087410A1 Alternate bit line bias during programming to reduce channel-to-floating gate coupling in memory
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