Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
08/2012
08/01/2012CN102623052A Data writing method for a non-volatile memory module, memory controller and memory storage apparatus
08/01/2012CN102623051A Nonvolatile memory system and flag data input/output method for the same
08/01/2012CN102623050A Semiconductor integrated circuit and memory system thereof
08/01/2012CN102623049A Nonvolatile memory cell and data programming, reading and erasure method thereof
08/01/2012CN102623048A Nonvolatile memory cell and data programming, reading and erasure method thereof
08/01/2012CN101057298B Memory and method for forming memory effect
07/2012
07/31/2012US8233327 Method of programming nonvolatile memory device
07/31/2012US8233326 Semiconductor non-volatile memory, charge accumulating method for semiconductor non-volatile memory, charge accumulating program storage medium
07/31/2012US8233325 NAND flash memory
07/31/2012US8233324 Simultaneous multi-state read or verify in non-volatile storage
07/31/2012US8233323 Non-volatile semiconductor storage device
07/31/2012US8233322 Multi-partition memory with separated read and algorithm datalines
07/31/2012US8233321 Semiconductor memory device and method for driving semiconductor memory device
07/31/2012US8233320 High speed high density NAND-based 2T-NOR flash memory design
07/31/2012US8232542 Phase change memory element with improved cyclability
07/31/2012US8232264 Free of medium chain glycerides; topical delivery to skin; vehicle comprising at least two penetration enhancers such as propylene glycol, diisopropyl adipate, dimethyl isosorbide, 1,2,6-hexanetriol, and benzyl alcohol, as well as solvents and emulsifiers
07/26/2012WO2012099948A1 Outputting a particular data quantization from memory
07/26/2012WO2012098441A1 Protection of memory field using illegal values
07/26/2012WO2012097695A1 System and method for programming flash memory
07/26/2012US20120191902 One-Die Flotox-Based Combo Non-Volatile Memory
07/26/2012US20120188826 Memory architecture having two independently controlled voltage pumps
07/26/2012US20120188825 Memory devices having source lines directly coupled to body regions and methods
07/26/2012US20120188824 Programming non-volatile storage with fast bit detection and verify skip
07/26/2012US20120188823 Semiconductor device
07/26/2012US20120188822 Control voltage generation circuit and non-volatile memory device including the same
07/26/2012US20120188821 Method for achieving four-bit storage using flash memory having splitting trench gate
07/26/2012US20120188820 System and method for addressing threshold voltage shifts of memory cells in an electronic product
07/26/2012DE10196011B3 Synchrone Speichereinrichtung und Verfahren zum Lesen von Daten von einer synchronen Speichereinrichtung Synchronous memory device and method for reading data from a synchronous memory device
07/25/2012EP2478523A2 Memory kink checking
07/25/2012CN202352352U Autonomous NAND refreshing system
07/25/2012CN102610653A Nanocrystalline floating gate memory and manufacturing method of nanocrystalline floating gate memory
07/25/2012CN102610277A Programming method of non-volatile memory device
07/25/2012CN102610276A SMBUS (System Management Bus) interface storage chip recording device
07/25/2012CN102610272A Programming or erasing method and device for resistive random access memory
07/25/2012CN101685669B Phase change memory device and method for operating the same
07/25/2012CN101656106B Method for writing data into EEPROM and device thereof
07/25/2012CN101364765B Charge pump circuit and nonvolatile memory
07/25/2012CN101232036B Phase change memory and manufacturing method thereofs
07/24/2012USRE43541 Control circuitry for a non-volatile memory
07/24/2012US8230165 Method of storing data on a flash memory device
07/24/2012US8230156 Method for controlling non-volatile semiconductor memory system
07/24/2012US8230083 Communication adapter apparatus, communication adapter, method of writing data in nonvolatile memory, and electric apparatus and ROM writer used for the method
07/24/2012US8228743 Memory cells containing charge-trapping zones
07/24/2012US8228742 Memory read methods, apparatus, and systems
07/24/2012US8228741 Nonvolatile memory and method with reduced program verify by ignoring fastest and/or slowest programming bits
07/24/2012US8228740 Method of operating nonvolatile memory device
07/24/2012US8228738 NAND flash memory device having dummy memory cells and methods of operating same
07/24/2012US8228737 Nonvolatile semiconductor memory
07/24/2012US8228736 Mobile system on chip (SoC) and mobile terminal using the mobile SoC, and method for refreshing a memory in the mobile SoC
07/24/2012US8228735 Memory array having memory cells coupled between a programmable drain select gate and a non-programmable source select gate
07/24/2012US8228730 Memory cell structures and methods
07/24/2012US8228729 Structure and method for shuffling data within non-volatile memory devices
07/24/2012US8228728 Programming method for multi-level cell flash for minimizing inter-cell interference
07/24/2012US8228727 Method for programming multi-level cell and memory apparatus
07/24/2012US8228726 N-channel SONOS non-volatile memory for embedded in logic
07/24/2012US8228725 Memory utilizing oxide nanolaminates
07/24/2012US8228724 Semiconductor device
07/19/2012WO2012097136A2 Methods, devices, and systems for adjusting sensing voltages in devices
07/19/2012WO2012096777A2 Memories and methods of programming memories
07/19/2012US20120185754 Flash memory architecture with separate storage of overhead and user data
07/19/2012US20120182811 Method of erasing a flash eeprom memory
07/19/2012US20120182810 Methods, devices, and systems for adjusting sensing voltages in devices
07/19/2012US20120182809 Data State-Dependent Channel Boosting To Reduce Channel-To-Floating Gate Coupling In Memory
07/19/2012US20120182808 Memory Device, Manufacturing Method and Operating Method of the Same
07/19/2012US20120182806 Memory Architecture of 3D Array With Alternating Memory String Orientation and String Select Structures
07/19/2012US20120182805 Strings of memory cells having string select gates, memory devices incorporating such strings, and methods of accessing and forming the same
07/19/2012US20120182804 Architecture for a 3d memory array
07/19/2012US20120182803 Non-volatile semiconductor memory device capable of improving failure-relief efficiency
07/19/2012US20120182802 Memory Architecture of 3D Array With Improved Uniformity of Bit Line Capacitances
07/19/2012US20120182801 Memory Architecture of 3D NOR Array
07/19/2012US20120182800 Semiconductor memory device capable of preventing a shift of threshold voltage
07/19/2012US20120182799 Data path for multi-level cell memory, methods for storing and methods for utilizing a memory array
07/19/2012US20120182798 Non-Volatile Semiconductor Memory
07/19/2012US20120182797 Sense operation in a memory device
07/19/2012US20120181621 Field effect devices controlled via a nanotube switching element
07/19/2012DE112010000955T5 NAND-Flasharchitektur mit mehrstufiger Zeilendecodierung NAND flash architecture with multi-level row decoding
07/18/2012EP2476120A2 Identifying at-risk data in non-volatile storage
07/18/2012EP1346364B1 Data processing device with a write once memory (wom)
07/18/2012CN1819059B Semiconductor memory device
07/18/2012CN1714408B Circuit arrangement and method for registering light-attacks
07/18/2012CN102598266A Semiconductor device
07/18/2012CN102598143A Double-pulse write for phase change memory
07/18/2012CN102598142A Data line management in a memory device
07/18/2012CN102598141A Suspension of memory operations for reduced read latency in memory arrays
07/18/2012CN102597975A One-time programmable memory device and methods thereof
07/18/2012CN102593061A Split grid flash memory and manufacturing method thereof
07/18/2012CN102593060A Split-gate flash memory unit and manufacturing method thereof
07/18/2012CN102593059A Split gate flash memory unit and making method thereof
07/18/2012CN102592679A Flash memory chip and testing method thereof
07/18/2012CN102592677A Memory device, memory control method, and program
07/18/2012CN102592676A Recyclable Nandflash storage system
07/18/2012CN102592675A Method of erasing a flash eeprom memory
07/18/2012CN102592674A Method for erasing single-transistor memory array
07/18/2012CN102592673A Programming method for memorizer device
07/18/2012CN102592672A Flash electrically erasable programmable read-only memory (EEPROM) dynamic reference resource circuit structure
07/18/2012CN102592671A Write circuit for phase change memories and write method thereof
07/18/2012CN102592670A Data writing method, memory controller and memory storage device
07/18/2012CN102592669A Semiconductor device and semiconductor memory device
07/18/2012CN102592668A Non-volatile memory device of performing partial-erase operation, memthod thereof, and apparatuses having the same
07/18/2012CN102592667A Method and device for programming resistance storage unit
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