Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
09/2012
09/13/2012US20120230109 Method of Setting Trim Codes for a Flash Memory and Related Device
09/13/2012US20120230108 Memory device with multiple planes
09/13/2012US20120230107 Semiconductor memory device having memory block configuration
09/13/2012US20120230106 Semiconductor memory devices, reading program and method for memory devices
09/13/2012US20120230105 Semiconductor Integrated Circuit
09/13/2012US20120230104 Non-volatile memory device and read method thereof
09/13/2012US20120230103 Nonvolatile Memory Device And Operating Method Thereof
09/13/2012US20120230102 Flash memory storage apparatus
09/13/2012DE102011089880A1 Verfahren zum Programmieren eines Speicherblocks eines nichtflüchtigen Speicherelements, nichtflüchtiges Speicherelement und Speichersystem A method for programming a memory block of a nonvolatile memory element, non-volatile storage element and storage system
09/12/2012EP2498259A2 Methods and system for erasing data stored in nonvolatile memory in low power applications
09/12/2012EP2498258A1 Non-volatile memory device with program current clamp and related method
09/12/2012CN202434208U Code entering device of radio frequency SIM (Subscriber Identity Module) card
09/12/2012CN202434189U Burning device of liquid crystal display module
09/12/2012CN102667948A Data state-dependent channel boosting to reduce channel-to-floating gate coupling in memory
09/12/2012CN102667946A Phase change memory element
09/12/2012CN102667945A Non-volatile memory and method with post-write read and adaptive re-write to manage errors
09/12/2012CN102667944A Non-volatile memory and method with post-write read and adaptive re-write to manage errors
09/12/2012CN102667943A Non-volatile memory and method with accelerated post-write read to manage errors
09/12/2012CN102660733A Silver nanoparticle film with mixed valent state, preparation method thereof and application thereof
09/11/2012US8264905 Nonvolatile memory device using variable resistive element
09/11/2012US8264891 Erase method and non-volatile semiconductor memory
09/11/2012US8264890 Two pass erase for non-volatile storage
09/11/2012US8264889 Memory device and semiconductor device
09/11/2012US8264888 Flash memory device configured to reduce common source line noise, methods of operating same, and memory system incorporating same
09/11/2012US8264886 Delayed activation of selected wordlines in memory
09/11/2012US8264885 Method for memory cell erasure with a programming monitor of reference cells
09/11/2012US8264883 Semiconductor memory device and method of reading the same
09/11/2012US8264882 Charge loss compensation during programming of a memory device
09/11/2012US8264879 Sensing memory cells
09/11/2012US8264878 Method and apparatus for increasing memory programming efficiency through dynamic switching of bit lines
09/11/2012US8263961 Thin film memory device having a variable resistance
09/07/2012WO2012118605A1 Adjustable programming speed for nand memory devices
09/07/2012WO2012118102A1 Semiconductor integrated circuit and semiconductor physical quantity sensor device
09/07/2012WO2012117311A1 Protection of stored data using optical emitting elements
09/06/2012US20120226963 Bad block management for flash memory
09/06/2012US20120224433 Semiconductor device and production method thereof
09/06/2012US20120224432 Over-erase verification and repair methods for flash memory
09/06/2012US20120224431 Programming and/or erasing a memory device in response to its program and/or erase history
09/06/2012US20120224430 Reading memory cell history during program operation for adaptive programming
09/06/2012US20120224429 Methods for programming a memory device and memory devices
09/06/2012US20120224428 Charge pump operation in a non-volatile memory device
09/06/2012US20120224427 Nonvolatile semiconductor memory device
09/06/2012US20120224426 Nonvolatile memory device and read method thereof
09/06/2012US20120224425 Using Temperature Sensors with a Memory Device
09/06/2012US20120224424 Nonvolatile memory device, method for fabricating the same, and method for operating the same
09/06/2012US20120224423 Programming and erasure schemes for analog memory cells
09/06/2012US20120224422 Nonvolatile Semiconductor Memory Device
09/06/2012US20120224421 System and method of decoding data from memory based on sensing information and decoded data of neighboring storage elements
09/06/2012US20120224420 Semiconductor memory device and decoding method
09/05/2012EP2495728A1 Using temperature sensors with a memory device
09/05/2012EP2494599A1 Semiconductor device
09/05/2012EP2494594A1 Semiconductor device
09/05/2012EP2494556A2 Double-pulse write for phase change memory
09/05/2012EP2494555A1 Non-volatile memory array architecture incorporating 1t-1r near 4f2 density memory cell
09/05/2012EP2494554A1 Non-volatile memory and method with accelerated post-write read to manage errors
09/05/2012EP2494553A1 Non-volatile memory and method with post-write read and adaptive re-write to manage errors
09/05/2012EP2494552A1 Non-volatile memory and method with post-write read and adaptive re-write to manage errors
09/05/2012EP2494450A2 One-time programmable memory device and methods thereof
09/05/2012CN202422765U 存储卡数据擦除装置 Memory card data erasing device
09/05/2012CN1930631B Variable current sinking for coarse/fine programming of non-volatile memory
09/05/2012CN102656641A Energy-efficient set write of phase change memory with switch
09/05/2012CN102656640A Rewritable memory device with multi-level, write-once memory cells
09/05/2012CN102655152A Storage device, manufacturing method and operating method thereof
09/05/2012CN102655026A Nonvolatile memory device, method for fabricating the same, and method for operating the same
09/05/2012CN102655025A System and method for burning baseband chip in double chip scheme
09/05/2012CN102130131B Flash memory and manufacturing method and operating method thereof
09/05/2012CN101652815B Non-volatile multilevel memory cell programming with more than two verify voltages per level
09/05/2012CN101640073B Memory and reading method thereof
09/05/2012CN101627371B Programming management data for nand memories
09/05/2012CN101620888B Reading method for mlc memory and reading circuit using the same
09/05/2012CN101599301B Memory and memory-writing method
09/05/2012CN101471134B Page buffer of non-volatile memory device and programming method of non-volatile memory device
09/05/2012CN101461011B Nand architecture memory devices and operation
09/05/2012CN101394144B Methods and systems for recording operating information of an electronically commutated motor and motor system
09/04/2012US8259508 Erase operation control sequencing apparatus, systems, and methods
09/04/2012US8259507 Word line booster for flash memory device
09/04/2012US8259506 Database of memory read thresholds
09/04/2012US8259505 Nonvolatile memory device with reduced current consumption
09/04/2012US8259504 Method of programming/erasing the nonvolatile memory
09/04/2012US8259503 Semiconductor device having a field effect source/drain region
09/04/2012US8259502 NAND flash memory
09/04/2012US8259501 Flash memory system operating in a random access mode
09/04/2012US8259500 Non volatile memory circuit with tailored reliability
09/04/2012US8259498 Continuous address space in non-volatile-memories (NVM) using efficient management methods for array deficiencies
09/04/2012US8259497 Programming schemes for multi-level analog memory cells
09/04/2012US8259496 Semiconductor memory device
09/04/2012US8259495 Semiconductor memory device and method for driving semiconductor memory device
09/04/2012US8259494 Semiconductor memory device capable of realizing a chip with high operation reliability and high yield
09/04/2012US8259493 Nonvolatile semiconductor storage device and method of testing the same
09/04/2012US8259491 Coarse and fine programming in a solid state memory
09/04/2012US8259483 Non-volatile memory module
09/04/2012US8258030 Manufacturing method of semiconductor device
08/2012
08/30/2012US20120218829 Nand flash architecture with multi-level row decoding
08/30/2012US20120218828 Methods for Programming Nonvolatile Memory Devices
08/30/2012US20120218827 Memory apparatus and method for controlling erase operation of the same
08/30/2012US20120218826 Non-volatile memory device and program method thereof
08/30/2012US20120218825 Wordline voltage transfer apparatus, systems, and methods
08/30/2012US20120218824 Independent well bias management in a memory device
08/30/2012US20120218823 Voltage generation and adjustment in a memory device
08/30/2012US20120218822 Content addressable memory
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