Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
09/2012
09/26/2012CN102693946A Methods for manufacturing semiconductor and memory
09/26/2012CN102693759A Non-sequential encoding scheme for multi-level cell (MLC) memory cells
09/26/2012CN102693758A Data reading method, memory storage device and memory controller
09/26/2012CN102693757A Key information management system, record reproduction apparatus, and key information management apparatus
09/26/2012CN102693756A 半导体存储装置 The semiconductor memory device
09/26/2012CN102693755A Memory device and electronic device
09/26/2012CN102693754A Method of programming a multi-bit per cell non-volatile memory
09/26/2012CN102693095A 数据操作方法及数据操作装置 Data manipulation method and a data manipulation device
09/26/2012CN101430931B Memory apparatus and method thereof for operating memory
09/25/2012US8275932 Method for transmitting special commands to flash storage device
09/25/2012US8275929 Memory and operating method thereof
09/25/2012US8274847 Semiconductor system
09/25/2012US8274845 Nonvolatile semiconductor memory device
09/25/2012US8274839 Method of erasing a flash EEPROM memory
09/25/2012US8274838 Programming non-volatile memory with bit line voltage step up
09/25/2012US8274837 NAND flash memory
09/25/2012US8274836 Nonvolatile semiconductor memory device and nonvolatile semiconductor memory system
09/25/2012US8274835 Mitigation of runaway programming of a memory device
09/25/2012US8274834 Nonvolatile semiconductor memory device including plural memory cells and a dummy cell coupled to an end of a memory cell
09/25/2012US8274833 Mitigation of data corruption from back pattern and program disturb in a non-volatile memory device
09/25/2012US8274830 Constant current read mode or constant current data retention mode nonvolatile memory device
09/25/2012US8274827 Memory device and operating method thereof
09/25/2012US8274826 NAND type flash memory
09/25/2012US8274825 Multi-level cell access buffer with dual function
09/25/2012US8274823 Methods and apparatus utilizing expected coupling effect in the programming of memory cells
09/25/2012US8274665 Image sensing and printing device
09/20/2012US20120240012 Apparatus and method for multi-mode operation of a flash memory device
09/20/2012US20120240011 Methods, devices, and systems for data sensing
09/20/2012US20120239866 Non-volatile memory with error correction for page copy operation and method thereof
09/20/2012US20120236658 Systems and methods for refreshing non-volatile memory
09/20/2012US20120236657 Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell
09/20/2012US20120236656 Apparatus and method for determining a read level of a memory cell based on cycle information
09/20/2012US20120236655 Reference Voltage Optimization for Flash Memory
09/20/2012US20120236654 Programming non-volatile memory with variable initial programming pulse
09/20/2012US20120236653 Self-check calibration of program or erase and verify process using memory cell distribution
09/20/2012US20120236652 Nonvolatile semiconductor memory device and method for manufacturing the same
09/20/2012US20120236651 System and method for determining data dependent noise calculation for a flash channel
09/20/2012US20120236650 Nand archtecture including resitive memory cells
09/20/2012US20120236649 Hot carrier programming of nand flash memory
09/20/2012US20120236648 Electrically addressed non-volatile memory maintentance
09/20/2012US20120236647 Hierarchical common source line structure in nand flash memory
09/20/2012US20120236646 Non-volatile memory cell
09/20/2012US20120236645 Semiconductor memory device
09/20/2012US20120236644 Semiconductor storage device
09/20/2012US20120236643 Interleaved flash storage system and method
09/20/2012US20120236642 Integrated circuit self aligned 3d memory array and manufacturing method
09/20/2012US20120236641 Asymmetric log-likelihood ratio for mlc flash channel
09/20/2012US20120236640 Reducing effects of erase disturb in a memory device
09/20/2012US20120236639 Reduction of Read Disturb Errors in NAND FLASH Memory
09/20/2012US20120236638 Obtaining soft information using a hard interface
09/20/2012US20120236637 Non-volatile semiconductor storage device
09/20/2012US20120236636 Non-volatile semiconductor storage device
09/20/2012US20120236635 Logic-Based Multiple Time Programming Memory Cell
09/20/2012US20120235705 Nonvolatile configuration memory
09/19/2012EP2499642A1 Method of analyzing the wear of a non volatile memory embedded in a secure electronic token
09/19/2012EP2499641A1 Data state-dependent channel boosting to reduce channel-to-floating gate coupling in memory
09/19/2012CN102683349A 存储元件和存储装置 Memory element and the memory device
09/19/2012CN102683348A 存储器元件和存储器设备 A memory element and a memory device
09/19/2012CN102682852A Semiconductor storage device
09/19/2012CN102682848A Memory device, memory card, solid state drive, system, and operation method thereof
09/19/2012CN102682847A Nonvolatile memory device and operating method thereof
09/19/2012CN102682846A Integrated circuit (IC) storing device, replacing method and producing method thereof
09/19/2012CN102682845A EEPROM (electrically erasable programmable read-only memory) memory cell and EEPROM
09/19/2012CN102682844A Replication circuit and application thereof
09/19/2012CN102682843A Nonvolatile semiconductor memory and data writing method
09/19/2012CN102682842A 半导体存储器系统 Semiconductor memory system
09/19/2012CN102682841A Using temperature sensors with a memory device
09/19/2012CN102682840A Method and structure for improving reliability of non-volatile resistive memory
09/19/2012CN102682839A Flash memory device and programming method thereof
09/19/2012CN102682838A Programming method for organic field effect transistor memory
09/19/2012CN102682828A Read amplifier circuit and nonvolatile storage device
09/19/2012CN101727976B Multi-layer flash-memory device, a solid hard disk and a segmented non-volatile memory system
09/19/2012CN101436434B Nonvolatile memory device, system, and method providing fast program and read operations
09/19/2012CN101351849B Method and device for continued verification in non-volatile memory write-in operation
09/19/2012CN101154445B Non-volatile memory device adapted to reduce coupling effect between storage elements and related methods
09/18/2012USRE43665 Reading non-volatile multilevel memory cells
09/18/2012US8270224 Voltage discharge circuits and methods
09/18/2012US8270222 Local word line driver of a memory
09/18/2012US8270221 Nonvolatile memory device and method of operating the same
09/18/2012US8270220 Nonvolatile semiconductor storage device and method for controlling the same
09/18/2012US8270219 Method of operating nonvolatile memory device capable of reading two planes
09/18/2012US8270218 Semiconductor memory device comprising memory cell having charge accumulation layer and control gate and method of erasing data thereof
09/18/2012US8270217 Apparatus for reducing the impact of program disturb
09/18/2012US8270216 Semiconductor storage device and method of manufacturing the same
09/18/2012US8270213 Flash memory array system including a top gate memory cell
09/18/2012US8269207 Memory device having variable resistance memory cells disposed at crosspoint of wirings
09/13/2012WO2012122188A1 Non-volatile storage element comprising a floating gate with a pn junction and method of forming the same
09/13/2012WO2012120591A1 Semiconductor device for preventing malfunction of non-volatile memory caused by instantaneous power failure
09/13/2012WO2012120400A1 Programming of phase-change memory cells
09/13/2012US20120230120 Nonvolatile semiconductor memory device and erasing method of nonvolatile semiconductor memory device
09/13/2012US20120230119 Word line driver in flash memory
09/13/2012US20120230118 Non-volatile memory cell having a heating element and a substrate-based control gate
09/13/2012US20120230117 Nonvolatile semicondcutor memory device
09/13/2012US20120230116 Sense operation in a stacked memory array device
09/13/2012US20120230115 High-speed verifiable semiconductor memory device
09/13/2012US20120230114 Semiconductor device and method of driving semiconductor device
09/13/2012US20120230113 Random telegraph signal noise reduction scheme for semiconductor memories
09/13/2012US20120230112 Nonvolatile memory device, driving method thereof, and memory system having the same
09/13/2012US20120230111 Level shifting circuit
09/13/2012US20120230110 Method and apparatus for addressing memory arrays
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