Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
10/2012
10/04/2012WO2012134097A2 Method for recording data, memory, and system for recording memory
10/04/2012WO2012134096A2 Non-volatile memory element, electronic control system, and method for operating non-volatile memory element
10/04/2012WO2012129955A1 Storing method, memory, and storing system characterized by accumulated data-writing
10/04/2012WO2012102785A3 Memory cell with multiple sense mechanisms
10/04/2012WO2012087586A3 Memory cell using bti effects in high-k metal gate mos
10/04/2012WO2012065018A3 Estimating wear of non-volatile, solid state memory
10/04/2012WO2012053015A3 Compression and decompression of data at high speed in solid state storage
10/04/2012US20120254515 Erase-suspend system and method
10/04/2012US20120250422 Interleaving Charge Pumps for Programmable Memories
10/04/2012US20120250420 Non-volatile semiconductor memory device
10/04/2012US20120250419 Method of controlling nonvolatile semiconductor memory device
10/04/2012US20120250418 Natural Threshold Voltage Distribution Compaction In Non-Volatile Memory
10/04/2012US20120250417 Hot electron injection nanocrystals mos transistor
10/04/2012US20120250416 Semiconductor memory device
10/04/2012US20120250415 Simultaneous multi-state read or verify in non-volatile storage
10/04/2012US20120250414 Reducing neighbor read disturb
10/04/2012US20120250413 Non-Volatile Semiconductor Memory with Page Erase
10/04/2012US20120250412 Flash memory apparatus and method for generating read voltage thereof
10/04/2012US20120250411 Nonvolatile semiconductor memory
10/04/2012US20120250410 Semiconductor integrated circuit and data read method
10/04/2012US20120250409 Semiconductor memory and control method thereof
10/04/2012US20120250408 Memory system, controller, and method for controlling memory system
10/03/2012EP2504840A1 Programming memory with bit line floating to reduce channel-to-floating gate coupling
10/03/2012EP2504838A1 Programming non-volatile memory with reduced number of verify operations
10/03/2012EP2504837A1 Programming memory with sensing-based bit line compensation to reduce channel -to-floating gate coupling
10/03/2012CN202473263U FLASH memorizer circuit supporting high erasing times
10/03/2012CN102714060A Paired programmable fuses
10/03/2012CN102714059A Access line dependent biasing schemes
10/03/2012CN102714058A Programming memory with bit line floating to reduce channel-to-floating gate coupling
10/03/2012CN102714057A Non-volatile memory array architecture incorporating 1t-1r near 4f2 memory cell
10/03/2012CN102714056A Resetting phase change memory bits
10/03/2012CN102714055A Programming memory with sensing-based bit line compensation to reduce channel -to-floating gate coupling
10/03/2012CN102709291A SONOS storage unit, operation method of SONOS and SONOS storage
10/03/2012CN102708922A Reference current adjustment method, reference current adjustment apparatus, and nonvolatile memory chip
10/03/2012CN102708921A Method for increasing erasing speed of storage unit and erasing method of storage unit
10/03/2012CN101939824B Method of charge holding circuit and time information measure, and method for forming EEPROM cell
10/03/2012CN101859775B Non-volatile memorizer and manufacturing, programming and reading method thereof
10/03/2012CN101796498B 存储器系统 Memory system
10/03/2012CN101719378B Data sensing device and data sensing method
10/03/2012CN101635173B Method and circuit for self calibration of non-volatile memories, and non-volatile memory circuit
10/03/2012CN101627443B Reading of a nonvolatile memory cell by taking account of the stored state of a neighboring memory cell
10/03/2012CN101593556B Method of programming non-volatile memory device
10/03/2012CN101521207B 集成电路 IC
10/03/2012CN101438353B Non-volatile memory with background data latch caching during read operations and methods therefor
10/03/2012CN101258554B Negative voltage discharge circuit, device and system to improve snapback in a non-volatile memory
10/02/2012US8281220 Apparatus for detecting and recovering from data destruction caused in an unaccessed memory cell by read, and method therefor
10/02/2012US8279694 Semiconductor memory device having a reduced noise interference
10/02/2012US8279682 Determining memory page status
10/02/2012US8279680 Semiconductor memory device and related method of programming
10/02/2012US8279679 Non-volatile semiconductor memory device, method of reading data therefrom, and semiconductor device
10/02/2012US8279678 Method of performing program verification operation using page buffer of nonvolatile memory device
10/02/2012US8279677 Power supply tracking single ended sensing scheme for SONOS memories
10/02/2012US8279676 Method of operating nonvolatile memory device
10/02/2012US8279675 Nonvolatile memory device and method of programming the same
10/02/2012US8279674 High read speed memory with gate isolation
10/02/2012US8279671 Flash memory devices, methods for programming the same, and memory systems including the same
10/02/2012US8279670 Non-volatile semiconductor storage device
10/02/2012US8279669 Semiconductor storage device to correct threshold distribution of memory cells by rewriting and method of controlling the same
10/02/2012US8279668 Apparatus and method of memory programming
10/02/2012US8278700 Semiconductor device
10/02/2012US8278695 Nonvolatile semiconductor memory device and manufacturing method thereof
09/2012
09/29/2012CA2735094A1 System and method for managing flash memory
09/27/2012WO2012129191A2 Logical interfaces for contextual storage
09/27/2012WO2012128938A2 Method and apparatus to reset a phase change memory and switch (pcms) memory cell
09/27/2012WO2012128914A1 Nonvolatile memory and method for improved programming with reduced verify
09/27/2012WO2012128884A2 Single transistor driver for address lines in a phase change memory and switch (pcms) array
09/27/2012WO2012106107A3 Control arrangements and methods for accessing block oriented nonvolatile memory
09/27/2012US20120243339 Nonvolatile memory devices including notched word lines
09/27/2012US20120243338 Nonvolatile semiconductor storage device
09/27/2012US20120243337 P-/metal floating gate non-volatile storage element
09/27/2012US20120243336 Nonvolatile programmable logic switch
09/27/2012US20120243335 Non-volatile semiconductor memory with bit line hierarchy
09/27/2012US20120243334 Flash memory device and programming method thereof
09/27/2012US20120243333 Apparatus comparing verified data to original data in the programming of memory cells
09/27/2012US20120243332 Non-Volatile Memory and Method with Power-Saving Read and Program-Verify Operations
09/27/2012US20120243331 Semiconductor memory device
09/27/2012US20120243330 Nonvolatile semiconductor storage device
09/27/2012US20120243329 Memory system
09/27/2012US20120243328 Nonvolatile semiconductor memory device and data erase method of the same
09/27/2012US20120243327 Nonvolatile semiconductor memory
09/27/2012US20120243326 Semiconductor storage device
09/27/2012US20120243325 Semiconductor memory device
09/27/2012US20120243324 Non-volatile semiconductor storage device
09/27/2012US20120243323 Nonvolatile Memory and Method for Improved Programming With Reduced Verify
09/27/2012US20120243322 Semiconductor integrated circuit adapted to output pass/fail results of internal operations
09/27/2012US20120243321 Semiconductor memory device
09/27/2012US20120243320 Semiconductor memory device
09/27/2012US20120243319 Nonvolatile semicondcutor memory device, ic card and portable apparatus
09/27/2012US20120243318 Non-volatile memory programming
09/27/2012US20120243317 Non-volatile semiconductor memory device
09/27/2012US20120243316 Memory devices and their operation with different sets of logical erase blocks
09/27/2012US20120243315 Semiconductor memory device
09/27/2012US20120243314 Nonvolatile semiconductor memory device
09/27/2012US20120243313 Semiconductor memory array and method for programming the same
09/27/2012US20120243312 Semiconductor memory device comprising memory cell having charge accumulation layer and control gate and method of erasing data thereof
09/27/2012US20120243311 Non-Sequential Encoding Scheme for Multi-Level Cell (MLC) Memory Cells
09/27/2012US20120243310 Method of programming a multi-bit per cell non-volatile memory
09/27/2012DE102012204256A1 Verfahren zum initiieren eines wiederauffrischungsvorgangs in einer nicht flüchtigen festkörper-speichereinrichtung A method for initiating a re-refresh operation in a non-volatile solid-state memory-device
09/26/2012EP2502272A1 Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
09/26/2012CN102693987A Split-gate flash memory unit and split-gate flash memory device
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