Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
06/2007
06/28/2007WO2007071922A1 Phase change memory materials, devices and methods
06/28/2007WO2006124159A3 Sense amplifier circuit for parallel sensing of four current levels
06/28/2007US20070150649 Nonvolatile memory and method of address management
06/28/2007US20070147144 Semiconductor integrated circuit device
06/28/2007US20070147136 Flash memory device and related erase operation
06/28/2007US20070147134 Low power NROM memory devices
06/28/2007US20070147133 Nonvolatile semiconductor memory device and program method therefor
06/28/2007US20070147132 Pixel circuits including boosting capacitors, methods of driving the same, and image sensors including the same
06/28/2007US20070147130 Method for programming of memory cells, in particular of the flash type, and corresponding programming architecture
06/28/2007US20070147128 Semiconductor memory device with memory cells each including a charge accumulation layer and a control gate
06/28/2007US20070147127 Nonvolatile memory device having self reprogramming function
06/28/2007US20070147126 Low power flash memory devices
06/28/2007US20070147125 High-speed verifiable semiconductor memory device
06/28/2007US20070147123 Split gate type non-volatile memory device and method of manufacturing the same
06/28/2007US20070147122 Electrically rewritable non-volatile semiconductor memory device
06/28/2007US20070147121 Nonvolatile semiconductor memory device
06/28/2007US20070147120 Page buffer and related reading method
06/28/2007US20070147119 Active boosting to minimize capacitive coupling effect between adjacent gates of flash memory devices
06/28/2007US20070147118 Methods for active boosting to minimize capacitive coupling effect between adjacent gates of flash memory devices
06/28/2007US20070147117 Nonvolatile semiconductor memory device
06/28/2007US20070147116 Use of flash memory blocks outside of the main flash memory array
06/28/2007US20070147114 Semiconductor memory system
06/28/2007US20070147113 Alternate sensing techniques for non-volatile memories
06/28/2007US20070147112 Sense amplifier and semiconductor memory device with the same
06/28/2007US20070147111 Flash memory array system including a top gate memory cell
06/28/2007US20070146049 Semiconductor integrated circuit device
06/28/2007US20070146010 Current supply circuit, ring oscillator, nonvolatile semiconductor device and electronic card and electronic device
06/28/2007US20070145462 Low tunnel barrier insulators
06/28/2007DE19983565B4 Interner Auffrisch-Modus für eine Flash-Speicherzellenmatrix Internal refresh mode for a flash memory cell array
06/28/2007DE102006062211A1 Verfahren zur Programmierung eines EEPROMs mit Einzelgatestruktur A method for programming of an EEPROM with a single gate structure
06/28/2007DE102006060257A1 Resistance based RAM e.g. magnetic RAM has current reference circuit including minimum of three resistance based RAM reference cells coupled in parallel and configured to provide reference current to sense amplifier circuits
06/28/2007DE102006008503A1 Verfahren zur Herstellung von nichtflüchtigen Speicherzellen Process for the preparation of non-volatile memory cells
06/28/2007DE102005061996A1 Conductive-bridging random access memory-memory device e.g. programmable metallization cell memory device, has writing potential units providing writing potential, and logic applying writing potential on memory unit in writing mode
06/27/2007EP1801811A1 Semiconductor device and word line boosting method
06/27/2007EP1801810A1 A configurable MVRAM and method of configuration
06/27/2007EP1800314A2 Memory using mixed valence conductive oxides
06/27/2007CN1988134A Method of erasing data and method of manufacturing nonvolatile semiconductor memory device
06/27/2007CN1988046A Semiconductor leakage current detector and leakage current measurement method, and semiconductor intergrated circuit thereof
06/27/2007CN1988041A Nonvolatile semiconductor memory device
06/27/2007CN1988040A Method and apparatus for operating a string of charge trapping memory cells
06/27/2007CN1988039A Flash storage scattered writing method
06/27/2007CN1987735A Apparatus and method for controlling supply voltage using hierarchical performance monitors
06/27/2007CN1323438C Semiconductor memory device
06/27/2007CN1323425C Method for manufacturing flash memory device
06/27/2007CN1323356C Pipelined parallel programming operation in a non-volatile memory system
06/26/2007US7237074 Tracking cells for a memory system
06/26/2007US7237057 Window-based flash memory storage system and management and access methods thereof
06/26/2007US7236419 Microcomputer and microprocessor having flash memory operable from single external power supply
06/26/2007US7236409 Semiconductor memory device provided with constant-current circuit having current trimming function
06/26/2007US7236408 Electronic circuit having variable biasing
06/26/2007US7236407 Flash memory architecture for optimizing performance of memory having multi-level memory cells
06/26/2007US7236406 Method of erasing data in non-volatile semiconductor memory device while suppressing variation
06/26/2007US7236405 Method for setting erasing pulses and screening erasing defects of nonvolatile memory
06/26/2007US7236403 Precharge arrangement for read access for integrated nonvolatile memories
06/26/2007US7236401 Nonvolatile semiconductor memory device and write/verify method thereof
06/26/2007US7236400 Erase verify for non-volatile memory using a bitline current-to-voltage converter
06/26/2007US7236399 Method for erase-verifying a non-volatile memory capable of identifying over-erased and under-erased memory cells
06/26/2007US7236398 Structure of a split-gate memory cell
06/26/2007US7236397 Redundancy circuit for NAND flash memory device
06/26/2007US7236394 Transistor-free random access memory
06/26/2007US7234645 Document having an encoded data structure
06/21/2007WO2007070808A2 Multi-bit-per-cell nvm structures and architecture
06/21/2007WO2007070424A1 Enhanced multi-bit non-volatile memory device with resonant tunnel barrier
06/21/2007WO2007069322A1 Semiconductor device and its control method
06/21/2007WO2007069321A1 Nonvolatile storage and method of controlling nonvolatile storage
06/21/2007WO2007069295A1 Semiconductor device and method of controlling the same
06/21/2007WO2007068689A1 Detector of abnormal destruction of memory sectors
06/21/2007WO2007008903A3 Memory cell comprising a thin film three-terminal switching device having a metal source and/or drain region
06/21/2007US20070143545 Flash Controller Cache Architecture
06/21/2007US20070143528 A software method of emulation of eeprom memory
06/21/2007US20070142344 fluocinonide or fluocinonide acetonide topical with two or more penetration enhancers
06/21/2007US20070142343 Mixture with penetration intensifiers, solvents and emulsifiers
06/21/2007US20070140039 Nonvolatile semiconductor memory
06/21/2007US20070140036 Semiconductor memory device
06/21/2007US20070140019 Method and apparatus for operating a string of charge trapping memory cells
06/21/2007US20070140018 Semiconductor Memory Device
06/21/2007US20070140017 Nonvolatile semiconductor memory device
06/21/2007US20070140013 Program method of non-volatile memory device
06/21/2007US20070140012 NAND architecture memory devices and operation
06/21/2007US20070140011 Reading non-volatile storage with efficient setup
06/21/2007US20070140010 Method and Apparatus for Operating a String of Charge Trapping Memory Cells
06/21/2007US20070140009 Virtual ground type nonvolatile semiconductor memory device
06/21/2007US20070140008 Independently programmable memory segments within an NMOS electrically erasable programmable read only memory array achieved by P-well separation and method therefor
06/21/2007US20070140007 Flash memory, memory control circuit, microcomputer and memory control method
06/21/2007US20070140006 Compensating for coupling in non-volatile storage
06/21/2007US20070140005 Multi-level dynamic memory device
06/21/2007US20070140004 Sensing scheme for low-voltage flash memory
06/21/2007US20070140003 Nonvolative semiconductor memory device and operating method thereof
06/21/2007US20070140002 Use of recovery transistors during write operations to prevent disturbance of unselected cells
06/21/2007US20070138541 Method of erasing data from SONOS memory device
06/21/2007US20070138534 Deposition of metal oxide and/or low asymmetrical tunnel barrier interpoly insulators
06/21/2007DE19921232B4 Verfahren zum gesicherten Schreiben eines Zeigers für einen Ringspeicher, zugehöriger Ringspeicher, Verwendung des Ringspeichers und Chipkarte mit Ringspeicher Method for the secure writing a pointer to a ring buffer, related storage ring, using the ring memory and chip card with circular buffer
06/21/2007DE102006058181A1 Phasenwechselspeicherbauelement und Verfahren zum Lesen von Daten in einem Phasenwechselspeicherbauelement Phase change memory device and method for reading data in a phase change memory device
06/21/2007DE10046051B4 Nichtflüchtiger ferroelektrischer Speicher und Schaltung zum Betreiben desselben Of the same non-volatile ferroelectric memory and circuit for operating
06/20/2007EP1798733A1 Verfahren und Vorrichtung zur Verifizierung der Ausführung eines Schreibbefehls in einem Speicher
06/20/2007EP1797566A1 Integrated circuit with memory cells comprising a programmable resistor and method for addressing memory cells comprising a programmable resistor
06/20/2007EP1797565A1 Resistive memory element with heater
06/20/2007EP1733398A4 Circuit for accessing a chalcogenide memory array
06/20/2007CN1983660A Method of manufacturing non-volatile memory element
06/20/2007CN1983619A 数据读/写装置 Data read / write device
1 ... 200 201 202 203 204 205 206 207 208 209 210 211 212 213 214 215 216 217 218 219 220 ... 444