Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
05/2007
05/24/2007US20070115721 Non-Volatile Memory and Method With Compensation for Source Line Bias Errors
05/24/2007US20070115720 Non-volatile semiconductor memory device and method for operating a non-volatile memory device
05/24/2007US20070115719 Pulse width converged method to control voltage threshold (Vt) distribution of a memory cell
05/24/2007DE202007002581U1 Speicherstick Memory Stick
05/24/2007DE112005001595T5 Verfahren zum Verbessern der Löschspannungsverteilung für ein Flash-Speicher-Array mit Platzhalterwortleitungen A method for improving the erasure voltage distribution for a flash memory array with dummy wordlines
05/24/2007DE10233194B4 Verfahren zum Beschreiben/Löschen nichtflüchtiger Halbleiterspeichervorrichtungen Method for writing / erasing non-volatile semiconductor memory devices
05/24/2007DE10158849B4 Nichtflüchtiges Speicherbauelement und zugehöriges Datenabtastverfahren Non-volatile memory device and associated data sampling
05/23/2007EP1788582A1 Erasing method for nonvolatile storage, and nonvolatile storage
05/23/2007EP1788581A2 Temperature tamper detection circuit and method
05/23/2007EP1788580A1 Test mode circuitry for a programmable tamper detection circuit
05/23/2007EP1788579A1 Test mode and test method for a temperature tamper detection circuit
05/23/2007EP1788578A1 Nonvolatile storage device and control method thereof
05/23/2007EP1788575A1 Method for accessing in reading, writing and programming to a NAND non-volatile memory electronic device monolithically integrated on semiconductor
05/23/2007EP1787329A2 Electric device comprising phase change material
05/23/2007EP1787300A1 Approach for zero dummy byte flash memory read operation
05/23/2007CN1969337A Reconstruction of signal timing in integrated circuits
05/23/2007CN1967896A Thermally contained/insulated phase change memory device and method (combined)
05/23/2007CN1967880A Mnos memory devices and methods for operating an mnos memory devices
05/23/2007CN1967879A Operation mehtod of single-poly non-volatile memory device
05/23/2007CN1967878A Operation mehtod of single-poly non-volatile memory device
05/23/2007CN1967859A Systems and methods for a magnetic memory device that includes two word line transistors
05/23/2007CN1967810A Method for programme IC memorizer
05/23/2007CN1967795A Nanocrystal silicon quantum dot memory device
05/23/2007CN1967723A Self-testing IC based on 3D memorizer
05/23/2007CN1967721A Evaluation circuit and evaluation method for the assessment of memory cell states
05/23/2007CN1967720A Semiconductor memory and method for controlling the same
05/23/2007CN1967718A One time programming memory cell, memory cell matrix and storage device
05/23/2007CN1967688A Information recording medium and method for manufacturing the same
05/23/2007CN1967504A Control apparatus and method of flash memory
05/23/2007CN1967461A Electric device with readable stored data
05/23/2007CN1967420A Series PLC host computer and fast parallel communication interface of expanding machine
05/23/2007CN1317768C Nonvolatile memory device utilizing a vertical nanotube
05/23/2007CN1317766C Semiconductor memory device and semiconductor device
05/22/2007US7221610 Charge pump circuit for generating high voltages required in read/write/erase/standby modes in non-volatile memory device
05/22/2007US7221602 Memory system comprising a semiconductor memory
05/22/2007US7221598 Method of controlling program operation of flash memory device with reduced program time
05/22/2007US7221597 Ballistic direct injection flash memory cell on strained silicon structures
05/22/2007US7221596 pFET nonvolatile memory
05/22/2007US7221593 Non-volatile memory device with erase address register
05/22/2007US7221592 Multiple level programming in a non-volatile memory device
05/22/2007US7221591 Fabricating bi-directional nonvolatile memory cells
05/22/2007US7221590 Flash memory devices having power level detection circuits
05/22/2007US7221589 Multiple level programming in a non-volatile memory device
05/22/2007US7221588 Memory array incorporating memory cells arranged in NAND strings
05/22/2007US7221587 Semiconductor device and programming method
05/22/2007US7221586 Memory utilizing oxide nanolaminates
05/22/2007US7221029 Semiconductor device and semiconductor memory using the same
05/22/2007US7221017 Memory utilizing oxide-conductor nanolaminates
05/22/2007US7221008 Bitline direction shielding to avoid cross coupling between adjacent cells for NAND flash memory
05/22/2007US7220634 NROM memory cell, memory array, related devices and methods
05/22/2007US7220424 For topical application, penetration
05/22/2007CA2312841C Programmable sub-surface aggregating metallization structure and method of making same
05/18/2007WO2007019168A3 Variable source resistor for flash memory
05/18/2007WO2006033099A3 States encoding in multi-bit flash cells for optimizing error rate
05/17/2007US20070111445 Flash memories and methods of fabricating the same
05/17/2007US20070109900 Nonvolatile memory apparatus
05/17/2007US20070109898 Semiconductor device
05/17/2007US20070109889 Non-Volatile Memory and Method With Reduced Source Line Bias Errors
05/17/2007US20070109881 Management of defective blocks in flash memories
05/17/2007US20070109877 Regulating voltages in semiconductor devices
05/17/2007US20070109872 Single-poly non-volatile memory device and its operation method
05/17/2007US20070109871 NROM flash memory with self-aligned structural charge separation
05/17/2007US20070109870 Semiconductor memory device
05/17/2007US20070109869 Operation method of non-volatile memory
05/17/2007US20070109864 Selective Operation of a Multi-State Non-Volatile Memory System in a Binary Mode
05/17/2007US20070109863 Power regulation in radio-frequency transmitters
05/17/2007US20070109861 Method for operating single-poly non-volatile memory device
05/17/2007US20070109860 Single-poly non-volatile memory device and its operation method
05/17/2007US20070109859 Latched Programming of Memory and Method
05/17/2007US20070109858 Novel Method and Structure for Efficient Data Verification Operation for Non-Volatile Memories
05/17/2007US20070109857 Non-volatile semiconductor memory device and operating method thereof
05/17/2007US20070109856 Method of managing fails in a non-volatile memory device and relative memory device
05/17/2007US20070109853 Systems and methods for a magnetic memory device that includes a single word line transistor
05/17/2007US20070109852 One time programming memory cell using MOS device
05/17/2007US20070109851 Method of manufacturing non-volatile memory and method of operating non-volatile memory array
05/17/2007US20070109850 Read operation for non-volatile storage that includes compensation for coupling
05/17/2007US20070109849 Compensating for coupling during read operations of non-volatile memory
05/17/2007US20070109848 Nonvolatile semiconductor memory and fabrication method for the same
05/17/2007US20070109847 Non-Volatile Memory and Method With Improved Sensing
05/17/2007US20070109846 Read operation for non-volatile storage that includes compensation for coupling
05/17/2007US20070109845 Compensating for coupling during read operations of non-volatile memory
05/17/2007US20070108502 Nanocrystal silicon quantum dot memory device
05/17/2007US20070108482 Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
05/16/2007EP1785998A1 Semiconductor device, semiconductor device testing method, and data writing method
05/16/2007CN1965371A Erase method for multi-level bit flash memory
05/16/2007CN1964053A Nanotube based nonvolatile memory device
05/16/2007CN1963949A Non-volatile phase-change memory device and method of reading the same
05/16/2007CN1963948A Semiconductor memory device with mos transistors and method of controlling the same
05/16/2007CN1963947A Programmable memory cell and operation method
05/16/2007CN1963946A Non-volatile memory devices with transistor and diode as on-off cell
05/16/2007CN1963787A Access method for flash memory of embedded system and access circuit
05/16/2007CN1316625C Non-volatile memory and method of forming thereof
05/16/2007CN1316598C Integrated circuit and method for programming charge storage memory cells
05/16/2007CN1316504C Semiconductor memory
05/15/2007US7219285 Flash memory
05/15/2007US7218554 Method of refreshing charge-trapping non-volatile memory using band-to-band tunneling hot hole (BTBTHH) injection
05/15/2007US7218553 Method for programming memory cells including transconductance degradation detection
05/15/2007US7218552 Last-first mode and method for programming of non-volatile memory with reduced program disturb
05/15/2007US7218551 Multiple level cell memory device with single bit per cell, re-mappable memory block
05/15/2007US7217945 Method to selectively increase the top resistance of the lower programming electrode in a phase-change memory cell and structures obtained thereby