Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
03/2008
03/25/2008US7349261 Method for increasing programming speed for non-volatile memory by applying counter-transitioning waveforms to word lines
03/25/2008US7349259 Semiconductor memory device
03/25/2008US7349257 Combination nonvolatile memory using unified technology with byte, page and block write and simultaneous read and write operations
03/25/2008US7349256 Flash memory devices and methods of programming the same by overlapping programming operations for multiple mats
03/25/2008US7349255 High data rate write process for non-volatile flash memories
03/25/2008US7349251 Integrated memory circuit arrangement
03/25/2008US7349246 Initial firing method and phase change memory device for performing firing effectively
03/25/2008US7348626 Method of making nonvolatile transistor pairs with shared control gate
03/25/2008US7348237 NOR flash memory cell with high storage density
03/25/2008US7347952 Method of fabricating an ink jet printhead
03/20/2008WO2008033679A2 Non-volatile memory and method for reduced erase/write cycling during trimming of initial programming voltage
03/20/2008WO2008033203A1 Chalcogenide semiconductor memory device with insulating dielectric
03/20/2008WO2008031547A1 Magnetically programmable eeprom
03/20/2008WO2008031217A1 Flash multi-level threshold distribution scheme
03/20/2008WO2008013926A3 Nand flash memory programming
03/20/2008WO2007139901A3 Method and apparatus for improving storage performance using a background erase
03/20/2008US20080068896 Sonos memory array with improved read disturb characteristic
03/20/2008US20080068894 Differential flash memory programming technique
03/20/2008US20080068893 Non-volatile semiconductor memory device adapted to store a multi-valued in a single memory cell
03/20/2008US20080068892 Non-volatile semiconductor memory device and method of writing data in non-volatile semiconductor memory devices
03/20/2008US20080068891 Boosting to control programming of non-volatile memory
03/20/2008US20080068890 Nand flash memory with reduced programming disturbance
03/20/2008US20080068889 Nand memory cell at initializing state and initializing process for nand memory cell
03/20/2008US20080068888 Non-Volatile Memory Devices Having Multi-Page Programming Capabilities and Related Methods of Operating Such Devices
03/20/2008US20080068887 Program methods for split-gate memory
03/20/2008US20080068886 Flash Memory Devices Having Multi-Page Copyback Functionality and Related Block Replacement Methods
03/20/2008US20080068885 Method and apparatus for programming multi level cell flash memory device
03/20/2008US20080068884 Method of controlling copy-back operation of flash memory device including multi-level cells
03/20/2008US20080068883 Flash memory devices and programming methods for the same
03/20/2008US20080068424 Ink jet printhead integrated circuit with surface-processed thermal actuators
03/20/2008DE112004002927T5 Halbleiterbauelement und Verfahren zum Beschreiben desselben Of the same semiconductor device and method for describing
03/20/2008DE102006042115A1 Schaltungsanordnung und Verfahren zum Betrieb einer Schaltungsanordnung Circuit arrangement and method for operating a circuit arrangement
03/20/2008CA2659872A1 Flash multi-level threshold distribution scheme
03/19/2008EP1901309A1 Method of fixing read evaluation time in a non volatile nand type memory device
03/19/2008EP1901308A1 Improved nand flash memory with reduced programming disturbance
03/19/2008EP1901307A2 Resistive memory having shunted memory cells
03/19/2008EP1901306A1 Nonvolatile memory performing verify processing in sequential write
03/19/2008EP1900033A2 Memory using hole trapping in high-k dielectrics
03/19/2008EP1899977A2 Method for programming a memory device
03/19/2008EP1702339B1 A software method of emulation of eeprom memory
03/19/2008EP1297531B1 Regulator design for inductive booster pump using pulse width modulation technique
03/19/2008CN101147206A Test device and test method
03/19/2008CN101147204A Tester and selector
03/19/2008CN101147201A Non-volatile semiconductor memory and its reading method, and micro-processor
03/19/2008CN101145584A Flash memory device, method of operating a flash memory device and method for manufacturing the same device
03/19/2008CN101145397A Evaluation circuit and evaluation method for the assessment of memory cell states
03/19/2008CN101145396A Method of programming a multi-bit non-volatile memory device and multi-bit non-volatile memory device
03/19/2008CN101145395A Flash memory device and program method thereof
03/19/2008CN101145394A Apparatus and method for providing atomicity with respect to request of write operation for successive sector
03/19/2008CN101145393A EEPROM erasing and writing high voltage conversion control cache suitable for low voltage data writing
03/19/2008CN101145392A Resistive memory having shunted memory cells
03/18/2008US7346730 Mobile electronic device
03/18/2008US7346712 Semiconductor integrated circuit apparatus and circuit board and information readout method
03/18/2008US7345934 Multi-state memory
03/18/2008US7345924 Programming memory devices
03/18/2008US7345923 Wordline voltage generation circuit and nonvolatile memory device with the same
03/18/2008US7345922 Position based erase verification levels in a flash memory device
03/18/2008US7345921 Method and system for a programming approach for a nonvolatile electronic device
03/18/2008US7345920 Method and apparatus for sensing in charge trapping non-volatile memory
03/18/2008US7345919 Semiconductor device that enables simultaneous read and write/read operation
03/18/2008US7345916 Method and apparatus for high voltage operation for a high performance semiconductor memory device
03/18/2008US7345915 Modified-layer EPROM cell
03/18/2008US7345913 Semiconductor memory device
03/18/2008US7345898 Complementary nonvolatile memory device
03/18/2008US7345335 Semiconductor integrated circuit, booster circuitry, and non-volatile semiconductor memory device
03/13/2008WO2008031074A1 Pseudo random and command driven bit compensation for the cycling effects in flash memory and methods therefor
03/13/2008WO2008030775A2 Programming non-volatile memory with improved boosting
03/13/2008WO2008029457A1 Nonvolatile memory
03/13/2008WO2008028401A1 Device and method for closing internal modes/functions of integrated circuit
03/13/2008WO2008005735A3 Partial page fail bit detection in flash memory devices
03/13/2008WO2007149676A3 Method for operating non-volatile memory using temperature compensation of voltages of unselected word lines and select gates
03/13/2008WO2007143399A3 Nand flash verify method with different compensated pass voltages
03/13/2008WO2007143398A3 Verify operation for non-volatile storage using different voltages
03/13/2008WO2007135632A3 Sonos memory device and method of operating a sonos memory device
03/13/2008WO2007134281A3 Two levels of voltage regulation supplied for logic and data programming voltage of a memory device
03/13/2008WO2007131059A3 Non-volatile memory with background data latch caching during erase operations and methods therefor
03/13/2008WO2007081642A3 Flash devicewith shared word lines and manufacturing methods thereof
03/13/2008US20080065823 Method of transferring data in an electrically programmable memory
03/13/2008US20080065818 Flash Storage System with Write-Erase Abort Detection Mechanism
03/13/2008US20080062770 Non-Volatile Memory With Linear Estimation of Initial Programming Voltage
03/13/2008US20080062769 Memory Device and Method Providing an Average Threshold Based Refresh
03/13/2008US20080062767 Method of fixing a read evaluation time or the difference between a read charge voltage and a read discriminating voltage in a non-volatile nand type memory device
03/13/2008US20080062765 Method for Non-Volatile Memory With Linear Estimation of Initial Programming Voltage
03/13/2008US20080062764 Nonvolatile Semiconductor Memory Device
03/13/2008US20080062763 Multi-bit flash memory device and memory cell array
03/13/2008US20080062762 NAND architecture memory with voltage sensing
03/13/2008US20080062760 Flash multi-level threshold distribution scheme
03/13/2008US20080062758 Nonvolatile semiconductor storage apparatus
03/13/2008US20080062757 Nanocrystal write once read only memory for archival storage
03/13/2008US20080062745 Hot-carrier-based nonvolatile memory utilizing differing transistor structures
03/13/2008US20080062736 Storage device
03/13/2008US20080061298 Semiconductor element and semiconductor memory device using the same
03/13/2008DE102006040570A1 Storage device has number of multi level storage cells, where each cell has number in levels, corresponding to 2n, where n is positive whole number, and another device combines levels of storage cells
03/12/2008EP1898426A2 Erasable phase-change memory, programmable using a line decoder
03/12/2008EP1898425A1 Phase-change memory comprising a low-voltage column decoder
03/12/2008EP1898424A1 Semiconductor storage apparatus
03/12/2008EP1898312A1 Memory controller, nonvolatile storage device, nonvolatile storage system, and data writing method
03/12/2008EP1548602B1 Non-volatile storage device control method
03/12/2008CN101142632A Driving of a memory matrix of resistance hysteresis elements
03/12/2008CN101142631A Control of a memory matrix with resistance hysteresis elements