Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
11/2007
11/28/2007EP1860687A2 SONOS memory device
11/28/2007EP1860686A2 Semiconductor memory device having a recess-type control gate electrode and method of fabricating the semiconductor memory device
11/28/2007EP1860662A1 Decoder circuit for use in a non-volatile semiconductor memory device
11/28/2007EP1860661A1 Floating gate memory cell reading and writing technique
11/28/2007EP1859451A2 Method of achieving wear leveling in flash memory using relative grades
11/28/2007EP1859450A1 Control of a memory matrix with resistance hysteresis elements
11/28/2007EP1859359A1 Pc-connectivity for microcontroller on-chip memory
11/28/2007EP1540660B1 Method of and apparatus for detecting an error in writing to persistent memory
11/28/2007CN200983267Y A sensitive amplifier for electrical erasable programmable ROM
11/28/2007CN101079448A Single poly, multi-bit non-volatile memory device and methods for operating the same
11/28/2007CN101079426A Structure and method of sub-gate AND architectures employing bandgap engineered SONOS devices
11/28/2007CN101079328A Parallel programming of flash memory during in-circuit test
11/28/2007CN101079324A Storage device, its life monitoring device and monitoring method
11/28/2007CN101079323A Nonvolatile semiconductor memory device capable of stably performing erase operation and method of operating the same
11/28/2007CN101079322A Multi-bit memory device and memory system
11/28/2007CN101079321A Flash memory device including a dummy cell
11/28/2007CN101079320A Non-volatile semiconductor memory device, erase method for same, and test method for same
11/28/2007CN100351950C Nonvolatile semiconductor storage apparatus
11/27/2007US7302517 Apparatus and method for controlling execute-in-place (XIP) in serial flash memory, and flash memory chip using the same
11/27/2007US7301834 Semiconductor memory
11/27/2007US7301821 Volatile data storage in a non-volatile memory cell array
11/27/2007US7301820 Non-volatile memory dynamic operations
11/27/2007US7301817 Method for programming of multi-state non-volatile memory using smart verify
11/27/2007US7301814 System and method for avoiding offset in and reducing the footprint of a non-volatile memory
11/27/2007US7301812 Boosting to control programming of non-volatile memory
11/27/2007US7301811 Cost efficient nonvolatile SRAM cell
11/27/2007US7301809 Nonvolatile semiconductor memory
11/27/2007US7301807 Writable tracking cells
11/27/2007US7301805 Pipelined programming of non-volatile memories using early data
11/27/2007US7301804 NROM memory cell, memory array, related devices and methods
11/27/2007US7301802 Circuit arrays having cells with combinations of transistors and nanotube switching elements
11/27/2007US7301794 Non-volatile memory array with simultaneous write and erase feature
11/27/2007US7301195 Semiconductor memory device for storing data as state of majority carriers accumulated in channel body and method of manufacturing the same
11/22/2007WO2007134319A2 Multi-chip package for a flash memory
11/22/2007WO2007134301A2 Iterative memory cell charging based on reference cell value
11/22/2007WO2007134281A2 Two levels of voltage regulation supplied for logic and data programming voltage of a memory device
11/22/2007WO2007134253A2 Use of alternative value in cell detection
11/22/2007WO2007134247A2 Dynamic cell bit resolution
11/22/2007WO2007134244A2 Use of 8-bit or higher a/d for nand cell value
11/22/2007WO2007133963A2 Nonvolatile memory with convolutional coding for error correction
11/22/2007WO2007116393A3 Method for generating soft bits in flash memories
11/22/2007WO2007112201A3 Non-volatile memory and method with redundancy data buffered in data latches for defective locations
11/22/2007WO2007024565A3 Nonvolatile memory cell programming
11/22/2007US20070268775 NAND system with a data write frequency greater than a command-and-address-load frequency
11/22/2007US20070268774 High voltage transfer circuit and row decoder circuit comprising a high voltage transfer circuit
11/22/2007US20070268754 Recycling Partially-Stale Flash Blocks Using a Sliding Window for Multi-Level-Cell (MLC) Flash Memory
11/22/2007US20070268751 Flash memory device and related high voltage generating circuit
11/22/2007US20070268750 Semiconductor memory device
11/22/2007US20070268749 Method for operating non-volatile memory device
11/22/2007US20070268748 Multi-bit flash memory devices having a single latch structure and related programming methods, systems and memory cards
11/22/2007US20070268744 Memory system with switch element
11/22/2007DE112005003277T5 Fühlerverstärker mit großem Spannungshub Sense amplifier with a large voltage swing
11/22/2007DE10042388B4 Nichtflüchtiger ferroelektrischer Speicher Non-volatile ferroelectric memory
11/21/2007EP1858027A1 A sensing circuit for semiconductor memories
11/21/2007EP1858023A1 Storage device with a non-volatile storage matrix
11/21/2007EP1858021A2 Phase change memory having temperature budget sensor
11/21/2007EP1856616A2 Scheduling of housekeeping operations in flash memory systems
11/21/2007EP1317756B1 Compressed event counting technique and application to a flash memory system
11/21/2007CN101075643A Nonvolatile memory unit and method for operating the same
11/21/2007CN101075630A Phase change memory device and manufacturing method
11/21/2007CN101075480A Nonvolatile memory structure used dipole programmable resistance storing unit
11/21/2007CN100350614C Electrodes for RRAM memory cells
11/21/2007CN100350612C Non-volatile memory cell and fabrication method thereof
11/21/2007CN100350507C Semiconductor stroage device
11/21/2007CN100350506C Data erasing method for non volatile semiconductor storage
11/21/2007CN100350505C Clock generator for memory apparatus
11/21/2007CN100350504C Boosted circuit for semiconductor device
11/21/2007CN100350503C Method for reducing coupling effect between nonvolatile memory storage cell
11/21/2007CN100350500C Ferroelectric memory device and its programming method
11/21/2007CN100350442C Display driver, display device, and portable electronic apparatus
11/21/2007CN100350393C Semiconductor memory devices
11/20/2007US7299314 Flash storage system with write/erase abort detection mechanism
11/20/2007US7299098 Method and device for programming a control unit
11/20/2007US7298670 Integrated circuit with analog or multilevel storage cells and user-selectable sampling frequency
11/20/2007US7298655 Isolation control circuit and method for a memory device
11/20/2007US7298652 Non-volatile memory and semiconductor device
11/20/2007US7298650 Page buffer for a programmable memory device
11/20/2007US7298648 Page buffer and multi-state nonvolatile memory device including the same
11/20/2007US7298647 Operating techniques for reducing program and read disturbs of a non-volatile memory
11/20/2007US7298641 Configurable storage device
11/20/2007US7298638 Operating an electronic device having a vertical gain cell that includes vertical MOS transistors
11/20/2007US7296754 IC card module
11/16/2007CA2588858A1 System and method for efficient uncorrectable error detection in flash memory
11/15/2007WO2007131127A2 Merging queued memory operation in a non-volatile memory
11/15/2007WO2007131059A2 Non-volatile memory with background data latch caching during erase operations and methods therefor
11/15/2007WO2007131024A1 Methods and apparatus for providing a read access control system associated with a flash device
11/15/2007WO2007130976A2 Non-volatile memory with background data latch caching during program operations and methods therefor
11/15/2007WO2007130832A2 Boosting voltage technique fpr programming nand flash memory devices
11/15/2007WO2007130556A2 Mimicking program verify drain resistance in a memory device
11/15/2007WO2007128653A1 Memory device
11/15/2007WO2007128632A1 Non-volatile memory module
11/15/2007WO2007128116A1 Removable card bridge for a storage card or memory card
11/15/2007WO2007112202A3 Non-volatile memory and method with redundancy data buffered in remote buffer circuits
11/15/2007WO2007076503A3 Non-volatile memory operated on. the basis of a two-step bit-line precharge operation and a two-pass sensing operation
11/15/2007US20070266201 Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
11/15/2007US20070263457 Flash memory device and erase method thereof
11/15/2007US20070263456 Inverter non-volatile memory cell and array system
11/15/2007US20070263455 Iterative Memory Cell Charging Based on Reference Cell Value
11/15/2007US20070263454 Maintenance Operations for Multi-Level Data Storage Cells
11/15/2007US20070263450 Non-Volatile Memory and Method with Shared Processing for an Aggregate of Read/Write Circuits
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