Patents for G11C 16 - Erasable programmable read-only memories (44,373) |
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06/11/2008 | EP1606820B1 Sense amplifier systems and a matrix-addressable memory device provided therewith |
06/11/2008 | CN101199025A Selective slow programming convergence in a flash memory device |
06/11/2008 | CN101199024A Erasing non-volatile memory utilizing changing word line conditions to compensate for slower frasing memory cells |
06/11/2008 | CN101199022A Compensating for coupling in non-volatile storage |
06/11/2008 | CN101197196A Method for detecting electrical property of flash memory unit |
06/11/2008 | CN101197192A Writing circuit and method for flash memory |
06/11/2008 | CN101197191A Memory card and its initial setting method |
06/11/2008 | CN101197190A Program method for multi-level non-volatile memory device |
06/11/2008 | CN101197189A Flash memory devices and programming methods for the same |
06/11/2008 | CN101197187A Memory that limits power consumption |
06/11/2008 | CN101197185A Prerecording three-dimensional memory module and its broadcasting system |
06/11/2008 | CN100394603C 相变存储装置 Phase change memory device |
06/11/2008 | CN100394512C Rrogrammable switch and integrate circuit |
06/11/2008 | CN100394511C Memory device |
06/11/2008 | CN100394408C Electric voltage lower-frequency interference detection apparatus and method |
06/10/2008 | US7386869 Broadcast and reception systems, and receiver/decoder and remote controller therefor |
06/10/2008 | US7386657 Random access interface in a serial memory device |
06/10/2008 | US7385869 Microcomputer and microprocessor having flash memory operable from single external power supply |
06/10/2008 | US7385868 Method of refreshing a PCRAM memory device |
06/10/2008 | US7385856 Non-volatile memory device and inspection method for non-volatile memory device |
06/10/2008 | US7385855 Nonvolatile memory device having self reprogramming function |
06/10/2008 | US7385854 Selective operation of a multi-state non-volatile memory system in a binary mode |
06/10/2008 | US7385851 Repetitive erase verify technique for flash memory devices |
06/10/2008 | US7385847 Semiconductor device |
06/10/2008 | US7385846 Reduction of adjacent floating gate data pattern sensitivity |
06/10/2008 | US7385845 Composite storage circuit and semiconductor device having the same |
06/10/2008 | US7385844 Semiconductor device and method of controlling the same |
06/10/2008 | US7385843 Multi-state memory |
06/10/2008 | US7385838 Semiconductor device with a non-erasable memory and/or a nonvolatile memory |
06/05/2008 | WO2008067185A1 Segmented bitscan for verification of programming |
06/05/2008 | WO2008066058A1 Memory system |
06/05/2008 | WO2008065841A1 Self-stop circuit using nonvolatile storage element charge amount as timer |
06/05/2008 | WO2008064480A1 Flash memory program inhibit scheme |
06/05/2008 | WO2008064466A1 Non-volatile memory serial core architecture |
06/05/2008 | WO2008048810A3 Partitioned soft programming in non-volatile memory |
06/05/2008 | WO2008039667A3 Reducing program disturb in non-volatile storage |
06/05/2008 | WO2007131127A8 Merging queued memory operation in a non-volatile memory |
06/05/2008 | US20080130373 Programming memory devices |
06/05/2008 | US20080130371 Method and apparatus for high voltage operation for a high performance semiconductor memory device |
06/05/2008 | US20080130370 Method for increasing programming speed for non-volatile memory by applying direct-transitioning waveforms to word lines |
06/05/2008 | US20080130369 Semiconductor memory device |
06/05/2008 | US20080130368 Starting program voltage shift with cycling of non-volatile memory |
06/05/2008 | US20080130367 Byte-Erasable Nonvolatile Memory Devices |
06/05/2008 | US20080130365 Bitline selection circuitry for nonvolatile memories |
06/05/2008 | US20080130364 Novel Multi-State Memory |
06/05/2008 | US20080130363 Semiconductor memory device and method for erasing the same |
06/05/2008 | US20080130362 Method For Reducing Charge Loss In Analog Floating Gate Cell |
06/05/2008 | US20080130361 Circuit and method for generating a reference voltage in memory devices having a non-volatile cell matrix |
06/05/2008 | US20080130360 Flash memory program inhibit scheme |
06/05/2008 | US20080130359 Multiple use memory chip |
06/05/2008 | US20080129256 Voltage regulator made of high voltage transistors |
06/05/2008 | DE102007056387A1 Flash-Speicherelement und Verfahren zum Programmieren eines Flash-Speicherelements Flash memory device and method of programming a flash memory device |
06/05/2008 | DE102007056129A1 Flashspeicherelement und Smart-Card Flash memory device and smart card |
06/05/2008 | DE102007055541A1 Memory device e.g. RAM device, for use in chip, has evaluation circuit for amplifying signal resulting from reading of memory cell, and precharging device provided to precharge output of evaluation circuit to predetermined voltage level |
06/05/2008 | DE102007051192A1 Speichervorrichtung, die Drei-Pegel-Zellen einsetzt, und zugehöriges Verfahren zum Verwalten Memory device employing tri-level cells, and associated method for managing |
06/05/2008 | DE102004032707B4 Datenträger und Verfahren zum Testen eines Datenträgers Data carriers and method for testing a data carrier |
06/05/2008 | DE10014272B4 Feldgerät, sowie Verfahren zum Umprogrammieren eines Feldgerätes Field device and method of reprogramming a field device |
06/05/2008 | CA2664851A1 Flash memory program inhibit scheme |
06/05/2008 | CA2663414A1 Non-volatile memory serial core architecture |
06/04/2008 | EP1927993A2 Time-switch-carrying removable storage and semiconductor integrated circuit |
06/04/2008 | EP1927992A1 Memory cell with trigger element |
06/04/2008 | EP1927990A2 Resistive memory including selective refresh operation |
06/04/2008 | EP1927989A1 Editing apparatus and editing method |
06/04/2008 | EP1927870A2 Portable data carrier |
06/04/2008 | EP1927115A2 High performance flash memory device using a programming window for predetermination of bits to be programmed and dc-to-dc converter |
06/04/2008 | EP1927114A2 Multi-bit flash memory device having improved program rate |
06/04/2008 | EP1927113A1 Flash memory programming using an indication bit to interpret state |
06/04/2008 | EP1927112A1 Non-volatile programmable memory cell for programmable logic array |
06/04/2008 | EP1620859B1 Reference current generator, and method of programming, adjusting and/or operating same |
06/04/2008 | CN101194323A Selective application of program inhibit schemes in non-volatile memory |
06/04/2008 | CN101194322A Compensating for coupling during read operations on non-volatile memory |
06/04/2008 | CN101194319A Configuration finalization on first valid NAND command |
06/04/2008 | CN101192649A Storage node including diffusion barrier layer, phase change memory device having the same and methods of manufacturing the same |
06/04/2008 | CN101192449A Method and apparatus for trimming reference voltage of flash memory device |
06/04/2008 | CN100392765C Secure writing of data |
06/04/2008 | CN100392764C Television data storage method |
06/04/2008 | CN100392763C Boosting circuit with boosted voltage limited |
06/04/2008 | CN100392759C Nonvolatile memory and method for setting source-line voltage and bit-line voltage |
06/04/2008 | CN100392758C Nonvolatile semiconductor storage apparatus |
06/04/2008 | CN100392756C Method anc circuit for writting storage unit |
06/04/2008 | CN100392619C Method for controlling flash memory access time, access system of flash memory and flash memory controller |
06/04/2008 | CN100392590C Method and device for modifying software in a control unit and corresponding control unit |
06/03/2008 | US7383445 Semiconductor storage device |
06/03/2008 | US7382662 Twin insulator charge storage device operation and its fabrication method |
06/03/2008 | US7382661 Semiconductor memory device having improved programming circuit and method of programming same |
06/03/2008 | US7382660 Method for accessing a multilevel nonvolatile memory device of the flash NAND type |
06/03/2008 | US7382657 Semiconductor memory device having bit line precharge circuit controlled by address decoded signals |
06/03/2008 | US7382655 Access time adjusting circuit and method for non-volatile memory |
06/03/2008 | US7382652 NAND flash memory and blank page search method therefor |
06/03/2008 | US7382651 Nonvolatile semiconductor memory device |
06/03/2008 | US7382650 Method and apparatus for sector erase operation in a flash memory array |
06/03/2008 | US7382649 Nonvolatile semiconductor memory |
06/03/2008 | US7382646 Memory architecture containing a high density memory array of semi-volatile or non-volatile memory elements |
06/03/2008 | US7381611 Multilayered phase change memory |
06/03/2008 | CA2284018C Extracting data sections from a transmitted data stream |
05/29/2008 | WO2008063970A2 Operation nand non-volatile memory with boost electrodes |
05/29/2008 | WO2008063262A2 Securing a flash memory block in a secure device system and method |
05/29/2008 | WO2008027279A3 Bottom electrode geometry for phase change memory |
05/29/2008 | WO2008027278A3 Phase change memory with bi-layer bottom electrode |
05/29/2008 | WO2008008466A3 Current sensing for flash |