Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
06/2008
06/11/2008EP1606820B1 Sense amplifier systems and a matrix-addressable memory device provided therewith
06/11/2008CN101199025A Selective slow programming convergence in a flash memory device
06/11/2008CN101199024A Erasing non-volatile memory utilizing changing word line conditions to compensate for slower frasing memory cells
06/11/2008CN101199022A Compensating for coupling in non-volatile storage
06/11/2008CN101197196A Method for detecting electrical property of flash memory unit
06/11/2008CN101197192A Writing circuit and method for flash memory
06/11/2008CN101197191A Memory card and its initial setting method
06/11/2008CN101197190A Program method for multi-level non-volatile memory device
06/11/2008CN101197189A Flash memory devices and programming methods for the same
06/11/2008CN101197187A Memory that limits power consumption
06/11/2008CN101197185A Prerecording three-dimensional memory module and its broadcasting system
06/11/2008CN100394603C 相变存储装置 Phase change memory device
06/11/2008CN100394512C Rrogrammable switch and integrate circuit
06/11/2008CN100394511C Memory device
06/11/2008CN100394408C Electric voltage lower-frequency interference detection apparatus and method
06/10/2008US7386869 Broadcast and reception systems, and receiver/decoder and remote controller therefor
06/10/2008US7386657 Random access interface in a serial memory device
06/10/2008US7385869 Microcomputer and microprocessor having flash memory operable from single external power supply
06/10/2008US7385868 Method of refreshing a PCRAM memory device
06/10/2008US7385856 Non-volatile memory device and inspection method for non-volatile memory device
06/10/2008US7385855 Nonvolatile memory device having self reprogramming function
06/10/2008US7385854 Selective operation of a multi-state non-volatile memory system in a binary mode
06/10/2008US7385851 Repetitive erase verify technique for flash memory devices
06/10/2008US7385847 Semiconductor device
06/10/2008US7385846 Reduction of adjacent floating gate data pattern sensitivity
06/10/2008US7385845 Composite storage circuit and semiconductor device having the same
06/10/2008US7385844 Semiconductor device and method of controlling the same
06/10/2008US7385843 Multi-state memory
06/10/2008US7385838 Semiconductor device with a non-erasable memory and/or a nonvolatile memory
06/05/2008WO2008067185A1 Segmented bitscan for verification of programming
06/05/2008WO2008066058A1 Memory system
06/05/2008WO2008065841A1 Self-stop circuit using nonvolatile storage element charge amount as timer
06/05/2008WO2008064480A1 Flash memory program inhibit scheme
06/05/2008WO2008064466A1 Non-volatile memory serial core architecture
06/05/2008WO2008048810A3 Partitioned soft programming in non-volatile memory
06/05/2008WO2008039667A3 Reducing program disturb in non-volatile storage
06/05/2008WO2007131127A8 Merging queued memory operation in a non-volatile memory
06/05/2008US20080130373 Programming memory devices
06/05/2008US20080130371 Method and apparatus for high voltage operation for a high performance semiconductor memory device
06/05/2008US20080130370 Method for increasing programming speed for non-volatile memory by applying direct-transitioning waveforms to word lines
06/05/2008US20080130369 Semiconductor memory device
06/05/2008US20080130368 Starting program voltage shift with cycling of non-volatile memory
06/05/2008US20080130367 Byte-Erasable Nonvolatile Memory Devices
06/05/2008US20080130365 Bitline selection circuitry for nonvolatile memories
06/05/2008US20080130364 Novel Multi-State Memory
06/05/2008US20080130363 Semiconductor memory device and method for erasing the same
06/05/2008US20080130362 Method For Reducing Charge Loss In Analog Floating Gate Cell
06/05/2008US20080130361 Circuit and method for generating a reference voltage in memory devices having a non-volatile cell matrix
06/05/2008US20080130360 Flash memory program inhibit scheme
06/05/2008US20080130359 Multiple use memory chip
06/05/2008US20080129256 Voltage regulator made of high voltage transistors
06/05/2008DE102007056387A1 Flash-Speicherelement und Verfahren zum Programmieren eines Flash-Speicherelements Flash memory device and method of programming a flash memory device
06/05/2008DE102007056129A1 Flashspeicherelement und Smart-Card Flash memory device and smart card
06/05/2008DE102007055541A1 Memory device e.g. RAM device, for use in chip, has evaluation circuit for amplifying signal resulting from reading of memory cell, and precharging device provided to precharge output of evaluation circuit to predetermined voltage level
06/05/2008DE102007051192A1 Speichervorrichtung, die Drei-Pegel-Zellen einsetzt, und zugehöriges Verfahren zum Verwalten Memory device employing tri-level cells, and associated method for managing
06/05/2008DE102004032707B4 Datenträger und Verfahren zum Testen eines Datenträgers Data carriers and method for testing a data carrier
06/05/2008DE10014272B4 Feldgerät, sowie Verfahren zum Umprogrammieren eines Feldgerätes Field device and method of reprogramming a field device
06/05/2008CA2664851A1 Flash memory program inhibit scheme
06/05/2008CA2663414A1 Non-volatile memory serial core architecture
06/04/2008EP1927993A2 Time-switch-carrying removable storage and semiconductor integrated circuit
06/04/2008EP1927992A1 Memory cell with trigger element
06/04/2008EP1927990A2 Resistive memory including selective refresh operation
06/04/2008EP1927989A1 Editing apparatus and editing method
06/04/2008EP1927870A2 Portable data carrier
06/04/2008EP1927115A2 High performance flash memory device using a programming window for predetermination of bits to be programmed and dc-to-dc converter
06/04/2008EP1927114A2 Multi-bit flash memory device having improved program rate
06/04/2008EP1927113A1 Flash memory programming using an indication bit to interpret state
06/04/2008EP1927112A1 Non-volatile programmable memory cell for programmable logic array
06/04/2008EP1620859B1 Reference current generator, and method of programming, adjusting and/or operating same
06/04/2008CN101194323A Selective application of program inhibit schemes in non-volatile memory
06/04/2008CN101194322A Compensating for coupling during read operations on non-volatile memory
06/04/2008CN101194319A Configuration finalization on first valid NAND command
06/04/2008CN101192649A Storage node including diffusion barrier layer, phase change memory device having the same and methods of manufacturing the same
06/04/2008CN101192449A Method and apparatus for trimming reference voltage of flash memory device
06/04/2008CN100392765C Secure writing of data
06/04/2008CN100392764C Television data storage method
06/04/2008CN100392763C Boosting circuit with boosted voltage limited
06/04/2008CN100392759C Nonvolatile memory and method for setting source-line voltage and bit-line voltage
06/04/2008CN100392758C Nonvolatile semiconductor storage apparatus
06/04/2008CN100392756C Method anc circuit for writting storage unit
06/04/2008CN100392619C Method for controlling flash memory access time, access system of flash memory and flash memory controller
06/04/2008CN100392590C Method and device for modifying software in a control unit and corresponding control unit
06/03/2008US7383445 Semiconductor storage device
06/03/2008US7382662 Twin insulator charge storage device operation and its fabrication method
06/03/2008US7382661 Semiconductor memory device having improved programming circuit and method of programming same
06/03/2008US7382660 Method for accessing a multilevel nonvolatile memory device of the flash NAND type
06/03/2008US7382657 Semiconductor memory device having bit line precharge circuit controlled by address decoded signals
06/03/2008US7382655 Access time adjusting circuit and method for non-volatile memory
06/03/2008US7382652 NAND flash memory and blank page search method therefor
06/03/2008US7382651 Nonvolatile semiconductor memory device
06/03/2008US7382650 Method and apparatus for sector erase operation in a flash memory array
06/03/2008US7382649 Nonvolatile semiconductor memory
06/03/2008US7382646 Memory architecture containing a high density memory array of semi-volatile or non-volatile memory elements
06/03/2008US7381611 Multilayered phase change memory
06/03/2008CA2284018C Extracting data sections from a transmitted data stream
05/2008
05/29/2008WO2008063970A2 Operation nand non-volatile memory with boost electrodes
05/29/2008WO2008063262A2 Securing a flash memory block in a secure device system and method
05/29/2008WO2008027279A3 Bottom electrode geometry for phase change memory
05/29/2008WO2008027278A3 Phase change memory with bi-layer bottom electrode
05/29/2008WO2008008466A3 Current sensing for flash