Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
02/2008
02/05/2008US7327611 Method and apparatus for operating charge trapping nonvolatile memory
02/05/2008US7327609 Methods of program-verifying a multi-bit nonvolatile memory device and circuit thereof
02/05/2008US7327608 Program time adjustment as function of program voltage for improved programming speed in programming method
02/05/2008US7327606 Flash memory device and method of programming the same
02/05/2008US7327605 High bandwidth datapath load and test of multi-level memory cells
02/05/2008US7327601 Providing a reference voltage to a cross point memory array
02/05/2008US7326992 Nonvolatile memory cell with multiple floating gates formed after the select gate
02/05/2008US7326991 Nonvolatile semiconductor memory and method of operating the same
02/05/2008US7326616 Semiconductor integrated circuit device and a method of manufacturing the same
02/05/2008US7326614 Self aligned method of forming a semiconductor memory array of floating gate memory cells with buried bit-line and raised source line, and a memory array made thereby
01/2008
01/31/2008WO2008013926A2 Nand flash memory programming
01/31/2008WO2008012464A2 Eeprom charge retention circuit for time measurement
01/31/2008WO2008012342A1 Phase change memory device
01/31/2008WO2007030399A3 Method and apparatus for programming/erasing a non-volatile memory
01/31/2008US20080028134 Data line disturbance free memory block divided flash memory and microcomputer having flash memory therein
01/31/2008US20080028133 Flash memory system and data writing method thereof
01/31/2008US20080026535 Phase-changeable memory device and method of manufacturing the same
01/31/2008US20080025107 Semiconductor device
01/31/2008US20080025102 Method for memory data storage by partition into narrower threshold voltage distribution regions
01/31/2008US20080025099 Non-Volatile Memory And Control With Improved Partial Page Program Capability
01/31/2008US20080025098 Method of programming a nonvolatile memory device using hybrid local boosting
01/31/2008US20080025097 Nand flash memory programming
01/31/2008US20080025095 Flash memory device and program method thereof
01/31/2008US20080025094 Method for using a hierarchical bit line bias bus for block selectable memory array
01/31/2008US20080025093 Hierarchical bit line bias bus for block selectable memory array
01/31/2008US20080025090 Page buffer and multi-state nonvolatile memory device including the same
01/31/2008US20080025089 Method for reading a multi-level passive element memory cell array
01/31/2008US20080025088 Apparatus for reading a multi-level passive element memory cell array
01/31/2008US20080025087 Method for fabricating charge-trapping memory
01/31/2008US20080025086 Memory device and operating method thereof
01/31/2008US20080025085 Memory array incorporating two data busses for memory array block selection
01/31/2008US20080024202 High voltage generating circuit preserving charge pumping efficiency
01/31/2008US20080024201 High voltage generating circuit preserving charge pumping efficiency
01/31/2008US20080024200 High voltage generating circuit preserving charge pumping efficiency
01/31/2008DE102006038077A1 Solid electrolyte storage cell comprises cathode, anode and solid electrolytes, where anode has intercalation material and metal species, which are unfixed in intercalation material
01/31/2008DE10053962B4 Nichtflüchtiger ferroelektrischer Speicher und Verfahren zu seiner Herstellung A non-volatile ferroelectric memory and method for its preparation
01/30/2008EP1883113A1 Phase change memory device
01/30/2008EP1883076A1 Method of programming cells of a NAND memory device
01/30/2008EP1883074A1 Read disturb sensor for phase change memories
01/30/2008EP1882256A1 Flash programming via lf communication
01/30/2008CN101116194A Pillar phase change memory cell
01/30/2008CN101114654A Non-volatile memory device and methods of operating and fabricating the same
01/30/2008CN101114524A Step-up booster circuit
01/30/2008CN101114523A Flash memory section and method for erasing flash memory cluster
01/30/2008CN101114522A Non-volatile memory device and method of handling a datum read from a memory cell
01/30/2008CN101114521A Power consumption controlling method and system of flash memory
01/30/2008CN101114520A Non-volatile memory device having pass transistors and method of operating the same
01/30/2008CN100365815C Non-volatile memory and method for manufacturing same
01/30/2008CN100365789C Method and apparatus for testing defective portion of semiconductor device
01/30/2008CN100365768C Flash memory with ultra thin vertical body transistors
01/30/2008CN100365735C Soft program and soft program verify of core ctlls in flash memory array
01/30/2008CN100365538C USB interface memory card
01/29/2008US7325114 Selectable block protection for non-volatile memory
01/29/2008US7325090 Refreshing data stored in a flash memory
01/29/2008US7325089 Controller for refreshing memories
01/29/2008US7325087 Using a processor to program a semiconductor memory
01/29/2008US7324397 Semiconductor integrated circuit
01/29/2008US7324393 Method for compensated sensing in non-volatile memory
01/29/2008US7324387 Low power high density random access memory flash cells and arrays
01/29/2008US7324386 Reliable method for erasing a flash memory
01/29/2008US7324384 Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout
01/29/2008US7324383 Selective slow programming convergence in a flash memory device
01/29/2008US7324382 Current-mode sensing structure used in high-density multiple-port register in logic processing and method for the same
01/29/2008US7324381 Low power multiple bit sense amplifier
01/29/2008US7324380 Method for trimming the temperature coefficient of a floating gate voltage reference
01/29/2008US7324379 Memory device and method of operating the same with high rejection of the noise on the high-voltage supply line
01/29/2008US7324377 Apparatus and method for programming and erasing virtual ground EEPROM without disturbing adjacent cells
01/29/2008US7324376 Method and apparatus for operating nonvolatile memory cells in a series arrangement
01/29/2008US7324374 Memory with a core-based virtual ground and dynamic reference sensing scheme
01/29/2008US7324372 Storage device
01/29/2008US7324371 Method of writing to a phase change memory device
01/29/2008US7323742 Non-volatile memory integrated circuit
01/29/2008US7323741 Semiconductor nonvolatile memory device
01/24/2008WO2008011440A2 Floating gate memory with compensating for coupling during programming
01/24/2008WO2008010258A1 Nonvolatile storage device and its erase control method
01/24/2008US20080020527 Non-volatile memory cell having a silicon-oxide-nitride-oxide-silicon gate structure and fabrication method of such cell
01/24/2008US20080019191 Nonvolatile memory and method of driving the same
01/24/2008US20080019190 Nonvolatile Semiconductor Memory
01/24/2008US20080019189 Method of High-Performance Flash Memory Data Transfer
01/24/2008US20080019187 Memory device and method for verifying information stored in memory cells
01/24/2008US20080019186 System that compensates for coupling during programming
01/24/2008US20080019184 Semiconductor memory device
01/24/2008US20080019183 Method of Programming Flash Memory Device
01/24/2008US20080019181 Multi-level operation in nitride storage memory cell
01/24/2008US20080019180 Selective Program Voltage Ramp Rates in Non-Volatile Memory
01/24/2008US20080019179 Semiconductor memory device using only single-channel transistor to apply voltage to selected word line
01/24/2008US20080019178 Electronic device including a memory array and conductive lines
01/24/2008US20080019177 Data encoding approach for implementing robust non-volatile memories
01/24/2008US20080019176 Nonvolatile semiconductor memory device for writing multivalued data
01/24/2008US20080019175 System that compensates for coupling based on sensing a neighbor using coupling
01/24/2008US20080019174 Method for configuring compensation
01/24/2008US20080019173 System for configuring compensation
01/24/2008US20080017888 Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
01/24/2008DE102007031278A1 Non-volatile memory device e.g. NOR-type flash memory device for e.g. code memory storage, has memory cell strings including word lines with dummy word line between even number of memory cell word lines and ground select line
01/24/2008DE102006044853A1 Speichereinrichtung und Verfahren, um Information in Speicherzellen zu verifizieren To verify memory device and method information in memory cells
01/23/2008EP1881588A1 Charge pump architecture and corresponding method for managing the voltage generation
01/23/2008EP1881504A2 Programming non-volatile memory
01/23/2008EP1881503A1 Method and storage switching device for operating a resistance storage cell
01/23/2008EP1880391A1 Selective application of program inhibit schemes in non-volatile memory
01/23/2008EP1880389A2 Nonvolatile memory cell comprising a diode and a resistance-switching material