Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
04/2008
04/03/2008US20080080269 Semiconductor memory device having a plurality of chips and capability of outputting a busy signal
04/03/2008US20080080260 Page buffer circuit of memory device and program method
04/03/2008US20080080258 Flash memory device and erase method thereof
04/03/2008US20080080257 Flash memory device and its reading method
04/03/2008US20080080256 Delay circuit for controlling a pre-charging time of bit lines of a memory cell array
04/03/2008US20080080255 Dual Voltage Flash Memory Card
04/03/2008US20080080254 Dual Voltage Flash Memory Methods
04/03/2008US20080080253 High-speed verifiable semiconductor memory device
04/03/2008US20080080252 Methods of programming a memory cell and memory cell arrangements
04/03/2008US20080080251 Method of reading dual-bit memory cell
04/03/2008US20080080248 Cell operation methods using gate-injection for floating gate nand flash memory
04/03/2008US20080080247 Low voltage low capacitance flash memory array
04/03/2008US20080080246 Flash memory device which includes strapping line connected to selection line
04/03/2008US20080080243 Semiconductor memory device
04/03/2008US20080080242 Flash memory device and erase method using the same
04/03/2008US20080080241 Method for recycling flash memory
04/03/2008US20080080240 Memory devices and memory systems having the same
04/03/2008US20080080239 Nonvolatile semiconductor memory device
04/03/2008US20080080238 Method of programming a semiconductor nonvolatile memory cell and memory with multiple charge traps
04/03/2008US20080080235 Power line compensation for flash memory sense amplifiers
04/03/2008DE102007046006A1 Unique programmable memory array i.e. flash memory array, has source connected with read bit line for providing voltage to region of control transistor during reading of transistor with floating gate
04/03/2008DE102006048877B3 Method for forming semiconductor memory device e.g. not-and (NAND) type flash memory device involves filling interspaces with planarizing layer of dielectric material, and removing remaining portions of sacrificial layer
04/03/2008DE102006048588A1 Memory system has two resistive memory cell fields, in which former resistive memory cell field is formed by number of resistive memory cells for storing data with two different data storage speed
04/03/2008DE102006022072B4 Electronic circuit arrangement has two evaluation circuits that assess two stored analog electrical quantities of memory cells and provide assessment result in digitized form
04/03/2008DE10037037B4 Erfassungszeit-Steuervorrichtung und -Verfahren Detection timing control device and method
04/02/2008EP1906413A1 A secure non-volatile memory device and a method of protecting data therein
04/02/2008EP1906412A1 A secure non-volatile memory device and a method of protecting data therein
04/02/2008EP1906411A1 Method of programming a phase change memory device
04/02/2008EP1905043A2 Memory architecture with enhanced over-erase tolerant control gate scheme
04/02/2008EP1905041A1 Negative voltage discharge scheme to improve snapback in a non-volatile memory
04/02/2008CN101156129A Method and system for storing logical data blocks into flash-blocks in multiple non-volatile memories which are connected to at least one common data i/o bus
04/02/2008CN101154465A Nonvolatile semiconductor memory device
04/02/2008CN101154464A Semiconductor device including a high voltage generation circuit and method of generating a high voltage
04/02/2008CN101154463A Semiconductor device including a high voltage generation circuit and method of generating a high voltage
04/02/2008CN101154462A Voltage generator in a flash memory device
04/02/2008CN101154461A Nonvolatile semiconductor memory device
04/02/2008CN101154460A Decoding method in an nrom flash memory array
04/02/2008CN101154459A Nonvolatile semiconductor memory device
04/02/2008CN101154458A Multi-block memory device erasing methods and related memory devices
04/02/2008CN101154457A Flash memory device and method of erasing memory cell block in the same
04/02/2008CN101154456A Flash memory device and erase method using the same
04/02/2008CN101154455A Memory device and method thereof
04/02/2008CN101154454A Flash memory device and its erasing method
04/02/2008CN101154453A Method of programming a multi level cell
04/02/2008CN101154452A Flash memory device and program method
04/02/2008CN101154451A Method for programming fast flash memory device
04/02/2008CN101154450A A method for programming a nand flash memory device
04/02/2008CN101154449A Flash memory device and its reading method
04/02/2008CN101154448A Page buffer circuit of memory device and program method
04/02/2008CN101154447A Flash memory and its control method
04/02/2008CN101154446A Flash memory device which includes strapping line connected to selection line
04/02/2008CN101154445A Non-volatile memory device adapted to reduce coupling effect between storage elements and related methods
04/02/2008CN101154443A Writing and reading method for NAND type flash memory element and page buffer performing the same
04/02/2008CN100379028C Electronic circuit, system, nonvolatile memory and operating method thereof
04/02/2008CN100379027C Localized split floating gate device with suppressed second bit effect and manufacturing method thereof
04/02/2008CN100379004C Flash memory cell and fabrication method
04/02/2008CN100379001C Trap read only non-volatile memory (TROM)
04/02/2008CN100378869C Flash memory programmed verifying method
04/01/2008US7353424 Storage device, data processing system and data writing and readout method
04/01/2008US7353325 Wear leveling techniques for flash EEPROM systems
04/01/2008US7353324 Semiconductor storage device and method of controlling the same
04/01/2008US7353323 Method, system, and computer-readable medium for updating memory devices in a computer system
04/01/2008US7352643 Regulating voltages for refresh operation using flash trim bits in semiconductor memory devices
04/01/2008US7352632 Non-volatile semiconductor memory device
04/01/2008US7352629 Systems for continued verification in non-volatile memory write operations
04/01/2008US7352628 Systems for programming differently sized margins and sensing with compensations at select states for improved read operations in a non-volatile memory
04/01/2008US7352627 Method, system, and circuit for operating a non-volatile memory array
04/01/2008US7352624 Reduction of adjacent floating gate data pattern sensitivity
04/01/2008US7352622 Data arrangement and data arranging method in storage device
04/01/2008US7352621 Method for enhanced block management
04/01/2008US7352620 Non-volatile semiconductor device and method for automatically recovering erase failure in the device
04/01/2008US7352619 Electronic memory with binary storage elements
04/01/2008US7352035 Flash memory devices and methods for fabricating flash memory devices
04/01/2008US7352024 Semiconductor storage device and semiconductor integrated circuit
04/01/2008US7351631 Flash memories and methods of fabricating the same
03/2008
03/27/2008WO2008011440A3 Floating gate memory with compensating for coupling during programming
03/27/2008WO2007134316A3 Off-die charge pump that supplies multiple flash devices
03/27/2008WO2007134244A3 Use of 8-bit or higher a/d for nand cell value
03/27/2008WO2007130556A3 Mimicking program verify drain resistance in a memory device
03/27/2008WO2007112213A3 Program time adjustment as function of program voltage for improved programming speed
03/27/2008US20080074941 Semiconductor Device, Nonvolatile Semiconductor Memory, System Including A Plurality Of Semiconductor Devices Or Nonvolatile Semiconductor Memories, Electric Card Including Semiconductor Device Or Nonvolatile Semiconductor Memory, And Electric Device With Which This Electric Card Can Be Used
03/27/2008US20080074931 Multi-block memory device erasing methods and related memory devices
03/27/2008US20080074927 Memory array having an interconnect and method of manufacture
03/27/2008US20080074925 Nonvolatile memory device including circuit formed of thin film transistors
03/27/2008US20080074922 2-transistor nonvolatile memory cell
03/27/2008DE102007039844A1 Flashspeicherelement und Speichersystem Flash memory device and memory system
03/27/2008DE102004045903B4 Schaltungsanordnung und Verfahren zum Schalten von Hochspannungssignalen mit Niederspannungssignalen Circuit arrangement and method for the switching of high-voltage signals with low voltage signals
03/26/2008EP1903602A2 Non-volatile memory transistor
03/26/2008EP1903601A2 Electronic timer comprising floating-gate transistors and method of initialising thereof
03/26/2008CN101151734A Split gate multi-bit memory cell
03/26/2008CN101151678A Use of data latches in multi-phase programming of non-volatile memories
03/26/2008CN101150133A Transistor nonvolatile memory cell and its related memory array
03/26/2008CN101149973A Semiconductor components
03/26/2008CN101149972A FLASH memory chip with a plurality of separate operation memory space
03/26/2008CN100377335C Method for fabricating flash memory device
03/26/2008CN100377239C Information recording medium and method for manufacturing the same
03/26/2008CN100377120C Non-volatile storage device control method
03/26/2008CN100377119C Protection method for data in flash memory media
03/25/2008US7349265 Reading method of a NAND-type memory device and NAND-type memory device
03/25/2008US7349262 Methods of programming silicon oxide nitride oxide semiconductor (SONOS) memory devices