Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
04/2008
04/24/2008US20080094905 Nonvolatile Memory
04/24/2008US20080094904 Flash memory device operating at multiple speeds
04/24/2008US20080094902 Flash memory devices and methods of operating the same
04/24/2008US20080094901 Flash memory device capable of preventing coupling effect and program method thereof
04/24/2008US20080094900 Nonvolatile semiconductor memory
04/24/2008US20080094899 Non-volatile semiconductor memory device
04/24/2008US20080094898 Non-volatile semiconductor storage device
04/24/2008US20080094897 Non-volatile semiconductor memory device and method for recovering data in non-volatile semiconductor memory device
04/24/2008US20080094896 Non Volatile Memory RAD-hard (NVM-rh) System
04/24/2008US20080094894 Nonvolatile semiconductor memory and memory system
04/24/2008US20080094892 Method for protecting memory cells during programming
04/24/2008US20080094891 Parallel Threshold Voltage Margin Search for MLC Memory Application
04/24/2008US20080094890 Semiconductor memory device and data write and read method thereof
04/24/2008US20080093678 NAND type non-volatile memory device and method of forming the same
04/24/2008DE102007046401A1 Non-volatile semiconductor memory system for e.g. cellular telephone, has buffer memory storing set of data to be programmed in selected memory cells, and backup memory storing another set of data that is previously programmed
04/24/2008DE102007001859B3 Integrated circuit e.g. dynamic RAM, for use in electronic device, has resistive memory cell, and p-channel transistor that produces predetermined reading voltage for smaller resistance range which has reference conditions of reference cell
04/23/2008EP1914756A1 Semiconductor storage device
04/23/2008EP1914670A2 Semiconductor device
04/23/2008EP1913668A2 System and method for protecting ic components
04/23/2008EP1665285B1 Methods for identifying non-volatile memory elements with poor subthreshold slope or weak transconductance
04/23/2008CN101167188A Electric device comprising phase change material
04/23/2008CN101167139A Method and apparatus for incorporating block redundancy in a memory array
04/23/2008CN101167138A Electronic element, storage device and semiconductor integrated circuit
04/23/2008CN101165919A Method of operating a semiconductor memory device having a recessed control gate electrode
04/23/2008CN101165807A Flash memory devices and methods of operating the same
04/23/2008CN100383976C Memory device and method of erasing data from the same
04/23/2008CN100383974C Non-volatile semiconductor memory device and manufacturing method thereof
04/23/2008CN100383972C Semiconductor memory device
04/23/2008CN100383955C Method for dynamic adjusting operation of memory chip, and device for measuring thickness of 0N0 layer
04/23/2008CN100383894C Integrate circuit and method for operating the same
04/23/2008CN100383893C Nonvolatile memory device with read amplifer confirming reading limitation
04/23/2008CN100383892C Memory device having page buffer with double-register and its using method
04/22/2008USRE40252 Flash memory control method, flash memory system using the control method and flash memory device using the control method
04/22/2008US7362971 Camera unit incorporating a lidded printhead unit
04/22/2008US7362628 Semiconductor memory and redundancy repair method
04/22/2008US7362623 Semiconductor memory device
04/22/2008US7362618 Flash EEprom system
04/22/2008US7362617 Nonvolatile semiconductor memory device and method of rewriting data thereof
04/22/2008US7362616 NAND flash memory with erase verify based on shorter evaluation time
04/22/2008US7362615 Methods for active boosting to minimize capacitive coupling effect between adjacent gates of flash memory devices
04/22/2008US7362613 Flash EEPROM system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
04/22/2008US7362612 Program method for flash memory capable of compensating for the reduction of read margin between states
04/22/2008US7362611 Non-volatile memory copy back
04/22/2008US7362609 Memory cell
04/22/2008US7362605 Nanoelectromechanical memory cells and data storage devices
04/22/2008US7361924 Non-volatile memory element and production method thereof and storage memory arrangement
04/17/2008WO2008045839A1 Non-volatile memory with worst-case control data management and methods therefor
04/17/2008WO2008045805A1 Variable program voltage increment values in non-volatile memory program operations
04/17/2008WO2008045411A2 Adaptive regulator for idle state in a charge pump circuit of a memory device
04/17/2008WO2007145967A3 Method and apparatus for managing behavior of memory devices
04/17/2008WO2007133645A3 Nand architecture memory devices and operation
04/17/2008US20080091873 Controller for refreshing memories
04/17/2008US20080089154 Memory device
04/17/2008US20080089142 Voltage generation circuit, flash memory device including the same and method for programming the flash memory device
04/17/2008US20080089140 Adaptive regulator for idle state in a charge pump circuit of a memory device
04/17/2008US20080089135 Systems for partitioned erase and erase verification in non-volatile memory
04/17/2008US20080089134 Partitioned erase and erase verification in non-volatile memory
04/17/2008US20080089133 Systems for partitioned soft programming in non-volatile memory
04/17/2008US20080089132 Partitioned soft programming in non-volatile memory
04/17/2008US20080089131 Flash Memory Device Including Blocking Voltage Generator
04/17/2008US20080089130 Non-volatile memory devices and methods of programming the same
04/17/2008US20080089129 Flash memory device with flexible address mapping scheme
04/17/2008US20080089128 Programming non-volatile memory with dual voltage select gate structure
04/17/2008US20080089127 Non-volatile memory with dual voltage select gate structure
04/17/2008US20080089126 Circuitry for reliability testing as a function of slew
04/17/2008US20080089125 Memory device
04/17/2008US20080089123 Method for Programming a Multi-Level Non-Volatile Memory Device
04/17/2008US20080089122 Sense amplifying circuit capable of operating with lower voltage and nonvolatile memory device including the same
04/17/2008DE102007047033A1 Resistiver Speicher mit nebenschlüssigen Speicherzellen Resistive memory with next-positive memory cells
04/17/2008DE102006052236A1 Speicher-Schaltkreis und Verfahren zum Auslesen eines Speichers Memory circuit and method for reading a memory
04/16/2008EP1912255A2 A stacked thin-film-transistor non-volatile memory device and method for fabricating the same
04/16/2008EP1912254A2 Vertical-channel FinFET SONOS memory, manufacturing method thereof and operating method using the same
04/16/2008EP1912223A1 Operating techniques for reducing the program and read disturbs of a non-volatile memory
04/16/2008EP1911100A2 Electronic device including discontinuous storage elements
04/16/2008EP1911033A1 Programming non-volatile memory with self-adjusting maximum program loop
04/16/2008CN101162760A Resistor type memory element and manufacturing method thereof and operation method
04/16/2008CN101162736A Vertical channel transistor structure and manufacturing method thereof
04/16/2008CN101162611A Voltage generation circuit, flash memory device including the same and method for programming the flash memory device
04/16/2008CN101162610A Circuit and method generating program voltage for non-volatile memory device
04/16/2008CN101162609A Non-volatile memory devices and methods of programming the same
04/16/2008CN101162608A Memory block of flash memory sign method
04/16/2008CN101162607A Memory body and low offset limitation bias circuit thereof
04/16/2008CN100382325C Semiconductor integrated circuit device
04/16/2008CN100382320C Storage matrix layer and method for programming 3D RRAM
04/16/2008CN100382201C Nonvolatile memory with write protection zone
04/16/2008CN100382200C Semiconductor memory device
04/16/2008CN100381791C Electronic measuring instrument and method for operating an electronic measuring instrument
04/15/2008US7360136 Increasing the effectiveness of error correction codes and operating multi-level memory systems by using information about the quality of the stored data
04/15/2008US7360077 Production line boot sector lock
04/15/2008US7360068 Reconfigurable signal processing IC with an embedded flash memory device
04/15/2008US7359822 Testing device
04/15/2008US7359274 Semiconductor memory device
04/15/2008US7359251 Non-volatile semiconductor memory device, erase method for same, and test method for same
04/15/2008US7359250 Twin insulator charge storage device operation and its fabrication method
04/15/2008US7359249 Nonvolatile semiconductor memory device and method of rewriting data thereof
04/15/2008US7359246 Memory device with a ramp-like voltage biasing structure based on a current generator
04/15/2008US7359245 Flash memory device having multi-level cell and reading and programming method thereof
04/15/2008US7359244 Non-volatile semiconductor memory device and semiconductor disk device
04/15/2008US7359243 Memory cell repair using fuse programming method in a flash memory device
04/15/2008US7359239 Non-volatile memory device having uniform programming speed