Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
11/2007
11/15/2007US20070263449 Method and apparatus for programming flash memory
11/15/2007US20070263448 Operating method of a non-volatile memory
11/15/2007US20070263447 Static semiconductor memory
11/15/2007US20070263446 Method for programming NAND flash memory device and page buffer performing the same
11/15/2007US20070263445 Non-volatile memory cell array
11/15/2007US20070263444 Non-Volatile Memory System with End of Life Calculation
11/15/2007US20070263442 Off-Die Charge Pump that Supplies Multiple Flash Devices
11/15/2007US20070263441 Analog Interface for a Flash Memory Die
11/15/2007US20070263440 Multi-Chip Package for a Flash Memory
11/15/2007US20070263439 Dynamic Cell Bit Resolution
11/15/2007US20070263438 Method for reading NAND memory device and memory cell array thereof
11/15/2007US20070263437 Method and apparatus to improve nonvolatile memory data retention
11/15/2007US20070263436 Method and apparatus to improve nonvolatile memory data retention
11/15/2007US20070263423 Three-dimensional memory device incorporating segmented array line memory array
11/15/2007DE102007017963A1 Non-volatile memory device`s e.g. digital camera, memory cell, has select transistor gate of select transistor, and two memory cell transistor gates of memory cell transistors on substrate at opposite sides of select transistor
11/15/2007DE102006023934B3 Non-volatile memory device, has control circuit with switch to switch current depending on digital logic potential and with current-potential-transducer connected with outlet, where transducer charges control potential to control drift unit
11/15/2007DE102006021746A1 Speichervorrichtung Memory device
11/15/2007DE102006021745A1 Nichtflüchtiger Speicherbaustein Non-volatile memory device
11/15/2007CA2615312A1 Removable card bridge for a storage card or memory card
11/14/2007EP1559112B1 Maintaining an average erase count in a non-volatile storage system
11/14/2007CN101071647A Flash programmer for programming nand flash and nor/nand combined flash
11/14/2007CN101071646A Method and apparatus to improve nonvolatile memory data retention
11/14/2007CN101071645A Method and apparatus to improve nonvolatile memory data retention
11/14/2007CN101071644A Methods and apparatus for implementing bit-by-bit erase of a flash memory device
11/14/2007CN101071643A Programming method for write buffer and double word flash programming
11/14/2007CN101071642A Method of verifying flash memory device
11/14/2007CN101071641A Non-volatile memory device and method of operation therefor
11/14/2007CN101071640A Method for verifying flash memory devices
11/14/2007CN101071639A Method and apparatus for reading data from nonvolatile memory
11/14/2007CN101071638A Flash memory device and erase method thereof
11/14/2007CN101071637A Flash memory device and data i/o operation method thereof
11/14/2007CN101071636A Multi-way flash accessing-data method
11/14/2007CN100349230C High-speed, low-tension nonvolatile memory
11/14/2007CN100349138C Non-volatility memory access system and its cycling usage method of access space
11/13/2007US7296128 Nonvolatile memory with error correction for page copy operation and method thereof
11/13/2007US7296111 Multilevel storage nonvolatile semiconductor memory device enabling high-speed data reading and high-speed data writing
11/13/2007US7295503 Data storage device including nanotube electron sources
11/13/2007US7295479 Apparatus and method for managing bad blocks in a flash memory
11/13/2007US7295476 Data line disturbance free memory block divided flash memory and microcomputer having flash memory therein
11/13/2007US7295469 Nonvolatile semiconductor memory device with a ROM block settable in a write/erase inhibit mode
11/13/2007US7295468 Nonvolatile semiconductor memory device
11/13/2007US7295467 Semiconductor memory having electrically erasable and programmable semiconductor memory cells
11/13/2007US7295466 Use of recovery transistors during write operations to prevent disturbance of unselected cells
11/13/2007US7295463 Phase-changeable memory device and method of manufacturing the same
11/13/2007US7295455 Semiconductor integrated circuit with photo-detecting elements for reverse-engineering protection
11/13/2007US7295136 Communication system
11/13/2007US7295058 High voltage generating circuit preserving charge pumping efficiency
11/13/2007US7294883 Nonvolatile memory cells with buried channel transistors
11/13/2007US7294880 Semiconductor non-volatile memory cell with a plurality of charge storage regions
11/13/2007US7294878 Semiconductor memory device and method of manufacturing the same
11/13/2007US7294877 Nanotube-on-gate FET structures and applications
11/13/2007US7294875 Nanoscale programmable structures and methods of forming and using same
11/08/2007WO2007126830A2 Memory array having a programmable word length, and method of operating same
11/08/2007WO2007126680A1 Reducing the impact of program disturb
11/08/2007WO2007126665A1 Reducing the impact of program disturb during read
11/08/2007WO2007125590A1 Semiconductor device and control method thereof
11/08/2007WO2007056106A3 Recovering from a non-volatile memory failure
11/08/2007US20070258298 Parallel programming of flash memory during in-circuit test
11/08/2007US20070258291 Methods and apparatus for implementing bit-by-bit erase of a flash memory device
11/08/2007US20070258290 Systems and Methods for Improved Programming of Flash Based Devices
11/08/2007US20070258289 Method of Programming and Erasing a P-Channel BE-SONOS NAND Flash Memory
11/08/2007US20070258288 Flash programmer for programming NAND flash and NOR/NAND combined flash
11/08/2007US20070258287 Mimicking program verify drain resistance in a memory device
11/08/2007US20070258286 Boosting methods for nand flash memory
11/08/2007US20070258280 Securing an integrated circuit
11/08/2007US20070257306 Semiconductor memory device and method for producing the same
11/07/2007EP1851809A1 Snse-based limited reprogrammable cell
11/07/2007EP1851771A2 Nand flash memory system architecture
11/07/2007EP1771861B1 Accessing phase change memories
11/07/2007EP1532635A4 Method of programming a multi-level memory device
11/07/2007CN101069241A Integrated circuit with memory cells comprising a programmable resistor and method for addressing memory cells comprising a programmable resistor
11/07/2007CN101069149A Memory system with sector buffers
11/07/2007CN101067971A Programming method for flash memory capable of compensating reduction of read margin between states
11/07/2007CN101067970A Method of programming and erasing a P-channel be-sonos NAND flash memory
11/07/2007CN101067969A Method and structure for reliable data copy operation for non-volatile memories
11/07/2007CN101067968A Apparatus and method for adaptive controlling flash storage interface reading and writing speed
11/06/2007US7293205 Electronic control unit
11/06/2007US7292494 Internal power management scheme for a memory chip in deep power down mode
11/06/2007US7292480 Memory card having buffer memory for storing testing instruction
11/06/2007US7292479 Memory device with multistage sense amplifier
11/06/2007US7292478 Non-volatile memory including charge-trapping layer, and operation and fabrication of the same
11/06/2007US7292476 Programming method for NAND EEPROM
11/06/2007US7292475 Nonvolatile memory device and data write method for nonvolatile memory device
11/06/2007US7292474 Semiconductor integrated circuit device
11/06/2007US7292471 Semiconductor memory device having a voltage-controlled-oscillator-based readout circuit
11/06/2007US7291519 Methods of forming transistor constructions
11/01/2007WO2007123987A2 Nand erase block size trimming apparatus and method
11/01/2007WO2007103220A3 Calibration system for writing and reading multiple states into phase change memory
11/01/2007US20070255893 Nonvolatile semiconductor memory device
11/01/2007US20070253259 Recording device and HDD built-in recording device
11/01/2007US20070253257 Electrically alterable non-volatile memory cells and arrays
11/01/2007US20070253256 Memory voltage cycle adjustment
11/01/2007US20070253255 Memory device, method for sensing a current output from a selected memory cell and sensing circuit
11/01/2007US20070253254 Non-volatile semiconductor memory device
11/01/2007US20070253253 Multiple select gates with non-volatile memory cells
11/01/2007US20070253251 Ic module and cellular phone
11/01/2007US20070253250 Semiconductor memory device which stores plural data in a cell
11/01/2007US20070253249 Multi-bit nonvolatile memory device and related programming method
11/01/2007US20070253248 Method for programming a reference cell
11/01/2007US20070253247 Non-volatile memory device with single transistor memory cell
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