Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
02/2008
02/28/2008WO2007144807A3 Double gate transistor and method of manufacturing same
02/28/2008US20080052453 Portable data storage device
02/28/2008US20080052341 System and method for processing data associated with a transmission in a data communication system
02/28/2008US20080049531 Memory arrangement and method for operating such a memory arrangement
02/28/2008US20080049521 Method for compacting the erased threshold voltage distribution of flash memory devices during writing operations
02/28/2008US20080049519 Non-volatile memory cell circuit with programming through band-to-band tunneling and impact ionization gate current
02/28/2008US20080049518 NAND flash memory programming
02/28/2008US20080049517 Multi-level non-volatile memory and manufacturing method thereof
02/28/2008US20080049513 Method and apparatus for programming non-volatile data storage device
02/28/2008US20080049512 Nonvolatile memory device and method of programming the same
02/28/2008US20080049510 Flash Memory Controller Utilizing Multiple Voltages and a Method of Use
02/28/2008US20080049509 Nonvolatile semiconductor memory device and control method thereof
02/28/2008US20080049508 Nonvolatile semiconductor memory, its read method and a memory card
02/28/2008US20080049506 Alternate Row-Based Reading and Writing for Non-Volatile Memory
02/28/2008US20080049504 Memory Control Circuit, Nonvolatile Storage Apparatus, and Memory Control Method
02/28/2008US20080049503 Nonvolatile storage and erase control
02/28/2008US20080049502 Flash memory device and program method of flash memory device using different voltages
02/28/2008US20080049500 Nonvolatile memory
02/28/2008US20080049499 Block status storage unit of flash memory device
02/28/2008US20080049498 Integrated Circuit with Analog or Multilevel Storage Cells and User-Selectable Sampling Frequency
02/28/2008US20080049497 Methods of Programming Multi-Bit Flash Memory Devices and Related Devices
02/28/2008US20080049496 Method for modifying data more than once in a multi-level cell memory location within a memory array
02/28/2008US20080049495 Method, apparatus and system relating to automatic cell threshold voltage measurement
02/28/2008US20080049494 Reducing effects of program disturb in a memory device
02/28/2008US20080049493 Flash memory device and erasing method thereof
02/28/2008US20080048767 Semiconductor device with surge protection circuit
02/28/2008US20080048244 linoleic acid to gamma-linolenic acid and alpha-linolenic acid to stearidonic acid; added to pharmaceuticals, nutritional compositions, animal feeds, cosmetics; host cell; polypeptide; vector; nucleic acid sequence
02/28/2008DE102006047434A1 Verfahren zum Ermitteln eines Speicherzustands einer resistiven Speicherzelle sowie Vorrichtung zum Messen des Speicherzustands einer resistiven Speicherzelle A method for detecting a storage state of a resistive memory cell, as well as means for measuring the storage state of a resistive memory cell,
02/28/2008DE102006039164A1 Integrated circuit e.g. conductive bridging RAM device, has voltage control unit that is coupled to programmable resistance cell and regulates voltage existing at programmable resistance cell to target voltage
02/27/2008EP1892724A1 A memory device with row selector comprising series connected medium voltage transistors
02/27/2008EP1892722A1 Information storage elements and methods of manufacture thereof
02/27/2008EP1892721A2 Method of programming a multi-bit non-volatile memory device and multi-bit non-volatile memory device
02/27/2008EP1892720A1 A non-volatile, electrically-programmable memory with a plurality of storage densities and data transfer speeds
02/27/2008EP1891644A1 Selective slow programming convergence in a flash memory device
02/27/2008EP1891643A2 Programming memory devices
02/27/2008EP1665284B1 Non-volatile memory and method with bit line compensation dependent on neighboring operating modes
02/27/2008EP1588379B1 Non-volatile semiconductor memory with large erase blocks storing cycle counts
02/27/2008EP1559113B1 Tracking the most frequently erased blocks in non-volatile storage systems
02/27/2008CN101132162A Motor control device and control method thereof
02/27/2008CN101132161A Motor controller and control method thereof
02/27/2008CN101131873A Storing card access control chip with spread spectrum clock
02/27/2008CN101131872A Method of determining a memory state of a resistive memory cell and device measuring the memory state of a resistive memory cell
02/27/2008CN101131871A Non-volatile, electrically-programmable memory
02/27/2008CN101131870A Flash memory devices including block information blocks and methods of operating same
02/27/2008CN101131861A Semiconductor storage device
02/27/2008CN101131860A Semiconductor storage device
02/27/2008CN100372121C Multi-exponent storage unit
02/26/2008USRE40110 Nonvolatile semiconductor memory device for storing multivalued data
02/26/2008US7337282 Memory system and process for controlling a memory component to achieve different kinds of memory characteristics on one and the same memory component
02/26/2008US7336545 Semiconductor device having switch circuit to supply voltage
02/26/2008US7336543 Non-volatile memory device with page buffer having dual registers and methods using the same
02/26/2008US7336539 Method of operating flash memory cell
02/26/2008US7336538 Page buffer circuit and method for multi-level NAND programmable memories
02/26/2008US7336537 Handling defective memory blocks of NAND memory devices
02/26/2008US7336536 Handling defective memory blocks of NAND memory devices
02/26/2008US7336535 Semiconductor integrated circuit device
02/26/2008US7336534 Non-volatile memory device and drive method thereof
02/26/2008US7336532 Method for reading NAND memory device and memory cell array thereof
02/26/2008US7336531 Multiple level cell memory device with single bit per cell, re-mappable memory block
02/26/2008US7336529 Thin film magnetic memory device storing program information efficiently and stably
02/26/2008US7336519 Stacked integrated circuit device/data processor device having a flash memory formed on top of a buffer memory
02/26/2008US7336516 Unified multilevel memory systems and methods
02/26/2008US7336121 Negative voltage generator for a semiconductor memory device
02/26/2008US7335937 Nonvolatile semiconductor memory
02/26/2008US7335907 Memory device
02/26/2008US7335906 Phase change memory device
02/26/2008US7335556 Manufacturing method of semiconductor device
02/21/2008WO2008020944A2 Resistive memory device with two select transistors
02/21/2008WO2008019767A1 Method for programming a controller in a motor vehicle
02/21/2008US20080046643 Memory card
02/21/2008US20080046636 Monolithic read-while-write flash memory device
02/21/2008US20080043541 Semiconductor memory device having a plurality of chips and capability of outputting a busy signal
02/21/2008US20080043536 Non-volatile memory device and method of programming same
02/21/2008US20080043534 Memory system and data writing method
02/21/2008US20080043532 Semiconductor memory device, semiconductor device, and data write method
02/21/2008US20080043531 Non-volatile semiconductor memory device
02/21/2008US20080043530 Non-volatile semiconductor memory adapted to store a multi-valued data in a single memory cell
02/21/2008US20080043529 Novel Multi-State Memory
02/21/2008US20080043527 Non-volatile memory with both single and multiple level cells
02/21/2008US20080043526 Operating Techniques for Reducing Program and Read Disturbs of a Non-Volatile Memory
02/21/2008US20080043525 Bit cell reference device and methods thereof
02/21/2008US20080043524 Semiconductor memory device
02/21/2008US20080042193 Semiconductor device
02/21/2008US20080042126 Ballistic direct injection NROM cell on strained silicon structures
02/21/2008DE10220561B4 Generator für negative Spannung für ein Halbleiterspeicherbauelement Negative voltage generator for a semiconductor memory device
02/21/2008DE102007036548A1 Verfahren zum Programmieren eines Flashspeicherbauelements, Flashspeicherbauelement und Speichersystem A method of programming a flash memory device, flash memory device and memory system
02/21/2008DE102006036546A1 Kapazitätsladestrombegrenzungseinrichtung, Ladungspumpenanordnung, Verfahren zum Begrenzen eines Ladestromes an einer Ladungspumpe und Verfahren zum Begrenzen des Ladestromes an einen Kondensator Capacitance charging current-limiting device, the charge pump arrangement, method of limiting a charging current to a charge pump and method for limiting the charging current to a capacitor
02/20/2008EP1889308A1 Memory device with switching glass layer
02/20/2008EP1889299A2 Non-volatile two-transistor programmable logic cell and array layout
02/20/2008CN101127241A Word-line voltage switching circuit for low voltage EEPROM
02/20/2008CN101127240A Method for reducing effects of coupling between storage elements of a non-volatile memory
02/20/2008CN101127239A Semiconductor nonvolatile memory
02/20/2008CN101127238A 半导体存储装置 The semiconductor memory device
02/20/2008CN101126892A Mask for forming contact hole
02/20/2008CN100370614C Semiconductor integrated circuit device and method for controlling semiconductor integrated circuit device
02/20/2008CN100370599C Method for operating memory element array,Non-volatile memory device and method producing the same
02/20/2008CN100370555C Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom
02/20/2008CN100370423C Method and system for 51 one-chip computer on-system upgrading
02/20/2008CN100370375C Device and method for management of storage in electronic watch
02/19/2008USRE40076 Program circuit