Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
02/2008
02/19/2008US7334121 Flash memory system including a duplicate booting program and apparatus and method for protecting the same flash memory
02/19/2008US7334080 Nonvolatile memory with independent access capability to associated buffer
02/19/2008US7333384 Techniques for storing accurate operating current values
02/19/2008US7333371 Non-volatile semiconductor memory device
02/19/2008US7333369 Nonvolatile semiconductor memory
02/19/2008US7333368 Semiconductor memory device
02/19/2008US7333367 Flash memory devices including multiple dummy cell array regions
02/19/2008US7333366 Common wordline flash array architecture
02/19/2008US7333364 Cell-downgrading and reference-voltage adjustment for a multi-bit-cell flash memory
02/19/2008US7333362 Electrically erasable and programmable, non-volatile semiconductor memory device having a single layer of gate material, and corresponding memory plane
02/19/2008US7332766 Semiconductor integrated circuit device with a stacked gate including a floating gate and a control gate
02/19/2008US7332762 Nonvolatile semiconductor memory
02/14/2008WO2008019218A2 Phased garbage collection
02/14/2008US20080037332 Semiconductor storage device and electronic equipment
02/14/2008US20080037331 Non-volatile memory device and associated method of erasure
02/14/2008US20080037330 Ramp gate erase for dual bit flash memory
02/14/2008US20080037329 Nonvolatile semiconductor memory, method for reading the same, and microprocessor
02/14/2008US20080037328 Semiconductor memory device
02/14/2008US20080037326 Xip flash memory device and program method
02/14/2008US20080037325 On-chip ee-prom programming waveform generation
02/14/2008US20080037324 Electrical thin film memory
02/14/2008US20080037323 Semiconductor integrated circuit and nonvolatile memory element
02/14/2008US20080037322 Semiconductor memory having electrically erasable and programmable semiconductor memory cells
02/14/2008US20080037321 Partial-Write-Collector Algorithm for Multi Level Cell (MLC) Flash
02/14/2008US20080037320 Flash memory with multi-bit read
02/14/2008US20080037319 Methods for identifying non-volatile memory elements with poor subthreshold slope or weak transconductance
02/14/2008DE112006000661T5 Stromfühlerschaltung mit einer stromkompensierten Drainspannungsregelung The current sensing circuit with a current-compensated drain voltage regulation
02/14/2008CA2660087A1 Memory configuration and method for calibrating read/write data based on performance characteristics of the memory configuration
02/13/2008EP1886320A1 Method for extracting the distribution of charge stored in a semiconductor device
02/13/2008EP1886319A2 Starting program voltage shift with cycling of non-volatile memory
02/13/2008EP1886318A1 Method for controlling the "first-to-melt" region in a pcm cell and devices obtained thereof
02/13/2008EP1886317A1 Method for controlling the "first-to-melt" region in a pcm cell and devices obtained thereof
02/13/2008EP1683200B1 Memory transistor and memory element with an asymmetrical pocket doping region
02/13/2008EP1537671B1 Dac-based voltage regulator for flash memory array
02/13/2008EP1488429B1 Novel method and structure for efficient data verification operation for non-volatile memories
02/13/2008EP1466331B1 Noise reduction technique for transistors and small devices utilizing an episodic agitation
02/13/2008EP1393323B1 Non-volatile memory with improved programming and method therefore
02/13/2008EP1374243B1 System and method for achieving fast switching of analog voltages on a large capacitive load
02/13/2008EP1029278B1 Moving sequential sectors within a block of information in a flash memory mass storage architecture
02/13/2008CN101124552A System and method for storaging data
02/13/2008CN101123560A Communication adapter device, communication adapter, method for write in nonvolatile memory, and electric apparatus used for the same, and rom writer
02/13/2008CN101123119A Storage device using selective self-boosting programming operation and method
02/13/2008CN101123118A Method and circuit for electrically programming semiconductor memory cells
02/13/2008CN101123117A Non volatile memory device and its operation method
02/13/2008CN101123116A Memory device and its reading and writing method
02/13/2008CN101123115A Semiconductor memory device
02/13/2008CN101122865A Computer mainboard quick suspending and recovery device using phase-change memory
02/13/2008CN100369381C High speed zero DC power programmable logic device (PLD) architecture
02/13/2008CN100369253C Semiconductor integrated circuit device, its manufacturing method and action method
02/13/2008CN100369157C System and method with pointer for updating non-volatile memory
02/13/2008CN100368818C Test module and test method in use for electrical erasable memory built in chip
02/12/2008US7330995 Nonvolatile memory apparatus which prevents destruction of write data caused by power shutdown during a writing process
02/12/2008US7330944 Method for storing data in a memory, a system, an electronic device and a memory card
02/12/2008US7330377 Semiconductor memory device
02/12/2008US7330376 Method for memory data storage by partition into narrower threshold voltage distribution regions
02/12/2008US7330375 Sense amplifier circuit for parallel sensing of four current levels
02/12/2008US7330374 Nonvolatile semiconductor memory device, such as an EEPROM or a flash memory, with reference cells
02/12/2008US7330373 Program time adjustment as function of program voltage for improved programming speed in memory system
02/12/2008US7330372 Non-volatile semiconductor memory device
02/07/2008WO2008016951A2 Method and apparatus for hierarchical bit line bias bus for block selectable memory array
02/07/2008WO2008016950A2 Method and apparatus for memory array incorporating two data busses for memory array block selection
02/07/2008WO2008016946A2 Method and apparatus for reading a multi-level passive element memory cell array
02/07/2008WO2007114955A3 Methods for erasing and programming memory devices
02/07/2008WO2007109046B1 Cross-point memory array
02/07/2008US20080031078 High voltage generator and related flash memory device
02/07/2008US20080031056 Semiconductor memory device having a plurality of chips and capability of outputting a busy signal
02/07/2008US20080031053 A method for improving memory device cycling endurance by providing additional pulse
02/07/2008US20080031052 A double-bias erase method for memory devices
02/07/2008US20080031050 Flash memory device having a data buffer and programming method of the same
02/07/2008US20080031049 Operation of Nonvolatile Memory Having Modified Channel Region Interface
02/07/2008US20080031048 Memory device including 3-dimensionally arranged memory cell transistors and methods of operating the same
02/07/2008US20080031046 Nonvolatile Memory Array Having Modified Channel Region Interface
02/07/2008US20080031045 Semiconductor devices with source and bulk coupled to separate voltage supplies
02/07/2008US20080031044 Memory device architectures and operation
02/07/2008US20080031043 Non-volatile memory device
02/07/2008US20080031041 Non-volatile memory device with both single and multiple level cells
02/07/2008US20080031039 Devices and operation methods for reducing second bit effect in memory device
02/07/2008US20080031031 Semiconductor integrated circuit and ic card system
02/07/2008DE102007034878A1 Beschleunigtes Single-Ended-Lesen für eine Speicherschaltung Accelerated single-ended reading for a memory circuit
02/07/2008DE102006041783B3 Charge-trapping-memory device i.e. Nitride ROM, programming and deletion method, involves executing programming cycle as reference point that is shifted based on wear-level determination, and executing testing process based on threshold
02/07/2008DE102006035633A1 Massenspeichereinrichtung und Halbleiterspeicherkarte Mass storage device and semiconductor memory card
02/06/2008EP1884956A1 Non-volatile memory device having pass transistors and method of operating the same
02/06/2008EP1883931A2 Predictive methods and apparatus for non-volatile memory
02/06/2008CN101120417A Erased sector detection mechanisms
02/06/2008CN101120416A Substrate electron injection techniques for programming non-volatile charge storage memory cells
02/06/2008CN101120414A Data relocation in a memory system
02/06/2008CN101118931A Devices and operation methods for reducing second bit effect in memory device
02/06/2008CN101118926A Multi-order non-volatility memory and manufacturing method and operation method therefor
02/06/2008CN101118907A And/not gate type non-volatility memory and manufacturing method and operation method therefor
02/06/2008CN101118906A Low disturbance single grid non-volatile memory and operation approach thereof
02/06/2008CN101118786A A double-bias erase method for memory devices
02/06/2008CN101118783A Electronic data flash memory fasten with flash memory bad blocks control system
02/06/2008CN101118779A Electrical resistance bias canceling circuit and electrical resistance compensation process using same
02/06/2008CN100367506C Byte-operational nonvolatile semiconductor memory device
02/06/2008CN100367411C Semiconductor memory device and method for programming and erasing a memory cell
02/06/2008CN100367236C Storage system comprising means managing a storage unit with anti-wear and anti-wear management of a storage unit
02/05/2008US7328302 Device and method for treating a state of a memory
02/05/2008US7328301 Dynamically mapping block-alterable memories
02/05/2008US7327624 Storage device employing a flash memory
02/05/2008US7327619 Reference sense amplifier for non-volatile memory