Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
03/2008
03/12/2008CN101142630A Nand flash memory system architecture
03/12/2008CN101140806A Nonvolatile memory device and related methods of operation
03/12/2008CN101140805A Method and apparatus for managing bad run-time block in mlc flash memory
03/12/2008CN101140804A Method of monitoring an erase threshold voltage distribution in a nand flash memory device
03/12/2008CN101140803A Flash memory device having branch path
03/12/2008CN101140801A Phase change random access memory device and related methods of operation
03/12/2008CN101140799A Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
03/12/2008CN100375101C Expandable mini memory card and corresponding extensional memory card
03/11/2008USRE40147 Memory card device including a clock generator
03/11/2008US7343462 Method for using non-volatile memory and electronics device thereof
03/11/2008US7343445 Non-volatile memory card and transfer interruption means
03/11/2008US7343239 Program rewriting system and program rewriting method
03/11/2008US7342843 Semiconductor integrated circuit device
03/11/2008US7342835 Memory device with pre-fetch circuit and pre-fetch method
03/11/2008US7342834 Data storage having injected hot carriers and erasable when selectively exposed to ambient light radiation
03/11/2008US7342833 Nonvolatile memory cell programming
03/11/2008US7342832 Bit line pre-settlement circuit and method for flash memory sensing scheme
03/11/2008US7342831 System for operating non-volatile memory using temperature compensation of voltages of unselected word lines and select gates
03/11/2008US7342826 Semiconductor device
03/11/2008US7342825 Nonvolatile semiconductor memory having plural data storage portions for a bit line connected to memory cells
03/11/2008US7342279 Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
03/11/2008US7341918 Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
03/11/2008US7341911 Method of making EEPROM transistor pairs for block alterable memory
03/06/2008WO2008027681A2 Non-volatile memory device and method having bit-state assignments selected to minimize signal coupling
03/06/2008WO2008026204A2 Logical super block mapping for nand flash memory
03/06/2008WO2007136704A3 Nand system with a data write frequency greater than a command-and-address-load frequency
03/06/2008WO2007134253A3 Use of alternative value in cell detection
03/06/2008WO2007134247A3 Dynamic cell bit resolution
03/06/2008WO2007131062A3 Non-volatile memory with background data latch caching during read operations and methods therefor
03/06/2008US20080059852 Memory card and its initial setting method
03/06/2008US20080059695 Method for controlling non-volatile semiconductor memory system
03/06/2008US20080059660 Portable data storage device
03/06/2008US20080057646 Nonvolatile memory device and methods of fabricating and driving the same
03/06/2008US20080056035 Method and apparatus for adaptive programming of flash memory, flash memory devices, and systems including flash memory having adaptive programming capability
03/06/2008US20080056013 Method and Related Apparatus Capable of Improving Endurance of Memory
03/06/2008US20080056010 Non-volatile memory with programming through band-to-band tunneling and impact ionization gate current
03/06/2008US20080056009 Method of programming non-volatile memory
03/06/2008US20080056008 Reducing read failure in a memory device
03/06/2008US20080056005 Non-volatile memory cell read failure reduction
03/06/2008US20080056004 NAND Flash Memory Device and Method of Manufacturing and Operating the Same
03/06/2008US20080056003 Concurrent programming of non-volatile memory
03/06/2008US20080056002 Concurrent programming of non-volatile memory
03/06/2008US20080056001 System for performing data pattern sensitivity compensation using different voltage
03/06/2008US20080056000 System for performing data pattern sensitivity compensation using different voltage
03/06/2008US20080055999 Nonvolatile semiconductor memory device and writing method thereof
03/06/2008US20080055998 Flash memory device and method for programming multi-level cells in the same
03/06/2008US20080055997 Flash memory device and refresh method
03/06/2008US20080055996 Flash memory device including unified oscillation circuit and method of operating the device
03/06/2008US20080055995 Programming non-volatile memory with improved boosting
03/06/2008US20080055994 Concurrent programming of non-volatile memory
03/06/2008US20080055991 Voltage generator circuit capable of generating different voltages based on operating mode of non-volatile semiconductor memory device
03/06/2008US20080055987 Memory Device and Method of Operating a Memory Device
03/06/2008US20080055986 Semiconductor memory device having faulty cells
03/06/2008US20080055985 Non-volatile semiconductor memory device
03/06/2008US20080055984 Non-volatile memory device and method having bit-state assignments selected to minimize signal coupling
03/06/2008US20080055983 Semiconductor memory device comprising controllable threshold voltage dummy memory cells
03/06/2008US20080055982 Non-volatile memory device and method of preventing hot electron program disturb phenomenon
03/06/2008US20080055981 Non-volatile memory device and method of preventing hot electron program disturb phenomenon
03/06/2008US20080055980 Method and apparatus for a non-volatile memory device with reduced program disturb
03/06/2008US20080055979 Method of monitoring an erase threshold voltage distribution in a nand flash memory device
03/06/2008US20080055975 Method for measuring threshold voltage of sonos flash device
03/05/2008EP1895542A2 Flash memory device having multi-page copyback functionality and related block replacement methods
03/05/2008EP1895541A1 Method for reading phase change memories and phase change memory
03/05/2008EP1894244A2 Non-volatile memory cells without diffusion junctions
03/05/2008EP1894231A2 Tft charge storage memory cell having high-mobility corrugated channel
03/05/2008EP1894207A1 Program method for flash memory with optimized voltage level dependent of the number of bits detected to have failed programming
03/05/2008EP1894206A1 Memory block erasing in a flash memory device
03/05/2008EP1714292B1 Non-volatile memory cell using high-k material and inter-gate programming
03/05/2008EP1665404A4 Multiple bit chalcogenide storage device
03/05/2008CN101138050A Current sensing circuit with a current-compensated drain voltage regulation
03/05/2008CN101138049A Method for operating a passive matrix-addressable ferroelectric or electret memory device
03/05/2008CN101138048A Decoder for memory device
03/05/2008CN101137970A Scheduling of housekeeping operations in flash memory systems
03/05/2008CN101137143A Method for preventing original information erasure when updating mobile terminal
03/05/2008CN101136452A Phase variation storage installation and its making method
03/05/2008CN101136249A Voltage generator circuit capable of generating different voltages based on operating mode of non-volatile semiconductor memory device
03/05/2008CN101136248A Charge pump output high-pressure control device
03/05/2008CN101136247A Methods of programming a resistive memory device
03/05/2008CN100373502C Effect of improving flash memory at low step format
03/05/2008CN100373352C Data recording apparatus, initialization method of recording medium, and storage medium
03/05/2008CN100373336C Method for realizing flash-storage dynamic update of single-chip machine
03/04/2008US7340581 Method of writing data to non-volatile memory
03/04/2008US7339831 Non-volatile semiconductor memory device allowing efficient programming operation and erasing operation in short period of time
03/04/2008US7339830 One transistor SOI non-volatile random access memory cell
03/04/2008US7339827 Non-volatile semiconductor memory device and writing method thereof
03/04/2008US7339825 Nonvolatile semiconductor memory with write global bit lines and read global bit lines
03/04/2008US7339824 Combination nonvolatile memory using unified technology with byte, page and block write and simultaneous read and write operations
03/04/2008US7339822 Current-limited latch
03/04/2008US7339821 Dual-gate nonvolatile memory and method of program inhibition
03/04/2008US7339820 Nonvolatile memory and semiconductor device
03/04/2008US7339239 Vertical NROM NAND flash memory array
03/04/2008US7339233 Nonvolatile semiconductor memory device and manufacturing method thereof
03/04/2008US7339229 Nonvolatile memory solution using single-poly pFlash technology
03/04/2008US7339226 Dual-level stacked flash memory cell with a MOSFET storage transistor
03/04/2008US7338851 Diode/superionic conductor/polymer memory structure
02/2008
02/28/2008WO2008024322A1 Shielding floating gate tunneling element structure
02/28/2008WO2008023368A2 A nand flash memory controller exporting a logical sector-based interface
02/28/2008WO2008022568A1 High reliability storage structure of sort management sector
02/28/2008WO2008002832A3 Method for programming non-volatile memory using variable amplitude programming pulses
02/28/2008WO2007146010A3 Programming a non-volatile memory device
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