Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
05/2010
05/11/2010US7715243 Storage device employing a flash memory
05/11/2010US7715242 Erasing method of non-volatile memory
05/11/2010US7715241 Method for erasing a P-channel non-volatile memory
05/11/2010US7715239 Memory voltage cycle adjustment
05/11/2010US7715237 Method, system and circuit for operating a non-volatile memory array
05/11/2010US7715235 Non-volatile memory and method for ramp-down programming
05/11/2010US7715234 Reducing effects of program disturb in a memory device
05/11/2010US7715233 Non-volatile memory device
05/11/2010US7715231 Flash memory device having multi-level cell and reading and programming method thereof
05/11/2010US7715230 Method of operating a flash memory device
05/11/2010US7714311 Memory device, memory circuit and semiconductor integrated circuit having variable resistance
05/06/2010WO2010051116A1 Pair bit line programming to improve boost voltage clamping
05/06/2010WO2010048711A1 Data mirroring in serial -connected memory system
05/06/2010WO2010005791A3 Data collection and compression in a solid state storage device
05/06/2010US20100115192 Wear leveling method for non-volatile memory device having single and multi level memory cell blocks
05/06/2010US20100110799 Nonvolatile semiconductor memory device
05/06/2010US20100110798 Program window adjust for memory cell signal line delay
05/06/2010US20100110797 Method and apparatus for programming flash memory
05/06/2010US20100110796 Method of performing erase operation in non-volatile memory device
05/06/2010US20100110795 Boosting seed voltage for a memory device
05/06/2010US20100110794 Non-volatile semiconductor memory having multiple external power supplies
05/06/2010US20100110793 Flash Memory Device and Memory System Including the Same
05/06/2010US20100110792 Pair bit line programming to improve boost voltage clamping
05/06/2010US20100110791 Eeprom memory protected against the effects of breakdown of mos transistors
05/06/2010US20100110790 Semiconductor memory device
05/06/2010US20100110789 Memory device biasing method and apparatus
05/06/2010US20100110788 Data path for multi-level cell memory, methods for storing and methods for utilizing a memory array
05/06/2010US20100110787 Memory cell readout using successive approximation
05/06/2010US20100110786 Nonvolatile memory device, memory system including the same, and memory test system
05/06/2010DE112008001757T5 Systeme und Verfahren zum Bestimmen einer Aktualisierungsrate eines Speichers auf der Basis von HF-Aktivitäten Systems and methods for determining a refresh rate of a memory on the basis of RF activities
05/06/2010DE10304173B4 Halbleiterspeicherbaustein und ein zugehöriges Einschaltleseverfahren Semiconductor memory device and an associated Einschaltleseverfahren
05/06/2010DE102009048179A1 Prozess und Verfahren für eine Löschstrategie in Festkörperplatten Process and procedures for extinguishing strategy in solid state drives
05/06/2010DE10192507B4 Verfahren und Vorrichtung für die Vorhersage von Lösch- und Schreibzeiten von Flash-Speichern Method and device for the prediction of erase and write times of flash memories
05/05/2010CN1937083B Non-volatile memory set-value loading method and memory device
05/05/2010CN1855308B Memory device having a virtual ground array and methods to improve read margin loss
05/05/2010CN1754228B Differential dual floating gate circuit and method for programming
05/05/2010CN1748204B Storage controller, storage device and storage system
05/05/2010CN1653601B Method for making EEPROM structure with ultra small thin windows
05/05/2010CN1628357B Method for reading structural phase-Change memory
05/05/2010CN1575496B Non-volatile memory and operation method thereof
05/05/2010CN1540670B Nonvolatile memory circuit, and updating and operating method thereof
05/05/2010CN1538459B Semiconductor storage device
05/05/2010CN1521762B Method for narrowing starting distribution of voltage
05/05/2010CN101702328A 3d memory and operation method thereof
05/05/2010CN101702327A Memory array
05/05/2010CN101700812A Burning tape braider
05/05/2010CN101084556B Non-volatile memory and method with improved sensing
05/05/2010CN101006520B Non-volatile semiconductor device and method for automatically correcting non-volatile semiconductor device erase operation failure
05/04/2010US7711891 Method, system, and computer-readable medium for updating memory devices in a computer system
05/04/2010US7710787 Method of erasing an EEPROM device
05/04/2010US7710786 NAND flash memory programming
05/04/2010US7710785 Semiconductor memory device having a floating storage bulk region capable of holding/emitting excessive majority carriers
05/04/2010US7710781 Data storage and processing algorithm for placement of multi-level flash cell (MLC) VT
05/04/2010US7710780 Semiconductor non-volatile memory
05/04/2010US7710779 Nonvolatile semiconductor memory, method for reading out thereof, and memory card
05/04/2010US7710777 Semi-volatile NAND flash memory
05/04/2010US7710774 NAND type multi-bit charge storage memory array and methods for operating and fabricating the same
05/04/2010US7710773 Nonvolatile memory devices that support virtual page storage using odd-state memory cells
05/04/2010US7709884 Non-volatile two transistor semiconductor memory cell and method for producing the same
05/04/2010CA2505165C Reconfiguration of the programmable logic of an integrated circuit
04/2010
04/29/2010WO2010047926A1 Programming non-volatile memory with high resolution variable initial programming pulse
04/29/2010WO2010047925A1 Programming non-volatile memory with variable initial programming pulse
04/29/2010WO2010047911A1 Page buffer program command and methods to reprogram pages without re-inputting data to a memory device
04/29/2010WO2010047140A1 Integrated circuit device
04/29/2010US20100106898 Storage and reproduction apparatus
04/29/2010US20100103745 Nand Flash Memory With a Programming Voltage Held Dynamically in a Nand Chain Channel Region
04/29/2010US20100103744 Non-volatile memory device and method of driving the same
04/29/2010US20100103743 Flash memory device and method of testing the flash memory device
04/29/2010US20100103742 Method of operating nonvolatile memory device and memory system
04/29/2010US20100103741 Nonvolatile semiconductor memory device including plural memory cells and a dummy cell coupled to an end of a memory cell
04/29/2010US20100103740 Nonvolatile Memory Device, Methods of Programming the Nonvolatile Memory Device and Memory System Including the Same
04/29/2010US20100103739 Memory configuration of a composite memory device
04/29/2010US20100103737 Read Compensation Circuits and Apparatus Using Same
04/29/2010US20100103736 Nonvolatile semiconductor memory having a word line bent towards a select gate line side
04/29/2010US20100103735 Memory device and program method thereof
04/29/2010US20100103734 Programming non-volatile memory with high resolution variable initial programming pulse
04/29/2010US20100103733 Programming non-volatile memory with variable initial programming pulse
04/29/2010US20100103732 Controlling ac disturbance while programming
04/29/2010US20100103731 Method analyzing threshold voltage distribution in nonvolatile memory
04/29/2010DE102009035954A1 Verfahren zum Programmieren von Spezifischer-Widerstand-Änderungs-Speicher A method for programming of a specific-resistance-change memory
04/28/2010EP2179362A1 Memory system
04/28/2010EP1788582B1 Erasing method for nonvolatile storage, and nonvolatile storage
04/28/2010CN1886798B Memory cell array with staggered local inter-connect structure
04/28/2010CN1784642B Chalcogenide constant current device,and its method of fabrication and operation
04/28/2010CN1720588B Flash memory cell arrays having dual control gates per memory cell charge storage element
04/28/2010CN1717662B Memory module, memory system, and information device
04/28/2010CN1658171B Faster write operations to nonvolatile memory by manipulation of frequently accessed sectors
04/28/2010CN1647214B Refresh scheme for dynamic page programming
04/28/2010CN1578988B Error management for writable tracking storage units storing reference values
04/28/2010CN1558423B 半导体存储器 Semiconductor memory
04/28/2010CN1491417B Programmable switch element and method for programming the transistor to programmable switch
04/28/2010CN101699562A Erasing and writing method of phase change memory
04/28/2010CN101002279B Semiconductor device and method for writing data in semiconductor device
04/27/2010US7706204 Portable data storage apparatus
04/27/2010US7706191 Systems and methods to reduce interference between memory cells
04/27/2010US7706190 Method of program-verifying a nonvolatile memory device using subdivided verifications with increasing verify voltages
04/27/2010US7706189 Non-volatile storage system with transitional voltage during programming
04/27/2010US7706188 Flash memory program inhibit scheme
04/27/2010US7706186 Controlling a semiconductor device
04/27/2010US7706184 Nonvolatile semiconductor memory device
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