Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
03/2010
03/18/2010WO2010030110A2 Nand flash memory of using common p-well and method of operating the same
03/18/2010WO2010029160A1 Nonvolatile memory device with internal erasure functionality
03/18/2010WO2009152037A3 Nonvolatile memory and method for correlated multiple pass programming
03/18/2010US20100070799 Dynamic cell bit resolution
03/18/2010US20100070692 Multi-bit-per-cell flash memory device with non-bijective mapping
03/18/2010US20100067310 Mos transistor with a settable threshold
03/18/2010US20100067309 Efficient erase algorithm for sonos-type nand flash
03/18/2010US20100067308 Sub Volt Flash Memory System
03/18/2010US20100067307 Method for programming and erasing an nrom cell
03/18/2010US20100067306 Nonvolatile memory device, operating method thereof, and memory system including the same
03/18/2010US20100067305 Nonvolatile memory device and program method with improved pass voltage window
03/18/2010US20100067304 Write once read only memory employing charge trapping in insulators
03/18/2010US20100067303 Flash memory device capable of reduced programming time
03/18/2010US20100067302 Nand-type flash memory and nand-type flash memory controlling method
03/18/2010US20100067301 Columnar non-volatile memory devices with auxiliary transistors and methods of operating the same
03/18/2010US20100067300 Nonvolatile semiconductor memory device
03/18/2010US20100067299 Non-volatile semiconductor memory device
03/18/2010US20100067298 Flash EEprom System With Simultaneous Multiple Data Sector Programming and Storage of Physical Block Characteristics in Other Designated Blocks
03/18/2010US20100067297 Bias circuits and methods for enhanced reliability of flash memory device
03/18/2010US20100067296 Compensating for coupling during programming
03/18/2010US20100067295 Refresh Method for a Non-volatile Memory
03/18/2010DE102006028967B4 Verfahren zum Programmieren eines nichtflüchtigen Halbleiterspeicherbauelements und Verfahren zum Lesen von programmierten Speicherzellen A method for programming a nonvolatile semiconductor memory device and method for reading the programmed memory cells
03/18/2010DE102005063405B4 Speicherelement, Speicherausleseelement und Speicherzelle Storage element, memory read and memory cell element
03/17/2010EP2162931A1 An electronic device, and a method of manufacturing an electronic device
03/17/2010EP2162887A1 Electric device comprising phase change material and heating element
03/17/2010EP1532689B1 Non-volatile semiconductor memory element and corresponding production and operation method
03/17/2010CN201425840Y Cassette storage device
03/17/2010CN101675502A Nonvolatile memory cell comprising a nanowire and manufacturing method thereof
03/17/2010CN101675481A Non-volatile memory and method for compensation for voltage drops along a word line
03/17/2010CN101675479A Wear leveling
03/17/2010CN101673754A 半导体器件 Semiconductor devices
03/17/2010CN101673581A Memory system and method of accessing a semiconductor memory device
03/17/2010CN101673580A Methods of detecting a shift in the threshold voltage for a nonvolatile memory cell
03/17/2010CN101673327A 电子装置 Electronic devices
03/17/2010CN101673224A Option protection circuit for burn microcontroller
03/17/2010CN100594613C Electric device comprising phase change material
03/17/2010CN100594557C Integrated memory circuit arrangement
03/16/2010US7681094 Data recovery in a memory system using tracking cells
03/16/2010US7679967 Controlling AC disturbance while programming
03/16/2010US7679966 Flash memory device and read method thereof
03/16/2010US7679964 Semiconductor memory device controlling program voltage according to the number of cells to be programmed and method of programming the same
03/16/2010US7679963 Integrated circuit having a drive circuit
03/16/2010US7679961 Programming and/or erasing a memory device in response to its program and/or erase history
03/16/2010US7679960 Non-volatile memory device and method of operating the same
03/16/2010US7679959 Semiconductor memory device which generates voltages corresponding to a plurality of threshold voltages
03/16/2010US7679957 Redundant non-volatile memory cell
03/16/2010US7679952 Electronic circuit with a memory matrix
03/16/2010US7679429 Boost circuit
03/11/2010WO2010027983A1 Progamming data into a multi-plane flash memory
03/11/2010WO2009050703A3 Data storage in analog memory cell arrays having erase failures
03/11/2010US20100061155 Memory array segmentation and methods
03/11/2010US20100061154 Non-Volatile Dual Memory Die For Data Storage Devices
03/11/2010US20100061153 Refresh Method for a Non-volatile Memory
03/11/2010US20100061152 Method and system to access memory
03/11/2010US20100061151 Multi-pass programming for memory with reduced data storage requirement
03/11/2010US20100061150 Logged-based flash memory system and logged-based method for recovering a flash memory system
03/11/2010US20100061149 Non-Volatile Semiconductor Memory
03/11/2010US20100061148 Semiconductor memory device and data write method thereof
03/11/2010US20100061147 Reducing effects of program disturb in a memory device
03/11/2010DE102009040241A1 Verfahren und System für den Speicherzugriff A method and system for the memory access
03/11/2010DE102008045717A1 Flugfunkgerät und Verfahren mit dynamisch rekonfigurierbarer Redundanz Aeronautical mobile device and method of dynamically reconfigurable redundancy
03/10/2010EP2161723A1 Read operation for non-volatile storage with compensation for floating gate coupling
03/10/2010CN101667459A Method for automatically identifying serial EEPROM models
03/10/2010CN101667458A Method for erasing solid state disk wholly and equipment thereof
03/10/2010CN101667457A System and method for burning chips
03/10/2010CN101667456A Storage device capable of prolonging NandFlash lifespan, and tax-controlled cash register
03/10/2010CN101667455A Semiconductor memory device
03/10/2010CN101667454A Memory system and data processing method thereof
03/10/2010CN101667453A Method and system to access memory
03/09/2010US7676710 Error detection, documentation, and correction in a flash memory device
03/09/2010US7675788 Electronic non-volatile memory device having a cNAND structure and being monolithically integrated on semiconductor
03/09/2010US7675787 Two-bits per cell not-and-gate (NAND) nitride trap memory
03/09/2010US7675786 Method of operating a semiconductor memory device having a recessed control gate electrode
03/09/2010US7675784 Semiconductor memory device with dummy bit lines for charge and discharge timing
03/09/2010US7675783 Nonvolatile memory device and driving method thereof
03/09/2010US7675782 Method, system and circuit for programming a non-volatile memory array
03/09/2010US7675781 Memory device, method for operating a memory device, and apparatus for use with a memory device
03/09/2010US7675780 Program time adjustment as function of program voltage for improved programming speed in memory system
03/09/2010US7675779 Non-volatile memory devices and methods of operating the same
03/09/2010US7675778 Memory devices having reduced word line current and method of operating and manufacturing the same
03/09/2010US7675777 Non-volatile semiconductor memory device using adjacent bit lines for data transmission and method of driving the same
03/09/2010US7675776 Bit map control of erase block defect list in a memory
03/09/2010US7675774 Page buffer and multi-state nonvolatile memory device including the same
03/04/2010WO2010025058A1 Non-volatile memory and method for ramp-down programming
03/04/2010WO2010024982A1 Memory system with sectional data lines
03/04/2010WO2010024883A1 Complementary reference method for high reliability trap-type non-volatile memory
03/04/2010WO2010023529A1 Multiple performance mode memory system
03/04/2010WO2009155022A3 Hybrid memory management
03/04/2010WO2009146235A4 Compensating non-volatile storage using different pass voltages during program- verify and read
03/04/2010WO2009078006A3 Apparatus for coding at a plurality of rates in multi-level flash memory systems, and methods useful in conjunction therewith
03/04/2010WO2009072105A3 A low power chien-search based bch/rs decoding system for flash memory
03/04/2010WO2009037691A3 Programming orders for reducing distortion in arrays of multi-level analog memory cells
03/04/2010WO2009009865A8 Memory with data control
03/04/2010US20100054044 Method of operating nonvolatile memory device
03/04/2010US20100054043 Split Gate Non-Volatile Flash Memory Cell Having a Floating Gate, Control Gate, Select Gate and an Erase Gate with an Overhang Over the Floating Gate, Array and Method of Manufacturing
03/04/2010US20100054042 Semiconductor memory device and method of inspecting the same
03/04/2010US20100054041 Adjusting programming or erase voltage pulses in response to a rate of programming or erasing
03/04/2010US20100054040 Method of programming and sensing memory cells using transverse channels and devices employing same
03/04/2010US20100054039 High speed flash memory
03/04/2010US20100054037 Flash memory device with multi level cell and burst access method therein