| Patents for G11C 16 - Erasable programmable read-only memories (44,373) |
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| 02/02/2010 | US7656711 Semiconductor memory system including a plurality of semiconductor memory devices |
| 02/02/2010 | US7656710 Adaptive operations for nonvolatile memories |
| 02/02/2010 | US7656709 NAND step up voltage switching method |
| 02/02/2010 | US7656707 Systems and methods for discrete channel decoding of LDPC codes for flash memory |
| 02/02/2010 | US7656703 Method for using transitional voltage during programming of non-volatile storage |
| 02/02/2010 | US7654626 Camera device incorporating a color printer with ink validation apparatus |
| 01/28/2010 | WO2010011692A1 Methods and apparatus for programming multiple program values per signal level in flash memories |
| 01/28/2010 | WO2010010482A2 Integrated circuit |
| 01/28/2010 | US20100023680 Method for Controlling Non-Volatile Semiconductor Memory System |
| 01/28/2010 | US20100020620 Memory device and method of programming thereof |
| 01/28/2010 | US20100020619 Memory controller, memory system, recording and reproducing method for memory system, and recording apparatus |
| 01/28/2010 | US20100020618 Non-volatile memory device and memory system |
| 01/28/2010 | US20100020617 Nonvolatile semiconductor device and memory system including the same |
| 01/28/2010 | US20100020616 Soft Errors Handling in EEPROM Devices |
| 01/28/2010 | US20100020615 Clock synchronized non-volatile memory device |
| 01/28/2010 | US20100020614 Non-Volatile Memory With Linear Estimation of Initial Programming Voltage |
| 01/28/2010 | US20100020613 Starting program voltage shift with cycling of non-volatile memory |
| 01/28/2010 | US20100020612 Non-volatile semiconductor memory device |
| 01/28/2010 | US20100020611 Flash memory systems and operating methods using adaptive read voltage levels |
| 01/28/2010 | US20100020610 Integrated Circuits Having a Controller to Control a Read Operation and Methods for Operating the Same |
| 01/28/2010 | US20100020609 Flash memory device with redundant columns |
| 01/28/2010 | US20100020608 Nonvolatile semiconductor memory device |
| 01/28/2010 | US20100020607 Method and apparatus for adaptive memory cell overerase compensation |
| 01/28/2010 | US20100020606 Word line drivers in non-volatile memory device and method having a shared power bank and processor-based systems using same |
| 01/28/2010 | US20100020605 Non-volatile multilevel memory cell programming |
| 01/28/2010 | US20100020604 Shifting reference values to account for voltage sag |
| 01/28/2010 | US20100020603 Nonvolatile semiconductor memory and data writing method for nonvolatile semiconductor memory |
| 01/28/2010 | US20100020602 Non-volatile memory devices and programming methods for the same |
| 01/28/2010 | US20100020601 Multi-Bit Flash Memory Devices and Methods of Programming and Erasing the Same |
| 01/28/2010 | US20100020600 Programming method of non-volatile memory device |
| 01/28/2010 | US20100020599 Multi-level flash memory |
| 01/28/2010 | US20100020598 Semiconductor device and control method of the same |
| 01/28/2010 | US20100020214 Semiconductor device and control method of the same |
| 01/28/2010 | DE112008000750T5 NAN-Flash-Speicher mit hierarchischer Bitleitungs-und-Wortleitungs-Architektur NAN flash memory with hierarchical bit line and word line architecture |
| 01/28/2010 | DE10323400B4 Verfahren zum Löschen eines nichtflüchtigen Speichers unter Verwendung sowohl des Sourcebereichs als auch des Kanalbereichs einer Speicherzelle A method of erasing a nonvolatile memory using both the source region and the channel region of a memory cell |
| 01/28/2010 | DE10206186B4 Speichermatrix und Verfahren zur Absicherung einer Speichermatrix Memory array and method for protecting a memory array |
| 01/27/2010 | EP2148334A1 Differential flash memory programming technique |
| 01/27/2010 | EP2147461A1 Nonvolatile memory cell comprising a nanowire and manufacturing method thereof |
| 01/27/2010 | CN101636793A NAN flash memory with hierarchical bitline and wordline architecture |
| 01/27/2010 | CN101635173A Method and circuit for self calibration of non-volatile memories, and non-volatile memory circuit |
| 01/27/2010 | CN101635172A Non-volatile memory devices and programming methods for the same |
| 01/27/2010 | CN101635171A Nonvolatile semiconductor device and memory system including the same |
| 01/27/2010 | CN100585740C Flash memory apparatus and access method to flash memory |
| 01/27/2010 | CN100585739C Program verification for non-volatile memory |
| 01/27/2010 | CN100585738C Methods and circuits for programming of a semiconductor memory cell and memory array |
| 01/27/2010 | CN100585734C Memory array circuit |
| 01/26/2010 | US7653779 Memory storage using a look-up table |
| 01/26/2010 | US7652931 Nonvolatile memory device with NAND cell strings |
| 01/26/2010 | US7652930 Method, circuit and system for erasing one or more non-volatile memory cells |
| 01/26/2010 | US7652929 Non-volatile memory and method for biasing adjacent word line for verify during programming |
| 01/26/2010 | US7652928 Semiconductor memory device and control method of the same |
| 01/26/2010 | US7652927 Semiconductor memory device |
| 01/26/2010 | US7652926 Nonvolatile semiconductor memory device including a cell string with dummy cells |
| 01/26/2010 | US7652925 Flash memory device and program method thereof |
| 01/26/2010 | US7652924 Data processing circuit for contactless IC card |
| 01/26/2010 | US7652923 Semiconductor device and memory and method of operating thereof |
| 01/26/2010 | US7652922 Multiple independent serial link memory |
| 01/26/2010 | US7652921 Multi-level non-volatile memory cell with high-VT enhanced BTBT device |
| 01/26/2010 | US7652920 Semiconductor integrated circuit device |
| 01/26/2010 | US7652918 Retention margin program verification |
| 01/26/2010 | US7652917 Semiconductor device |
| 01/21/2010 | WO2010007769A1 Nonvolatile semiconductor memory element, nonvolatile semiconductor memory cell, and nonvolatile semiconductor memory device |
| 01/21/2010 | WO2009126874A3 Non-volatile multi-level re-writable memory cell incorporating a diode in series with multiple resistors and method for writing same |
| 01/21/2010 | WO2009086618A8 Nand flash memory having multiple cell substrates |
| 01/21/2010 | US20100017684 Data recovery in solid state memory devices |
| 01/21/2010 | US20100015785 Method for reducing a reset current for resetting a portion of a phase change material in a memory cell of a phase change memory device and the phase change memory device |
| 01/21/2010 | US20100014359 Operating method of non-volatile memory |
| 01/21/2010 | US20100014358 Nonvolatile memory cell, nonvolatile memory device, and method of programming the nonvolatile memory device |
| 01/21/2010 | US20100014357 Flash-based fpga with secure reprogramming |
| 01/21/2010 | US20100014356 Sense amplifier used in electrically erasable programmable read-only memory and the implementing method thereof |
| 01/21/2010 | US20100014355 Nonvolatile semiconductor memory device |
| 01/21/2010 | US20100014354 Use of recovery transistors during write operations to prevent disturbance of unselected cells |
| 01/21/2010 | US20100014353 Flash memory device with switching input/output structure |
| 01/21/2010 | US20100014352 Non-volatile memory cell read failure reduction |
| 01/21/2010 | US20100014351 Semiconductor memory having electrically erasable and programmable semiconductor memory cells |
| 01/21/2010 | US20100014350 Nand flash memory |
| 01/21/2010 | US20100014349 Programming non-volatile storage using binary and multi-state programming processes |
| 01/21/2010 | US20100014348 Circuit, System, and Method for Programming a Floating Gate |
| 01/21/2010 | DE102008007685B4 Integrierte Schaltung und Verfahren zum Betreiben einer integrierten Schaltung Integrated circuit and method for operating an integrated circuit |
| 01/21/2010 | DE102006023065B4 Flashspeicherbauelement und Programmierverfahren Flash memory device and programming method |
| 01/21/2010 | DE102004019675B4 Speicher mit Referenz-eingeleitetem sequentiellen Lesen Memory reference-initiated sequential read |
| 01/20/2010 | EP1559110B1 Control of memory arrays utilizing zener diode-like devices |
| 01/20/2010 | CN101632130A Generation of analog voltage using self-biased capacitive feedback stage |
| 01/20/2010 | CN101630532A Sensitive amplifier used for electrically erasable read only memory and realization method thereof |
| 01/20/2010 | CN101630531A Non-volatile memory devices and methods of erasing non-volatile memory devices |
| 01/20/2010 | CN101630530A Method for programming nonvolatile storage |
| 01/20/2010 | CN100583483C Phase change memory cell and manufacturing method |
| 01/20/2010 | CN100583442C Architecture for assisted-charge memory array |
| 01/20/2010 | CN100583294C Sensitive amplifier used for EEPROM and read circuit constituted of the same |
| 01/20/2010 | CN100583293C Memory device and its reading and writing method |
| 01/20/2010 | CN100583292C Memory device containing double MONOS unit and method for operating the memory device |
| 01/20/2010 | CN100583287C Addressing circuit for a cross-point memory array including cross-point resistive elements |
| 01/19/2010 | US7649786 Non-volatile memory architecture and method, in particular of the EEPROM type |
| 01/19/2010 | US7649783 Delayed activation of selected wordlines in memory |
| 01/19/2010 | US7649782 Non-volatile memory having a dynamically adjustable soft program verify voltage level and method therefor |
| 01/19/2010 | US7649781 Bit cell reference device and methods thereof |
| 01/19/2010 | US7649780 Semiconductor memory device |
| 01/19/2010 | US7649779 Integrated circuits; methods for manufacturing an integrated circuit; memory modules; computing systems |
| 01/19/2010 | US7649778 Method for accessing in reading, writing and programming to a NAND non-volatile memory electronic device monolithically integrated on semiconductor |
| 01/19/2010 | US7649777 Nonvolatile semiconductor memory cell matrix with divided write/erase, a method for operating the same, monolithic integrated circuits and systems |