Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
06/2010
06/24/2010WO2010030110A3 Nand flash memory of using common p-well and method of operating the same
06/24/2010WO2009139574A3 Memory device and method of managing memory data error
06/24/2010WO2009139567A3 Memory device and memory programming method
06/24/2010US20100157690 Semiconductor Memory Device of Single Gate Structure
06/24/2010US20100157689 Semiconductor device
06/24/2010US20100157688 Push-pull memory cell configured for simultaneous programming of n-channel and p-channel non-volatile transistors
06/24/2010US20100157687 Method for Erasing a Flash Memory Cell or an Array of Such Cells Having Improved Erase Coupling Ratio
06/24/2010US20100157686 Method and Apparatus for Programming Nonvolatile Memory
06/24/2010US20100157685 Programming in a memory device
06/24/2010US20100157684 Flash memory program inhibit scheme
06/24/2010US20100157683 Apparatus and method for reduced peak power consumption during common operation of multi-nand flash memory devices
06/24/2010US20100157682 Method of enhancing charge storage in an e2prom cell
06/24/2010US20100157681 Read, Verify Word Line Reference Voltage to Track Source Level
06/24/2010US20100157680 Semiconductor device and method of manufacturing the same
06/24/2010US20100157679 Monitor structure for monitoring a change of a memory content
06/24/2010US20100157678 Non-volatile memory with boost structures
06/24/2010US20100157677 Non-volatile semiconductor memory
06/24/2010US20100157676 Nand flash memory
06/24/2010US20100157675 Programming orders for reducing distortion in arrays of multi-level analog memory cells
06/24/2010US20100157674 Two Levels of Voltage Regulation Supplied for Logic and Data Programming Voltage of a Memory Device
06/24/2010US20100157673 Non-volatile semiconductor memory device and method of reading the same
06/24/2010US20100157672 Wordline Temperature Compensation
06/24/2010US20100157671 Data refresh for non-volatile storage
06/24/2010US20100157670 High voltage switching circuitry for a cross-point array
06/24/2010US20100157669 Floating Gate Inverter Type Memory Cell And Array
06/24/2010US20100157668 Memory device and method of operating and fabricating the same
06/24/2010DE102009057547A1 Nichtflüchtige Speichereinrichtung A non-volatile memory means
06/24/2010DE102006030758B4 Nicht-flüchtiges Speicherelement, Flash-Speicher und Verfahren zum Programmieren eines Flash-Speicherelements A non-volatile storage element, flash memory and method of programming a flash memory device
06/24/2010DE102005017298B4 Verfahren und Vorrichtung zum Schreiben eines Ablaufsprogramms in eine Speichervorrichtung einer programmgesteuerten Steuervorrichtung Method and apparatus for writing a sequence program in a memory device of a program-controlled control device
06/23/2010EP2200045A1 Method of updating contents of a multibit flash memory
06/23/2010EP2198457A2 Memory cells, electronic systems, methods of forming memory cells, and methods of programming memory cells
06/23/2010CN1942975B Memory system and method for programming non-volatile memory unit
06/23/2010CN101755307A Refresh of non-volatile memory cells based on fatigue conditions
06/23/2010CN101752001A Method for preventing contents in programmable nonvolatile memory from being mistakenly rewritten
06/23/2010CN101752000A Non-volatilization semiconductor memory and the write-in method thereof
06/23/2010CN101751999A 2T embedded FLOTOX EEPROM
06/23/2010CN101751998A 2T embedded floating gate electrically-erasable read only memory
06/23/2010CN101751997A Flash memory device and program/erase method of the same
06/23/2010CN101751996A Nonvolatile memory
06/23/2010CN101751995A Storage device with flash memory and storage method of flash memory
06/23/2010CN101751994A Nonvolatile semiconductor memory device having uniform operational characteristics for memory cells
06/22/2010US7743290 Status of overall health of nonvolatile memory
06/22/2010US7743203 Managing flash memory based upon usage history
06/22/2010US7742344 Method and apparatus for improving storage performance using a background erase
06/22/2010US7742343 Metal oxide semiconductor device and method for operating an array structure comprising the same devices
06/22/2010US7742342 Biasing circuit for EEPROM memories with shared latches
06/22/2010US7742341 Semiconductor memory device and related programming method
06/22/2010US7742340 Read reference technique with current degradation protection
06/22/2010US7742339 Rd algorithm improvement for NROM technology
06/22/2010US7742337 Semiconductor memory
06/22/2010US7742336 Trap-charge non-volatile switch connector for programmable logic
06/22/2010US7742335 Non-volatile multilevel memory cells
06/22/2010US7742334 Nonvolatile semiconductor memory device for writing multivalued data
06/22/2010US7742330 Semiconductor device
06/17/2010WO2010068674A2 A method for programming and erasing an array of nmos eeprom cells that minimizes bit disturbances and voltage withstand requirements for the memory array and supporting circuits
06/17/2010WO2010068323A1 Adaptive erase and soft programming for memory
06/17/2010WO2010068221A1 Memristive device
06/17/2010WO2010067361A1 Method and device of managing a reduced wear memory
06/17/2010US20100153628 Method of fabricating systems including heat-sensitive memory devices
06/17/2010US20100153625 Semiconductor memory device
06/17/2010US20100149888 Reduced signal interface memory device, system, and method
06/17/2010US20100149882 Methods of Operating Embedded Flash Memory Devices
06/17/2010US20100149880 Window enlargement by selective erase of non-volatile memory cells
06/17/2010US20100149879 Flash memory array of floating gate-based non-volatile memory cells
06/17/2010US20100149878 Flotox type eeprom
06/17/2010US20100149877 Flash memory device and read method
06/17/2010US20100149876 Reverse Reading In Non-Volatile Memory With Compensation For Coupling
06/17/2010US20100149875 Nonvolatile Semiconductor Memory Device
06/17/2010US20100149874 Non-volatile memory apparatus and method with deep n-well
06/17/2010US20100149873 Push-pull fpga cell
06/17/2010US20100149872 Nonvolatile memory device and method for operating the same
06/17/2010US20100149871 Reading method of nonvolatile semiconductor memory device
06/17/2010US20100149870 Non-volatile semiconductor memory, and the method thereof
06/17/2010US20100149869 Multi-level cell flash memory device and read method
06/17/2010US20100149868 Access method of non-volatile memory device
06/17/2010US20100149867 Nonvolatile semiconductor memory device
06/17/2010US20100149866 Systems and Devices Including Memory Resistant to Program Disturb and Methods of Using, Making, and Operating the Same
06/17/2010DE102009058348A1 Nichtflüchtige Speichereinrichtung A non-volatile memory means
06/17/2010DE102009057356A1 Programmieren von nichtflüchtigen Speichern Programming of nonvolatile memories
06/17/2010DE102008061093A1 Method for realizing access to flash-memory in parameterisable device for operating servo motor of drive system, involves configuring sections of computer-executable program relevant to memory access by program based on read data
06/16/2010EP2195810A1 System and method of writing data in a flash memory on the basis of additional removable contact pads
06/16/2010EP1946324B1 Method for controlled programming of non-volatile memory exhibiting bit line coupling
06/16/2010CN1918659B High voltage driver circuit with fast reading operation
06/16/2010CN1855304B Integrated circuit device, flash memory array and method for operating flash memory
06/16/2010CN1722302B Memory device for storing multi-bit information accroding to resistor state
06/16/2010CN1677565B Method and device for conducting cache memory reading
06/16/2010CN1617261B Flash memory pipelined burst read operation circuit, method and system
06/16/2010CN1555064B Nonvolatile semiconductor memory device
06/16/2010CN1494086B Bimetal oxide-nitride-oxide bit line array addressing, reading, sequencing method and apparatus
06/16/2010CN101743598A Dynamic voltage adjustment for memory
06/16/2010CN101740129A Nonvolatile memory device and read method thereof
06/16/2010CN101740128A Nonvolatile semi-conductor memory device and method for calculating read voltage non-volatile semiconductor memory device
06/16/2010CN101740127A Methods of programming non-volatile memory devices and memory devices programmed thereby
06/16/2010CN101740126A Memory and method applied in one program command for the memory
06/16/2010CN101740125A Read-write methods of NAND type flash memory and relevant page buffer thereof
06/16/2010CN101740124A Page buffer circuit for electrically rewritable non-volatile semiconductor memory device and control method
06/16/2010CN101740123A Data protection method of memory
06/16/2010CN101740122A Nonvolatile semiconductor storage device
06/16/2010CN101740121A Phase change random access memory
06/16/2010CN101740120A Programming method for shared-word line split-gate type flash memory