Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
12/2009
12/24/2009US20090316481 Reading electronic memory utilizing relationships between cell state distributions
12/24/2009US20090316480 Methods of storing multiple data-bits in a non-volatile memory cell
12/24/2009US20090316479 Semiconductor memory device capable of lowering a write voltage
12/24/2009US20090316478 Semiconductor memory device
12/24/2009DE102009019095A1 Integrierter Schaltkreis, Herstellungverfahren, Speichermodul und Computersystem An integrated circuit manufacturing process, memory module and computer system
12/24/2009DE102008002494A1 Method for actualizing flash memory for emulation of electrically EPROMs, for saving serial electrically EPROMs, in dashboard of vehicle, involves verifying actual version of data set to violation of defined rule
12/23/2009WO2009155540A1 Charge pumps with controlled ramp rate
12/23/2009WO2009154799A1 An apparatus and method for inhibiting excess leakage current in unselected nonvolatile memory cells in an array
12/23/2009WO2009154738A1 Row-decoder and select gate decoder structures suitable for flashed-based eeprom operating below +/-10v bvds
12/23/2009WO2009154674A1 Dynamic pass voltage
12/23/2009WO2009153781A1 Reverse order page writing in flash memories
12/23/2009WO2009153679A1 Method of and system for controlling the programming of memory devices
12/23/2009WO2009153262A1 Control system
12/23/2009WO2009135143A3 Localized calibration of programmable digital logic cells
12/23/2009WO2009120275A3 Phase change memory
12/23/2009EP2136397A1 Flotox type eeprom
12/23/2009EP2135253A1 Partial block erase architecture for flash memory
12/23/2009EP2135252A2 Non-volatile memory and method for predictive programming
12/23/2009CN101611454A ID generation apparatus and method for serially interconnected devices
12/23/2009CN101611386A Method of writing data into semiconductor memory and memory controller
12/23/2009CN101609710A Sense amplifier circuit and data sensing method thereof
12/23/2009CN100573953C Resistor type memory element operation method
12/23/2009CN100573951C Phase-change storage device and its making method
12/23/2009CN100573898C Self-aligned planerized bottom electrode phase change memory and manufacturing method
12/23/2009CN100573726C Self-testing IC based on 3D memorizer
12/23/2009CN100573722C Method for reading a memory array
12/23/2009CN100573721C Reading circuit for flash memory device operating at low power supply voltage
12/23/2009CN100573720C Programming method of flash memory device
12/23/2009CN100573719C Semiconductor device and writing method
12/23/2009CN100573718C Semiconductor memory device capable of high-speed cache read operation
12/23/2009CN100573717C High voltage switch circuit having boosting circuit and flash memory device including the same
12/23/2009CN100573716C Dual cell reading and writing technique
12/23/2009CN100573715C Flash memory devices with flash fuse cell arrays
12/23/2009CN100573714C Rewriting non-volatile memory, electronic device and rewriting method
12/22/2009US7636263 Semiconductor memory having function to determine semiconductor low current
12/22/2009US7636258 Integrated circuits, memory controller, and memory modules
12/22/2009US7636256 Semiconductor memory device
12/22/2009US7636255 Non-volatile semiconductor memory
12/22/2009US7636254 Wordline booster circuit and method of operating a wordline booster circuit
12/22/2009US7636252 Nonvolatile memory with a unified cell structure
12/17/2009WO2009152037A2 Nonvolatile memory and method for correlated multiple pass programming
12/17/2009WO2009151933A2 Method of storing data on a flash memory device
12/17/2009WO2009151894A1 Nonvolatile memory and method with index programming and reduced verify
12/17/2009WO2009150767A1 Nonvolatile semiconductor memory device and signal processing system
12/17/2009WO2009150608A1 Phase change memory device and control method
12/17/2009US20090313423 Multi-bit flash memory device and method of analyzing flag cells of the same
12/17/2009US20090310427 Eeprom devices and methods of operating and fabricating the same
12/17/2009US20090310426 Semiconductor memory device
12/17/2009US20090310425 Memory devices including vertical pillars and methods of manufacturing and operating the same
12/17/2009US20090310424 Method of erasing a flash eeprom memory
12/17/2009US20090310423 Method of programming and erasing a non-volatile memory array
12/17/2009US20090310422 Non-volatile semiconductor storage device
12/17/2009US20090310421 Nonvolatile Memory with Correlated Multiple Pass Programming
12/17/2009US20090310420 Method for Correlated Multiple Pass Programming in Nonvolatile Memory
12/17/2009US20090310418 Method for Index Programming and Reduced Verify in Nonvolatile Memory
12/17/2009US20090310417 Semiconductor integrated circuit
12/17/2009US20090310416 Selective threshold voltage verification and compaction
12/17/2009US20090310415 Non-volatile memory devices including vertical nand strings and methods of forming the same
12/17/2009US20090310414 NAND string based NAND/NOR flash memory cell, array, and memory device having parallel bit lines and source lines, having a programmable select gating transistor, and circuits and methods for operating same
12/17/2009US20090310413 Reverse order page writing in flash memories
12/17/2009US20090310412 Methods of data management in non-volatile memory devices and related non-volatile memory systems
12/17/2009US20090310411 Row-decoder and source-decoder structures suitable for erase in unit of page, sector and chip of a NOR-type flash operating below +/- 10V BVDS
12/17/2009US20090310410 Nonvolatile semiconductor memory device
12/17/2009US20090310409 Nonvolatile Semiconductor Memory
12/17/2009US20090310408 Memory system and method of accessing a semiconductor memory device
12/17/2009US20090310407 Sensing against a reference cell
12/17/2009US20090310406 M+l bit read column architecture for m bit memory cells
12/17/2009US20090310405 Row-decoder and select gate decoder structures suitable for flashed-based EEPROM operating below +/-10v BVDS
12/17/2009US20090310404 Memory device and method of controlling read level
12/17/2009DE102006008872B4 Nichtflüchtiges Halbleiterspeicherbauelement, Programmierverfahren und Leseverfahren A non-volatile semiconductor memory device programming method and reading method
12/16/2009EP2132750A1 Rectifying element for a crosspoint based memory array architecture
12/16/2009EP2132749A1 Non-volatile memory and method for cache page copy
12/16/2009EP2132748A1 Decoding control with address transition detection in page erase function
12/16/2009CN101604728A Phase-change memorizer device and manufacture method thereof
12/16/2009CN101604550A Mobile storage device with automatic playing function of advertisements and playing method thereof
12/16/2009CN101604291A Method for improving data access reliability of non-volatile memory of multistage cell
12/16/2009CN100570897C Method for improving non-volatile memory data erasing velocity
12/16/2009CN100570749C Method for determining logic states of memory unit of flash memory
12/16/2009CN100570748C On-chip EE-PROM programming waveform generation
12/16/2009CN100570747C Phase-change memory
12/16/2009CN100570740C Semiconductor memory device
12/15/2009US7634695 Test apparatus and selection apparatus
12/15/2009US7634612 Method of recording and reproducing information
12/15/2009US7634493 Editing apparatus and editing method
12/15/2009US7633826 Semiconductor device, nonvolatile semiconductor memory, system including a plurality of semiconductor devices or nonvolatile semiconductor memories, electric card including semiconductor device or nonvolatile semiconductor memory, and electric device with which this electric card can be used
12/15/2009US7633814 Memory device and method of operating such
12/15/2009US7633813 Method of performing an erase operation in a non-volatile memory device
12/15/2009US7633812 Starting program voltage shift with cycling of non-volatile memory
12/15/2009US7633811 Non-volatile memory embedded in a conventional logic process and methods for operating same
12/15/2009US7633810 Non-volatile memory embedded in a conventional logic process and methods for operating same
12/15/2009US7633808 Flash memories with adaptive reference voltages
12/15/2009US7633807 Behavior based programming of non-volatile memory
12/15/2009US7633806 Memory device with a nonvolatile memory array
12/15/2009US7633804 Adjusting programming or erase voltage pulses in response to the number of programming or erase failures
12/15/2009US7633803 Methods of operating memory devices including negative incremental step pulse programming and related devices
12/15/2009US7633801 Memory in logic cell
12/15/2009US7633800 Redundancy scheme in memory
12/15/2009US7633799 Method combining lower-endurance/performance and higher-endurance/performance information storage to support data processing
12/15/2009US7633798 M+N bit programming and M+L bit read for M bit memory cells
12/15/2009US7633797 Flash memory and method for determining logic states thereof