Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
09/2010
09/15/2010CN101079426B Structure and method of sub-gate AND architectures employing bandgap engineered SONOS devices
09/15/2010CN101042936B Programmable non-volatile memory device and method for testing and operating same
09/14/2010US7797597 Error detection, documentation, and correction in a flash memory device
09/14/2010US7796448 Trigger circuit of a column redundant circuit and related column redundant device
09/14/2010US7796444 Concurrent programming of non-volatile memory
09/14/2010US7796442 Nonvolatile semiconductor memory device and method of erasing and programming the same
09/14/2010US7796441 Method of reading configuration data in flash memory device
09/14/2010US7796440 NAND flash memory device and method of programming the same
09/14/2010US7796438 Flash memory device and method of programming the same
09/14/2010US7796437 Voltage regulator with reduced sensitivity of output voltage to change in load current
09/14/2010US7796436 Reading method for MLC memory and reading circuit using the same
09/14/2010US7796435 Method for correlated multiple pass programming in nonvolatile memory
09/14/2010US7796434 Non-volatile memory device and method of operating the same
09/14/2010US7796433 Apparatus for reducing the impact of program disturb
09/14/2010US7796432 Non-volatile memory device and method of operating the same
09/14/2010US7796431 Page buffer used in a NAND flash memory and programming method thereof
09/14/2010US7796430 Non-volatile memory using multiple boosting modes for reduced program disturb
09/14/2010US7796429 Memory controller controlling semiconductor storage device and semiconductor device
09/14/2010US7796425 Control of set/reset pulse in response to peripheral temperature in PRAM device
09/14/2010US7794738 Compositions and methods for enhancing corticosteroid delivery
09/10/2010WO2010099597A1 Nand flash architecture with multi-level row decoding
09/10/2010WO2010068674A3 A method for programming and erasing an array of nmos eeprom cells that minimizes bit disturbances and voltage withstand requirements for the memory array and supporting circuits
09/10/2010CA2754062A1 Nand flash architecture with multi-level row decoding
09/09/2010US20100228907 Method of evenly using a plurality of blocks of a flash memory, and associated memory device and controller thereof
09/09/2010US20100226183 Partial block erase architecture for flash memory
09/09/2010US20100226182 Methods of forming and operating nand memory with side-tunneling
09/09/2010US20100226181 Array Of Non-volatile Memory Cells Including Embedded Local And Global Reference Cells And System
09/09/2010US20100226180 Memory array and method of operating a memory
09/09/2010US20100226179 Nand flash architecture with multi-level row decoding
09/09/2010US20100226178 Apparatus and methods for correcting over-erased flash memory cells
09/09/2010US20100226177 Non-volatile multilevel memory cells
09/09/2010US20100226176 Method for Non-Volatile Memory With Background Data Latch Caching During Read Operations
09/09/2010US20100226175 Memory devices and methods of writing data to memory devices utilizing analog voltage levels
09/09/2010US20100226174 Multiple bit per cell non volatile memory apparatus and system having polarity control and method of programming same
09/09/2010US20100226173 Nonvolatile Semiconductor Memory Device
09/09/2010US20100226172 Method of reading data and method of inputting and outputting data in non-volatile memory device
09/09/2010US20100226171 Method of programming nonvolatile memory device
09/09/2010US20100226170 Non-volatile Memory Array Having Circuitry To Complete Programming Operation In The Event Of Power Interrupt
09/09/2010DE102009011255A1 Ausleseschaltung für wieder beschreibbare Speicher und Ausleseverfahren für dieselben Readout circuit for rewritable memory and selection procedure for the same
09/08/2010EP2226810A1 Data whitening for writing and reading data to and from a non-volatile memory
09/08/2010EP2226809A1 Addressing, command protocol, and electrical interface for non-volatile memories utilized in recording usage counts
09/08/2010EP2225760A1 Low noise sense amplifier array and method for nonvolatile memory
09/08/2010EP2225759A1 A controller for a multiple bit per cell nand flash memory for emulating a single bit per cell nand flash memory
09/08/2010EP2225648A1 Semiconductor memory device
09/08/2010EP2225644A1 Method, device and data structure for data storage on memory devices
09/08/2010EP2225643A1 Semiconductor storage device
09/08/2010CN201576462U Solar charging USB flash disk
09/08/2010CN201573796U Burning braider
09/08/2010CN1855510B Integrated circuit memory and method of operating same
09/08/2010CN101828237A Sensing of memory cells in NAND flash
09/08/2010CN101826531A Semiconductor memory unit, driving method thereof and semiconductor memory
09/08/2010CN101826526A Semiconductor memory unit, driving method thereof and semiconductor memory
09/08/2010CN101826366A Memory array and method of operating a memory
09/08/2010CN101390196B Gate-coupled EPROM cell for printhead
09/08/2010CN101350223B Non-volatile memory and operating method thereof
09/08/2010CN101295545B Methods for operating double-side-biasing and non-memory arrays
09/08/2010CN101281951B Thin-film material and method for manufacturing non-volatility resistor random memory
09/08/2010CN101246950B Memory element with reduced-current phase change element
09/08/2010CN101237026B Memory device and its manufacture method
09/08/2010CN101167139B Method and apparatus for incorporating block redundancy in a memory array
09/07/2010US7793192 Semiconductor memory device
09/07/2010US7791956 Method and system for simultaneous reads of multiple arrays
09/07/2010US7791954 Dynamic erase state in flash device
09/07/2010US7791953 Fast erasable non-volatile memory
09/07/2010US7791952 Memory device architectures and operation
09/07/2010US7791950 Inverter non-volatile memory cell and array system
09/07/2010US7791949 Refresh method for a non-volatile memory
09/07/2010US7791948 Channel carrier discharging in a NAND flash memory on an insulating substrate or layer
09/07/2010US7791947 Non-volatile memory device and methods of using
09/07/2010US7791946 Semiconductor device and method for controlling a semiconductor device
09/07/2010US7791944 Voltage reference generator for flash memory
09/07/2010US7791942 Methods of operating nonvolatile memory devices
09/07/2010US7791940 Integrated circuit with switching unit for memory cell coupling, and method for producing an integrated circuit for memory cell coupling
09/07/2010US7791939 Non-volatile memory device
09/07/2010US7791938 MSB-based error correction for flash memory system
09/07/2010US7789501 Printing cartridge for a printer
09/02/2010WO2010097302A1 Memory reading method taking care of resistance drift effects
09/02/2010WO2010096901A1 Stacked semiconductor devices including a master device
09/02/2010WO2010080437A3 Memory cell comprising a diode connected to at least three resistivity-switching elements and methods of fabricating and reading the same
09/02/2010US20100220533 Non-diffusion junction split-gate nonvolatile memory cells and arrays, methods of programming, erasing, and reading thereof, and methods of manufacture
09/02/2010US20100220532 Readout Circuit for Rewritable Memories and Readout Method for Same
09/02/2010US20100220531 Semiconductor integrated circuit
09/02/2010US20100220530 Circuits, systems and methods for driving high and low voltages on bit lines in non-volatile memory
09/02/2010US20100220529 Non-volatile memory device
09/02/2010US20100220528 Nand with back biased operation
09/02/2010US20100220527 Non-volatile FIFO with third dimension memory
09/02/2010US20100220526 Nonvolatile memory device, system, and programming method
09/02/2010US20100220525 Non-volatile memory device and erase and read methods thereof
09/02/2010DE102010007001A1 System und Verfahren zum Erstellen eines Multi-Write-Fehlerkorrekturcodes System and method for creating a multi-write error-correcting codes
09/02/2010DE102010006139A1 System und Verfahren zur Finalisierung eines Halbleiterspeichers System and method for finalizing a semiconductor memory
09/01/2010EP2224330A1 Method for processing data
09/01/2010EP2223420A1 Multi-regulator power delivery system for asic cores
09/01/2010EP2223304A1 Regulation of source potential to combat cell source ir drop
09/01/2010EP2223303A1 Read, verify word line reference voltage to track source level
09/01/2010EP2223302A1 Dual function compatible non-volatile memory device
09/01/2010EP2223301A1 Non-volatile semiconductor memory device with power saving feature
09/01/2010EP1269474B1 Symmetrical protection scheme for first and last sectors of synchronous flash memory
09/01/2010CN201570024U Reconfigurable SoC based on field programmable logic
09/01/2010CN101821812A Memory device program window adjustment
09/01/2010CN101821811A Non-equal threshold voltage ranges in mlc NAND
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