Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
07/2010
07/22/2010US20100182837 Magnetic floating gate memory
07/22/2010US20100182836 Nonvolatile memory having plurality of memory blocks each including data storage area and discrimination area
07/22/2010US20100182835 Block decoder of flash memory device
07/22/2010US20100182834 Twisted data lines to avoid over-erase cell result coupling to normal cell result
07/22/2010US20100182833 Memory and boundary searching method thereof
07/22/2010US20100182832 Non-volatile multilevel memory cell programming
07/22/2010US20100182831 Non-Volatile Memory And Method With Reduced Neighboring Field Errors
07/22/2010US20100182830 Nonvolatile memory device and method of operating the same
07/22/2010US20100182821 Memory device, memory circuit and semiconductor integrated circuit having variable resistance
07/22/2010DE19882312B4 Nicht-flüchtiger Speicher mit einer selbstkonfigurierenden 1,8- und 3,0-V-Schnittstellenarchitektur Non-volatile memory with a self-configuring 1.8 and 3.0-V interface architecture
07/21/2010EP2078303B1 Reading of a nonvolatile memory cell by taking account of the stored state of a neighboring memory cell
07/21/2010EP2022058B1 Maintenance operations for multi-level data storage cells
07/21/2010EP1969603B1 Sonos memory device with reduced short-channel effects
07/21/2010EP1829045B1 Pipelined programming of non-volatile memories using early data
07/21/2010EP1733398B1 Circuit for accessing a chalcogenide memory array
07/21/2010CN101783389A Resistive random access memory with asymmetric electrical properties
07/21/2010CN101783180A Circuit for generating correcting signals
07/21/2010CN101783179A Erasing method for improving durability of grid-split flash memory
07/21/2010CN101783178A Non-volatile semiconductor memory, and the method thereof
07/21/2010CN101783177A Programming method of non volatile memory device
07/21/2010CN101783176A Non volatile memory device and operating metho thereof
07/21/2010CN101783175A Providing a ready-busy signal from a non-volatile memory device to a memory controller
07/21/2010CN101783174A Non volatile memory device and operating method thereof
07/21/2010CN101783173A Nonvolatile memory device and programming method and verifying method using nonvolatile memory device thereof
07/21/2010CN101783171A Burst write method for phase change memory
07/21/2010CN101383337B Programmable phase change material structure and its forming method
07/21/2010CN101364634B Semiconductor device
07/21/2010CN101355030B Method for manufacturing memory, memory device as well as method for operating and accessing the memory device
07/21/2010CN101339973B Reverse bias voltage induced double stable state nonvolatile semiconductor memory
07/21/2010CN101211658B Method and apparatus for adjusting a read reference level under dynamic power conditions
07/21/2010CN101188140B Resistive memory including bipolar transistor access devices and its manufacture method
07/20/2010US7760555 Tracking cells for a memory system
07/20/2010US7760554 NROM non-volatile memory and mode of operation
07/20/2010US7760553 Fuse circuit and flash memory device having the same
07/20/2010US7760551 Method of programming nonvolatile memory device
07/20/2010US7760550 Methods of reading data from non-volatile semiconductor memory device
07/20/2010US7760549 Nonvolatile semiconductor memory device
07/20/2010US7759727 Method and apparatus for shielding tunneling circuit and floating gate for integration of a floating gate voltage reference in a general purpose CMOS technology
07/15/2010WO2010080674A1 Sensing circuit and method with reduced susceptibility to spatial and temperature variations
07/15/2010WO2010080437A2 Quad memory cell and method of making same
07/15/2010WO2010080334A1 Programming a memory cell with a diode in series by applying reverse bias
07/15/2010WO2010080332A1 Method of programming a nonvolatile memory device containing a carbon storage material
07/15/2010WO2010080185A1 Data refresh for non-volatile storage
07/15/2010US20100177579 Semiconductor memory device having faulty cells
07/15/2010US20100177570 Semiconductor memory device capable of compensating variation with time of program voltage
07/15/2010US20100177569 Single poly eeprom allowing continuous adjustment of its threshold voltage
07/15/2010US20100177568 Read mode for flash memory
07/15/2010US20100177567 Nonvolatile semiconductor memory device which can electrically rewrite data and system therefor
07/15/2010US20100177566 Non-volatile memory device having stacked structure, and memory card and electronic system including the same
07/15/2010US20100177565 Method of operating a flash memory device
07/15/2010US20100177564 Method for detecting flash program failures
07/15/2010US20100177563 Nonvolatile semiconductor memory, method for reading out thereof, and memory card
07/15/2010DE102009052546A1 Halbleiterbauelement mit Bitleitungsstrukturen und Layout-Verfahren Semiconductor component with bit line and layout methods
07/15/2010DE102009040448A1 Halbleitervorrichtung mit mehreren Betriebsmodi A semiconductor device having multiple operating modes
07/15/2010DE102006036147B4 Zeilendecoder und zugehöriges Halbleiterspeicherbauelement Row decoder and related semiconductor memory device
07/14/2010EP1859450B1 Control of a memory matrix with resistance hysteresis elements
07/14/2010CN201527871U Adsorption structure for flash storage device
07/14/2010CN1560869B Safety digital storage card
07/14/2010CN101779250A Intelligent control of program pulse duration
07/14/2010CN101779249A Programmable chip enable and chip address in semiconductor memory
07/14/2010CN101779247A Reducing power consumption during read operations in non-volatile storage
07/14/2010CN101777572A Semiconductor memory structure and control method thereof
07/14/2010CN101777389A System and method for obtaining phase-change memory unit phase-change zone radius
07/14/2010CN101777388A Method for obtaining phase-change memory phase-change resistance crystallization rate
07/14/2010CN101777385A Determining method of PCRAM reading bias voltage
07/14/2010CN101777384A Sensing circuit applied to a programmable resistance type memory material
07/14/2010CN101777383A Data burning connecting device of general double-contact selenium drum chip
07/14/2010CN101777382A Column decoder of multiple programmable flash memory
07/14/2010CN101777381A Flash memory and method for operating data in flash memory
07/14/2010CN101777380A Method for setting pcram devices
07/14/2010CN101211314B Flash memory data reading-writing life-span upgrading method
07/14/2010CN101122865B Computer mainboard quick suspending and recovery device using phase-change memory
07/13/2010US7755950 Programming methods of memory systems having a multilevel cell flash memory
07/13/2010US7755949 Reset circuit for termination of tracking circuits in self timed compiler memories
07/13/2010US7755948 Process and temperature tolerant non-volatile memory
07/13/2010US7755947 Nonvolatile semiconductor memory
07/13/2010US7755946 Data state-based temperature compensation during sensing in non-volatile memory
07/13/2010US7755945 Page buffer and method of programming and reading a memory
07/13/2010US7755944 Semiconductor memory device
07/13/2010US7755942 Memory cell array and semiconductor memory
07/13/2010US7755941 Nonvolatile semiconductor memory device
07/13/2010US7755940 Method, apparatus, and system for erasing memory
07/13/2010US7755939 System and devices including memory resistant to program disturb and methods of using, making, and operating the same
07/13/2010US7755938 Method for reading a memory array with neighbor effect cancellation
07/13/2010US7753463 Processing of images for high volume pagewidth printing
07/08/2010WO2010078483A1 Capacitor block comprising capacitors that can be connected to each other and method for charging and discharging the capacitors to write a phase change material memory
07/08/2010WO2010078467A1 Modulation of resistivity in carbon-based read-writeable materials
07/08/2010WO2010077965A1 Non-volatile memory and method for sensing with pipelined corrections for neighboring perturbations
07/08/2010WO2010077846A1 Non-volatile memory and method with continuous scanning time-domain sensing
07/08/2010WO2010077528A1 Regulation of recovery rates in charge pumps
07/08/2010WO2010077414A1 Non-volatile memory device for concurrent and pipelined memory operations
07/08/2010WO2010077408A1 Pattern-sensitive coding of data for storage in multi-level memory cells
07/08/2010WO2010076834A1 Reliable set operation for phase-change memory cell
07/08/2010WO2010076833A1 Word-line driver including pull-up resistor and pull-down transistor
07/08/2010WO2010076829A1 Wear leveling for erasable memories
07/08/2010WO2010076828A1 Non-volatile memory with extended operating temperature range
07/08/2010WO2010076826A1 Temperature alert and low rate refresh for a non-volatile memory
07/08/2010WO2010076600A1 Enhanced addressability for serial non-volatile memory
07/08/2010WO2010076599A1 Non-volatile configuration for serial non-volatile memory
07/08/2010WO2010076598A1 Excute-in-place mode configuration for serial non-volatile memory
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