Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
06/2010
06/16/2010CN101740119A Memory cell using SONOS transistor as gate tube
06/16/2010CN101740097A Data transmitting system
06/16/2010CN101739584A Semiconductor device
06/16/2010CN101471421B Dyadic transition group metallic oxide non-volatilization electric resistance transition type memory
06/16/2010CN101412794B Polymeric / carbon nano-tube composite flash memory material with side chain containing carbazole, synthetic method and use
06/16/2010CN101335327B Method for controlling phase-change material or phase-change memory unit volume change and corresponding construction
06/16/2010CN101246742B Electronic device and its data transmission method
06/16/2010CN101241926B Programmable phase change material structure and its forming method
06/16/2010CN101194323B Selective application method and system of program inhibit schemes in non-volatile memory
06/16/2010CN101174471B Method for setting programming start bias for flash memory device and programming method using the same
06/16/2010CN101118779B Electrical resistance bias canceling circuit and electrical resistance compensation process using same
06/16/2010CN101067969B Method and structure for reliable data copy operation for non-volatile memories
06/16/2010CN101057299B Concurrent programming of non-volatile memory
06/16/2010CN101015060B Shield plate for limiting cross coupling between floating gates
06/15/2010US7738304 Multiple use memory chip
06/15/2010US7738302 Semiconductor memory device with stores plural data in a cell
06/15/2010US7738298 Flash memory device
06/15/2010US7738297 Method and apparatus for controlling two or more non-volatile memory devices
06/15/2010US7738296 Method for reading nonvolatile memory at power-on stage
06/15/2010US7738294 Programming multilevel cell memory arrays
06/15/2010US7738293 Apparatus and method of memory programming
06/15/2010US7738292 Flash memory with multi-bit read
06/15/2010US7738291 Memory page boosting method, device and system
06/10/2010WO2010030692A3 Multi-pass programming for memory with reduced data storage requirement
06/10/2010US20100146228 Memory system and control method thereof
06/10/2010US20100142285 Reducing read failure in a memory device
06/10/2010US20100142284 Deterministic-based programming in memory
06/10/2010US20100142283 Program method with optimized voltage level for flash memory
06/10/2010US20100142282 Method of programming flash memory device
06/10/2010US20100142281 Non-Volatile Memory Device and Program Method Thereof
06/10/2010US20100142280 Programming memory devices
06/10/2010US20100142279 Nonvolatile semiconductor memory device having assist gate
06/10/2010US20100142278 Page buffer circuit, nonvolatile device including the same, and method of operating the nonvolatile memory device
06/10/2010US20100142277 Page buffer circuit, nonvolatile memory device including the page buffer circuit, and method of operating the nonvolatile memory device
06/10/2010US20100142276 Nonvolatile memory
06/10/2010US20100142275 Continuous address space in non-volatile-memories (nvm) using efficient management methods for array deficiencies
06/10/2010US20100142274 Multilevel memory cell operation
06/10/2010US20100142273 Programming methods for multi-level memory devices
06/10/2010US20100142272 Method and apparatus for testing the connectivity of a flash memory chip
06/10/2010US20100142271 Semiconductor memory device capable of preventing a shift of threshold voltage
06/10/2010US20100142270 Semiconductor memory device and semiconductor memory system storing multilevel data
06/10/2010US20100142269 Memory employing redundant cell array of multi-bit cells
06/10/2010US20100142268 Programming method to reduce gate coupling interference for non-volatile memory
06/10/2010US20100142267 Memory cell shift estimation method and apparatus
06/10/2010US20100142266 Vertical field-effect transistor
06/10/2010US20100142251 Memory devices having programmable elements with accurate operating parameters stored thereon
06/10/2010DE102008061098A1 Non-volatile memory unit, particularly flash memory for use in program module of parameter device of drive system, comprises memory access unit for realization of sequential memory accesses, where memory is realized
06/10/2010DE102008061094A1 Method for determining memory region of e.g. serial flash memory to describe characteristics of memory in servomotor operating device of drive system, involves determining address of memory region at which read memory content is stored
06/10/2010DE102008061091A1 Method for execution of sequential data access on memory, particularly on flash memory by machine-readable program, involves realizing sequential access on memory by interface
06/09/2010CN1967461B Electric device with readable stored data
06/09/2010CN1938784B Semiconductor nonvolatile storage circuit
06/09/2010CN1628940B 袖珍式工具 Pocket Tools
06/09/2010CN1551241B 非易失性半导体存储器件 The nonvolatile semiconductor memory device
06/09/2010CN101728482A Method for manufacturing phase-change semiconductor device and phase-change semiconductor device
06/09/2010CN101728481A Method for manufacturing phase-change semiconductor device and phase-change semiconductor device
06/09/2010CN101728480A Resistance type random access memory structure and manufacturing method thereof
06/09/2010CN101727986A Nonvolatile memory device, memory system having its, proramming method thereof, and precharg voltage boosting method thereof
06/09/2010CN101727985A Storage device and method for performing single valued flash function by using multi-value flash memory
06/09/2010CN101727984A Online programming adaptor for universal programmer
06/09/2010CN101727983A Memory device and program method thereof
06/09/2010CN101727982A Resistance variable memory device performing program and verification operation
06/09/2010CN101727981A Nonvolatile memory device recoverying oxide layer and block management method thereof
06/09/2010CN101727980A 多芯片模块 A multi-chip module
06/09/2010CN101727979A Semiconductor storage device
06/09/2010CN101727978A Method for writing and reading data in an electrically erasable and programmable nonvolatile memory
06/09/2010CN101727977A Flash memory device having memory cell string of dummy transistor
06/09/2010CN101727976A Multi-layer flash-memory device, a solid hard disk and a truncation non-volatile memory system
06/09/2010CN101727975A Programmable resistance memory with diode structure
06/09/2010CN101727416A Multichip parallel program burning system
06/09/2010CN101727396A Memory management method for nonvolatile memory and controller thereof
06/09/2010CN101308703B Method for nrom array word line retry erasing and threshold voltage recovering
06/09/2010CN101257087B Phase change memory cell with filled sidewall memory element and method for fabricating the same
06/09/2010CN101236786B Method for programming multi-level cell memory array
06/09/2010CN101221815B Method, apparatus for resetting phase change memory unit
06/09/2010CN101221810B Gated diode nonvolatile memory operation
06/09/2010CN101211663B Variable program and program verification method for a virtual ground memory
06/09/2010CN101105976B Method and apparatus for reading data from nonvolatile memory
06/09/2010CN101097781B Apparatus and method for determining data validity of the same
06/09/2010CN101013703B Array structure for assisted-charge memory devices
06/08/2010US7734880 Flash memory system compensating reduction in read margin between memory cell program states
06/08/2010US7734866 Memory with address-differentiated refresh rate to accommodate low-retention storage rows
06/08/2010US7734862 Block management for mass storage
06/08/2010US7733729 Thermally stable reference voltage generator for MRAM
06/08/2010US7733711 Circuit and method for optimizing memory sense amplifier timing
06/08/2010US7733706 Flash memory device and erase method thereof
06/08/2010US7733704 Non-volatile memory with power-saving multi-pass sensing
06/08/2010US7733703 Method for non-volatile memory with background data latch caching during read operations
06/08/2010US7733702 Semiconductor memory device and method of erasing data therein
06/08/2010US7733701 Reading non-volatile storage with efficient setup
06/08/2010US7733699 Mimicking program verify drain resistance in a memory device
06/08/2010US7733698 Memory device, a non-volatile semiconductor memory device and a method of forming a memory device
06/08/2010US7733697 Programmable NAND memory
06/08/2010US7733695 Non-volatile memory device and method of operation therefor
06/08/2010US7733694 Nonvolatile semiconductor memory having a floating gate electrode formed within a trench
06/03/2010WO2010061333A1 Methods, apparatuses, and computer program products for enhancing memory erase functionality
06/03/2010WO2010042365A3 Architecture and method for memory programming
06/03/2010US20100138606 Method for Controlling Non-Volatile Semiconductor Memory System
06/03/2010US20100135085 Multi-level memory cell utilizing measurement time delay as the characteristic parameter for level definition
06/03/2010US20100135084 Wordline voltage transfer apparatus, systems, and methods
06/03/2010US20100135083 Nonvolatile memory device
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