Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
07/2010
07/08/2010WO2010043032A8 A composite memory having a bridging device for connecting discrete memory devices to a system
07/08/2010US20100172189 Non-volatile semiconductor storage device
07/08/2010US20100172188 Method for conducting over-erase correction
07/08/2010US20100172187 Robust sensing circuit and method
07/08/2010US20100172186 Programming and/or erasing a memory device in response to its program and/or erase history
07/08/2010US20100172185 Method for Operating a Flash Memory Device
07/08/2010US20100172184 Asymmetric Single Poly NMOS Non-Volatile Memory Cell
07/08/2010US20100172183 Method and Apparatus to Suppress Fringing Field Interference of Charge Trapping NAND Memory
07/08/2010US20100172182 Nonvolatile memory device and method for operating the same
07/08/2010US20100172181 Page buffer circuit for electrically rewritable non-volatile semiconductor memory device and control method
07/08/2010US20100172180 Non-Volatile Memory and Method With Write Cache Partitioning
07/08/2010US20100172179 Spare Block Management of Non-Volatile Memories
07/08/2010US20100172178 Semiconductor device manufacturing method and semiconductor integrated circuit device
07/08/2010US20100172177 Memory device having sub-bit lines and memory system
07/08/2010US20100172176 Semiconductor Device, a Method of Using a Semiconductor Device, a Programmable Memory Device, and Method of Producing a Semiconductor Device
07/08/2010US20100172175 Memory device and method having charge level assignments selected to minimize signal coupling
07/08/2010DE102006024655B4 Speicherkarte und Speichersteuereinheit Memory card and memory controller
07/07/2010EP2204817A1 Non-volatile memory with ovonic threshold switches
07/07/2010EP2204815A1 Method of storing an indication of whether a memory location in phase change memory needs programming
07/07/2010EP2203919A1 Multiple antifuse memory cells and methods to form, program, and sense the same
07/07/2010CN1697082B Method for programming phase-change memory array to set state and circuit of a phase-change memory device
07/07/2010CN101772809A Method and circuit for preventing high voltage memory disturb
07/07/2010CN101770990A Semiconductor memory cell, method for manufacturing the same and method for operating the same
07/07/2010CN101770810A Semiconductor apparatus having a plurality of action modes
07/07/2010CN101770809A Recovery for non-volatile memory after power loss
07/07/2010CN101770807A Write optimization circuit for phase change memory and write optimization method thereof
07/07/2010CN101267004B Storage unit structure and its operation method
07/07/2010CN101123117B Non volatile memory device and its operation method
07/06/2010US7751259 Semiconductor memory device having a plurality of chips and capability of outputting a busy signal
07/06/2010US7751255 Semiconductor nonvolatile memory device
07/06/2010US7751253 Analog sensing of memory cells with a source follower driver in a semiconductor memory device
07/06/2010US7751252 Semiconductor memory with a reference current generating circuit having a reference current generating section and an amplifier section
07/06/2010US7751250 Memory device with power noise minimization during sensing
07/06/2010US7751249 Minimizing power noise during sensing in memory device
07/06/2010US7751247 Method and apparatus for trimming reference voltage of flash memory device
07/06/2010US7751246 Charge loss compensation during programming of a memory device
07/06/2010US7751245 Programming sequence in NAND memory
07/06/2010US7751244 Applying adaptive body bias to non-volatile storage based on number of programming cycles
07/06/2010US7751240 Memory device with negative thresholds
07/06/2010US7751238 Memory system protected from errors due to read disturbance and reading method thereof
07/06/2010US7751236 MEM suspended gate non-volatile memory
07/06/2010US7750431 Phase change storage cells for memory devices
07/06/2010US7750389 NROM memory cell, memory array, related devices and methods
07/06/2010US7750334 Phase change memory device
07/01/2010WO2010074819A1 Controlled data access to non-volatile memory
07/01/2010WO2010074353A1 Memory system and method of controlling memory system
07/01/2010WO2010074352A1 Memory system, method of controlling memory system, and information processing apparatus
07/01/2010WO2010045000A3 Hot memory block table in a solid state storage device
07/01/2010WO2010044999A3 Translation layer in a solid state storage device
07/01/2010US20100165748 Erase completion recognition
07/01/2010US20100165747 Non-volatile memory cell healing
07/01/2010US20100165746 Semiconductor memory cell, method for manufacturing the same and method for operating the same
07/01/2010US20100165745 Non-volatile memory device and driving method thereof
07/01/2010US20100165744 Semiconductor memory device
07/01/2010US20100165743 Non-Volatile Memory And Method With Continuous Scanning Time-Domain Sensing
07/01/2010US20100165742 Methods and circuits for generating a high voltage and related semiconductor memory devices
07/01/2010US20100165741 Dynamic pass voltage
07/01/2010US20100165740 Nonvolatile semiconductor memory capable of trimming an initial program voltage for each word line
07/01/2010US20100165739 Non-volatile multilevel memory cell programming
07/01/2010US20100165738 Non-Volatile Memory And Method For Sensing With Pipelined Corrections For Neighboring Perturbations
07/01/2010US20100165737 Electromechanical memory devices and methods of manufacturing the same
07/01/2010US20100165736 Flash memory device and manufacturing method of the same
07/01/2010US20100165735 Nonvolatile semiconductor memory
07/01/2010US20100165734 System and method for data recovery in a disabled integrated circuit
07/01/2010US20100165733 Nand nonvolatile semiconductor memory
07/01/2010US20100165732 Flash memory apparatus and read operation control method therefor
07/01/2010US20100165731 Memory device and operating method
07/01/2010US20100165730 Reading memory cells using multiple thresholds
07/01/2010DE102009051339A1 Speichersystem und Speicherverfahren Storage system, and storage procedures
07/01/2010DE102009050641A1 Überwachungsstruktur zum Überwachen einer Änderung eines Speicherinhalts Monitoring structure for monitoring a change of memory content
07/01/2010DE102006034498B4 Karte mit integriertem Schaltkreis und Verfahren zum Verbessern der Schreib-/Leselebensdauer von nicht-flüchtigem Speicher An integrated circuit and method for improving the read / write life of non-volatile memory
07/01/2010DE102005036555B4 Programmieren programmierbarer resistiver Speichervorrichtungen Programming of programmable resistive memory devices
06/2010
06/30/2010EP2201573A1 Sensing of memory cells in nand flash
06/30/2010EP2201572A1 Post-facto correction for cross coupling in a flash memory
06/30/2010EP2047474B1 Floating gate memory with compensating for coupling during programming
06/30/2010CN101765888A Programming based on controller performance requirements
06/30/2010CN101764135A Semiconductor memory device of single gate structure
06/30/2010CN101763898A Non-volatile semiconductor memory
06/30/2010CN101763897A Method and apparatus for protection of non-volatile memory in presence of out-of-specification operating voltage
06/30/2010CN101763896A Method for realizing SONOS memory cell write-operation by channel hot electron
06/30/2010CN101763895A Data storage device and data storage system having the same
06/30/2010CN101763894A Semiconductor storage device and storage controlling method
06/30/2010CN101763893A Single tube SONOS NOR-type memory
06/30/2010CN101763892A Wiring structure of single tube SONOS NOR-type rapid flash memory cell
06/29/2010US7746715 Erase and read schemes for charge trapping non-volatile memories
06/29/2010US7746707 Nonvolatile semiconductor memory device
06/29/2010US7746706 Methods and systems for memory devices
06/29/2010US7746705 Selective application of word line bias to minimize fringe effects in electromagnetic fields during erase of nonvolatile memory
06/29/2010US7746704 Program-and-erase method for multilevel nonvolatile memory
06/29/2010US7746703 Flash memory device and method of programming flash memory device
06/29/2010US7746700 NAND architecture memory devices and operation
06/29/2010US7746699 Non-volatile memory read-check
06/29/2010US7746698 Programming in memory devices using source bitline voltage bias
06/29/2010US7746697 Nonvolatile semiconductor memory
06/29/2010US7746694 Nonvolatile memory array having modified channel region interface
06/29/2010US7746693 Nonvolatile analog memory
06/29/2010US7746691 Methods and apparatus utilizing predicted coupling effect in the programming of non-volatile memory
06/29/2010US7746125 High voltage driver circuit with fast slow voltage operation
06/24/2010WO2010069660A1 Improved flash rom programming
06/24/2010WO2010069076A1 Semiconductor device with main memory unit and auxiliary memory unit requiring preset operation
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