Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
03/2010
03/30/2010US7688635 Current sensing for Flash
03/30/2010US7688634 Method of operating an integrated circuit having at least one memory cell
03/30/2010US7688633 Method for programming a memory device suitable to minimize floating gate coupling and memory device
03/30/2010US7688632 Nonvolatile semiconductor memory capable of trimming an initial program voltage for each word line
03/30/2010US7688631 Flash memory device for variably controlling program voltage and method of programming the same
03/30/2010US7688630 Programming memory devices
03/30/2010US7688629 Flash memory including reduced swing amplifiers
03/30/2010US7688628 Device selection circuit and method
03/30/2010US7688627 Flash memory array of floating gate-based non-volatile memory cells
03/30/2010US7688625 Circuit arrangement and method for operating a circuit arrangement
03/30/2010US7688612 Bit line structure for a multilevel, dual-sided nonvolatile memory cell array
03/30/2010US7687848 Memory utilizing oxide-conductor nanolaminates
03/25/2010WO2010033975A2 Programming a memory device to increase data reliability
03/25/2010WO2010033880A2 Memory architecture having two independently controlled voltage pumps
03/25/2010WO2010033409A1 Data state-based temperature compensation during sensing in non-volatile memory
03/25/2010WO2010033388A1 Sensing for memory read and program verify operations in a non-volatile memory device
03/25/2010WO2010032998A2 A method to recover the lsb page in a multilevel cell flash memory device
03/25/2010US20100077266 Memory system and control method thereof
03/25/2010US20100075467 Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
03/25/2010US20100074029 Nonvolatile semiconductor memory device and operation method thereof
03/25/2010US20100074028 Memory Architecture Having Two Independently Controlled Voltage Pumps
03/25/2010US20100074027 High second bit operation window method for virtual ground array with two-bit memory cells
03/25/2010US20100074026 Flash memory device and systems and reading methods thereof
03/25/2010US20100074025 Nonvolatile Memory Devices Having Erased-State Verify Capability and Methods of Operating Same
03/25/2010US20100074024 Programming a memory device to increase data reliability
03/25/2010US20100074023 Semiconductor device having non-volatile memory and method of fabricating the same
03/25/2010US20100074022 Memory and method for programming the same
03/25/2010US20100074021 Nand flash memory programming
03/25/2010US20100074020 Charge pump operation in a non-volatile memory device
03/25/2010US20100074019 Memory card, semiconductor device, and method of controlling memory card
03/25/2010US20100074018 Read operation for non-volatile storage with compensation for coupling
03/25/2010US20100074017 Method for Programming Nand Type Flash Memory
03/25/2010US20100074016 Data retention of last word line of non-volatile memory arrays
03/25/2010US20100074015 Sensing for memory read and program verify operations in a non-volatile memory device
03/25/2010US20100074014 Data state-based temperature compensation during sensing in non-volatile memory
03/25/2010US20100074013 Semiconductor Device and Method of Fabricating the Same
03/25/2010US20100074012 Least significant bit page recovery method used in multi-level cell flash memory device
03/25/2010US20100074011 Non-volatile memory device and page buffer circuit thereof
03/25/2010US20100074010 Memory device reference cell programming method and apparatus
03/25/2010US20100074009 Quad+bit storage in trap based flash design using single program and erase entity as logical cell
03/25/2010US20100074008 Sector configure registers for a flash device generating multiple virtual ground decoding schemes
03/25/2010US20100074007 Flash mirror bit architecture using single program and erase entity as logical cell
03/25/2010US20100074006 Dynamic erase state in flash device
03/25/2010US20100074005 Eeprom emulation in flash device
03/25/2010US20100074004 High vt state used as erase condition in trap based nor flash cell design
03/25/2010US20100073431 Nozzle Structure With Reciprocating Cantilevered Thermal Actuator
03/25/2010US20100072286 Semiconductor device and driving method of the same
03/25/2010DE112008001126T5 Verschleißausgleich Wear compensation
03/25/2010DE102006028209B4 Verfahren zum Löschen von Speicherzellen einer Flash-Speichereinrichtung und Halbleiterspeichereinrichtung A method of erasing memory cells of a Flash memory device and semiconductor memory device
03/24/2010EP2166456A1 Method and apparatus for performing wear leveling in memory
03/24/2010EP2165338A1 Coarse/fine program verification in non-volatile memory using different reference levels for improved sensing
03/24/2010EP2074628B1 A secure non-volatile memory device and a method of protecting data therein
03/24/2010EP1969602B1 Phase change memory materials, devices and methods
03/24/2010CN201429988Y Butted and transferred U-disk
03/24/2010CN101681920A Variable resistance memory with lattice array using enclosing transistors
03/24/2010CN101681679A Non-volatile multilevel memory cells with data read of reference cells
03/24/2010CN101681678A Delta sigma sense amplifier comprising digital filters and memory
03/24/2010CN101681677A Partial block erase architecture for flash memory
03/24/2010CN101681676A Phase change memory structure with multiple resistance states and methods of programming and sensing same
03/24/2010CN101681668A Division-based sensing and partitioning of electronic memory
03/24/2010CN101681321A Solid state memory utilizing analog communication of data values
03/24/2010CN101681316A Memory system
03/24/2010CN101681313A 存储器系统 Memory system
03/24/2010CN101681312A 存储器系统 Memory system
03/24/2010CN101681311A Memory system
03/24/2010CN101681307A Memory system
03/24/2010CN101677081A Phase change memory cell array with self-converged bottom electrode and method for manufacturing
03/24/2010CN101677080A Memory cell array manufacture method and memory device
03/24/2010CN101677020A Flash memory device and systems and reading methods thereof
03/24/2010CN101677019A Production line reading method and system of flash memory
03/24/2010CN101677018A Secrecy system of memory and secrecy method for reading in memory burn mode
03/24/2010CN101677017A Operation method of non-volatile memory cells in a memory array
03/24/2010CN100595923C Control method of integrated semiconductor non-volatile memory device
03/23/2010US7685357 Multilevel storage nonvolatile semiconductor memory device enabling high-speed data reading and high-speed data writing
03/23/2010US7684276 Techniques for configuring memory systems using accurate operating parameters
03/23/2010US7684261 Semiconductor apparatus
03/23/2010US7684256 Flash memory device and program method
03/23/2010US7684255 Method of operating a non-volatile memory device
03/23/2010US7684254 Flash memory device and method of erasing memory cell block in the same
03/23/2010US7684253 Flash memory device having a function for reducing data input error and method of inputting the data in the same
03/23/2010US7684251 Non-volatile semiconductor memory device and its writing method
03/23/2010US7684250 Flash memory device with reduced coupling effect among cells and method of driving the same
03/23/2010US7684249 Programming methods for multi-level memory devices
03/23/2010US7684248 Method for measuring threshold voltage of SONOS flash device
03/23/2010US7684247 Reverse reading in non-volatile memory with compensation for coupling
03/23/2010US7684246 Flash memory device having pump with multiple output voltages
03/23/2010US7684245 Non-volatile memory array architecture with joined word lines
03/23/2010US7684244 High density non-volatile memory array
03/23/2010US7684243 Reducing read failure in a memory device
03/23/2010US7684242 Flash memory device and method of operating the same
03/23/2010US7684241 Flash memory devices having multi-page copyback functionality and related block replacement methods
03/23/2010US7684240 Flash memory device having bit lines decoded in irregular sequence
03/23/2010US7684239 Flash memory device for over-sampling read and interfacing method thereof
03/23/2010US7684237 Reading non-volatile multilevel memory cells
03/23/2010US7683424 Ballistic direct injection NROM cell on strained silicon structures
03/23/2010US7683360 Horizontal chalcogenide element defined by a pad for use in solid-state memories
03/23/2010US7682907 Non-volatile memory integrated circuit
03/23/2010CA2375586C Reprogrammable secure software in an embedded processor
03/18/2010WO2010030701A1 Built in on-chip data scrambler for non-volatile memory
03/18/2010WO2010030692A2 Multi-pass programming for memory with reduced data storage requirement
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