Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
02/2010
02/16/2010US7663931 Word line driving method of semiconductor memory device
02/16/2010US7663928 Sense amplifier circuit having current mirror architecture
02/16/2010US7663927 Reading voltage generator for a non-volatile EEPROM memory cell matrix of a semiconductor device and corresponding manufacturing process
02/16/2010US7663926 Cell deterioration warning apparatus and method
02/16/2010US7663925 Method and apparatus for programming flash memory
02/16/2010US7663923 Semiconductor memory device and control method thereof
02/16/2010US7663922 Non-volatile semiconductor memory devices with lower and upper bit lines sharing a voltage control block, and memory cards and systems having the same
02/16/2010US7663921 Flash memory array with a top gate line dynamically coupled to a word line
02/16/2010US7663920 Memory system and data reading and generating method
02/16/2010US7663919 Semiconductor memory device capable of increasing writing speed
02/16/2010US7663915 Nonvolatile memory
02/16/2010US7663914 Method of programming a multi bit flash memory device to avoid programming errors and a device implementing the same
02/16/2010US7663912 Non-volatile memory device and method of fabricating the same
02/16/2010US7663907 Die customization using programmable resistance memory elements
02/16/2010US7662686 Semiconductor device and a method of manufacturing the same
02/11/2010WO2010017013A1 Compensating for coupling during read operations in non-volatile storage
02/11/2010US20100034028 Method for driving nonvolatile semiconductor memory device
02/11/2010US20100034027 Method for programming a nonvolatile memory
02/11/2010US20100034026 Erase method and non-volatile semiconductor memory
02/11/2010US20100034025 Non-volatile semiconductor storage system
02/11/2010US20100034023 Nonvolatile semiconductor memory element, nonvolatile semiconductor memory, and method for operating nonvolatile semiconductor memory element
02/11/2010US20100034022 Compensating for coupling during read operations in non-volatile storage
02/11/2010US20100034021 Method of controlling operation of flash memory device
02/11/2010US20100034020 Semiconductor memory device including charge storage layer and control gate
02/11/2010US20100034019 Systems and methods for performing a program-verify process on a nonvolatile memory by selectively pre-charging bit lines associated with memory cells during the verify operations
02/11/2010US20100034018 Accessing memory using fractional reference voltages
02/11/2010DE102009034836A1 Verfahren und Vorrichtung zum Speichern von Daten in einem Festkörperspeicher Method and apparatus for storing data in a solid-state memory
02/11/2010DE102009033961A1 Emulation eines einmal programmierbaren Speichers Emulation of a one-time programmable memory
02/11/2010DE102004063690B4 Nicht-volatiles Speicherbauelement vom SONOS-Typ mit leitendem Seitenwand-Spacer und Verfahren zur Herstellung desselben Of the same non-volatile memory device of SONOS type with conductive sidewall spacers and methods for making
02/10/2010EP2150958A1 Multi-level cell access buffer with dual function
02/10/2010EP2150896A1 Method for memory management
02/10/2010EP1864292B1 Erasing non-volatile memory utilizing changing word line conditions to compensate for slower frasing memory cells
02/10/2010CN201402611Y Solid-state disk
02/10/2010CN201402610Y Flash disc used for fiscal data backup
02/10/2010CN201402609Y 磁盘阵列 Disk Array
02/10/2010CN101645307A Flash memory programming
02/10/2010CN101645306A Control method for nonvolatile memory and semiconductor device
02/10/2010CN100589207C Charge pump output high-pressure control device
02/10/2010CN100589206C Method for judging whether a memory data unit is erased and processing a memory data unit
02/10/2010CN100589205C Charge trapping memory structure and programming method thereof
02/10/2010CN100589204C Memory unit, memory system and integrated circuit and method for configurating ready/busy signals
02/10/2010CN100589203C Management of unusable block in non-volatile memory system
02/09/2010US7660168 Read operation of multi-port memory device
02/09/2010US7660166 Method of improving programming precision in flash memory
02/09/2010US7660165 Memory device and semiconductor device
02/09/2010US7660163 Method and unit for verifying initial state of non-volatile memory device
02/09/2010US7660162 Circuit for measuring current in a NAND flash memory
02/09/2010US7660161 Integrated flash memory systems and methods for load compensation
02/09/2010US7660160 Flash memory device and method of operating the same
02/09/2010US7660159 Method and device for programming control information
02/09/2010US7660158 Programming method to reduce gate coupling interference for non-volatile memory
02/09/2010US7660156 NAND flash memory with a programming voltage held dynamically in a NAND chain channel region
02/09/2010US7660154 Level verification and adjustment for multi-level cell (MLC) non-volatile memory (NVM)
02/04/2010WO2010013979A1 Device and method for protecting data in non-volatile memory
02/04/2010WO2010013081A1 Reversing a potential polarity for reading phase-change cells to shorten a recovery delay after programming
02/04/2010US20100030943 Semiconductor Memory
02/04/2010US20100027353 Erase Method of Flash Device
02/04/2010US20100027352 Non-volatile semiconductor memory device
02/04/2010US20100027351 Memory device and memory programming method
02/04/2010US20100027350 Flash memory programming and verification with reduced leakage current
02/04/2010US20100027349 current sensing scheme for non-volatile memory
02/04/2010US20100027348 Program method of flash memory device
02/04/2010US20100027347 Three-Terminal Single Poly NMOS Non-Volatile Memory Cell
02/04/2010US20100027346 Asymmetric Single Poly NMOS Non-Volatile Memory Cell
02/04/2010US20100027345 Erasable non-volatile memory device using hole trapping in high-k dielectrics
02/04/2010US20100027344 Semiconductor memory device
02/04/2010US20100027343 Non-Volatile Memory Monitor
02/04/2010US20100027342 Memory device and memory data determination method
02/04/2010US20100027341 Nonvolatile semiconductor memory device and nonvolatile semiconductor memory system
02/04/2010US20100027340 Pattern dependent string resistance compensation
02/04/2010US20100027339 Page buffer and method of programming and reading a memory
02/04/2010US20100027338 Semiconductor device and a manufacturing method thereof
02/04/2010US20100027337 Nonvolatile memory device extracting parameters and nonvolatile memory system including the same
02/04/2010US20100027336 Non-volatile memory device and associated programming method using error checking and correction (ECC)
02/04/2010US20100027335 Memory device and wear leveling method
02/04/2010US20100027334 Eeprom charge retention circuit for time measurement
02/04/2010US20100027333 Nonvolatile Semiconductor Memory Device
02/04/2010US20100027332 Flash memory programming
02/04/2010US20100027331 Memory and reading method thereof
02/04/2010US20100025659 Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
02/04/2010DE102009031310A1 Speichersystem, Leseverstärker, Verwendung und Verfahren zur Fehlerdetektion mittels Parity-Bits eines Blockcodes Storage system, sense amplifiers, use and method for error detection using parity bits of a block code
02/04/2010DE102004030283B4 Speichervorrichtung mit mehrstufigem Leseverstärker Storage device with multi-stage sense amplifier
02/03/2010CN201397686Y 储存装置 Storage device
02/03/2010CN101640073A Memory and reading method thereof
02/03/2010CN101640072A Program method of flash memory device
02/03/2010CN101640071A Memory device and memory programming method
02/03/2010CN101640070A Semiconductor memory device
02/03/2010CN101640069A Average wear method, storage system and controller used for flash memory
02/03/2010CN101640068A Non-volatile semiconductor memory device
02/03/2010CN101640067A Operation methods for memory cell and array for reducing punch through leakage
02/03/2010CN100587847C Synthetic method for protecting television data
02/03/2010CN100587846C Non-volatile memory with improved erasing operation
02/03/2010CN100587845C Semiconductor memory device only using single-channel transistor to apply voltage to selected word line
02/03/2010CN100587844C Nonvolatile latch and data storage method thereof
02/03/2010CN100587841C Non-volatile memory device and programming method thereof
02/03/2010CN100587838C Memory with charge storage locations
02/02/2010US7657877 Method for processing data
02/02/2010US7657702 Partial block data programming and reading operations in a non-volatile memory
02/02/2010US7656721 Semiconductor device
02/02/2010US7656714 Bitline bias circuit and nor flash memory device including the bitline bias circuit
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