Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
05/2010
05/25/2010US7724568 Memory device having read cache
05/20/2010WO2010056551A2 Systems and methods for erasing a memory
05/20/2010WO2010056504A2 Erase voltage reduction in a non-volatile memory device
05/20/2010WO2010056259A1 A bit line gate transistor structure for a multilevel, dual-sided nonvolatile memory cell nand flash array
05/20/2010WO2010054670A1 Method and device for temperature-based data refresh in non-volatile memories
05/20/2010WO2010054478A1 Solid state drive or other storage apparatus that includes a plurality of encapsulated semiconductor chips
05/20/2010US20100125701 Multi-Level Non-Volatile Memory Device, Memory System Including the Same, and Method of Operating the Same
05/20/2010US20100125429 Automatic word line leakage measurement circuitry
05/20/2010US20100124135 Semiconductor memory devices having hierarchical bit-line structures
05/20/2010US20100124128 Nand flash memory
05/20/2010US20100124127 Systems and methods for erasing a memory
05/20/2010US20100124126 Erase voltage reduction in a non-volatile memory device
05/20/2010US20100124125 Nonvolatile semiconductor memory device
05/20/2010US20100124124 Nonvolatile memory device and method of programming the same
05/20/2010US20100124123 Nonvolatile Memory Device with Incremental Step Pulse Programming
05/20/2010US20100124122 Method of operating nonvolatile memory device
05/20/2010US20100124121 Method of erasing flash memory device
05/20/2010US20100124120 Nonvolatile memory device
05/20/2010US20100124119 Nonvolatile Memory Device and Read Methods Thereof
05/20/2010US20100124118 Bit line gate transistor structure for a multilevel, dual-sided nonvolatile memory cell NAND flash array
05/20/2010US20100124117 Nonvolatile semiconductor memory
05/20/2010US20100124116 Non-volatile semiconductor storage device
05/20/2010US20100124115 Program and sense operations in a non-volatile memory device
05/20/2010US20100124114 Semiconductor Device and Layout Method for the Semiconductor Device
05/20/2010US20100124113 Semiconductor memory write method
05/20/2010US20100124112 Nonvolatile semiconductor storage device
05/20/2010US20100124111 Nonvolatile semiconductor memory device and method for operating the same
05/20/2010US20100124110 Semiconductor storage device
05/20/2010US20100124109 Semiconductor memory device for storing multi level data
05/20/2010US20100124108 Programming methods and memories
05/20/2010US20100124107 Nonvolatile memory device and method of operating the same
05/19/2010EP2186096A1 Control gate line architecture
05/19/2010CN201477890U Cd-rom recorder
05/19/2010CN1988040B Non-volatile memory and method for operating and manufacturing non-volatile memory
05/19/2010CN101711415A Non-volatile memory and method for improved sensing having bit-line lockout control
05/19/2010CN101711414A Non-volatile memory and method for predictive programming
05/19/2010CN101711413A Non-volatile storage with individually controllable shield plates between storage elements
05/19/2010CN101236782B Operation method for multi-level memory unit and integrated circuit for information storage
05/19/2010CN101154450B A method for programming a NAND flash memory device
05/19/2010CN101154449B Flash memory device and its reading method
05/19/2010CN101101963B A high status ratio inorganic film dual stabilization part and its making method
05/19/2010CN101013598B Three-level nonvolatile semiconductor memory device and associated method of operation
05/19/2010CN101000802B Method and apparatus for operating memory
05/18/2010US7719902 Enhanced bit-line pre-charge scheme for increasing channel boosting in non-volatile storage
05/18/2010US7719900 Semiconductor storage device having memory cell for storing data by using difference in threshold voltage
05/18/2010US7719899 Circuits, systems and methods for driving high and low voltages on bit lines in non-volatile memory
05/18/2010US7719897 Program verification for non-volatile memory
05/18/2010US7719896 Configurable single bit/dual bits memory
05/18/2010US7719894 Method of programming cells of a NAND memory device
05/18/2010US7719892 Flash memory device with data output control
05/18/2010US7719891 Non-volatile memory device
05/18/2010US7719890 Data protection for write abort
05/18/2010US7719888 Memory device having a negatively ramping dynamic pass voltage for reducing read-disturb effect
05/18/2010US7719871 Methods of operating and manufacturing logic device and semiconductor device including complementary nonvolatile memory device, and reading circuit for the same
05/18/2010US7719870 Storage device
05/18/2010US7718488 Process of fabricating flash memory with enhanced program and erase coupling
05/14/2010WO2010053749A1 Preventing unintended permanent write-protection in nonvolatile memory
05/14/2010WO2010053593A1 Configurable digital and analog input/output interface in a memory device
05/14/2010WO2010051621A1 Bridge device having a virtual page buffer
05/14/2010WO2010033975A3 Programming a memory device to increase data reliability
05/13/2010US20100118613 Method of erasing data in flash memory device
05/13/2010US20100118612 Semiconductor memory device and read access method thereof
05/13/2010US20100118611 Delayed activation of selected wordlines in memory
05/13/2010US20100118610 Nonvolatile semiconductor memory device
05/13/2010US20100118609 Nonvolatile semiconductor memory, and method for reading data
05/13/2010US20100118608 Non-volatile memory device, memory card and system, and method determining read voltage in same
05/13/2010US20100118607 Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell
05/13/2010US20100118606 Methods of programming non-volatile memory devices and memory devices programmed thereby
05/13/2010US20100118605 Semiconductor storage device adapted to prevent erroneous writing to non-selected memory cells
05/13/2010US20100118604 Non-volatile semiconductor memory device having non-selected word lines adjacent to selected word lines being charged at different timing for program disturb control
05/12/2010EP2184741A1 EEPROM memory protected against the effects of MOS transistor breakdown
05/12/2010EP2183749A1 Enhanced write abort mechanism for non-volatile memory
05/12/2010EP2183747A1 Memory with data control
05/12/2010EP1952404B1 Method and memory system for legacy hosts
05/12/2010DE102008056710A1 Portable data medium e.g. smart card, operating method for e.g. mobile telephone, involves detecting output of warning for user via terminal by data medium in case that rate of wear exceeds predetermined threshold
05/12/2010DE102008003637B4 Integrierter Schaltkreis, Verfahren zum Programmieren einer Speicherzellen-Anordnung eines Integrierten Schaltkreises, und Speichermodul An integrated circuit, method for programming a memory cell array of an integrated circuit, and memory module
05/12/2010DE10084982B4 Steuern einer Burst-Sequenz in synchronen Speichern Controlling a burst sequence in synchronous Save
05/12/2010CN201465572U Mistake-proof read-write memory
05/12/2010CN1967896B Insulated phase change memory device and method for manufacturing the same
05/12/2010CN1963946B Non-volatile memory device
05/12/2010CN1937078B Multi-operation mode nonvolatile memory
05/12/2010CN1909113B Method and apparatus for sensing a state of a memory cell
05/12/2010CN1897160B Semiconductor device including memory cells and current limiter
05/12/2010CN1897156B Phase change random access memory (PRAM) device having variable drive voltages
05/12/2010CN1881592B Methods of programming silicon oxide nitride oxide semiconductor (SONOS) memory devices
05/12/2010CN1862705B Non-volatile semiconductor memory and method for writing data into a non-volatile semiconductor memory
05/12/2010CN1851825B Efficient storage and relating method
05/12/2010CN1848438B Recovery method of NAND flash memory device
05/12/2010CN1848299B Reference current generating circuit of nonvolatile semiconductor memory device
05/12/2010CN1832202B Memory cell, flash memory array and operating method of the same
05/12/2010CN1764983B System and method for programming cells in non-volatile integrated memory devices
05/12/2010CN1684195B High voltage generating circuit preserving charge pumping efficiency
05/12/2010CN1655186B Semiconductor device
05/12/2010CN1591356B Methods and circuits for programming electronic devices
05/12/2010CN1533575B Process and system for correcting data during chip card transaction based on card
05/12/2010CN101131873B Storing card access control chip with spread spectrum clock
05/12/2010CN101095197B NAND-eeprom with reduction of floating gate to floating gate coupling effect
05/12/2010CN101042924B Method and apparatus for determining the time of flash memory element sensing
05/12/2010CN101030623B Non-volatile memory device having two oxide layers
05/11/2010US7716538 Memory with cell population distribution assisted read margining
1 ... 115 116 117 118 119 120 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 ... 444