Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008) |
---|
01/31/2013 | US20130028038 Information processing system including semiconductor device having self-refresh mode |
01/31/2013 | US20130028037 Information processing system including semiconductor device having self-refresh mode |
01/31/2013 | US20130028034 Information processing system including semiconductor device having self-refresh mode |
01/31/2013 | US20130028016 Memory Cells and Methods of Storing Information |
01/31/2013 | US20130028015 Magnetic memory cell structure with improved read margin |
01/31/2013 | US20130028014 Reference voltage generators and sensing circuits |
01/31/2013 | US20130028013 Magnetoresistive effect element, magnetic memory cell using same, and random access memory |
01/31/2013 | US20130028012 Semiconductor integrated circuit and processor |
01/31/2013 | US20130028011 Magnetoresistive device and magnetic memory |
01/31/2013 | US20130028010 Fast MTJ Switching Write Circuit For MRAM Array |
01/31/2013 | US20130028009 Non-volatile memory saving cell information in a non-volatile memory array |
01/31/2013 | US20130028008 Integrated circuits, systems, and methods for reducing leakage currents in a retention mode |
01/31/2013 | US20130028006 Static random access memory structure and control method thereof |
01/31/2013 | US20130028005 Resistive memory array and method for controlling operations of the same |
01/31/2013 | US20130028004 Refreshing memristive systems |
01/31/2013 | US20130028003 Nonvolatile memory device having a current limiting element |
01/31/2013 | US20130027079 Field programmable gate array utilizing two-terminal non-volatile memory |
01/31/2013 | DE19964449B4 Integrierte Halbleiterschaltung A semiconductor integrated circuit |
01/31/2013 | DE19603107B4 Selbst-Voralterungsschaltung für Halbleiterspeicher Self-Voralterungsschaltung for semiconductor memories |
01/31/2013 | DE10346928B4 Verzögerungseinstellungsschaltung Delay adjustment circuit |
01/31/2013 | DE10332601B4 Schaltung und Verfahren zur Steuerung eines Zugriffs auf einen integrierten Speicher Circuit and method for controlling an access to an integrated memory |
01/31/2013 | DE102006059816B4 Dynamisches Multipegelspeicherbauelement und Verfahren zum Treiben eines dynamischen Multipegelspeicherbauelements Dynamic multi-level memory device and method for driving a dynamic multi-level memory device |
01/31/2013 | DE102006026970B4 Integrierter Halbleiterspeicher mit taktgesteuertem Speicherzugriff und Verfahren zum Betreiben eines integrierten Halbleiterspeichers Integrated semiconductor memory having memory access taktgesteuertem and method for operating an integrated semiconductor memory, |
01/31/2013 | DE102006024960B4 Signalverzögerungsschleife und Verfahren zum Einrasten einer Signalverzögerungsschleife Signal delay loop and method for latching a signal delay loop |
01/31/2013 | DE10108922B4 Elektronische Speicheranordnung Electronic storage device |
01/30/2013 | EP2551905A2 SRAM with driver transistor distributed over different active areas |
01/30/2013 | EP2550660A1 Simultaneous multi-state read or verify in non-volatile storage |
01/30/2013 | EP2550659A1 Low-power 5t sram with improved stability and reduced bitcell size |
01/30/2013 | EP2550658A1 Multi-port non-volatile memory that includes a resistive memory element |
01/30/2013 | EP2550657A1 Reference cell write operations in a memory |
01/30/2013 | EP2550656A1 Multiple instruction streams memory system |
01/30/2013 | CN102906820A Programming non-volatile storage with synchronized coupling |
01/30/2013 | CN102906819A 半导体存储装置 The semiconductor memory device |
01/30/2013 | CN102903719A 半导体器件 Semiconductor devices |
01/30/2013 | CN102903386A Static random memory unit |
01/30/2013 | CN102903385A 半导体集成电路和处理器 The semiconductor integrated circuit and processor |
01/30/2013 | CN102903384A Standby charge pump device and method for operating same |
01/30/2013 | CN101981626B 半导体存储装置 The semiconductor memory device |
01/30/2013 | CN101779247B Reducing power consumption during read operations in non-volatile storage |
01/30/2013 | CN101621286B Tuning circuit and method thereof |
01/30/2013 | CN101561887B 射频标识设备 A radio frequency identification device |
01/29/2013 | US8365039 Adjustable read reference for non-volatile memory |
01/29/2013 | US8364434 Calibration circuit |
01/29/2013 | US8363491 Programming a non-volatile memory |
01/29/2013 | US8363482 Flash memory devices with selective bit line discharge paths and methods of operating the same |
01/29/2013 | US8363478 Group based read reference voltage management in flash memory |
01/29/2013 | US8363475 Non-volatile memory unit cell with improved sensing margin and reliability |
01/29/2013 | US8363474 Variable resistance memory device |
01/29/2013 | US8363471 Nonvolatile memory device and method of programming the same |
01/29/2013 | US8363469 All-NMOS 4-transistor non-volatile memory cell |
01/29/2013 | US8363468 Semiconductor memory device |
01/29/2013 | US8363467 Non-volatile semiconductor memory device having non-selected word lines adjacent to selected word lines being charged at different timing for program disturb control |
01/29/2013 | US8363466 Nonvolatile semiconductor memory device and method of reading data from nonvolatile semiconductor memory device |
01/29/2013 | US8363465 High speed low power magnetic devices based on current induced spin-momentum transfer |
01/29/2013 | US8363464 Semiconductor device |
01/29/2013 | US8363463 Phase change memory having one or more non-constant doping profiles |
01/29/2013 | US8363462 Magnetoresistive element |
01/29/2013 | US8363461 Magnetic random access memory, method of initializing magnetic random access memory and method of writing magnetic random access memory |
01/29/2013 | US8363460 Method and apparatus for programming a magnetic tunnel junction (MTJ) |
01/29/2013 | US8363459 Magnetic tunnel junction device and fabrication |
01/29/2013 | US8363458 Memory controller |
01/29/2013 | US8363457 Magnetic memory sensing circuit |
01/29/2013 | US8363456 Semiconductor device |
01/29/2013 | US8363455 Eight transistor soft error robust storage cell |
01/29/2013 | US8363454 SRAM bit cell |
01/29/2013 | US8363453 Static random access memory (SRAM) write assist circuit with leakage suppression and level control |
01/29/2013 | US8363452 Semiconductor device |
01/29/2013 | US8363451 Random access memory with CMOS-compatible nonvolatile storage element and parallel storage capacitor |
01/29/2013 | US8363450 Hierarchical cross-point array of non-volatile memory |
01/29/2013 | US8363449 Floating source line architecture for non-volatile memory |
01/29/2013 | US8363448 Semiconductor memory device |
01/29/2013 | US8363446 Multilevel variable resistance memory cell utilizing crystalline programming states |
01/29/2013 | US8363443 Circuits and techniques to compensate data signals for variations of parameters affecting memory cells in cross-point arrays |
01/29/2013 | US8362581 Magnetic memory element and magnetic memory device |
01/24/2013 | WO2013012800A2 Magneto-electronic devices and methods of production |
01/24/2013 | WO2013012567A1 Program algorithm with staircase waveform decomposed into multiple passes |
01/24/2013 | WO2013011848A1 Semiconductor memory device |
01/24/2013 | WO2013011669A1 Nonvolatile semiconductor storage device and read-out method thereof |
01/24/2013 | WO2013011600A1 Method for driving semiconductor storage device |
01/24/2013 | WO2013011190A1 User selectable balance between density and reliability |
01/24/2013 | WO2012153258A3 An ultra low power memory cell with a supply feedback loop configured for minimal leakage operation |
01/24/2013 | US20130024660 Portable handheld device with multi-core image processor |
01/24/2013 | US20130021845 Programming at least one multi-level phase change memory cell |
01/24/2013 | US20130021844 Phase change memory with double write drivers |
01/24/2013 | US20130021843 Semiconductor device incorporating multi-value magnetic memory cells |
01/24/2013 | US20130021842 Initialization method of a perpendicular magnetic random access memory (mram) device with a stable reference cell |
01/24/2013 | US20130021841 Perpendicular magnetic random access memory (mram) device with a stable reference cell |
01/24/2013 | US20130021840 Semiconductor device and method of manufacturing the same |
01/24/2013 | US20130021839 Semiconductor memory |
01/24/2013 | US20130021838 Method of inspecting variable resistance nonvolatile memory device and variable resistance nonvolatile memory device |
01/24/2013 | US20130021837 Cross point non-volatile memory cell |
01/24/2013 | US20130021836 Memory architecture and cell design employing two access transistors |
01/24/2013 | US20130021835 Resistive ram, method for fabricating the same, and method for driving the same |
01/24/2013 | US20130021834 Memory device and method of manufacturing the same |
01/24/2013 | US20130021833 Differential plate line screen test for ferroelectric latch circuits |
01/24/2013 | US20130021482 Handheld imaging device with system-on-chip microcontroller incorporating on shared wafer image processor and image sensor |
01/24/2013 | US20130021481 Quad-core camera processor |
01/24/2013 | US20130021480 Multiprocessor chip for hand held imaging device |
01/24/2013 | US20130021444 Camera system with color display and processor for reed-solomon decoding |
01/24/2013 | US20130021443 Camera system with color display and processor for reed-solomon decoding |