Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
12/2012
12/25/2012US8339850 Semiconductor device
12/25/2012US8339849 Semiconductor device and layout method for the semiconductor device
12/25/2012US8339843 Generating a temperature-compensated write current for a magnetic memory cell
12/25/2012US8339842 Non-volatile memory
12/25/2012US8339840 Storage element and memory
12/25/2012US8339839 SRAM cell for single sided write
12/25/2012US8339838 In-line register file bitcell
12/25/2012US8339837 Driving method of semiconductor device
12/25/2012US8339836 Semiconductor device
12/25/2012US8339835 Nonvolatile memory element and semiconductor memory device including nonvolatile memory element
12/25/2012US8339834 Non-volatile semiconductor memory device including a variable resistance element
12/25/2012US8339833 Electrically rewritable nonvolatile semiconductor storage device including a variable resistive element
12/25/2012US8339825 Nonvolatile memory device and operation method thereof
12/25/2012US8339156 Method and apparatus for high resolution ZQ calibration
12/25/2012US8338004 Magnetic tunnel junction structure having free layer with oblique magnetization
12/24/2012CA2777436A1 Mobile computing devices
12/20/2012WO2012173750A2 Magnetic memory system and methods in various modes of operation
12/20/2012WO2012171989A2 Non-volatile memory element
12/20/2012WO2012171988A1 Memory cell with volatile and non-volatile storage
12/20/2012US20120320670 Fast verify for phase change memory with switch
12/20/2012US20120320669 Memory device and method of operating the same
12/20/2012US20120320668 Phase qubit cell having enhanced coherence
12/20/2012US20120320667 Magnetic random access memory
12/20/2012US20120320666 Magnetoresistive Element and Magnetic Memory
12/20/2012US20120320665 Semiconductor memory
12/20/2012US20120320664 Semiconductor device
12/20/2012US20120320663 Memory device and semiconductor device
12/20/2012US20120320662 Nonvolatile semiconductor memory device
12/20/2012US20120320661 Method of programming variable resistance element and nonvolatile storage device
12/20/2012US20120320660 Write and erase scheme for resistive memory device
12/20/2012US20120320659 Resistance-change memory device and method of operating the same
12/20/2012US20120320658 Nonvolatile static random access memory cell and memory circuit
12/20/2012US20120320657 Programmable Resistive Memory Unit with Multiple Cells to Improve Yield and Reliability
12/20/2012US20120320656 Programmable Resistive Memory Unit with Data and Reference Cells
12/20/2012DE102012209360A1 Halbleitervorrichtung und Herstellungsverfahren A semiconductor device and manufacturing method
12/20/2012DE102011016339A1 Verfahren zum Versetzen von Selbstauffrischungen Method of Moving boosts self
12/20/2012DE102008011696B4 Halbleiterspeichereinrichtung A semiconductor memory device
12/20/2012DE10129263B4 Nichtflüchtiger ferroelektrischer Speicher und Verfahren zum Erfassen mangelhafter Zellen in diesem Non-volatile ferroelectric memory and method for detecting defective cells in this
12/19/2012EP2535898A1 Multi-bit memory elements, memory devices including the same, and methods of manufacturing the same
12/19/2012EP2534679A1 Semiconductor device and driving method of the same
12/19/2012EP2534583A1 Method and system for a run-time reconfigurable computer architecture
12/19/2012CN202615801U Reading circuit of SRAM (Static Random Access Memory)
12/19/2012CN202615800U Wireless intelligent shared network hard disk drive (HDD)
12/19/2012CN102834869A Semiconductor memory unit
12/19/2012CN102834868A Semiconductor memory device having a three-dimensional structure
12/19/2012CN102832338A Constraint structured phase change memory and manufacturing method thereof
12/19/2012CN102831935A Pulse I-V (intravenous) characteristic testing method and device of phase change memory unit
12/19/2012CN102831929A Reading-writing conversion system and reading-writing conversion method of phase change memory
12/19/2012CN102831928A Resistance-change memory device and method of operating the same
12/19/2012CN102831927A Circuit capable of entering into internal test mode of ASRAM chip
12/19/2012CN102122660B Integrated circuit structure
12/19/2012CN102034534B Sub-threshold storage array circuit
12/19/2012CN101923892B Stable SRAW cell
12/19/2012CN101120415B Synchronization type storage device and its control method
12/18/2012US8335878 Multiport memory architecture, devices and systems including the same, and methods of using the same
12/18/2012US8335114 Semiconductor memory device capable of shortening erase time
12/18/2012US8335112 Nonvolatile semiconductor memory device
12/18/2012US8335110 Semiconductor memory, system, and method of controlling semiconductor memory
12/18/2012US8335108 Bit line gate transistor structure for a multilevel, dual-sided nonvolatile memory cell NAND flash array
12/18/2012US8335106 Superlattice device, manufacturing method thereof, solid-state memory including superlattice device, data processing system, and data processing device
12/18/2012US8335105 Magnetic memory cell
12/18/2012US8335104 Phase change memory
12/18/2012US8335103 Integrated circuit with memory cells comprising a programmable resistor and method for addressing memory cells comprising a programmable resistor
12/18/2012US8335102 Resistance change memory
12/18/2012US8335101 Resistance-based memory with reduced voltage input/output device
12/18/2012US8335100 Circuit, biasing scheme and fabrication method for diode accessed cross-point resistive memory array
12/18/2012US8334551 Non-volatile semiconductor storage device
12/18/2012CA2619190C Information storage device and stored data processing method
12/13/2012WO2012170282A1 Intelligent shifting of read pass voltages for non-volatile storage
12/13/2012WO2012169726A1 Synapse for function cell of spike timing dependent plasticity (stdp), function cell of stdp, and neuromorphic circuit using function cell of stdp
12/13/2012WO2012169142A1 Cache memory and method for driving the same
12/13/2012WO2012168591A1 Logical memory architecture, in particular for mram, pcram, or rram
12/13/2012WO2012167456A1 Data readout circuit of phase change memory
12/13/2012WO2012087455A3 Hierarchical dram sensing
12/13/2012WO2012074776A3 Analog memories utilizing ferroelectric capacitors
12/13/2012US20120314494 Semiconductor storage device
12/13/2012US20120314493 Phase change memory and method for fabricating phase change memory
12/13/2012US20120314492 Non-volatile memory device having phase-change material and method for fabricating the same
12/13/2012US20120314491 Set pulse for phase change memory programming
12/13/2012US20120314490 Magnetic memory system and methods in various modes of operation
12/13/2012US20120314489 Systems and methods for direct communication between magnetic tunnel junctions
12/13/2012US20120314488 Magnetic Random Access Memory Devices Including Multi-Bit Cells
12/13/2012US20120314487 Magnetic Random Access Memory Devices Including Multi-Bit Cells
12/13/2012US20120314486 Semiconductor Memory Device for Reducing Charge/Discharge Power of Write Bitlines
12/13/2012US20120314485 Complementary soi lateral bipolar for sram in a low-voltage cmos platform
12/13/2012US20120314484 Multilevel DRAM
12/13/2012US20120314483 Semiconductor device
12/13/2012US20120314482 Semiconductor memory device
12/13/2012US20120314481 Cell-state measurement in resistive memory
12/13/2012US20120314480 Semiconductor memory device
12/13/2012US20120314479 Memory element and memory device
12/13/2012US20120314478 Resistive memory device and sensing margin trimming method thereof
12/13/2012US20120314477 Array voltage regulating technique to enable data operations on large cross-point memory arrays with resistive memory elements
12/13/2012US20120314476 Organic ferroelectric material based random access memory
12/13/2012US20120314472 Multiple-Bit Programmable Resistive Memory Using Diode as Program Selector
12/13/2012DE102012207562A1 Method for refreshing e.g. dynamic RAM for desktop computer, involves alternatively refreshing memory device without performing data scrubbing in region of device and by performing data scrubbing in region
12/13/2012DE10103526B4 Halbleiterspeicher mit abschaltbaren Wortleitungen Semiconductor memory with disconnectable word lines
12/12/2012EP2533245A1 Magnetic stack and memory point comprising such a stack
12/12/2012EP2533244A1 Magnetic device with exchange coupling
12/12/2012EP2532037A1 Memory cell with parallel electrical paths
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