Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
02/2013
02/13/2013EP2556509A1 Saw-shaped multi-pulse programming for program noise reduction in memory
02/13/2013EP2556508A1 Semiconductor memory device having a three-dimensional structure
02/13/2013EP2556507A1 Asymmetric write scheme for magnetic bit cell elements
02/13/2013EP2556506A1 Programmable tracking circuit for tracking semiconductor memory read current
02/13/2013CN202736496U Word reading line control circuit of clock-controlled asynchronous first in first out (FIFO) memorizer
02/13/2013CN102934170A Semiconductor memory device
02/13/2013CN102934169A Semiconductor memory device
02/13/2013CN102930897A 电压产生器 Voltage generator
02/13/2013CN101595529B Controlled boosting in non-volatile memory soft programming
02/13/2013CN101506897B Dual data-dependent busses for coupling read/write circuits to a memory array
02/13/2013CN101236969B Static RAM component
02/12/2013US8375241 Method and system to improve the operations of a registered memory module
02/12/2013US8375240 Memory system and data transmission method
02/12/2013US8375172 Preventing fast read before write in static random access memory arrays
02/12/2013US8374052 Information storage devices using magnetic domain wall movement and methods of operating the same
02/12/2013US8374048 Method and system for providing magnetic tunneling junction elements having a biaxial anisotropy
02/12/2013US8374038 Erase process for use in semiconductor memory device
02/12/2013US8374030 Semiconductor memory device capable of suppressing peak current
02/12/2013US8374029 Electrically addressed non-volatile memory maintentance
02/12/2013US8374027 Data path for multi-level cell memory, methods for storing and methods for utilizing a memory array
02/12/2013US8374026 System and method of reading data using a reliability measure
02/12/2013US8374025 Spin-transfer torque magnetic random access memory (STTMRAM) with laminated free layer
02/12/2013US8374024 System for handling data in a semiconductor memory apparatus
02/12/2013US8374023 Semiconductor memory apparatus
02/12/2013US8374022 Programming phase change memories using ovonic threshold switches
02/12/2013US8374021 Random number generator
02/12/2013US8374020 Reduced switching-energy magnetic elements
02/12/2013US8374019 Phase change memory with fast write characteristics
02/12/2013US8374018 Resistive memory using SiGe material
02/12/2013US8374017 Ferroelectric memory device and method with reference potential correction capacitor(s)
02/12/2013US8372662 Nonvolatile ferroelectric perpendicular electrode cell, FeRAM having the cell and method for manufacturing the cell
02/07/2013WO2013019758A1 Fast mtj switching write circuit for mram array
02/07/2013WO2013017981A1 Multi-bit magnetic memory cell
02/07/2013US20130033932 Nonvolatile semiconductor memory device and method for driving same
02/07/2013US20130033931 Storage element and storage device
02/07/2013US20130033930 Supply voltage generating circuit and semiconductor device having the same
02/07/2013US20130033929 Write scheme in a phase change memory
02/07/2013US20130033928 Semiconductor storage device and data processing method
02/07/2013US20130033927 Magentic resistance memory apparatus having multi levels and method of driving the same
02/07/2013US20130033926 Semiconductor memory device having balancing capacitors
02/07/2013US20130033925 Semiconductor Device
02/07/2013US20130033924 Code coverage circuitry
02/07/2013US20130033923 Circuit for concurrent read operation and method therefor
02/07/2013US20130033922 Resistive-switching device capable of implementing multiary addition operation and method for multiary addition operation
02/07/2013US20130033921 Semiconductor device
02/07/2013US20130033920 Ionic devices containing a membrane between layers
02/07/2013US20130033919 Nonvolatile memory system and program method thereof
02/07/2013US20130033918 Method and structure for ultra-high density, high data rate ferroelectric storage disk technology using stabilization by a surface conducting layer
02/07/2013DE102004063767B4 Setzprogrammierverfahren und Schreibtreiberschaltung für ein Phasenwechselspeicherfeld Set programming method and write driver circuit for a phase change memory array
02/06/2013EP2553728A1 Damascene -type magnetic tunnel junction structure comprising horizontal and vertical portions and method of forming the same
02/06/2013EP2553722A2 Apparatuses enabling concurrent communication between an interface die and a plurality of dice stacks, interleaved conductive paths in stacked devices, and methods for forming and operating the same
02/06/2013EP2553692A1 Domain-structured ferroic element, method and apparatus for generating and for controlling the electrical conductivity of domain walls at room temperature in the elements and applications of the element
02/06/2013EP2553684A1 Systems and methods of non-volatile memory sensing including selective/differential threshold voltage features
02/06/2013EP2553683A1 Magnetoresistive random access memory (mram) with integrated magnetic film enhanced circuit elements
02/06/2013CN102918649A Magnetic random access memory device and method for producing a magnetic random access memory device
02/06/2013CN102918599A Non-volatile memory and method with atomic program sequence and write abort detection
02/06/2013CN102918596A High-speed sensing for resistive memories
02/06/2013CN102916126A Storage element and storage device
02/06/2013CN102916125A Magnetic memory device and fabrication method thereof
02/06/2013CN102916124A Magnetic memory device and method of manufacturing the same
02/06/2013CN102915761A Delay control circuit applied to memory unit and static random access memory
02/06/2013CN102915760A Hierarchical structure focused on high performance SRAM (Static Random Access Memory)
02/06/2013CN102122527B Memory circuit and method for controlling same
02/06/2013CN101944385B Memorizer
02/06/2013CN101506899B NBTI-resistant memory cells with NAND gates
02/05/2013US8370714 Reference cells for spin torque based memory device
02/05/2013US8370712 Memory management in a non-volatile solid state memory device
02/05/2013US8370557 Pseudo dual-port SRAM and a shared memory switch using multiple memory banks and a sideband memory
02/05/2013US8369158 Erase operations and apparatus for a memory device
02/05/2013US8369154 Channel hot electron injection programming method and related device
02/05/2013US8369153 Semiconductor memory device including stacked gate having charge accumulation layer and control gate and method of writing data to semiconductor memory device
02/05/2013US8369152 Semiconductor memory device including charge accumulation layer
02/05/2013US8369151 Nonvolatile semiconductor memory device
02/05/2013US8369149 Multi-step channel boosting to reduce channel to floating gate coupling in memory
02/05/2013US8369148 Operation methods for memory cell and array thereof immune to punchthrough leakage
02/05/2013US8369147 Non-volatile multilevel memory cell programming
02/05/2013US8369146 Block decoder of semiconductor memory device
02/05/2013US8369145 Apparatus and method for detecting over-programming condition in multistate memory device
02/05/2013US8369144 Semiconductor device and method of manufacturing the same
02/05/2013US8369143 Early detection of degradation in NOR flash memory
02/05/2013US8369141 Adaptive estimation of memory cell read thresholds
02/05/2013US8369140 Systems and methods for programming a memory device
02/05/2013US8369139 Non-volatile memory with resistive access component
02/05/2013US8369138 Semiconductor memory device for reading out data stored in memory
02/05/2013US8369137 Semiconductor memory device including a write driver to output a program signal
02/05/2013US8369136 Resistive memory employing different pulse width signals for reading different memory cells
02/05/2013US8369135 Memory circuit with crossover zones of reduced line width conductors
02/05/2013US8369134 TFET based 6T SRAM cell
02/05/2013US8369132 Methods of programming and erasing programmable metallization cells (PMCs)
02/05/2013US8369131 Bipolar resistive-switching memory with a single diode per memory cell
02/05/2013US8369130 Nonvolatile semiconductor memory device
02/05/2013US8369129 Semiconductor memory device with variable resistance element
02/05/2013US8369128 Storage device and information rerecording method
02/05/2013US8369127 Nonvolatile semiconductor memory device with transistor and variable resistor
01/2013
01/31/2013WO2013016467A1 Non-volatile memory saving cell information in a non-volatile memory array
01/31/2013WO2013016401A1 Simultaneous sensing of multiple wordlines and detection of nand failures
01/31/2013WO2013016397A2 Post-write read in non-volatile memories using comparison of data as written in binary and multi-state formats
01/31/2013WO2013016390A2 Non-volatile memory and method with accelerated post-write read using combined verification of multiple pages
01/31/2013WO2013016291A2 Memory system and method for passing configuration commands
01/31/2013WO2013016078A1 Nvm bitcell with a replacement control gate and additional floating gate
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