Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008) |
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03/07/2013 | US20130058163 Semiconductor memory device |
03/07/2013 | US20130058162 Memory device and method for manufacturing the same |
03/07/2013 | US20130058161 Memory device and method for manufacturing the same |
03/07/2013 | US20130058160 Phase change memory device and computing system having the same |
03/07/2013 | US20130058159 Method of operating phase-change memory |
03/07/2013 | US20130058158 Method, system, and device for l-shaped memory component |
03/07/2013 | US20130058157 Magnetic random access memory device |
03/07/2013 | US20130058156 Magnetic memory cell and magnetic random access memory |
03/07/2013 | US20130058155 Sram dimensioned to provide beta ratio supporting read stability and reduced write time |
03/07/2013 | US20130058154 Semiconductor device and method of manufacturing the same |
03/07/2013 | US20130058153 Semiconductor devices including variable resistance elements and methods of operating semiconductor devices |
03/07/2013 | US20130058152 Method, system, and device for phase change memory switch wall cell with approximately horizontal electrode contact |
03/06/2013 | EP2564390A1 Josephson magnetic random access memory system and method |
03/06/2013 | EP2564389A1 Memory module for simultaneously providing at least one secure and at least one insecure memory area |
03/06/2013 | CN1815623B Magnetoresistance random access memory array |
03/06/2013 | CN102959636A Nonvolatile semiconductor memory device and readout method for same |
03/06/2013 | CN102959634A Saw-shaped multi-pulse programming for program noise reduction in memory |
03/06/2013 | CN102956816A Hole first hardmask definition |
03/06/2013 | CN102956265A Variable-resistance memory device and driving method thereof |
03/06/2013 | CN102956263A Method of operating semiconductor device including variable resistance device |
03/06/2013 | CN102956262A Static ram |
03/06/2013 | CN102956261A Programmable memory cell circuit for FPGA (field programmable gate array) |
03/06/2013 | CN102956260A Dynamic memory refreshing circuit and method thereof |
03/06/2013 | CN102956259A 磁性随机存取存储器 Magnetic Random Access Memory |
03/06/2013 | CN101924118B Controlling the circuitry and memory array relative height in a phase change memory feol process flow |
03/06/2013 | CN101877241B 半导体存储设备 The semiconductor memory device |
03/06/2013 | CN101399073B 半导体存储器装置 The semiconductor memory device |
03/05/2013 | USRE44051 Data bus line control circuit |
03/05/2013 | US8391097 Memory word-line driver having reduced power consumption |
03/05/2013 | US8391079 EEPROM memory architecture optimized for embedded memories |
03/05/2013 | US8391078 Method and apparatus of operating a non-volatile DRAM |
03/05/2013 | US8391077 Nonvolatile semiconductor memory device |
03/05/2013 | US8391075 Nonvolatile semiconductor memory device and method for driving same |
03/05/2013 | US8391073 Adaptive control of programming currents for memory cells |
03/05/2013 | US8391072 Semiconductor memory device and method for controlling the same |
03/05/2013 | US8391070 Moving program verify level for programming of memory |
03/05/2013 | US8391069 Programming method for nonvolatile semiconductor memory device |
03/05/2013 | US8391068 Adaptive programming for flash memories |
03/05/2013 | US8391067 Nonvolatile memory |
03/05/2013 | US8391063 Method of operating memory cell |
03/05/2013 | US8391060 Nonvolatile memory and semiconductor device |
03/05/2013 | US8391059 Methods for operating a semiconductor device |
03/05/2013 | US8391058 Low-cost non-volatile flash-RAM memory |
03/05/2013 | US8391057 Switch and method of forming the same |
03/05/2013 | US8391056 Magnetic vortex storage device |
03/05/2013 | US8391055 Magnetic tunnel junction and memristor apparatus |
03/05/2013 | US8391054 High-capacity low cost multi-state magnetic memory |
03/05/2013 | US8391053 Magnetic memory with a thermally assisted writing procedure and reduced writing field |
03/05/2013 | US8391052 Nonvolatile semiconductor memory device |
03/05/2013 | US8391051 Method of programming nonvolatile memory element |
03/05/2013 | US8391050 Resistance change element, semiconductor memory device, manufacturing method and driving method thereof |
03/05/2013 | US8391049 Resistor structure for a non-volatile memory device and method |
03/05/2013 | US8391048 Non-volatile semiconductor memory device including memory cells with a variable resistor |
03/05/2013 | US8391047 Method of executing a forming operation to variable resistance element |
03/05/2013 | US8391046 Memory cell array |
03/05/2013 | US8391045 Information recording/reproducing device |
03/05/2013 | US8391041 Magnetic memory device |
03/05/2013 | US8390322 Non-volatile logic circuit and a method for operating the same |
03/05/2013 | US8389403 Semiconductor device and method for manufacturing the same |
03/05/2013 | US8389375 Memory cell formed using a recess and methods for forming the same |
02/28/2013 | WO2013028721A1 Read compensation for partially programmed blocks of non-volatile storage |
02/28/2013 | WO2013028434A2 Memory device readout using multiple sense times |
02/28/2013 | WO2013028430A2 Memory device with reduced sense time readout |
02/28/2013 | US20130051171 Memory refresh methods, memory section control circuits, and apparatuses |
02/28/2013 | US20130051140 Clock circuits and methods |
02/28/2013 | US20130051139 Resetting Phase Change Memory Bits |
02/28/2013 | US20130051137 Tile-level snapback detection through coupling capacitor in a cross point array |
02/28/2013 | US20130051136 Methods, apparatuses, and circuits for programming a memory device |
02/28/2013 | US20130051135 Compound cell spin-torque magnetic random access memory |
02/28/2013 | US20130051134 Semiconductor recording device |
02/28/2013 | US20130051133 Anti-fuse circuit using mtj breakdwon and semiconductor device including same |
02/28/2013 | US20130051132 Non-volatile semiconductor memory device |
02/28/2013 | US20130051131 Sram read-write memory cell having ten transistors |
02/28/2013 | US20130051130 Weak bit compensation for static random access memory |
02/28/2013 | US20130051129 Memory device and systems including the same |
02/28/2013 | US20130051128 Fly-over conductor segments in integrated circuits with successive load devices along a signal path |
02/28/2013 | US20130051127 Dram security erase |
02/28/2013 | US20130051126 Capacitors, apparatus including a capacitor and methods for forming a capacitor |
02/28/2013 | US20130051125 Method of operating semiconductor device including variable resistance device |
02/28/2013 | US20130051124 Resistive Memory Device and Test Systems and Methods for Testing the Same |
02/28/2013 | US20130051123 Resistance change memory device and current trimming method thereof |
02/28/2013 | US20130051122 Variable-resistance memory device and driving method thereof |
02/28/2013 | US20130051121 Switchable two-terminal devices with diffusion/drift species |
02/28/2013 | US20130051120 Circuit for generating write signal, variable resistance memory device, and method for programming variable resistance memory |
02/28/2013 | US20130051119 Resistive memory and program verification method thereof |
02/28/2013 | US20130051118 Single layer complementary memory cell |
02/28/2013 | US20130051117 Integrated circuit with vertically integrated passive variable resistance memory and method for making the same |
02/28/2013 | US20130051116 Integrated circuit with face-to-face bonded passive variable resistance memory and method for making the same |
02/28/2013 | US20130051115 Integrated circuit with backside passive variable resistance memory and method for making the same |
02/28/2013 | US20130051114 Data read circuit, a non-volatile memory device having the same, and a method of reading data from the non-volatile memory device |
02/28/2013 | US20130051109 Method of reading a ferroelectric memory cell |
02/28/2013 | DE19929121B4 Integrierte Halbleiterschaltung A semiconductor integrated circuit |
02/28/2013 | DE102012107639A1 Method for reading data from e.g. phase change RAM, involves scanning voltage level difference between data voltage and reference voltages to produce differential output signals, and amplifying output signals to produce read data |
02/28/2013 | DE102004033159B4 Erwärmen von MRAM-Zellen, um ein Umschalten zwischen Zuständen zu erleichtern Heating of MRAM cells in order to facilitate switching between states |
02/27/2013 | EP2562763A2 Method of operating semiconductor device including variable resistance device |
02/27/2013 | EP2562762A2 One-of-N storage cell for N-ary logic circuits |
02/27/2013 | EP2562761A1 Shift register, gate driving device and data line driving device for liquid crystal display |
02/27/2013 | EP2562760A2 Memory device readout using multiple sense times |
02/27/2013 | EP2562759A2 Memory device with reduced sense time readout |
02/27/2013 | EP2561511A1 Programming non-volatile storage includng reducing impact from other memory cells |