Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
03/2013
03/07/2013US20130058163 Semiconductor memory device
03/07/2013US20130058162 Memory device and method for manufacturing the same
03/07/2013US20130058161 Memory device and method for manufacturing the same
03/07/2013US20130058160 Phase change memory device and computing system having the same
03/07/2013US20130058159 Method of operating phase-change memory
03/07/2013US20130058158 Method, system, and device for l-shaped memory component
03/07/2013US20130058157 Magnetic random access memory device
03/07/2013US20130058156 Magnetic memory cell and magnetic random access memory
03/07/2013US20130058155 Sram dimensioned to provide beta ratio supporting read stability and reduced write time
03/07/2013US20130058154 Semiconductor device and method of manufacturing the same
03/07/2013US20130058153 Semiconductor devices including variable resistance elements and methods of operating semiconductor devices
03/07/2013US20130058152 Method, system, and device for phase change memory switch wall cell with approximately horizontal electrode contact
03/06/2013EP2564390A1 Josephson magnetic random access memory system and method
03/06/2013EP2564389A1 Memory module for simultaneously providing at least one secure and at least one insecure memory area
03/06/2013CN1815623B Magnetoresistance random access memory array
03/06/2013CN102959636A Nonvolatile semiconductor memory device and readout method for same
03/06/2013CN102959634A Saw-shaped multi-pulse programming for program noise reduction in memory
03/06/2013CN102956816A Hole first hardmask definition
03/06/2013CN102956265A Variable-resistance memory device and driving method thereof
03/06/2013CN102956263A Method of operating semiconductor device including variable resistance device
03/06/2013CN102956262A Static ram
03/06/2013CN102956261A Programmable memory cell circuit for FPGA (field programmable gate array)
03/06/2013CN102956260A Dynamic memory refreshing circuit and method thereof
03/06/2013CN102956259A 磁性随机存取存储器 Magnetic Random Access Memory
03/06/2013CN101924118B Controlling the circuitry and memory array relative height in a phase change memory feol process flow
03/06/2013CN101877241B 半导体存储设备 The semiconductor memory device
03/06/2013CN101399073B 半导体存储器装置 The semiconductor memory device
03/05/2013USRE44051 Data bus line control circuit
03/05/2013US8391097 Memory word-line driver having reduced power consumption
03/05/2013US8391079 EEPROM memory architecture optimized for embedded memories
03/05/2013US8391078 Method and apparatus of operating a non-volatile DRAM
03/05/2013US8391077 Nonvolatile semiconductor memory device
03/05/2013US8391075 Nonvolatile semiconductor memory device and method for driving same
03/05/2013US8391073 Adaptive control of programming currents for memory cells
03/05/2013US8391072 Semiconductor memory device and method for controlling the same
03/05/2013US8391070 Moving program verify level for programming of memory
03/05/2013US8391069 Programming method for nonvolatile semiconductor memory device
03/05/2013US8391068 Adaptive programming for flash memories
03/05/2013US8391067 Nonvolatile memory
03/05/2013US8391063 Method of operating memory cell
03/05/2013US8391060 Nonvolatile memory and semiconductor device
03/05/2013US8391059 Methods for operating a semiconductor device
03/05/2013US8391058 Low-cost non-volatile flash-RAM memory
03/05/2013US8391057 Switch and method of forming the same
03/05/2013US8391056 Magnetic vortex storage device
03/05/2013US8391055 Magnetic tunnel junction and memristor apparatus
03/05/2013US8391054 High-capacity low cost multi-state magnetic memory
03/05/2013US8391053 Magnetic memory with a thermally assisted writing procedure and reduced writing field
03/05/2013US8391052 Nonvolatile semiconductor memory device
03/05/2013US8391051 Method of programming nonvolatile memory element
03/05/2013US8391050 Resistance change element, semiconductor memory device, manufacturing method and driving method thereof
03/05/2013US8391049 Resistor structure for a non-volatile memory device and method
03/05/2013US8391048 Non-volatile semiconductor memory device including memory cells with a variable resistor
03/05/2013US8391047 Method of executing a forming operation to variable resistance element
03/05/2013US8391046 Memory cell array
03/05/2013US8391045 Information recording/reproducing device
03/05/2013US8391041 Magnetic memory device
03/05/2013US8390322 Non-volatile logic circuit and a method for operating the same
03/05/2013US8389403 Semiconductor device and method for manufacturing the same
03/05/2013US8389375 Memory cell formed using a recess and methods for forming the same
02/2013
02/28/2013WO2013028721A1 Read compensation for partially programmed blocks of non-volatile storage
02/28/2013WO2013028434A2 Memory device readout using multiple sense times
02/28/2013WO2013028430A2 Memory device with reduced sense time readout
02/28/2013US20130051171 Memory refresh methods, memory section control circuits, and apparatuses
02/28/2013US20130051140 Clock circuits and methods
02/28/2013US20130051139 Resetting Phase Change Memory Bits
02/28/2013US20130051137 Tile-level snapback detection through coupling capacitor in a cross point array
02/28/2013US20130051136 Methods, apparatuses, and circuits for programming a memory device
02/28/2013US20130051135 Compound cell spin-torque magnetic random access memory
02/28/2013US20130051134 Semiconductor recording device
02/28/2013US20130051133 Anti-fuse circuit using mtj breakdwon and semiconductor device including same
02/28/2013US20130051132 Non-volatile semiconductor memory device
02/28/2013US20130051131 Sram read-write memory cell having ten transistors
02/28/2013US20130051130 Weak bit compensation for static random access memory
02/28/2013US20130051129 Memory device and systems including the same
02/28/2013US20130051128 Fly-over conductor segments in integrated circuits with successive load devices along a signal path
02/28/2013US20130051127 Dram security erase
02/28/2013US20130051126 Capacitors, apparatus including a capacitor and methods for forming a capacitor
02/28/2013US20130051125 Method of operating semiconductor device including variable resistance device
02/28/2013US20130051124 Resistive Memory Device and Test Systems and Methods for Testing the Same
02/28/2013US20130051123 Resistance change memory device and current trimming method thereof
02/28/2013US20130051122 Variable-resistance memory device and driving method thereof
02/28/2013US20130051121 Switchable two-terminal devices with diffusion/drift species
02/28/2013US20130051120 Circuit for generating write signal, variable resistance memory device, and method for programming variable resistance memory
02/28/2013US20130051119 Resistive memory and program verification method thereof
02/28/2013US20130051118 Single layer complementary memory cell
02/28/2013US20130051117 Integrated circuit with vertically integrated passive variable resistance memory and method for making the same
02/28/2013US20130051116 Integrated circuit with face-to-face bonded passive variable resistance memory and method for making the same
02/28/2013US20130051115 Integrated circuit with backside passive variable resistance memory and method for making the same
02/28/2013US20130051114 Data read circuit, a non-volatile memory device having the same, and a method of reading data from the non-volatile memory device
02/28/2013US20130051109 Method of reading a ferroelectric memory cell
02/28/2013DE19929121B4 Integrierte Halbleiterschaltung A semiconductor integrated circuit
02/28/2013DE102012107639A1 Method for reading data from e.g. phase change RAM, involves scanning voltage level difference between data voltage and reference voltages to produce differential output signals, and amplifying output signals to produce read data
02/28/2013DE102004033159B4 Erwärmen von MRAM-Zellen, um ein Umschalten zwischen Zuständen zu erleichtern Heating of MRAM cells in order to facilitate switching between states
02/27/2013EP2562763A2 Method of operating semiconductor device including variable resistance device
02/27/2013EP2562762A2 One-of-N storage cell for N-ary logic circuits
02/27/2013EP2562761A1 Shift register, gate driving device and data line driving device for liquid crystal display
02/27/2013EP2562760A2 Memory device readout using multiple sense times
02/27/2013EP2562759A2 Memory device with reduced sense time readout
02/27/2013EP2561511A1 Programming non-volatile storage includng reducing impact from other memory cells
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