Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
07/2007
07/17/2007US7245517 Ferroelectric random access memory
07/17/2007US7245464 Magnetic memory having a ferromagnetic tunneling junction
07/17/2007US7245321 Readout circuit with gain and analog-to-digital conversion for image sensor
07/17/2007US7245158 Circuit wiring layout in semiconductor memory device
07/12/2007WO2007078885A2 Multi-level memory cell sensing
07/12/2007WO2007078793A1 Method for programming non-volatile memory with reduced program disturb using modified pass voltages
07/12/2007WO2007077801A1 Memory system for reducing current consumption and method thereof
07/12/2007WO2007077625A1 Amplifier circuit for reading data and semiconductor storage device provided with such amplifier circuit
07/12/2007WO2007076718A1 A close shaped magnetic multi-layer film comprising or not comprising a metal core and the manufacture method and the application of the same
07/12/2007WO2007038558A3 Shape memory device
07/12/2007WO2006081150A8 System and method for performing concatenation of diversely routed channels
07/12/2007WO2006007196A3 Nanotube-based transfer devices and related circuits
07/12/2007US20070162911 Multi-core multi-thread processor
07/12/2007US20070159912 Integrated Circuit Memory Device with Delayed Write Command Processing
07/12/2007US20070159911 Semiconductor memory device and method of operating same
07/12/2007US20070159906 Semiconductor memory device, refresh control method thereof, and test method thereof
07/12/2007US20070159904 Wide dynamic range and high speed voltage mode sensing for a multilevel digital non-volatile memory
07/12/2007US20070159901 Semiconductor Integrated circuit device
07/12/2007US20070159898 Method and apparatus for increasing yield in a memory circuit
07/12/2007US20070159893 Method of programming and erasing multi-level flash memory
07/12/2007US20070159890 Setting fail bit verification circuit with different reference fail numbers and a non-volatile semiconductor memory device including the same
07/12/2007US20070159889 Programming method for flash memory capable of compensating reduction of read margin between states due to hot temperature stress
07/12/2007US20070159887 Method and Apparatus for Programming Nonvolatile Memory
07/12/2007US20070159883 Method and Related Apparatus Capable of Improving Endurance of Memory
07/12/2007US20070159882 Protection of the flow of a program executed by an integrated circuit or of data contained in this circuit
07/12/2007US20070159881 Nonvolatile semiconductor memory device including nand-type flash memory and the like
07/12/2007US20070159880 Secondary injection for NROM
07/12/2007US20070159879 Method and system for probing FCode in problem state memory
07/12/2007US20070159878 Phase change memory device
07/12/2007US20070159877 Magnetic storage device and method of manufacturing the same
07/12/2007US20070159876 Magnetic ramdom access memory and operating method of the same
07/12/2007US20070159875 Magnetoresistive random access memory and its write control method
07/12/2007US20070159874 Semiconductor memory device
07/12/2007US20070159873 Static random access memory cell
07/12/2007US20070159872 SRAM device and method for manufacturing the same
07/12/2007US20070159871 Semiconductor device with a non-erasable memory and/or a nonvolatile memory
07/12/2007US20070159870 Nonvolatile semiconductor memory device
07/12/2007US20070159869 Multi-state resistive memory element, multi-bit resistive memory cell, operating method thereof, and data processing system using the memory element
07/12/2007US20070159867 Memory device, memory circuit and semiconductor integrated circuit having variable resistance
07/12/2007US20070159734 Spin transfer magnetic element having low saturation magnetization free layers
07/12/2007US20070158722 Vertical gain cell
07/12/2007US20070158716 Conductive memory stack with sidewall
07/12/2007DE10260334B4 Fin-Feldeffektransitor-Speicherzelle, Fin-Feldeffekttransistor-Speicherzellen-Anordnung und Verfahren zum Herstellen einer Fin-Feldeffektransistor-Speicherzelle Fin-Feldeffektransitor memory cell, fin field effect transistor memory cell arrangement and method of fabricating a fin field effect transistor memory cell
07/12/2007DE102007001454A1 Halbleiterspeicherbauelement, Speichersystem und Hubweitesteuerverfahren A semiconductor memory device, memory system and Hubweitesteuerverfahren
07/12/2007DE102007001421A1 Speicherdatenbusstruktur und Verfahren zum Übertragen von Informationen mit mehreren Speicherbänken Speicherdatenbusstruktur and method for transmitting information with a plurality of memory banks
07/12/2007DE102006041946A1 Adressenkonverter und Halbleiterspeicherbauelement Address converter and semiconductor memory device
07/12/2007DE102005037635B4 Hardwaresteuerung für den Wechsel des Betriebsmodus eines Speichers Hardware control for changing the operating mode of a memory
07/11/2007EP1805803A2 Scrambling method to reduce wordline coupling noise
07/11/2007EP1805766A2 Spin-transfer based mram using angular-dependent selectivity
07/11/2007EP1685570B1 Refresh for dynamic cells by identifying those with weak retention and refreshing them more often than those with normal retention
07/11/2007EP1671331B1 Low power programming technique for a floating body memory transistor, memory cell, and memory array
07/11/2007EP1661139A4 Method of writing to a multi-state magnetic random access memory cell
07/11/2007EP1500109B1 Redundancy in chained memory architectures
07/11/2007EP1086465B1 Method and apparatus for a serial access memory
07/11/2007CN1998084A Tunnel junction barrier layer comprising a diluted semiconductor with spin sensitivity
07/11/2007CN1998082A Polymer dielectrics for memory element array interconnect
07/11/2007CN1996635A Phase change memory cell and manufacturing method
07/11/2007CN1996609A Multi-bit phase-change random access memory (PRAM) with diameter-controlled contacts and methods of fabricating and programming the same
07/11/2007CN1996572A Method of fabricating phase change ram
07/11/2007CN1996570A Nonvolatile memory device and method of forming the same
07/11/2007CN1996497A Method for improving repeated writing and reading efficient of memory and memory therefor
07/11/2007CN1996493A Phase-change memory device
07/11/2007CN1996492A Phase change memory devices multi-bit operating methods
07/11/2007CN1996491A Nonvolatile carbon nanotube memory device using multiwall carbon nanotubes and methods of operating and fabricating the same
07/11/2007CN1996490A Synchronous type semiconductor device
07/11/2007CN1996489A Memory system with improved additive latency and method of controlling the same
07/11/2007CN1996486A Digital sensing and detection circuit
07/11/2007CN1326242C Semiconductor integrated circuit device
07/11/2007CN1326150C Synchronous random semiconductor memory
07/11/2007CN1326149C Integrated magnetoresistive semiconductor memory system
07/11/2007CN1326110C Base plate for electrooptical device, driving method and use for said base plate
07/11/2007CN1325264C Ink jet printhead chip and method of producing the same, ink jet printhead
07/10/2007US7243277 Method of combining multilevel memory cells for an error correction scheme
07/10/2007US7243275 Smart verify for multi-state memories
07/10/2007US7243252 Synchronization circuit for transferring data using a bus of a different width
07/10/2007US7243180 Semiconductor memory device with bus driver circuit configured to transfer an output on a common bus onto an output bus with inversion or no inversion
07/10/2007US7242661 Dielectric information apparatus, tape-like medium recording/reproducing apparatus and disc-like medium recording/reproducing apparatus
07/10/2007US7242628 Semiconductor device with sense amplifier for memory cells
07/10/2007US7242627 Semiconductor device
07/10/2007US7242625 Memory macro with modular peripheral circuit elements
07/10/2007US7242619 Reading circuit and method for a nonvolatile memory device
07/10/2007US7242615 Non-volatile semiconductor memory device
07/10/2007US7242614 Rewriteable electronic fuses
07/10/2007US7242611 Nonvolatile semiconductor memory device for writing multivalued data
07/10/2007US7242610 Ultraviolet erasable semiconductor memory device
07/10/2007US7242609 Methods and apparatus for low power SRAM
07/10/2007US7242608 Semiconductor memory device having a floating storage bulk region capable of holding/emitting excessive majority carriers
07/10/2007US7242607 Diode-based memory including floating-plate capacitor and its applications
07/10/2007US7242606 Storage apparatus and semiconductor apparatus
07/10/2007US7242605 Phase-change memory device and method that maintains the resistance of a phase-change material in a reset state within a constant resistance range
07/10/2007US7242603 Method of operating a complementary bit resistance memory sensor
07/10/2007US7242602 Semiconductor memory devices having conductive line in twisted areas of twisted bit line pairs
07/10/2007US7242601 Deterministic addressing of nanoscale devices assembled at sublithographic pitches
07/10/2007US7242060 Semiconductor memory device including an SOI substrate
07/10/2007US7242049 Memory device
07/10/2007US7242048 Magnetic elements with ballistic magnetoresistance utilizing spin-transfer and an MRAM device using such magnetic elements
07/10/2007US7242046 Magnetic random access memory designs with controlled magnetic switching mechanism by magnetostatic coupling
07/10/2007US7242045 Spin transfer magnetic element having low saturation magnetization free layers
07/10/2007US7241658 Vertical gain cell
07/10/2007US7240992 Ink jet printhead incorporating a plurality of nozzle arrangement having backflow prevention mechanisms