Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
07/2007
07/24/2007US7248522 Sense amplifier power-gating technique for integrated circuit memory devices and those devices incorporating embedded dynamic random access memory (DRAM)
07/24/2007US7248521 Negative voltage discharge scheme to improve snapback in a non-volatile memory
07/24/2007US7248519 Semiconductor device that initializes memory cells of an activated wordline group
07/24/2007US7248513 Semiconductor memory device having memory block configuration
07/24/2007US7248508 Data retention in a semiconductor memory
07/24/2007US7248507 CMIS semiconductor nonvolatile storage circuit
07/24/2007US7248504 Data processing device
07/24/2007US7248502 Non-volatile semiconductor memory device
07/24/2007US7248499 Layout for NAND flash memory array having reduced word line impedance
07/24/2007US7248498 Serial transistor-cell array architecture
07/24/2007US7248497 Spin-injection FET
07/24/2007US7248495 Semiconductor memory device
07/24/2007US7248494 Semiconductor memory device capable of compensating for leakage current
07/24/2007US7248083 Methods and systems for decreasing transmission timing variations
07/24/2007US7247916 Nonvolatile semiconductor memory and manufacturing method for the same
07/24/2007US7247538 Methods of fabricating floating trap non-volatile semiconductor memory devices including high dielectric constant blocking insulating layers
07/24/2007US7247510 Magnetic recording medium and magnetic memory apparatus
07/24/2007US7247506 Method for producing magnetic memory device
07/24/2007US7247505 Magnetic memory device having magnetic shield layer, and manufacturing method thereof
07/24/2007US7246897 Media cartridge for inkjet printhead
07/24/2007US7246881 Printhead assembly arrangement for a wide format pagewidth inkjet printer
07/19/2007WO2007082227A2 Multiple port memory having a plurality of parallel connected trench capacitors in a cell
07/19/2007WO2007080581A2 Secondary injection for nrom
07/19/2007US20070168829 Methods to make DRAM fully compatible with SRAM
07/19/2007US20070168784 Multilevel semiconductor memory, write/read method thereto/therefrom and storage medium storing write/read program
07/19/2007US20070168769 Multilevel semiconductor memory, write/read method thereto/therefrom and storage medium storing write/read program
07/19/2007US20070168637 Memory array programming circuit and a method for using the circuit
07/19/2007US20070168598 Storage system that is connected to external storage
07/19/2007US20070165463 Self timing write architecture for semiconductor memory and method for providing the same
07/19/2007US20070165461 Disabling faulty flash memory dies
07/19/2007US20070165460 Nonvolatile semiconductor memory device and programming or erasing method therefor
07/19/2007US20070165453 Reconfigurable bit-manipulation node
07/19/2007US20070165452 Phase change memory device and method for manufacturing phase change memory device
07/19/2007US20070165451 Enhanced MRAM reference bit programming structure
07/19/2007US20070165450 Data retention indicator for magnetic memories
07/19/2007US20070165449 Nano-contacted magnetic memory device
07/19/2007US20070165448 Static memory cell having independent data holding voltage
07/19/2007US20070165447 Asymmetrical Random Access Memory Cell, A Memory Comprising Asymmetrical Memory Cells And A Method To Operate Such A Memory
07/19/2007US20070165446 SEU hardened latches and memory cells using progrmmable resistance devices
07/19/2007US20070165445 Eight transistor SRAM cell with improved stability requiring only one word line
07/19/2007US20070165444 Devices and methods of detecting movement between media and probe tip in a probe data storage system
07/19/2007US20070165441 High speed otp sensing scheme
07/19/2007US20070164338 Method of forming nano-sized MTJ cell without contact hole
07/19/2007US20070164264 Storage system using an array of electro-magnetic sensors
07/19/2007DE102006062048A1 Leseschaltung für resistiven Speicher Read circuit for resistive memory
07/19/2007DE102006061166A1 Reduzierung des gateinduzierten Drainleckstroms durch Spannungsregelung der Hauptwortleitung Reduction of the gate induced drain leakage current through voltage control of the main word line
07/19/2007DE102006058865A1 Semiconductor memory device e.g. dynamic RAM, has each unit memory cell comprising complementary floating body transistor capacitor-less memory cells
07/19/2007DE102006019749A1 Memory e.g. dynamic RAM, cell cyclic refreshing adjusting method, involves changing temporal distance of refresh command, and transmission of command is stopped during determined temperature level
07/19/2007DE102004047663B4 Speicherschaltung mit einer Initialisierungseinheit, sowie Verfahren zum Optimieren von Datenempfangsparametern in einem Speichercontroller Memory circuit having a initialization unit, and to methods for optimizing data reception parameters in a memory controller
07/18/2007EP1808862A1 Magnetic device with magnetic tunnel junction, memory and read and write methods using this device
07/18/2007EP1808861A1 Multi-port memory based on a plurality of memory cores
07/18/2007EP1702334A4 Radiation tolerant sram bit
07/18/2007EP1595261B1 Dram output circuitry supporting sequential data capture to reduce core access times
07/18/2007EP1517794A4 Ink jet printhead chip with predetermined micro-electromechanical systems height
07/18/2007CN1327613C Hyper-ring oscillator
07/18/2007CN1327451C Programmable address logic for diode-based solid memory
07/18/2007CN1327448C High stability semiconductor storage device containing non-volatile storage unit
07/18/2007CN1327447C Semiconductor storage equipment and electronic information equipment using said device
07/18/2007CN1327446C Magnetic random access storage device and the reading method thereof
07/18/2007CN1327357C System and method for verification
07/18/2007CN1327311C Self-refreshing electricity consumption method of saving SDRAM through spare data
07/18/2007CN101002331A Self-biasing transistor structure and an SRAM cell
07/18/2007CN101002280A 半导体器件及写入方法 Semiconductor device and method of writing
07/18/2007CN101002279A Semiconductor device and method for writing data in semiconductor device
07/18/2007CN101002275A Nonvolatile semiconductor memory, semiconductor device and charge pump circuit
07/18/2007CN101002272A Addressing data within dynamic random access memory
07/18/2007CN101002271A Semiconductor storage device and semiconductor storage device control method
07/18/2007CN101000930A Semiconductor element, semiconductor memory device, its manufacture and data reading/writing method
07/18/2007CN101000920A Self-align planerized bottom electrode phase change memory and manufacturing method
07/18/2007CN101000918A Structure and method for a magnetic memory device with proximity writing
07/18/2007CN101000892A Programmable resistive ram and manufacturing method
07/18/2007CN101000891A Programmable resistive ram and manufacturing method
07/18/2007CN101000822A Close-shaped magnetic multi-layer film with metal core and manufacturing method and use thereof
07/18/2007CN101000821A Close-shaped magnetic multi-layer film and preparation method and use thereof
07/18/2007CN101000801A Programming and erasing method for non-volatile memory
07/18/2007CN101000799A Apparatus and method for supplying voltage in semiconductor device
07/18/2007CN101000798A Memory updating method
07/18/2007CN101000797A Nonvolatile semiconductor memory device
07/18/2007CN101000590A Method and system for reading data in memory
07/17/2007US7245549 Semiconductor memory device and method of controlling the semiconductor memory device
07/17/2007US7245547 Power detector for use in a nonvolatile memory device and method thereof
07/17/2007US7245539 Memory card, semiconductor device, and method of controlling semiconductor memory
07/17/2007US7245538 High voltage generation and regulation circuit in a memory device
07/17/2007US7245537 Nonvolatile memory device and method of programming same
07/17/2007US7245534 Nonvolatile semiconductor memory
07/17/2007US7245532 Nonvolatile semiconductor memory device which stores multi-value information
07/17/2007US7245531 Semiconductor device
07/17/2007US7245530 Semiconductor memory device with MOS transistors, each including floating gate and control gate, and memory card including the same
07/17/2007US7245529 Dynamically tunable resistor or capacitor using a non-volatile floating gate memory cell
07/17/2007US7245528 Semiconductor memory device which stores plural data in a cell
07/17/2007US7245527 Nonvolatile memory system using magneto-resistive random access memory (MRAM)
07/17/2007US7245526 Phase change memory device providing compensation for leakage current
07/17/2007US7245525 Data restore in thryistor based memory devices
07/17/2007US7245524 Magnetic memory device and write method of magnetic memory device
07/17/2007US7245523 Bistable magnetic device using soft magnetic intermediary material
07/17/2007US7245522 Magnetic memory device, method for writing magnetic memory device and method for reading magnetic memory device
07/17/2007US7245521 Semiconductor integrated circuit device
07/17/2007US7245520 Random access memory including nanotube switching elements
07/17/2007US7245519 Digitally programmable capacitor array
07/17/2007US7245518 Ferroelectric memory