Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
03/2009
03/18/2009CN100470664C Magnetic storage device
03/18/2009CN100470656C Method and apparatus for generating oscillating clock signal
03/17/2009US7506236 Techniques for operating semiconductor devices
03/17/2009US7506126 Detection circuit for mixed asynchronous and synchronous memory operation
03/17/2009US7506113 Method for configuring compensation
03/17/2009US7506081 System and method of maintaining high bandwidth requirement of a data pipe from low bandwidth memories
03/17/2009US7505532 Signal transmission system using PRD method, receiver circuit for use in the signal transmission system, and semiconductor memory device to which the signal transmission system is applied
03/17/2009US7505336 Method and apparatus for synchronization of row and column access operations
03/17/2009US7505335 Nonvolatile semiconductor memory device
03/17/2009US7505334 Measurement method for reading multi-level memory cell utilizing measurement time delay as the characteristic parameter for level definition
03/17/2009US7505327 Method of controlling a semiconductor device by a comparison of times for discharge of bit lines connected to different memory cell arrays
03/17/2009US7505326 Programming pulse generator
03/17/2009US7505325 Low voltage low capacitance flash memory array
03/17/2009US7505324 Semiconductor memory device with a stacked gate including a floating gate and a control gate
03/17/2009US7505323 Programming memory devices
03/17/2009US7505322 Method for reading NAND flash memory device using self-boosting
03/17/2009US7505321 Programmable memory array structure incorporating series-connected transistor strings and methods for fabrication and operation of same
03/17/2009US7505320 Non-volatile memory with background data latch caching during program operations
03/17/2009US7505319 Method and apparatus for high efficiency redundancy scheme for multi-segment SRAM
03/17/2009US7505318 Nonvolatile semiconductor memory device
03/17/2009US7505317 Method, apparatus, and system for providing initial state random access memory
03/17/2009US7505314 Semiconductor storage device provided with memory cell having charge accumulation layer and control gate
03/17/2009US7505313 Program method of flash memory capable of compensating reduction of read margin between states due to hot temperature stress
03/17/2009US7505311 Semiconductor memory device
03/17/2009US7505310 Method of configuring superconducting random access memory, device structure of the same, and superconducting drive circuit
03/17/2009US7505308 Systems involving spin-transfer magnetic random access memory
03/17/2009US7505307 Semiconductor memory having resistance change element
03/17/2009US7505306 Magnetic memory device
03/17/2009US7505305 Thin film magnetic memory device having a highly integrated memory array
03/17/2009US7505304 Fault tolerant asynchronous circuits
03/17/2009US7505303 Method and apparatus to create an erase disturb on a non-volatile static random access memory cell
03/17/2009US7505302 Multi-level dynamic memory device
03/17/2009US7505301 Apparatus and method of driving memory for display device
03/17/2009US7505299 Semiconductor memory device
03/17/2009US7505296 Ternary content addressable memory with block encoding
03/17/2009US7505068 Image processing apparatus for applying effects to a stored image
03/17/2009US7504695 SRAM memory cell and method for compensating a leakage current flowing into the SRAM memory cell
03/17/2009US7504295 Methods for fabricating dynamic random access memory cells having laterally offset storage nodes
03/17/2009US7504266 Magnetic tunnel junction structures and methods of fabrication
03/12/2009WO2009032606A2 Thin gate structure for memory cells and methods for forming the same
03/12/2009WO2009032594A1 Sram bias for read and write
03/12/2009WO2009032531A2 Power saving sensing scheme for solid state memory
03/12/2009WO2009031677A1 Semiconductor device
03/12/2009WO2009031231A1 Semiconductor device
03/12/2009WO2009030631A1 Sense amplifier circuitry for integrated circuit having memory cell array, and method of operating same
03/12/2009WO2009030169A1 Method for controlling sram data read-write, integrated circuit and liquid crystal display device with the integrated circuit
03/12/2009WO2009002940A3 Systems and methods of reading nonvolatile memory
03/12/2009WO2008088696A8 Cmos sram/rom unified bit cell
03/12/2009US20090067256 Thin gate stack structure for non-volatile memory cells and methods for forming the same
03/12/2009US20090067250 Memory devices with page buffer having dual registers and method of using the same
03/12/2009US20090067243 Nonvolatile semiconductor memory device and method of driving the same
03/12/2009US20090067242 Programming method of flash memory device
03/12/2009US20090067233 Magnetic random access memory and method of reading data from the same
03/12/2009US20090067232 Multiple Magneto-Resistance Devices Based on Doped Magnesium Oxide
03/12/2009US20090067231 Magnetic memory cell based on a magnetic tunnel junction(mtj) with independent storage and read layers
03/12/2009US20090067230 Multi-level memory devices and methods of operating the same
03/12/2009US20090067229 Semiconductor memory device for writing data to multiple cells simultaneously and refresh method thereof
03/12/2009US20090067228 Phase change memory device, manufacturing method thereof and operating method thereof
03/12/2009US20090067227 Phase change memory device having a plurality of reference currents and operating method thereof
03/12/2009US20090067226 Integrated circuit with phase-change memory cells and method for addressing phase-change memory cells
03/12/2009US20090067225 Modular magnetoresistive memory
03/12/2009US20090067224 Magnetoresistive element, particularly memory element or logic element, and method for writing information to such an element
03/12/2009US20090067223 Computer-readable medium encoding a back-gate controlled asymmetrical memory cell and memory using the cell
03/12/2009US20090067222 Semiconductor memory device
03/12/2009US20090067221 High density 45nm sram using small-signal non-strobed regenerative sensing
03/12/2009US20090067220 Semiconductor device including memory having nodes connected with continuous diffusion layer but isolated from each other by transistor
03/12/2009US20090067219 Semiconductor memory device including SRAM cell having well power potential supply region provided therein
03/12/2009US20090067218 Sense amplifier circuitry for integrated circuit having memory cell array, and method of operating same
03/12/2009US20090067217 Methods for supplying power supply voltages in semiconductor memory devices and semiconductor memory devices using the same
03/12/2009US20090067216 Resistive memory devices including selected reference memory cells
03/12/2009US20090067215 Electric element, memory device, and semiconductor integrated circuit
03/12/2009US20090067214 Electric element, memory device, and semiconductor integrated circuit
03/12/2009US20090067213 Method of forming controllably conductive oxide
03/12/2009US20090067212 Magnetic random access memory and data read method of the same
03/12/2009US20090067210 Three dimensional structure memory
03/12/2009US20090066761 Inkjet heater with heater element supported by sloped sides with less resistance
03/12/2009US20090066757 Nozzle arrangement with an actuator having iris vanes
03/12/2009US20090066756 Printhead Having Nozzle Arrangements With Magnetic Paddle Actuators
03/12/2009US20090066364 Nonvolatile programmable logic circuit
03/12/2009US20090065909 Segmented magnetic shielding elements
03/12/2009DE102008025196A1 Systeme, Verfahren und Vorrichtungen zum Senden von Datenmaskenbits an eine Speichervorrichtung Systems, methods and apparatus for transmitting to a storage device Datenmaskenbits
03/12/2009DE102007043790A1 Storage stick for use in markings in computer, comprises magnetic materials for storing data, where magnetic materials are made of aluminum-nickel-cobalt or cobalt-selenium
03/12/2009DE102007042880A1 Binary data handling device e.g. integrated dynamic RAM, has two preloading circuits connecting with average potential and preset logic potential for continuance of activation of primary and secondary sensing bit line wires, respectively
03/11/2009EP1473733B1 Composite storage circuit and semiconductor device having the same
03/11/2009EP1447811B1 Ferroelectric storage device, drive method and drive circuit thereof
03/11/2009EP1417685A4 Proportional to temperature voltage generator
03/11/2009CN101385088A Single latch data circuit in a multiple level cell non-volatile memory device
03/11/2009CN101384984A Portable data storage device incorporating multiple flash memory units
03/11/2009CN101383398A Application of stibium containing material as resistor converting storage medium
03/11/2009CN101383397A Phase change memory device and fabrication method thereof
03/11/2009CN101383396A Magnetic storage unit construction and magnetic storage device
03/11/2009CN101383337A Programmable fuse/non-volatile memory structures in beol regions using externally heated phase change material
03/11/2009CN101383185A Magnetic random access memory
03/11/2009CN101383182A Semiconductor storage device
03/11/2009CN101383181A Semiconductor memory device
03/11/2009CN100468574C Non-volatile semiconductor storage device
03/11/2009CN100468573C Semiconductor storage apparatus
03/11/2009CN100468572C Memory device
03/11/2009CN100468571C Memory device
03/11/2009CN100468570C Semiconductor memory device
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