Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
04/2009
04/01/2009CN100474436C Methods and apparatus for delay circuit
04/01/2009CN100474435C Read amplifier and electronic apparatus using the same
04/01/2009CN100474434C Integrated circuit memory devices and operating methods configured to output data bits at a lower rate
04/01/2009CN100474433C Stacked memory, memory module and memory system
04/01/2009CN100474421C Memory medium based on current distribution
04/01/2009CN100474405C Method and apparatus for determining a recording location on a high-density recording medium
03/2009
03/31/2009US7512763 Transparent SDRAM in an embedded environment
03/31/2009US7512032 Electronic device comprising non volatile memory cells with optimized programming and corresponding programming method
03/31/2009US7512022 Non-volatile memory structure
03/31/2009US7512017 Integration of planar and tri-gate devices on the same substrate
03/31/2009US7512015 Negative voltage blocking for embedded memories
03/31/2009US7512014 Comprehensive erase verification for non-volatile memory
03/31/2009US7512013 Memory structures for expanding a second bit operation window
03/31/2009US7512011 Method of reading data in a non-volatile memory device
03/31/2009US7512009 Method for programming a reference cell
03/31/2009US7512008 Circuit to control voltage ramp rate
03/31/2009US7512007 Data processing device
03/31/2009US7512006 Non-volatile memory and semiconductor device
03/31/2009US7512004 Semiconductor memory device having stacked gate including charge accumulation layer and control gate and test method thereof
03/31/2009US7512003 Non-volatile memory device
03/31/2009US7511997 Semiconductor memory device
03/31/2009US7511995 Self-boosting system with suppression of high lateral electric fields
03/31/2009US7511994 MEM suspended gate non-volatile memory
03/31/2009US7511993 Phase change memory device and related programming method
03/31/2009US7511992 Magnetic memory device
03/31/2009US7511991 Spin-injection magnetic random access memory
03/31/2009US7511990 Magnetic tunnel junction temperature sensors
03/31/2009US7511989 Memory cells in double-gate CMOS technology provided with transistors with two independent gates
03/31/2009US7511988 Static noise-immune SRAM cells
03/31/2009US7511987 Memory device with hierarchy bit line
03/31/2009US7511986 Semiconductor memory device
03/31/2009US7511985 Semiconductor memory device
03/31/2009US7511984 Phase change memory
03/31/2009US7511983 Memory device with hierarchy bit line
03/31/2009US7511982 High speed OTP sensing scheme
03/31/2009US7511981 Non-volatile memory device
03/31/2009US7511744 Portable camera with inbuilt printer device
03/31/2009US7511562 High voltage generating circuit preserving charge pumping efficiency
03/31/2009US7511532 Reconfigurable logic structures
03/31/2009US7511377 Semiconductor integrated circuit device and process for manufacturing the same
03/26/2009WO2009039141A1 Erase method in thin film nonvolatile memory
03/26/2009WO2009039011A1 Non-volatile memory and method for biasing adjacent word line for verify during programming
03/26/2009WO2009038942A1 Method and apparatus for printed resistive read-only memory
03/26/2009WO2009038604A1 Programmable csonos logic element
03/26/2009WO2009038004A1 Magnetic random access memory
03/26/2009WO2009037910A1 Magnetic random access memory, its writing method, and magnetoresistive effect element
03/26/2009WO2009037909A1 Magnetic random access memory
03/26/2009WO2007080581A3 Secondary injection for nrom
03/26/2009US20090081824 Stacked organic memory devices and methods of operating and fabricating
03/26/2009US20090080278 Circuit and method for reducing power in a memory device during standby modes
03/26/2009US20090080269 Semiconductor memory device
03/26/2009US20090080257 Semiconductor device
03/26/2009US20090080254 Gated Diode Nonvolatile Memory Cell Array
03/26/2009US20090080252 Semiconductor memory device
03/26/2009US20090080247 Using mlc flash as slc by writing dummy data
03/26/2009US20090080244 Refreshing Data of Memory Cells with Electrically Floating Body Transistors
03/26/2009US20090080243 Device controlling phase change storage element and method thereof
03/26/2009US20090080242 Programming a multilevel phase change memory cell
03/26/2009US20090080241 Programming a phase change memory
03/26/2009US20090080240 Method for production of mram elements
03/26/2009US20090080239 Magnetoresistive element and magnetic memory
03/26/2009US20090080238 Magnetoresistive element and magnetoresistive random access memory including the same
03/26/2009US20090080237 Sram memory with reference bias cell
03/26/2009US20090080236 Semiconductor memory device and method for manufacturing same
03/26/2009US20090080235 Compact and highly efficient dram cell
03/26/2009US20090080234 Semiconductor device and dram controller
03/26/2009US20090080230 eDRAM Hierarchical Differential Sense AMP
03/26/2009US20090079009 Memory device, memory circuit and semiconductor integrated circuit having variable resistance
03/26/2009DE102006029169B4 Speicherbaustein mit veränderbarer Spaltenselektionsdauer Memory module with variable length column selection
03/25/2009EP1913596A4 Voltage down converter for high speed memory
03/25/2009EP1894202A4 Word line driver for dram embedded in a logic process
03/25/2009EP1593126B1 Mram architecture for low power consumption and high selectivity
03/25/2009EP1421589B1 Multiple word-line accessing and accessor
03/25/2009CN101393965A Phase change memory device and methods of fabricating the same
03/25/2009CN101393964A Phase change memory with various grain sizes and forming method thereof
03/25/2009CN101393963A Single crystalline NaCl barrier magnetic tunnel junction and use therefor
03/25/2009CN101393962A Magnetoresistive sensor memory with multiferroic material
03/25/2009CN101393888A Stacked 1T-n memory cell structure
03/25/2009CN101393772A Multi-level memory devices and methods of operating the same
03/25/2009CN101393771A Semiconductor device and DRAM controller
03/25/2009CN101393770A Memory cell structures, devices, controllers, , and method for manufacturing and operating the same
03/25/2009CN101393769A Activated operation method for resistor memory
03/25/2009CN101393768A Activated operation method for resistor memory
03/25/2009CN100472661C Method of dual cell memory device operation for improved end-of-life read margin
03/25/2009CN100472660C Block word line precharge circuit of flash memory device
03/25/2009CN100472658C Method of dynamically controlling program verify levels in multilevel memory cells
03/25/2009CN100472654C Semiconductor memory device and operating method of the same
03/25/2009CN100472653C Internal voltage generation circuit of semiconductor memory device
03/25/2009CN100472652C Dual equalization devices for long data line pairs, equalization method and integrated circuit storage memorizer
03/25/2009CN100472651C Semiconductor storage device
03/25/2009CN100472650C 半导体存储器件和半导体集成电路 The semiconductor memory device and a semiconductor integrated circuit
03/25/2009CN100472649C Memory
03/25/2009CN100472648C Tamper-resistant packaging and approach
03/25/2009CN100472647C Non-volatile semiconductor memory
03/25/2009CN100472646C Method and apparatus for standby power reduction in semiconductor devices
03/25/2009CN100472643C Memory circuit and method of generating the same
03/25/2009CN100472498C Systems and methods for automatically eliminating imbalance between signals
03/25/2009CN100472492C Memory buffer device integrating refresh
03/24/2009US7509566 Flash memory
03/24/2009US7509469 Semiconductor memory asynchronous pipeline
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