Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
07/2009
07/16/2009US20090180313 Chalcogenide anti-fuse
07/16/2009US20090180312 Unidirectional-Current Magnetization-Reversal Magnetoresistance Element and Magnetic Recording Apparatus
07/16/2009US20090180311 Core-Rotating Element of Ferromagnetic Dot and Information Memory Element Using the Core of Ferromagnetic Dot
07/16/2009US20090180310 Resistance change type memory
07/16/2009US20090180309 Memory Cells, Memory Cell Programming Methods, Memory Cell Reading Methods, Memory Cell Operating Methods, and Memory Devices
07/16/2009US20090180308 Method of using spin injection device
07/16/2009US20090179693 Semiconductor device
07/16/2009US20090179692 Semiconductor integrated circuit device operating with low power consumption
07/16/2009CA2711671A1 System and method of selectively applying negative voltage to wordlines during memory device read operation
07/15/2009EP2078303A1 Reading of a nonvolatile memory cell by taking account of the stored state of a neighboring memory cell
07/15/2009CN101484947A Maintenance operations for multi-level data storage cells
07/15/2009CN101483064A Method for adaptive detecting configuration by SDRAM
07/15/2009CN101483063A Semiconductor memory device and method for fabricating the same
07/15/2009CN101483062A Resistance change type memory
07/15/2009CN100514695C Programmable structure of micro-electronics
07/15/2009CN100514492C Device and method for pulse width control in a phase change memory device
07/15/2009CN100514491C Dual port sram cell
07/15/2009CN100514490C Storage device and method for amplifying voltage level of bit line and complementary bit line
07/15/2009CN100514489C Memory devices having bit line precharge circuits and associated bit line precharge methods
07/15/2009CN100514488C Off chip DRAM data sampling method with configurable sample-taking point
07/15/2009CN100514487C Magnetoelectronics information device having a compound magnetic free layer
07/15/2009CN100514400C Flip-flops, shift registers, and active-matrix display devices
07/15/2009CN100514317C Signal transmitting device suitable for fast signal transmission
07/15/2009CN100513182C Replaceable memory device for a consumable substance container
07/14/2009US7562269 Semiconductor storage device
07/14/2009US7562256 Semiconductor memory device for build-in fault diagnosis
07/14/2009US7561480 Ground biased bitline register file
07/14/2009US7561477 Data strobe synchronization circuit and method for double data rate, multi-bit writes
07/14/2009US7561474 Program verifying method and programming method of flash memory device
07/14/2009US7561473 System for performing data pattern sensitivity compensation using different voltage
07/14/2009US7561468 Non-volatile semiconductor memory device and method of writing data in non-volatile semiconductor memory devices
07/14/2009US7561467 Flash memory device using program data cache and programming method thereof
07/14/2009US7561463 Thin film phase-change memory
07/14/2009US7561462 Circuit and method for a high speed dynamic RAM
07/14/2009US7561461 Non-volatile semiconductor memory device
07/14/2009US7561460 Resistive memory arrangement
07/14/2009US7561459 Semiconductor memory device
07/14/2009US7561458 Ferroelectric memory array for implementing a zero cancellation scheme to reduce plateline voltage in ferroelectric memory
07/14/2009US7561385 Magneto-resistive element in which a free layer includes ferromagnetic layers and a non-magnetic layer interposed therebetween
07/14/2009US7560975 Semiconductor device
07/14/2009US7560760 Ferroelectric memory devices having expanded plate lines
07/14/2009US7560724 Storage device with reversible resistance change elements
07/14/2009US7560339 Nonvolatile memory cell comprising a reduced height vertical diode
07/14/2009US7560269 analysis apparatus comprising electrode layouts on nonconducting substrates, impedance analyzers and software programs, used for analyzing cells; screening compounds that effect immunoglobulin mediated responses of cells to antigens
07/14/2009US7559472 User interface for an image transformation device
07/09/2009WO2009085079A1 Method of programming cross-point diode memory array
07/09/2009WO2009085075A1 Two terminal nonvolatile memory using gate controlled diode elements
07/09/2009US20090175103 Semiconductor memory asynchronous pipeline
07/09/2009US20090175085 Non-volatile semiconductor memory device and method of writing and reading the same
07/09/2009US20090175082 Flash EEprom System With Simultaneous Multiple Data Sector Programming and Storage of Physical Block Characteristics in Other Designated Blocks
07/09/2009US20090175080 Flash EEprom System With Simultaneous Multiple Data Sector Programming and Storage of Physical Block Characteristics in Other Designated Blocks
07/09/2009US20090175073 Nanostructure-Based Memory
07/09/2009US20090175072 Phase-change random access memory devices and related methods of operation
07/09/2009US20090175071 Phase change memory dynamic resistance test and manufacturing methods
07/09/2009US20090175070 Dual node access storage cell having buffer circuits
07/09/2009US20090175069 Storage cell having buffer circuit for driving the bitline
07/09/2009US20090175068 Sram device, and sram device design structure, with adaptable access transistors
07/09/2009US20090175067 Sram employing a read-enabling capacitance
07/09/2009US20090175066 High-speed DRAM including hierarchical read circuits
07/09/2009US20090175065 Semiconductor memory device and method for fabricating the same
07/09/2009US20090175064 Semiconductor memory device with reduced coupling noise
07/09/2009DE10354535B4 Chipintegrierte Abschlussschaltung, zugehörige Speicheranordnung und zugehöriges Abschlussverfahren Integrated chip termination circuit associated memory device and associated method statements
07/09/2009DE10334531B4 Speichermodul und Speichersystem, geeignet für einen Hochgeschwindigkeitsbetrieb Memory module and storage system suitable for a high speed operation
07/09/2009DE102008003385A1 Flip-flop circuit i.e. latch, for e.g. electronic component, has transmission circuit designed to couple signal and control signal strongly at node and to couple signal weakly at node without control signal or to decouple signal from node
07/09/2009DE102004030591B4 Magnetischer Speicher, der Veränderungen zwischen einem ersten und einem zweiten Widerstandszustand einer Speicherzelle erfasst Detected magnetic memory that changes between a first and a second resistance state of a memory cell
07/08/2009EP2077558A1 Predictive timing calibration for memory devices
07/08/2009EP2076905A2 Concurrent reading of status registers
07/08/2009EP2076904A2 Dynamic word line drivers and decoders for memory arrays
07/08/2009EP1955333A4 Semiconductor integrated circuit having low power consumption with self-refresh
07/08/2009CN101477833A Clock controlled asynchronous FIFO memory
07/08/2009CN101477832A Solid hard disc, recognition method thereof, monitoring method and system therefor
07/08/2009CN101477830A Multiport memory based on dynamic random access memory core
07/08/2009CN101477829A Multiport memory based on dynamic random access memory core
07/08/2009CN100511696C Stacked 1T-nmemory cell structure
07/08/2009CN100511643C Method for making self-alignment crossover point storage array
07/08/2009CN100511477C Static random access memory device
07/08/2009CN100511476C Static random access memory and operation method
07/08/2009CN100511475C Semiconductor memory module
07/08/2009CN100511474C Noise suppression for open bit line DRAM architectures
07/08/2009CN100511473C Storage devices and semiconductor devices
07/08/2009CN100511472C 半导体存储器件 The semiconductor memory device
07/08/2009CN100511471C Ferroelectric random access memory device, display drive integrated circuit and electronic apparatus
07/08/2009CN100511085C Computer arrangement using non-refreshed dynamic random access memory
07/07/2009US7558145 Word line control for improving read and write margins
07/07/2009US7558132 Implementing calibration of DQS sampling during synchronous DRAM reads
07/07/2009US7558127 Data output circuit and method in DDR synchronous semiconductor device
07/07/2009US7558126 Nonvolatile semiconductor memory device
07/07/2009US7558122 Flash memory device and method of erasing flash memory device
07/07/2009US7558121 Flash memory device and smart card including the same
07/07/2009US7558115 Program method of flash memory device
07/07/2009US7558108 3-bit NROM flash and method of operating same
07/07/2009US7558107 Non volatile memory
07/07/2009US7558106 Thin film magnetic memory device writing data with bidirectional current
07/07/2009US7558105 Phase change memory devices and multi-bit operating methods for the same
07/07/2009US7558104 Power saving in memory arrays
07/07/2009US7558103 Magnetic switching element and signal processing device using the same
07/07/2009US7558102 Device and method having a memory array storing each bit in multiple memory cells
07/07/2009US7558101 Scan sensing method that improves sensing margins
07/07/2009US7558100 Phase change memory devices including memory cells having different phase change materials and related methods and systems
07/07/2009US7558099 Method of controlling the resistance in a variable resistive element and non-volatile semiconductor memory device