Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
08/2009
08/06/2009US20090196090 Nanoscale Shift Register And Signal Demultiplexing Using Microscale/Nanoscale Shift Registers
08/06/2009US20090196089 Phase change material, phase change memory device including the same, and methods of manufacturing and operating the phase change memory device
08/06/2009US20090196088 Resistance control in conductive bridging memories
08/06/2009US20090196087 Non-volatile register
08/06/2009US20090196085 Sram memory cell protected against current or voltage spikes
08/06/2009US20090195607 Inkjet printhead nozzle arrangement with movement transfer mechanism.
08/06/2009US20090195594 Printer With Movable Capping Member And Fixed Printhead And Platen
08/06/2009US20090195281 Timing Signal Generating Circuit, Semiconductor Integrated Circuit Device and Semiconductor Integrated Circuit System to which the Timing Signal Generating Circuit is Applied, and Signal Transmission System
08/06/2009US20090194756 Self-aligned eletrode phase change memory
08/06/2009DE102005014460B4 Hochzuverlässiges Speicherelement mit verbesserter Verzögerungszeit Highly reliable memory element with improved delay time
08/06/2009DE102005011859B4 Ein Entwurf eines dreifach redundanten Latches mit niedriger Verzögerungszeit A design of a triple redundant latches with low delay time
08/06/2009DE10113853B4 Magnetspeicherelement und Magnetspeicher The magnetic memory element and the magnetic memory
08/05/2009EP2084709A2 Nonvolatile memory with variable read threshold
08/05/2009EP2016588A4 Dynamic random access memory with fully independent partial array refresh function
08/05/2009EP2013881A4 Dynamic random access memory device and method for self- refreshing memory cells with temperature compensated self- refresh
08/05/2009EP1934982A4 Dram density enhancements
08/05/2009EP1743380A4 Split-channel antifuse array architecture
08/05/2009EP1719134A4 Perpendicular magnetization magnetic element utilizing spin transfer
08/05/2009EP1292952B8 Semiconductor memory having segmented row repair
08/05/2009EP0870241B2 Protocol for communication with dynamic memory
08/05/2009CN201285770Y Phase transition storage unit structure
08/05/2009CN101501782A Non-volatile memory with controlled program/erase
08/05/2009CN101501779A Memory device with adaptive capacity
08/05/2009CN101499513A Thermally assisted magnetic memory cell structure and magnetic random access memory
08/05/2009CN101499498A Optical sensor element, image forming apparatus, electronic apparatus and storage element
08/05/2009CN101499483A Polymer brush with storage effect and its synthesizing method and use
08/05/2009CN101499437A Non-volatile memory device and method of manufacturing the same
08/05/2009CN101499314A Memory device and its updating method
08/05/2009CN100524882C Method for making memory cell device
08/05/2009CN100524880C I type phase change storage unit with heat insulation structure
08/05/2009CN100524879C Method for fabricating a pillar-shaped phase change memory element
08/05/2009CN100524874C Phase change tip storage cell, integrated circuit and manufacturing method thereof
08/05/2009CN100524873C Tunnel magnetoresistance device
08/05/2009CN100524793C Spin-injection magnetic random access memory
08/05/2009CN100524792C Magnetic memory device
08/05/2009CN100524773C Manufacturing method of memory, and memory
08/05/2009CN100524770C Layout structure of non-volatile memory
08/05/2009CN100524768C Memory array having a layer with electrical conductivity anisotropy
08/05/2009CN100524764C Memory and method of fabricating the same
08/05/2009CN100524528C Flash memory device having branch path
08/05/2009CN100524523C Semiconductor memory and method for operating the same
08/05/2009CN100524522C Nonvolatile semiconductor memory device with scalable two transistor memory cells
08/05/2009CN100524520C Non-volatile dynamic random access memory and operation method thereof
08/05/2009CN100524518C Memory cell having improved read stability, memory array and integrate circuit
08/05/2009CN100524517C Semiconductor storage device
08/05/2009CN100524516C Method and apparatus for independent refreshing memory capacity
08/05/2009CN100524515C Semiconductor memory device and information processing system
08/05/2009CN100524514C Efficient register for additive latency in DDR2 mode of operation
08/05/2009CN100524513C Multi-port memory device with global data bus connection circuit
08/05/2009CN100524512C Semiconductor memory element and semiconductor memory device
08/05/2009CN100524511C Ferroelectric random access memory device, display drive IC and electronic equipment
08/05/2009CN100524510C Storage and semiconductor device
08/05/2009CN100524506C Memory array with fast bit line precharge
08/05/2009CN100524170C Controller for controlling memory to low power consumption mode and control method therefor
08/04/2009US7571330 System and module including a memory device having a power down mode
08/04/2009US7571287 Multiport memory architecture, devices and systems including the same, and methods of using the same
08/04/2009US7570541 Semiconductor memory device
08/04/2009US7570538 Method for writing to multiple banks of a memory device
08/04/2009US7570535 Semiconductor integrated circuit device having memory macros and logic cores on board
08/04/2009US7570533 Completely transportable erasable memory apparatus and method
08/04/2009US7570523 Method for using two data busses for memory array block selection
08/04/2009US7570518 Concurrent programming of non-volatile memory
08/04/2009US7570517 Flash memory device adapted to prevent read failures due to dummy strings
08/04/2009US7570516 Three-dimensional semiconductor memory device having a first and second charge accumulation region
08/04/2009US7570515 Semiconductor memory having electrically erasable and programmable semiconductor memory cells
08/04/2009US7570513 Non-volatile memory and method with power-saving read and program-verify operations
08/04/2009US7570512 Phase change memory device with reduced unit cell size and improved transistor current flow and method for manufacturing the same
08/04/2009US7570511 Semiconductor memory device having a three-dimensional cell array structure
08/04/2009US7570510 Multi-bit spin memory
08/04/2009US7570509 Semiconductor device, logic circuit and electronic equipment
08/04/2009US7570508 Method and apparatus for reducing soft errors
08/04/2009US7570507 Quasi-differential read operation
08/04/2009US7570506 Ferroelectric memory device and electronic apparatus
08/04/2009US7570106 Substrate voltage generating circuit with improved level shift circuit
08/04/2009US7569902 Enhanced toggle-MRAM memory device
08/04/2009US7569882 Non-volatile multibit memory cell and method of manufacturing thereof
08/04/2009US7569881 Semiconductor integrated circuit device with reduced leakage current
08/04/2009US7569880 Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
08/04/2009US7569844 Memory cell sidewall contacting side electrode
08/04/2009US7568791 Nozzle arrangement with a top wall portion having etchant holes therein
08/04/2009US7568788 Printhead with barrier at chamber inlet
07/2009
07/30/2009WO2009093548A1 Semiconductor memory
07/30/2009WO2009093387A1 Magnetic random access memory and method for initializing the same
07/30/2009US20090193301 Semiconductor memory device and refresh period controlling method
07/30/2009US20090193180 Semiconductor memory device and control method for semiconductor memory device
07/30/2009US20090190409 Integrated Circuit, Cell Arrangement, Method for Operating an Integrated Circuit and for Operating a Cell Arrangement, Memory Module
07/30/2009US20090190402 Integrated SRAM and FLOTOX EEPROM memory device
07/30/2009US20090190394 Capacitorless dram on bulk silicon
07/30/2009US20090190393 Phase change memory device with dummy cell array
07/30/2009US20090190392 Electronic device, method of manufacturing the same, and storage device
07/30/2009US20090190391 Magnetoresistive random access memory
07/30/2009US20090190390 Integrated Circuits, Cell, Cell Arrangement, Method of Reading a Cell, Memory Module
07/30/2009US20090190389 Multi-port sram with six-transistor memory cells
07/30/2009US20090190388 Resistive memory and methods for forming same
07/30/2009US20090190387 Semiconductor device
07/30/2009US20090190386 Hybrid content addressable memory
07/30/2009US20090190385 SRAM including reduced swing amplifiers
07/30/2009US20090189209 Semiconductor memory device
07/30/2009DE10349464B4 Pegelumsetz-Einrichtung Pegelumsetz device
07/30/2009DE10049029B4 Schaltung und Verfahren zur Latenzbestimmung, Pufferschaltung mit variabler Latenz und Speicherbauelement Circuit and method for determining latency, buffer circuit with variable latency and memory device