Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
09/2009
09/16/2009EP1634333B1 STACKED 1T-n MEMORY CELL STRUCTURE
09/16/2009EP1595251B1 Write-once optical disc, and method and apparatus for allocating spare area on write-once optical disc
09/16/2009CN101533892A Resistive memory devices and method of forming the same
09/16/2009CN101533891A Nonvolatile resistance variation memory structure and preparation method
09/16/2009CN101533849A Resistive memory devices and method of forming the same
09/16/2009CN101533668A Memory circuit and charge sensing method
09/16/2009CN101533662A Flash memory read-write method and flash memory apparatus
09/16/2009CN101533333A Computer system with addressable digital data access
09/16/2009CN100541819C Self-aligned conductive lines for FET-based magnetic random access memory devices and method of forming it
09/16/2009CN100541664C Resistance random access memory and methods of storage operating same
09/16/2009CN100541663C Nonvolatile semiconductor memory device which stores multivalue data
09/16/2009CN100541662C Cascade wake-up circuit preventing power noise in memory device
09/16/2009CN100541661C Semiconductor memory device
09/16/2009CN100541660C Semiconductor memory device
09/16/2009CN100541659C Memory array having 2T memory cells
09/16/2009CN100541658C Semiconductor memory device
09/16/2009CN100541657C Storage device and wait control circuit
09/16/2009CN100541656C Semiconductor memory having variable memory size and method for refreshing the same
09/16/2009CN100541655C Semiconductor memory device
09/16/2009CN100541654C Memory device
09/16/2009CN100541653C Active shielding for a circuit comprising magnetically sensitive materials
09/16/2009CN100541652C Magnetic tunneling junction cell and magnetic random access memory
09/16/2009CN100541651C Organic electric bistable thin film and storage device applying same and over voltage protector
09/16/2009CN100541650C Non-volatile memory array and address conversion method
09/16/2009CN100541644C Integrate circuit
09/16/2009CN100541458C Input/output interface of an integrated circuit device
09/16/2009CN100541383C Interpolating circuit and DLL circuit and semi-conductor integrated circuit
09/15/2009US7590522 Virtual mass storage device for server management information
09/15/2009US7590473 Thermal management using an on-die thermal sensor
09/15/2009US7590020 Semiconductor memory, semiconductor memory system and method of monitoring dynamic temperature thereof
09/15/2009US7590013 Semiconductor memory devices having variable additive latency
09/15/2009US7590007 Nonvolatile semiconductor memory device
09/15/2009US7590005 Program and erase methods with substrate transient hot carrier injections in a non-volatile memory
09/15/2009US7589999 Method and apparatus for programming non-volatile data storage device
09/15/2009US7589998 Non-volatile memory device and method of operation therefor
09/15/2009US7589995 One-transistor memory cell with bias gate
09/15/2009US7589994 Methods of writing data to magnetic random access memory devices with bit line and/or digit line magnetic layers
09/15/2009US7589993 Semiconductor memory device with memory cells operated by boosted voltage
09/15/2009US7589992 Semiconductor device having three dimensional structure
09/15/2009US7588329 Print roll unit provided with pinch rollers and a drive roller
09/15/2009US7588316 Wide format print assembly having high resolution printhead
09/11/2009WO2009110537A1 Mram mixed system
09/11/2009WO2009110532A1 Semiconductor device
09/11/2009WO2009110530A1 Semiconductor device
09/11/2009WO2009110040A1 Memory device, memory system, and access timing adjusting method in memory system
09/11/2009WO2009088020A3 Semiconductor memory and program
09/10/2009US20090225616 Memory that retains data when switching partial array self refresh settings
09/10/2009US20090225606 Erase block data splitting
09/10/2009US20090225594 Multi-level nonvolatile memory device using variable resistive element
09/10/2009US20090225592 Suspended structures
09/10/2009US20090225591 Resistive memory device
09/10/2009US20090225590 Phase change random access memory
09/10/2009US20090225589 Phase change memory device accounting for volume change of phase change material and method for manufacturing the same
09/10/2009US20090225588 Memory Device
09/10/2009US20090225587 Magnetoresistive element
09/10/2009US20090225586 Semiconductor memory device
09/10/2009US20090225584 Random access memory with cmos-compatible nonvolatile storage element in series with storage capacitor
09/10/2009US20090225583 Resistive memory device for programming resistance conversion layers and method thereof
09/10/2009US20090225582 Data retention structure for non-volatile memory
09/10/2009US20090224823 Internal voltage generating circuit and semiconductor integrated circuit device
09/10/2009US20090224143 Semiconductor integrated circuit and ic card system
09/10/2009DE10341557B4 DQS-Postambel-Rauschunterdrückung durch Erzwingen einer minimalen Pulslänge DQS postamble noise reduction by enforcing a minimum pulse length
09/09/2009CN101529522A A method for recovering from errors in flash memory
09/09/2009CN101529521A Two-port SRAM having improved write operation
09/09/2009CN101529396A Memory device and refresh adjusting method
09/09/2009CN101527555A Sampling circuit and sampling method
09/09/2009CN101527168A Correcting circuit and correcting method for data controlling signal
09/09/2009CN101527167A Memory element and display device
09/09/2009CN101527166A Nonvolatile magnetic memory device
09/09/2009CN100539195C Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
09/09/2009CN100539159C Sidewall formation for high density polymer memory element array
09/09/2009CN100538910C Memory cell test device and method
09/09/2009CN100538906C Non-volatile memory and method with bit line coupled compensation
09/09/2009CN100538903C Nonvolatile semiconductor memory
09/09/2009CN100538899C Memory with discrete charge storage elements and programming method thereof
09/09/2009CN100538896C Method and system for programming and inhibiting multi-level, non-volatile memory cells
09/09/2009CN100538895C Storage device and manufacturing method thereof
09/09/2009CN100538894C Stacked organic memory devices and methods of operating and fabricating
09/09/2009CN100538893C Serially sensing the output of multilevel cell arrays
09/09/2009CN100538892C Hybrid density memory card
09/09/2009CN100538891C Multiport semiconductor memory device
09/09/2009CN100538890C SRAM unit and array
09/09/2009CN100538889C One time programming memory cell, memory cell matrix and storage device
09/09/2009CN100538888C Storage unit detecting circuit with power-saving and speed promotion capability and its method
09/09/2009CN100538887C Semiconductor device
09/09/2009CN100538886C Multidimensional array rapid read-write method and apparatus on dynamic random access memory
09/09/2009CN100538885C Circuit and method for changing page length in semiconductor memory
09/09/2009CN100538884C Semiconductor storage device
09/09/2009CN100538883C Memory device
09/09/2009CN100538882C Synchronous dynamic storage controller designing method
09/09/2009CN100538881C Configurable logic memory devices
09/09/2009CN100538880C 半导体存储器件 The semiconductor memory device
09/09/2009CN100538879C Semiconductor memory device with improved saving rate for defective chips
09/09/2009CN100538878C A programmable conductor random access memory and a method for writing thereto
09/09/2009CN100538877C Multi-probe for writing and reading data and method of operating the same
09/09/2009CN100538876C Method and circuit for sensing output from memory cell
09/09/2009CN100538875C Magnetoresistive element, magnetic memory cell, and magnetic memory device, and method for manufacturing the same
09/09/2009CN100538874C Composite storage circuit and semiconductor device having the same
09/09/2009CN100538873C System and method of four-conductor mangnetic random access memory cell and decoding scheme
09/09/2009CN100538869C Memory having variable refresh control and method therefor
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