Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
06/2009
06/25/2009WO2009078202A1 Magnetic memory element, method for driving the magnetic memory element, and nonvolatile storage device
06/25/2009WO2008024171A8 Dram transistor with recessed gates and methods of fabricating the same
06/25/2009US20090162979 Thyristor device with carbon lifetime adjustment implant and its method of fabrication
06/25/2009US20090161467 Memory device and refresh method thereof
06/25/2009US20090161439 Nonvolatile Semiconductor Memory Device
06/25/2009US20090161427 Non-volatile semiconductor storage device
06/25/2009US20090161424 Thermally assisted magnetic write memory
06/25/2009US20090161423 Magnetic random access memory
06/25/2009US20090161422 Magnetic Tunnel Junction Device with Separate Read and Write Paths
06/25/2009US20090161421 Phase change memory devices and systems, and related programming methods
06/25/2009US20090161420 Field-emitter-based memory array with phase-change storage devices
06/25/2009US20090161419 Nonvolatile memory, memory system, and method of driving
06/25/2009US20090161418 Phase change memory device having decentralized driving units
06/25/2009US20090161417 Two cell per bit phase change memory
06/25/2009US20090161416 Optimized phase change write method
06/25/2009US20090161415 Integrated circuit for setting a memory cell based on a reset current distribution
06/25/2009US20090161414 Spin Torque Magnetic Memory and Offset Magnetic Field Correcting Method Thereof
06/25/2009US20090161413 MRAM Device with Shared Source Line
06/25/2009US20090161412 Semiconductor memory
06/25/2009US20090161411 Semiconductor memory device
06/25/2009US20090161410 Seven transistor sram cell
06/25/2009US20090161409 Charge mapping memory array formed of materials with mutable electrical characteristics
06/25/2009US20090161408 Semiconductor memory device
06/25/2009US20090161407 Drive Method of Nanogap Switching Element and Storage Apparatus Equipped with Nanogap Switching Element
06/25/2009US20090161406 Non-volatile memory and method for fabricating the same
06/25/2009US20090161405 Data storage medium and associated method
06/25/2009US20090161404 Asymmetric dipolar ring
06/25/2009US20090160910 Inkjet printhead with heater element close to drive circuits
06/25/2009US20090159867 Phase change memory with layered insulator
06/25/2009DE102008044304A1 Befehlsprotokoll für integrierte Schaltungen Command protocol for integrated circuits
06/25/2009CA2808570A1 Magnetic tunnel junction device with separate read and write paths
06/25/2009CA2710334A1 Magnetic tunnel junction device with separate read and write paths
06/25/2009CA2710332A1 Mram device with shared source line
06/24/2009EP2073285A2 A high performance MTJ element for STT-RAM and method for making the same
06/24/2009EP2073266A1 Drive method of nanogap switching element and storage apparatus equipped with nanogap switching element
06/24/2009EP2073213A1 Data storage device using magnetic domain wall movement and method of operating the data storage device
06/24/2009EP2073210A1 Magnetic memory with heat-assisted writing
06/24/2009CN101465160A Semiconductor storage device
06/24/2009CN101465159A RAM and method for updating data thereof
06/24/2009CN101465158A Semiconductor memory, memory system, and memory access control method
06/24/2009CN101465157A Circuit for generating dynamic self-adapting referrence of 1T1C ferro-electric memory
06/24/2009CN101465156A Information memory device and memory medium
06/24/2009CN100505543C Output buffer circuit of logic gate including balance output node
06/24/2009CN100505212C Standard cell, semiconductor integrated circuit device and layout design method for semiconductor integrated circuit device
06/24/2009CN100505100C Multi level flash memory device and program method
06/24/2009CN100505096C Method and system for multilevel cell memory
06/24/2009CN100505095C Semiconductor memory device for low power system, apparatus and method
06/24/2009CN100505094C Semiconductor memory access architecture and operating method
06/24/2009CN100505093C Semiconductor device
06/24/2009CN100505092C Shared decoupling capacitance
06/24/2009CN100505091C Semiconductor memory device having external data load signal and serial-to-parallel data prefetch method thereof
06/24/2009CN100505090C Ferroelectric recording medium and writing method for the same
06/24/2009CN100505089C Method, circuit and manufacturing method for storing data by using ferroelectric memory
06/24/2009CN100505088C Semiconductor memory device and data reading out method
06/24/2009CN100505087C Magnetic random access memory device
06/24/2009CN100505086C MRAM architecture for low power consumption and high selectivity
06/24/2009CN100505085C Film magnet storage device of multi-storage unit shared access element
06/24/2009CN100505081C Memory device with selectively connectable segmented bit line member and method of driving the same
06/23/2009US7552307 Method for initializing a random access memory
06/23/2009US7552267 Automatic detection of the bit width of a data bus
06/23/2009US7551493 Data processing device
06/23/2009US7551491 Unit cell of a non-volatile memory device, a non-volatile memory device and method thereof
06/23/2009US7551484 Non-volatile memory and method with reduced source line bias errors
06/23/2009US7551481 User configurable commands for flash memory
06/23/2009US7551480 Multi-bit flash memory device and memory cell array
06/23/2009US7551477 Multiple bit line voltages based on distance
06/23/2009US7551476 Resistive memory having shunted memory cells
06/23/2009US7551475 Data shifting through scan registers
06/23/2009US7551474 DRAM including a reduced storage capacitor
06/23/2009US7551473 Programmable resistive memory with diode structure
06/23/2009US7551472 Ferroelectric semiconductor memory device
06/23/2009US7551202 Digital camera with integrated inkjet printer
06/23/2009US7551201 Image capture and processing device for a print on demand digital camera system
06/23/2009US7550181 Information recording medium
06/23/2009US7549732 Printhead having nozzle arrangements with sealing structures
06/23/2009US7549731 Inkjet printer having a printhead with a bi-layer thermal actuator coil
06/23/2009US7549728 Micro-electromechanical ink ejection mechanism utilizing through-wafer ink ejection
06/18/2009WO2009076511A2 Memory device with self-refresh operations
06/18/2009WO2009074411A1 Magnetic memory with a thermally assisted writing procedure
06/18/2009WO2009073952A1 Semiconductor memory device suitable for interconnection in a ring topology
06/18/2009WO2009044904A3 Semiconductor memory device
06/18/2009US20090154566 Memory cell circuit, memory device, motion vector detector, and motion compensation predictive encoder
06/18/2009US20090154267 Clock signal generating circuit and data output apparatus using the same
06/18/2009US20090154265 Semiconductor memory device with hierarchical bit line structure
06/18/2009US20090154262 Semiconductor device and method for writing data into memory
06/18/2009US20090154254 Cluster based non-volatile memory translation layer
06/18/2009US20090154248 Nonvolatile memory device storing data based on change in transistor characteristics
06/18/2009US20090154231 Magnetic Random Access Memory and Operating Method of the Same
06/18/2009US20090154230 Magnetic memory device and method
06/18/2009US20090154229 Sensing and writing to magnetic random access memory (mram)
06/18/2009US20090154228 Random Access Memory Employing Read Before Write for Resistance Stabilization
06/18/2009US20090154227 Integrated circuit including diode memory cells
06/18/2009US20090154226 Integrated circuit including quench devices
06/18/2009US20090154225 Thin film magnetic memory device having a highly integrated memory array
06/18/2009US20090154224 Magnetic random access memory and write method of the same
06/18/2009US20090154223 Method and device for demultiplexing a crossbar non-volatile memory
06/18/2009US20090154222 Operation method for multi-level switching of metal-oxide based rram
06/18/2009US20090154221 Non-Volatile memory device using variable resistance element with an improved write performance
06/18/2009US20090154220 Plateline driver for a ferroelectric memory
06/18/2009US20090154219 Three-dimensional magnetic memory with multi-layer data storage layers