Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
05/2009
05/28/2009DE10311823B4 Verzögerungsleitungsschaltung und zugehöriges Steuerverfahren Delay line circuit and associated control method
05/27/2009EP2062263A2 Method and apparatus for dual data-dependent busses for coupling read/write circuits to a memory array
05/27/2009EP2062261A1 Scalable memory system
05/27/2009EP2018642A4 Low temperature deposition of phase change memory materials
05/27/2009EP1805766A4 Spin-transfer based mram using angular-dependent selectivity
05/27/2009EP1523712B1 A system, apparatus, and method for a flexible dram architecture
05/27/2009CN101442103A Phase change memory device for multibit storage
05/27/2009CN101441888A Method and apparatus for simultaneous differential data sensing and capture in a high speed memory
05/27/2009CN100492892C Bit-line sense amplifier
05/27/2009CN100492694C Phase change merhory and method with recovery function
05/27/2009CN100492539C Nonvolatile semiconductor memory device for writing multivalued data
05/27/2009CN100492536C A biasing technique for a high density SRAM
05/27/2009CN100492535C Bias voltage applying circuit and semiconductor memory device
05/27/2009CN100492534C Internal voltage generator for semiconductor memory device
05/27/2009CN100492533C Device and method for controlling active terminal resistance in memory system
05/27/2009CN100492532C Semiconductor memory device
05/27/2009CN100492531C Ferro-electric storage device with different connected anode wires in line
05/27/2009CN100492530C Programmable magnetic memory device FP-MRAM
05/27/2009CN100492529C Magnetic rendom access stroage
05/27/2009CN100492528C Magnetoresistance device of soft reference layer containing embedded conductor
05/27/2009CN100492527C Write driver for a magnetoresistive memory
05/27/2009CN100492526C Method and device for assisting double MONOS unit writing-in and erasion utilizing block voltage
05/27/2009CN100492320C Detection circuit for mixed asynchronous and synchronous memory operation
05/26/2009US7539073 Memory device with auxiliary precharge unit to improve precharge operation for bit line circuitry
05/26/2009US7539064 Precharge circuit of semiconductor memory apparatus
05/26/2009US7539063 Flash memory devices and programming methods for the same
05/26/2009US7539062 Interleaved memory program and verify method, device and system
05/26/2009US7539061 Method of programming flash memory device
05/26/2009US7539059 Selective bit line precharging in non volatile memory
05/26/2009US7539058 Non-volatile memory and operating method thereof
05/26/2009US7539051 Memory storage devices comprising different ferromagnetic material layers, and methods of making and using the same
05/26/2009US7539050 Resistive memory including refresh operation
05/26/2009US7539049 Magnetic random access memory and operation method
05/26/2009US7539048 Method and apparatus processing variable resistance memory cell write operation
05/26/2009US7539047 MRAM cell with multiple storage elements
05/26/2009US7539046 Integrated circuit with magnetic memory
05/26/2009US7539045 Method and device for improved magnetic field generation during a write operation of a magnetoresistive memory device
05/26/2009US7539044 Memory device with capacitor and diode
05/26/2009US7539042 Semiconductor device and fabrication method thereof
05/26/2009US7539041 Floating body semiconductor memory device and method of operating the same
05/26/2009US7539040 Nonvolatile semiconductor memory device
05/26/2009US7539039 Integrated circuit having a resistive switching device
05/26/2009US7539038 Nonvolatile nanochannel memory device using organic-inorganic complex mesoporous material
05/26/2009US7539035 Memory system capable of changing configuration of memory modules
05/26/2009US7538754 Signal circuit, display apparatus including same, and method for driving data line
05/26/2009US7538395 Method of forming low capacitance ESD device and structure therefor
05/26/2009US7537301 Wide format print assembly having high speed printhead
05/22/2009WO2009065084A1 Integrated circuit embedded with non-volatile programmable memory having variable coupling
05/22/2009WO2009035834A3 Nonvolatile memory and method for on-chip pseudo-randomization of data within a page and between pages
05/22/2009WO2004003924A3 Circuit and method for reading a toggle memory cell
05/21/2009US20090129190 Driving a memory matrix of resistance hysteresis elements
05/21/2009US20090129178 Integrated Circuit Memory Device Having Delayed Write Timing Based on Read Response Time
05/21/2009US20090129176 High Speed Array Pipeline Architecture
05/21/2009US20090129167 Semiconductor magnetic memory integrating a magnetic tunneling junction above a floating-gate memory cell
05/21/2009US20090129156 Non-volatile semiconductor storage device
05/21/2009US20090129152 Program and read method for mlc
05/21/2009US20090129149 Nonvolatile semiconductor memory device for writing multivalued data
05/21/2009US20090129145 Memory Cell Array Comprising Floating Body Memory Cells
05/21/2009US20090129144 Phase change memory and method discharging bitline
05/21/2009US20090129143 Spin transfer MRAM device with separated CPP assisted writing
05/21/2009US20090129142 Semiconductor memory
05/21/2009US20090129141 Semiconductor memory device
05/21/2009US20090129140 Nonvolatile Semiconductor Storage Device and Method for Operating Same
05/21/2009US20090129139 Nano-electro-mechanical memory cells and devices
05/21/2009US20090128606 Integrated circuit (ic) incorporating rows of proximal ink ejection ports
05/21/2009US20090128604 Inkjet nozzle with paddle layer sandwiched between first and second wafers
05/21/2009US20090127613 Nonvolatile semiconductor memory device and method of manufacturing the same
05/21/2009US20090127602 Semiconductor memory device and manufacturing method thereof
05/20/2009EP2061036A1 Memory device, memory controller and memory system
05/20/2009EP1999756A4 Non-volatile memory with controlled program/erase
05/20/2009EP1934985A4 Method and apparatus for programming/erasing a non-volatile memory
05/20/2009EP1751765A4 Controllable nanomechanical memory element
05/20/2009EP1658618B1 Error detection and correction method and apparatus in a magneto-resistive random access memory
05/20/2009DE10313365B4 Genauigkeitsbestimmung bei Bitleitungsspannungmessungen Accuracy in determination Bitleitungsspannungmessungen
05/20/2009DE102004015534B4 Speicherbauelement und Verfahren zum Ausgeben von Daten aus einem Speicherbauelement Memory device and method for outputting data from a memory device
05/20/2009CN101438400A Dynamic memory cell structures
05/20/2009CN101438353A Non-volatile memory with background data latch caching during read operations and methods therefor
05/20/2009CN101438351A Methods for erasing memory devices and multi-level programming memory device
05/20/2009CN101436643A Phase change memory cell including a thermal protect bottom electrode and manufacturing methods
05/20/2009CN101436607A Electric resistance transition memory and manufacturing method thereof
05/20/2009CN101436594A 半导体集成电路 The semiconductor integrated circuit
05/20/2009CN101436429A Semiconductor storage device
05/20/2009CN100490156C Voltage booster for non-volatile memories
05/20/2009CN100490152C Non-volatile memory cell and related operation method
05/20/2009CN100490012C Semiconductor memory and driving method thereof
05/20/2009CN100490011C Circuit of local word line driver of DRAM
05/20/2009CN100490010C Semiconductor memory device
05/20/2009CN100490009C Semiconductor memory device
05/20/2009CN100490008C Refresh port for a dynamic memory
05/20/2009CN100490007C Spatial light modulator with charge-pump pixel cell
05/20/2009CN100490006C A method for fabricating a flux concentrating system for use in a magnetoelectronic device
05/20/2009CN100490005C Multiposition magnetic memory
05/20/2009CN100490004C Write current compensation for storing temperature change in array
05/20/2009CN100490003C Magnetic resistance element, storage element using same and relative recording/reproducing method
05/20/2009CN100490001C Non-volatile memory unit array with segmented bit line and operation method
05/19/2009US7536612 Field spike monitor for MRAM
05/19/2009US7535781 Semiconductor memory
05/19/2009US7535776 Circuit for improved SRAM write around with reduced read access penalty
05/19/2009US7535770 Flash memory device with reduced drain stresses
05/19/2009US7535769 Time-dependent compensation currents in non-volatile memory read operations