Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
10/2009
10/15/2009US20090257102 Image processing apparatus having card reader for applying effects stored on a card to a stored image
10/15/2009US20090256588 Programmable array logic circuit employing non-volatile ferromagnetic memory cells
10/15/2009US20090256205 2-t sram cell structure and method
10/15/2009DE10053366B4 Eingangspufferschaltungen mit einer Signalverstärkungsfähigkeit und dazugehörige Arbeitsverfahren Input buffer circuits with a signal amplification capability and associated work practices
10/14/2009EP2109123A1 Apparatus for storing electrical energy
10/14/2009EP2109111A1 System and method for writing data to magnetoresistive random access memory cells
10/14/2009EP2108493A1 Electromechanical three-trace junction devices
10/14/2009EP2108182A2 Semiconductor memory device
10/14/2009EP1886320B1 Method for extracting the distribution of charge stored in a semiconductor device
10/14/2009EP1658615B1 Oblique reflector normal incidence collector system for light sources, in particular for euv plasma discharge sources
10/14/2009CN101558449A Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
10/14/2009CN101556986A Multi-state resistive switching material, thin film prepared therewith, multi-sate resistive switching memory element and application of memory element in memory device
10/14/2009CN101556826A Memory system and related method thereof
10/14/2009CN101556825A Integrated circuit
10/14/2009CN101556824A Semiconductor memory device
10/14/2009CN101556821A Voltage adjuster of semiconductor memory
10/14/2009CN100550641C N-shape dominoes register with accelerate non-charge path
10/14/2009CN100550462C Resistor random access memory cell with l-shaped electrode
10/14/2009CN100550461C Phase change memory cell with vacuum spacer
10/14/2009CN100550459C Method for improving the pulse trigger resistor random memory fatigue resisting characteristic
10/14/2009CN100550458C Storage element and memory
10/14/2009CN100550457C Methods and apparatus for thermally assisted programming of a magnetic memory device
10/14/2009CN100550456C MgO dual-potential magnetic tunnel junction with quanta effect and its uses
10/14/2009CN100550455C Nano magnetic memory device and method of manufacturing the same
10/14/2009CN100550409C Phase change memory with diode unit selective connection and its making method
10/14/2009CN100550408C Non-volatile memory element and method of manufacturing the same
10/14/2009CN100550391C Ferroelectric capacitor and ferroelectric field effect tube and manufacturing method thereof
10/14/2009CN100550207C Flash memory device including bit line voltage clamp circuit for controlling bit line voltage, and bit line voltage control method thereof
10/14/2009CN100550205C Non-volatile memory system and method for programming of non-volatile memory
10/14/2009CN100550201C Nonvolatile memory device and method for storing status information using multiple strings
10/14/2009CN100550200C Synchronous type semiconductor device
10/14/2009CN100550199C Memorizer control circuit and method
10/14/2009CN100550198C Semiconductor storage device with delayed automatic precharge function and related method thereof
10/14/2009CN100550197C Semiconductor memory
10/14/2009CN100550196C Semiconductor storage device
10/14/2009CN100550195C Boosted voltage generating circuit and method in semiconductor memory device
10/14/2009CN100550194C Memory
10/14/2009CN100550193C Storage device using resistance varying storage element and reference resistance value decision method for the device
10/14/2009CN100550192C Methods for reading and writing a magnetic memory device
10/14/2009CN100550191C Universally accessible fully programmable memory built-in self-test (mbist) system and method
10/14/2009CN100550189C Methdo for storing data, device for mapping transaction and write data line method
10/14/2009CN100550187C Accelerated life test of MRAM cells
10/14/2009CN100550185C Semiconductor device
10/14/2009CN100550184C Semiconductor device
10/13/2009US7603535 Low power consumption semiconductor memory device capable of selectively changing input/output data width and data input/output method
10/13/2009US7603525 Flash memory management method that is resistant to data corruption by power loss
10/13/2009US7603510 Semiconductor device and storage cell having multiple latch circuits
10/13/2009US7602665 Semiconductor integrated circuit device
10/13/2009US7602659 Memory device having shared fail-repairing circuit capable of repairing row or column fails in memory cell arrays of memory banks
10/13/2009US7602653 Multimode data buffer and method for controlling propagation delay time
10/13/2009US7602652 Systems for programming differently sized margins and sensing with compensations at select states for improved read operations in non-volatile memory
10/13/2009US7602650 Flash memory device and method for programming multi-level cells in the same
10/13/2009US7602648 Program method of flash memory device
10/13/2009US7602647 System that compensates for coupling based on sensing a neighbor using coupling
10/13/2009US7602644 Memory devices with page buffer having dual registers and method of using the same
10/13/2009US7602642 Nonvolatile memory system and associated programming methods
10/13/2009US7602641 Method of making a non-volatile memory (NVM) cell structure and program biasing techniques for the NVM cell structure
10/13/2009US7602638 Semiconductor memory device
10/13/2009US7602637 Integrated circuits; methods for operating an integrating circuit; memory modules
10/13/2009US7602636 Spin MOSFET
10/13/2009US7602635 Structure for a configurable SRAM system and method
10/13/2009US7602634 Dynamic RAM storage techniques
10/13/2009US7602633 Non-volatile memory device, method of manufacturing the same, and method of operating the same
10/13/2009US7602632 Multi-level memory cell utilizing measurement time delay as the characteristic parameter for level definition
10/13/2009US7602631 Multi-level memory cell utilizing measurement time delay as the characteristic parameter for level definition
10/13/2009US7602423 Integrated circuit for a digital camera system
10/13/2009US7602000 Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element
10/13/2009US7601547 Magnetic annealing sequences for patterned MRAM synthetic antiferromagnetic pinned layers
10/13/2009CA2433887C Chemical monolayer and micro-electronic junctions and devices containing same
10/08/2009WO2009123874A1 Array structural design of magnetoresistive random access memory (mram) bit cells
10/08/2009WO2009122995A1 Magnetoresistive storage device
10/08/2009WO2009122992A1 Magnetoresistance storage
10/08/2009WO2009122990A1 Magnetoresistive effect element and magnetic random access memory
10/08/2009WO2009122598A1 Logic circuit
10/08/2009WO2009122519A1 Magnetic random access memory
10/08/2009US20090251965 Nonvolatile memory device including circuit formed of thin film transistors
10/08/2009US20090251960 High temperature memory device
10/08/2009US20090251959 Semiconductor memory device and driving method thereof
10/08/2009US20090251958 Read circuitry for an integrated circuit having memory cells and/or a memory cell array, and method of operating same
10/08/2009US20090251957 System and method for writing data to magnetoresistive random access memory cells
10/08/2009US20090251956 Magnetic random access memory devices, methods of driving the same and data writing and reading methods for the same
10/08/2009US20090251955 Mram and data read/write method for mram
10/08/2009US20090251954 Variable resistance memory device and system
10/08/2009US20090251953 Variable resistance memory device
10/08/2009US20090251952 State machine sensing of memory cells
10/08/2009US20090251951 Magnetoresistive element and magnetic random access memory
10/08/2009US20090251950 Integrated Circuit, Memory Cell Arrangement, Thermal Select Magneto-Resistive Memory Cell, Method of Operating a Thermal Select Magneto-Resistive Memory Cell, and Method of Manufacturing a Thermal Select Magneto-Resistive Memory Cell
10/08/2009US20090251949 Array Structural Design of Magnetoresistive Random Access Memory (MRAM) Bit Cells
10/08/2009US20090251948 Semiconductor memory device
10/08/2009US20090251947 Semiconductor device having single-ended sensing amplifier
10/08/2009US20090251946 Data cells with drivers and methods of making and operating the same
10/08/2009US20090251945 System and method of operation for resistive change memory
10/08/2009US20090251944 Memory cell having improved mechanical stability
10/08/2009US20090251942 Method of programming a memory device of the one-time programmable type and integrated circuit incorporating such a memory
10/08/2009US20090251940 Nonvolatile semiconductor memory device using a variable resistance film and method of manufacturing the same
10/08/2009US20090251737 Processor For Image Capture And Printing
10/08/2009US20090251546 Digital camera with postcard printing
10/08/2009US20090250691 Phase change memory element and method for forming the same
10/08/2009DE112007003085T5 Fühlereinrichtung für Speicherzelle mit einem Körper frei einstellbarem Potential und Verfahren Sensing means for memory cell having a body freely adjustable potential and methods
10/08/2009CA2719700A1 Array structural design of magnetoresistive random access memory (mram) bit cells
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