| Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008) |
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| 04/22/2009 | EP1472566A4 Liquid crystal display and driving method thereof and frame memory |
| 04/22/2009 | EP1454323B1 Half density rom embedded dram |
| 04/22/2009 | CN101416298A Semiconductor memory device |
| 04/22/2009 | CN101414659A Multi-state memory unit and method for storing data state and forming memory unit |
| 04/22/2009 | CN101414481A Phase-change memory cell based on SiSb composite material |
| 04/22/2009 | CN101414480A Control device for phase-change memory cell and method for adding phase-change memory cell reliability |
| 04/22/2009 | CN100481555C I-shaped phase change memory cell, manufacturing method thereof, and array including the same |
| 04/22/2009 | CN100481554C Chalcogenide-applied memory and fabricating method thereof |
| 04/22/2009 | CN100481551C Storage device array magnetic bit with of with sharing one common line |
| 04/22/2009 | CN100481518C 自旋晶体管 Spin Transistors |
| 04/22/2009 | CN100481498C Transistor of volatile memory device with gate dielectric structure and method for fabricating the same |
| 04/22/2009 | CN100481459C Nand flash memory with nitride charge storage gates and fabrication process and manufacturing method thereof |
| 04/22/2009 | CN100481451C Semiconductor integrated circuit device |
| 04/22/2009 | CN100481389C Programmable resistive RAM and manufacturing method thereof |
| 04/22/2009 | CN100481266C Multi-port memory device for buffering between hosts and non-volatile memory devices |
| 04/22/2009 | CN100481265C Method for changing and reading the content in a memory |
| 04/22/2009 | CN100481261C Memory and method for prolonging the service life of the memory |
| 04/22/2009 | CN100481260C Method for driving non-volatile DRAM, and unit cell therein |
| 04/22/2009 | CN100481259C Method of driving a non-volatile flip-flop circuit using variable resistor elements |
| 04/22/2009 | CN100481258C Hole annealing methods of non-volatile memory cells |
| 04/22/2009 | CN100481257C Memory device and dual port static RAM |
| 04/22/2009 | CN100481256C Bit line sense amplifier and semiconductor memory device having the same |
| 04/22/2009 | CN100481255C Semiconductor memory device with on-die termination circuit |
| 04/22/2009 | CN100481254C Storage apparatus and semiconductor apparatus |
| 04/22/2009 | CN100481253C Semiconductor memory device with proper sensing timing |
| 04/22/2009 | CN100481252C Buried magnetic tunnel junction storage cell and method |
| 04/22/2009 | CN100481251C Magnetic-resistance storage unit structure and magnetic-resistance random access memory circuit |
| 04/22/2009 | CN100481249C Thin film magnetic memory device provided with magnetic tunnel junctions |
| 04/21/2009 | US7522466 DRAM power bus control |
| 04/21/2009 | US7522457 Systems for erase voltage manipulation in non-volatile memory for controlled shifts in threshold voltage |
| 04/21/2009 | US7522456 Non-volatile memory embedded in a conventional logic process and methods for operating same |
| 04/21/2009 | US7522455 Method and system for reducing soft-writing in a multi-level flash memory |
| 04/21/2009 | US7522454 Compensating for coupling based on sensing a neighbor using coupling |
| 04/21/2009 | US7522451 High program speed MLC memory |
| 04/21/2009 | US7522450 Magnetic storage cell, magnetic memory device and magnetic memory device manufacturing method |
| 04/21/2009 | US7522449 Phase change memory device and related programming method |
| 04/21/2009 | US7522448 Controlled pulse operations in non-volatile memory |
| 04/21/2009 | US7522447 Magnetic memory devices and methods of forming the same |
| 04/21/2009 | US7522446 Heating MRAM cells to ease state switching |
| 04/21/2009 | US7522445 Semiconductor memory |
| 04/21/2009 | US7522444 Memory circuit, method for operating a memory circuit, memory device and method for producing a memory device |
| 04/21/2009 | US7522388 Magnetoresistance effect element having a lower magnetic layer formed over a base substrate through a transition metal oxide layer having a predetermined orientation plane |
| 04/21/2009 | US7521762 Semiconductor integrated circuit device operating with low power consumption |
| 04/21/2009 | US7521743 Nonvolatile magnetic memory device and photomask |
| 04/21/2009 | US7521736 Electromechanical three-trace junction devices |
| 04/21/2009 | US7521706 Phase change memory devices with contact surface area to a phase changeable material defined by a sidewall of an electrode hole and methods of forming the same |
| 04/21/2009 | US7521264 Spin injection control using electric current |
| 04/16/2009 | WO2009049122A1 Magnetic element having reduced current density |
| 04/16/2009 | WO2009048025A1 Nonvolatile solid state magnetic memory recording method and nonvolatile solid state magnetic memory |
| 04/16/2009 | WO2009046515A1 Interlock of read column select and read databus precharge control signals |
| 04/16/2009 | WO2008021646A3 Eeprom memory array having 5f2 cells |
| 04/16/2009 | WO2007132457A3 Combined distortion estimation and error correction coding for memory devices |
| 04/16/2009 | WO2007132456A3 Memory device with adaptive capacity |
| 04/16/2009 | WO2007120159A3 Magnetic tunnel junction antifuse circuit comprising parallel connected reference magnetic tunnel junctions to provide an optimum reference resistance |
| 04/16/2009 | WO2007106071A3 Method for switching magnetic random access memory elements and magnetic element structures |
| 04/16/2009 | WO2007086050A3 Device having an array of non-volatile memory cells and a method for altering a state of a non-volatile memory cell |
| 04/16/2009 | WO2007025050A3 Spin-transfer switching magnetic elements using ferrimagnets and magnetic memories using the magnetic elements |
| 04/16/2009 | WO2006091484A3 Error reduction circuit for chalcogenide devices |
| 04/16/2009 | WO2006031260A3 Molecular memory and processing systems and methods therefor |
| 04/16/2009 | US20090097338 Memory Device Receiver |
| 04/16/2009 | US20090097330 Fuse latch circuit and fuse latch method |
| 04/16/2009 | US20090097309 Nonvolatile semiconductor storage device, and method for controlling nonvolatile semiconductor storage device |
| 04/16/2009 | US20090097308 Multivalue memory storage with two gating transistors |
| 04/16/2009 | US20090097307 Phase-change random access memory device, system having the same, and associated methods |
| 04/16/2009 | US20090097306 Phase-change random access memory device, system having the same, and associated methods |
| 04/16/2009 | US20090097305 Method of forming phase change material layer using ge(ii) source, and method of fabricating phase change memory device |
| 04/16/2009 | US20090097304 Nonvolatile memory using resistance material |
| 04/16/2009 | US20090097303 MRAM with Resistive Property Adjustment |
| 04/16/2009 | US20090097302 Semiconductor device |
| 04/16/2009 | US20090097301 Semiconductor storage apparatus and semiconductor integrated circuit incorporating the same |
| 04/16/2009 | US20090097300 Variable resistance element, its manufacturing method and semiconductor memory device comprising the same |
| 04/16/2009 | US20090097299 Semiconductor memory device, method for fabricating the same and semiconductor switching device |
| 04/16/2009 | US20090097298 Integrated Circuit, Memory Cell, Memory Module, Method of Operating an Integrated Circuit, and Method of Manufacturing a Memory Cell |
| 04/16/2009 | US20090097295 Nonvolatile Semiconductor Memory Device |
| 04/16/2009 | US20090096045 Magnetoresistive device and nonvolatile magnetic memory equipped with the same |
| 04/16/2009 | US20090095953 Phase change materials and associated memory devices |
| 04/16/2009 | DE102008000893A1 DRAM-Zelle mit magnetischem Kondensator DRAM cell with magnetic capacitor |
| 04/16/2009 | DE102007049896A1 Extreme digital picture card for photo industry, comprises data carrier housing made of polyamide plastic granulates or polycarbonate plastic granulates or transparent polystyrene plastic granulate housing, and magnetic material storage |
| 04/16/2009 | DE102006001117B9 Apparat für Strom-Erfass-Verstärker-Kalibrierung in MRAM-Einrichtungen Apparatus for current-sense amplifier calibration in MRAM devices |
| 04/16/2009 | DE102005020796B4 Halbleiterspeicherbauelement und Programmierverfahren The semiconductor memory device and programming process |
| 04/16/2009 | DE102005019041B4 Halbleiterspeicher und Verfahren zur Anpassung der Phasenbeziehung zwischen einem Taktsignal und Strobe-Signal bei der Übernahme von zu übertragenden Schreibdaten Semiconductor memory and method of adjusting the phase relationship between a clock signal and strobe signal in the adoption of write data to be transmitted |
| 04/16/2009 | DE102005014815B4 Datenleseverfahren und Halbleiterbauelement A data reading method, and semiconductor device |
| 04/16/2009 | DE102004037450B4 Verfahren zum Betrieb eines Schalt-Bauelements Method for operating a switching device |
| 04/15/2009 | EP2048667A1 Methods of programming non-volatile memory cells |
| 04/15/2009 | EP2047474A2 Floating gate memory with compensating for coupling during programming |
| 04/15/2009 | EP2047473A2 Compensating for coupling between adjacent storage elements in a nonvolatile memory, based on sensing a neighbor using coupling |
| 04/15/2009 | EP1994489A4 Method of reducing electro-static discharge (esd) from conductors on insulators |
| 04/15/2009 | EP1844473B1 Radiation-hardened sram cell with write error protection |
| 04/15/2009 | EP1723676A4 Nano-enabled memory devices and anisotropic charge carrying arrays |
| 04/15/2009 | EP1535284B1 Reference voltage generation for memory circuits |
| 04/15/2009 | CN101410908A Semiconductor storage device |
| 04/15/2009 | CN101410907A Multiple port memory having a plurality of parallel connected trench capacitors in a cell |
| 04/15/2009 | CN101410906A Flash memory system control scheme |
| 04/15/2009 | CN101409328A Organic field-effect transistor |
| 04/15/2009 | CN101409327A Resistive memory structure with buffer layer |
| 04/15/2009 | CN101409326A Magnetoresistive effect element and magnetic random access memory |
| 04/15/2009 | CN101409302A Phase-change memory array and manufacturing method thereof |
| 04/15/2009 | CN101409104A Novel non-volatilization dynamic memory and memory operation method thereof |
| 04/15/2009 | CN101409102A Semiconductor memory apparatus |
| 04/15/2009 | CN100479219C Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same |